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Tactile Sensors

Based on Pressure Transducers Arrays

Integral Pressure Transducers Array

6,2

□ 14

18

The array is aimed to design tactile sensors of medical purpose.

Measurement Range 35 kPa

Channels Number 19

Pretreatment Circuit Analog Multiplexer

Overall Dimensions Ø18х0,42 mm

Supply Voltage max+5 V

Membrane Design Method Silicon Chemical Etching

Output Signal Differential Analog Signal

Technical Features

2-D Array Test Models of Pressure Transducers with Pretreatment Elements

Module Overall Dimensions up to Ø18х17 mm

Output Signal UART Digital Interface

Pressure Transducers Distance

(Equal Triangle Side)

2,7 mm

Pressure Measurement Channels Number 19

Data Treatment Device Amplifier, Multiplexor, AD-Converter, Microcontroller

AD-Converter Capacity 16 bit

Measurement Frequency 1000-1500 /с

Supply Voltage 2,7-3,6 V

Output Signal UART, 115200 c-1

Channels Number 7

Overall Dimensions Ø8,9x40 mm

Treatment Device Multiplexor, AD-Converter, Microcontroller

AD-Converter Capacity 16 bit

Measurement Frequency 100 Hz

Technical Features

2-D Array Test Model of Sensors with Signal Pretreatment Elements

Gate Arrays 5528 series with reduced supply voltage

SMC “TECHNOLOGICAL CENTRE” developed a family of 4 radiation-resistant Gate Arrays (GA) series, allowing to

realize semicustom microcircuits with volume of 580 – 1.000.000 nominal gates with supply power of 2,7 – 5,5 W.

Mentioned GA Series have a single “Kovcheg” ASIC, a single library of functional cells under support of microcircuits

prototyping.

5503 & 5507 GA Series are full functional analogues, produced with a single CMOS-technology, consisting of 4 GA types

each. 5503 GA Series: supply power – 5W, average delay time per gate – max 2,2 ns. 5507 BMC Series: supply power –

3W, average delay time per gate – max 3,5 ns.

5508 & 5509 GA Series have “sea of gates” organisation, 2 metallization layers, high frequencies. 5509 GA Series are

carried out on “silicon-on-insulator” structure and have higher resistance to single nuclear particles. Mentioned series are

under production.

Three types of Gate Arrays with 20.000, 100.000 and 1.000.000 gates;

The CMOS 0.18 microns technology with enclosed transistors on bulk silicon;

Supply voltage of chips is in the range from 0,8 V to 3,0 V;

Original tools of topological design and prototyping;

Reliability at least 50 000 hours.

Integrated System of Automated Design LIS “KOVCHEG"

The teaching version of CAD LSI “Kovcheg 2.1" is intended for CMOS VLSI

development based on younger types of basic matrix crystals (К5503ХМ1,

К5503ХМ2) of BMC К5503 series.

The teaching version of CAD VLSI “Kovcheg 2.1" includes all main subsystems

required for development and preparation for production of semicustom VLSI. They

are:

• System of functional-logic simulation ASCT;

• Subsystem of cells arrangement on BMC field;

• Subsystem of topology synthesis;

• Specialized topological editor;

• Verification subsystem;

• Subsystem of topology parameters calculation.

SMC «Technological Centre» Production

and New Developments

Application: conversion of gage, absolute and differential pressures into electrical signal.

Description: Transducer is a crystal sized 6,2 х 6,2 mm and 430 mcm thickness with 3,5 x 3,5mm membrane and membrane distributed concentrator. All tensoresistors have identicalgeometry and are parallel to each other. The resistors are united in Witstone bridge circuit withaluminium paths with a torn diagonal (to adjust initial bridge disbalance). Tensobridge isswitched successively with transistor circuit for sensitivity temperature compensation.

Purpose: to measure pressures: from 1 kPa to 25 kPa.

Integral Pressure Transducer IPD 5.2

1 5

610

6,2

+0

,1

Electrical Circuit &

Outputs Purpose SPE 5.2

2

1

9

8

3

10

6

45

SPE5.2

Jumper

Jumper

Supply Voltage, V 4,85 - 5,15

Output Voltage at Pn = 0, mV ±6

Temperatures, °С –50 ... +85

Voltage at Tensobridge Input at Vnom = 5,0 V 2,4 - 2,8

Tensobridge Resistance Qm, kOm 3,0 - 5,0

Tensobridge Leak Current at V=30 V, mcA < 0,2

Contact Areas

Integral Pressure Transducer IPD 6

Application: conversion of gage, absolute and differential pressures into electrical signal.

