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Country (Cleaned 2) Author Affiliation

(Name) (Cleaned 2) Subject Category Title

Publication

Year Keywords Plus Source

Top 11 Top Terms Top Terms Top Terms Top Terms Top Terms Top Terms

Peoples R China[64]

Chinese Acad Sci [22]; Nankai Univ [16]; Shanghai Jiao Tong Univ [12]; Tsing Hua Univ [4]; Zhejiang Univ [4]

Materials Science, Multidisciplinary [22]; Physics, Multidisciplinary [21]; Physics, Applied [15]; Physics, Condensed Matter [12]; Engineering, Electrical & Electronic [5]

A combinatorial analysis of deposition parameters on deposition process and performance of silicon thin films by VHF-PECVD [1]; A novel two-step laser crystallization technique for low-temperature poly-Si TFTs [1]; Effect of substrate temperature on the optical properties of a-Si : H films by RF-PECVD [1]; mc-Si : H/c-Si solar cell prepared by PECVD [1]; Effects of high hydrogen dilution on the optical and electrical properties in B-doped nc-Si : H thin films [1]

2006 [23]; 2005 [9]; 2001 [7]; 2003 [7]; 2004 [6]

AMORPHOUS-SILICON [20]; CHEMICAL-VAPOR-DEPOSITION [14]; PLASMA [11]; MICROCRYSTALLINE SILICON [9]; SOLAR-CELLS [7]

ACTA PHYSICA SINICA [13]; CHINESE PHYSICS [7]; JOURNAL OF NON-CRYSTALLINE SOLIDS [5]; INTERNATIONAL JOURNAL OF MODERN PHYSICS B [3]; SOLAR ENERGY MATERIALS AND SOLAR CELLS [3]

USA[63]

Natl Renewable Energy Lab [8]; Penn State Univ [8]; Univ Arkansas [6]; Colorado Sch Mines [4]; Texas A&M Univ [3]

Materials Science, Multidisciplinary [41]; Physics, Applied [26]; Engineering, Electrical & Electronic [13]; Physics, Condensed Matter [11]; Materials Science, Ceramics [11]

Deposition of thin film silicon using the pulsed PECVD and HWCVD techniques [2]; Low-temperature silicon nitride for thin-film electronics on polyimide foil substrates [1]; Effects of a-Si : H resist vacuum-lithography processing on HgCdTe [1]; Maximization of the open circuit voltage for hydrogenated amorphous silicon n-i-p solar cells by incorporation of protocrystalline silicon p-type layers [1]; Amorphous-silicon thin-film transistors made at 280 degrees C on clear-plastic substrates by interfacial stress engineering [1]

2006 [13]; 2003 [12]; 2007 [10]; 2004 [9]; 2002 [8]

HYDROGENATED AMORPHOUS-SILICON [14]; AMORPHOUS-SILICON [12]; FILMS [10]; MICROCRYSTALLINE SILICON [10]; DEPOSITION [9]

JOURNAL OF NON-CRYSTALLINE SOLIDS [11]; SOLAR ENERGY MATERIALS AND SOLAR CELLS [7]; THIN SOLID FILMS [5]; APPLIED PHYSICS LETTERS [4]; JOURNAL OF ELECTRONIC MATERIALS [4]

4



Publication



Japan[54]

Osaka Univ [7]; Natl Inst Adv Ind Sci & Technol [6]; Tohoku Univ [4]; Mitsubishi Heavy Ind Co Ltd [4]; Natl Inst AIST [3]

Physics, Applied [28]; Materials Science, Multidisciplinary [19]; Physics, Condensed Matter [13]; Chemistry, Physical [11]; Materials Science, Coatings & Films [10]

A dye-sensitized solar cell using a red ruthenium(II) complex with 9,9-bis(4-methoxyphenyl)-4,5-diazafluorene [1]; Mass-production of large size a-Si modules and future plan [1]; Effects of carrier concentration on the dielectric function of ZnO : Ga and In2O3 : Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption [1]; Mechanisms of the growth of nanocrystalline Si : H films deposited by PECVD [1]; Combinatorial fabrication process for a-Si : H thin film transistors [1]

2003 [11]; 2007 [10]; 2004 [10]; 2006 [7]; 2002 [7]