Description: Transducer is a crystal sized 4 х 4 mm and 0,43 mm thickness with 2 x 2 mm membrane and membrane distributed concentrator. All tensoresistors have identical geometry and are parallel to each other. The resistors are united in Witstonebridge circuit with aluminium paths with a torn diagonal (to adjust initial bridge disbalance). Tensobridge is switched successively with transistor circuit for sensitivity temperature compensation.

Purpose: to measure pressures: from 40 kPa to 2500 kPa.Electrical Circuit &

Outputs Purpose SPE 6

2

1

9

8

3

10

6

45

SPE 6

Jumper

Jumper

Supply Voltage, V 4,85 - 5,15

Output Voltage at Pn = 0, mV ±6

Temperatures, °С –50 ... +85

Voltage at Tensobridge Input at Vnom = 5,0 V 2,4 - 2,8

Tensobridge Resistance Qm, kOm 3,0 - 5,0

Tensobridge Leak Current at V=30 V, mcA < 0,21 5

610

4,0

+0,2

Endosurgery Tactile

Mechanoreceptors

Tactile Mechanoreceptors for MSU IISI Endosurgery

Tensometric Beam Transducer TKB-5

Application: conversion of moving and acceleration into electrical signal in force sensors

and accelerometers.

Description: The transducer is a rectangular silicon beam with mechanical stress

concentrator in the form of transverse depressions of defined dimensions with strain

impedance bridge on the surface.

Advantages: Temperature sensitivity compensation scheme.

Electrical circuit

Ubridge

Uout

Udd

Q1

R2

R1

1 4

5

3

2

76

Nominal load , N 0,2

Maximum load, N 0,6

Supply voltage, V 9

Nominal output signal, mV 140 200

Initial bridge unbalance, mV <20

Output signal non-linearity, % <0,2

Operating temperatures, ºС -40 +80

Temperature effect on sensivity,%/10ºС <0,2

Temperature “zero” inaccuracy, %/10 ºС <0,5

Dimensions, mm 8 2 0,5

Application: conversion of moving and acceleration into electrical signal in force sensors and

accelerometers.

Description: The transducer is a rectangular silicon beam with two mechanical stress

concentrators in the form of transverse depressions of defined dimensions with tensoresistive

bridge circuit on the surface.

Advantages: Temperature sensitivity compensation scheme.

Nominal load , N 0,15

Maximum load, N 0,45

Supply voltage, V 5

Nominal output signal, mV 20 60

Initial bridge unbalance, mV <20

Output signal non-linearity, % <0,2

Operating temperatures, ºС -50 +80

Temperature effect on sensivity,%/10ºС <0,2

Temperature “zero” inaccuracy, %/ 10ºС <0,5

Dimensions, mm 10 2 0,5

Tensometric Beam Transducer TKB- 6

Tensometric Modules of Differential Pressure TDM-D

Tensometric module TDM-D is designed to measure differential pressureof non-aggressive gases. In tensometric module the sensitive element ofpressure (SPE), representing assembly from a crystal of the Integratedpressure transducer IPD and silicon details of constructive purpose isapplied. The type of a crystal depends on rating value of pressure. SPE it ishermetically attached to the metal basis in which are soldered in glass-to-metal conclusions. To volume with measured pressure tensometric moduleconnects through the branch socket in a cover of the case in diameter of4,8 mm. The abutment pressure is supplied from the side of the thin tube of2-mm-diameter.

Tensometric Modules of Differential Pressure TDM-A

Tensometric module TDM-A is designed to measure absolute pressure of

non-aggressive gases. In tensometric module the sensitive element of pressure

(SPE), representing assembly

from a crystal of the Integrated pressure transducer IPD and silicon details of

constructive purpose is applied. The type of a crystal depends on rating value

of pressure. During assembly SPE between IPD crystal and a silicon layer the

vacuum cavity is formed. SPE it is pasted to the metal basis in which are

soldered in glass-to-metal conclusions. To volume with measured pressure

tensometric module connects through the branch socket in a cover of the case

in diameter of 4,8 mm.

Tensometric module TDM-IV1, TDM-IV2 are designed to measure the excessive pressure and

rarefaction of non-aggressive gases. Constructively tensometric module excessive pressure are issued in

two variants: TDM-IV1 with the branch socket in a cover of tensometric module for connection to the

measured environment; TDM-IV2 with the branch socket in the basis of the case. In tensometric modules

the sensitive element of pressure (SPE), representing assembly from a crystal of the Integrated pressure

transducer IPD and silicon details of constructive purpose is applied. The type of a crystal depends on

rating value of pressure. SPE is hermetically attached to the metal basis in which are soldered in glass-to-

metal conclusions.

Tensometric Modules of Excessive Pressure and Rarefaction

TDM-IV1 TDM-IV2

ASIC 5507 – Development of ASIC 5503

Gate Arrays Design

Channel structure

4-transistor cell

2 layout layers

vertical – Al

horyzontal – polySi

metal pitch 4,8 mcm

channel length 1,8 mcm

1 sewn layer

technology provides high resistance to special factors

Radiaion-resistant ASIC 5508 and 5509

Two-metal ASIC 5508 has structure “sea of rectifying cells" and operating frequency up to 100 Hz. ASIC 5509 on structures «silicon-on-insulator» has higher resistance to single nuclear particles effect.

Forecasted LSI resistance features to special factors

External factorASIC Series

5503 5508 5509

И1 2У 2У 3У

И2 5*2У 2У 3У

УБР И2 features 0,02*1У 0,02*1У 0,5*1У

И3 2У 2У 2У

С1 2У 2У 2У

С2 2У 2У 2У

С3 1У 2У 2У

К1 2*1У 2У 2У

К3 0,5*1У 2У 2У

Production Made to Special Orders

Pressure Sensor

Pressure Sensor Purpose:

Sensor is applied to measure pressure in lines of dry unaggressive gases

and to pass dimensions in a digital form. Sensor measures relative

pressure, i.e. depression or discharge in relation to external atmosphere.

Sensor has primary treatment means (A-to-D converter, micro-

controller) to digitize analog signals and its temperature correction.

Pressures, kPa -10...0...+100

Resolution (low order value), kPa 0,1

Main Inaccuracy, kPa ±0,5

Temperatures, °С 0...+40

Supply Voltage, V 3,3

Current, mA 20

Interface RS-485

Dimensions, mm 50 х 15 х 25

Wireless Pressure Sensor

Pressures, kPa 0...+250

Resolution (low order value), kPa 0,25

Main Inaccuracy, kPa ±2

Temperatures, °С 0...+40

Supply Voltage, V Lithium Battery 3,3

Battery Service Life, hour 1

Measurement Rate, measurement/sec 100

Interface Radiochannel 433 Mhz

Dimensions, mm 50 х 12,5 х 10

Wireless Pressure Sensor Purpose:

Sensor is applied to measure pressure of dry

unaggressive gases and to pass dimensions in a digital form distantly.

Sensor measures relative pressure, i.e. depression or discharge in

relation vacuum. Sensor has primary treatment means (A-to-D

converter, microcontroller) to digitize analog signals.

Integral Magnetosensitive Microsystems of Matrix Type to Measure

Parameters of Distributed Magnetic Field

Technical Features:

- dimensional resolution 40...200 mcm

- relative magnetosensitivity 4 – 10 %/Т

- operating temperatures -60...+125 С

- magnetosensitive cells 32...1000

- typical crystal sizes, mm 8х10; 2х28; 4х30

- outputs 16...64

- consumption current 300...900 мА

Directon of magnetosensitivity axis – parallel or perpendicular

to the crystal surface

Magnetoresistive Sensors

Three-coordinated

magnetoresistive sensors

Application:

- detectors of availability, orientation,

movement of ferromagnetic objects;

- magnetovisors;

- defectoscopes of ferromagnetic

object.

Magnetoresistive transducer of magnetic field (AMRD OC

series) with odd output signal characteristics

Application:

- Compact electronic devices for means of safety and navigation;

- Portable remote presence control systems of any object and its

traffic;

- Onboard devices of transport vehicles and flying devices;

- Matrix transducers of magnetovisors and defectoscopes.

Distinguishing Features:

- patent RU2279737;

- availability integral bias coil (Set-Reset) providing decreasing of

hysteresis transmission

characteristics;

- availability planar coil (Offset) intended for eliminating initial

unbalance.

Magnetoresistive transducer of magnetic field (AMRD EC series)

with even output signal characteristics

Application:

- Transducers of position and contactless switches;

- Registration of moving of ferromagnetic object;

- Contactless sensors of promptness for electric engines and

automobile electronic ignition system;

- Portable remote presence control systems of ferromagnetic

objects.

Distinguishing Features:

- AMRD-EC structure contains integral bias coil (Offset)

intended for eliminating initial unbalance;

- Expanded range of magnetic field measurement.

External view and

purpose of outputs

Front Reverse

4 - power supply (+)

1 - output 1

5 - output 22 - general earth ( )

3, 6 - power supply of conductor Offset

7, 8 - are not used

Electronic Sensor for Magnetic Field Intensity Transformation with Odd Characteristic

of Output Signal BKDNPM-1O

(part types BKDNPM-1O-02 and BKDNPM-1O-06)BKDNPM-1O Application:

- scanners of the distributed magnetic field,

- defectoscopes of ferromagnetic objects,

- controlling and measurement systems,

- electronic compass,

- integrated microsystems to analyze constant and variable of magnetic fields with

magnetic field intensity: - 2 E…+ 2 E (BKDNPM-1O-02) and – 6 E… + 6 E (BKDNPM-

1O-06).

Parameter BKDNPM-1O-02 BKDNPM-1O-06

Sensitivity, mV/E min 1000 min 1000

Magnetic Field Intensity, E ±2 ±6

Variable Magnetic Field Frequency, kHz no more 500 no more 500

Top Resolution by Magnetic Field, mcE 50 50

Magnetic Field Intensity Measurement Inaccuracy, % 1,5 1,5

Nominal Supply Voltage, V 6 ± 0,5 6 ± 0,5

Operating Temperatures,°С +10 ... + 55 +10 ... + 55

Dimensions, mm 92,5 х 20,0 х 7,5 92,5 х 20,0 х 7,5

Parameter BKDNPM-1E-10

Sensitivity, mV/E min 100

Magnetic Field Intensity, E 10

Variable Magnetic Field Frequency, kHz no more 500

Nominal Supply Voltage, V 6 ± 0,5

Operating Temperatures,°С +10 ... + 55

Dimensions, mm 92,5 х 20,0 х 7,5

BKDNPM-1E-10 Application:

- program control system for turn frequency of machine tools and

mechanisms’ moving parts,

- hitless switches and position detector of ferromagnetic objects,

- integrated microsystems to fix stated levels of magnetic field or

current.

Electronic Sensor for Magnetic Field Intensity Transformation

with Even Characteristic of Output Signal BKDNPM-1E-10

Universal Module for MEMS Signals Processing

Output Analog Channels 8

Output Digital Channels 8

Power, W 0,5

Data Discretization Frequency, kHz up to 200

Supply Voltage, V +6

Dimensions, mm 79 х 53 х 15

Purpose:

Signals reception from MEMS sensors, followed by digital

filtration and data processing.

Calculation of measured dimensions’ values, and their processing

according to given algorithms.

Initial data integration in order to increase parameters accuracy.

Module is applied in various automatics and monitoring systems

(machine building, medicine, transport etc.).

Module includes three-coordinate gyroscope, three-coordinate

accelerometer, three-coordinate magnetic field sensor.

Extra Options:

- data archiving up to 16 MB,

- data transfer according to standard interface

(Rs232, R3485, IRDA, USB etc.)

Piezoresistive Inertial Microsystem for Small Accelerations

Measurement

The microsystem is used to measure accelerations in the range of 2-10 g with frequency of zero – several

hundreds tens Herz. Silicon inertial mass weighed 2 mg is attached by microconsoles to the base in the form of

rectangular frame, with four thin silicon beams.

Microsystem crystal size - 8,0 х 2,5 х 0,44 mm

Silicon inertial mass weight - 2 mg

Typical beam size - 600х20х10 mcm

Accelerations measurement range - 2-10 g

Microsystem sensitivity with power of 9V - 1,9 mV/g

Operating frequencies range - от 0 до 400 Hz

Resonant frequency - 1200 Hz