AMORPHOUS-SILICON [10]; CHEMICAL-VAPOR-DEPOSITION [10]; HYDROGENATED AMORPHOUS-SILICON [8]; THIN-FILMS [8]; FILMS [7]

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS [9]; THIN SOLID FILMS [7]; JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY [5]; JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS [4]; JOURNAL OF NON-CRYSTALLINE SOLIDS [4]

Portugal[40]

Univ Nova Lisboa [28]; New Univ Lisbon [8]; CEMOP [5]; UTL [5]; Chinese Acad Sci [4]

Materials Science, Multidisciplinary [31]; Physics, Applied [16]; Physics, Condensed Matter [12]; Materials Science, Coatings & Films [12]; Materials Science, Ceramics [11]

Characterization of silicon carbide thin films prepared by VHF-PECVD technology [1]; Mass spectroscopy analysis during the deposition of a-SiC : H and a-C : H films produced by hot wire and hot wire plasma-assisted techniques [1]; Metal-ferroelectric thin film devices [1]; Combining HW-CVD and PECVD techniques to produce a-Si : H films [1]; MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge [1]

2002 [13]; 2004 [9]; 2001 [6]; 2006 [4]; 2005 [4]

AMORPHOUS-SILICON [9]; DEPOSITION [5]; THIN-FILMS [5]; HYDROGENATED AMORPHOUS-SILICON [4]; FILMS [3]

THIN SOLID FILMS [8]; JOURNAL OF NON-CRYSTALLINE SOLIDS [8]; VACUUM [5]; ADVANCED MATERIALS FORUM II [5]; ADVANCED MATERIALS FORUM I [3]

5



Publication



Italy[32]

CNR [12]; Politecn Turin [9]; ENEA [8]; Univ Naples Federico II [7]; Ecole Polytech Fed Lausanne [2]

Physics, Applied [18]; Materials Science, Multidisciplinary [17]; Physics, Condensed Matter [15]; Materials Science, Coatings & Films [12]; Engineering, Electrical & Electronic [7]

Luminescence properties of amorphous silicon-nitride-based optical microcavities [1]; Microcrystalline silicon-carbon films deposited by silane-methane mixture highly diluted in hydrogen [1]; Electroluminescence and transport properties in amorphous silicon nanostructures [1]; Microstructural evolution of thermally treated low-dielectric constant SiOC : H films prepared by PECVD [1]; Microstructure analysis of a-SiC : H thin films grown by high-growth-rate PECVD [1]

2006 [11]; 2007 [6]; 2004 [4]; 2002 [3]; 2001 [3]

CHEMICAL-VAPOR-DEPOSITION [12]; AMORPHOUS-SILICON [9]; THIN-FILMS [7]; PLASMA [6]; PHOTOLUMINESCENCE [5]

THIN SOLID FILMS [8]; JOURNAL OF NON-CRYSTALLINE SOLIDS [6]; APPLIED SURFACE SCIENCE [3]; SOLID-STATE ELECTRONICS [2]; JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY [2]

Germany[28]

KFA Julich GmbH [8]; Izmir Inst Technol [5]; Hahn Meitner Inst Berlin GmbH [5]; Tech Univ Darmstadt [2]; Max Planck Inst Mikrostrukturphys [2]

Materials Science, Multidisciplinary [19]; Physics, Applied [11]; Physics, Condensed Matter [8]; Materials Science, Ceramics [7]; Materials Science, Coatings & Films [6]

Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD [1]; Microcrystalline silicon films and solar cells deposited by PECVD and HWCVD [1]; Minority carrier properties of microcrystalline silicon thin films grown by HW-CVD and VHF-PECVD techniques [1]; Electronic states in a-Si : H/c-Si heterostructures [1]; Monitoring the reactivity of oxide interfaces in dye solar cells with photocurrent imaging techniques [1]

2001 [6]; 2004 [6]; 2006 [5]; 2003 [4]; 2002 [3]

AMORPHOUS-SILICON [13]; HYDROGEN [4]; CHEMICAL-VAPOR-DEPOSITION [4]; PHOTOVOLTAICS [3]; GLOW-DISCHARGE [3]

JOURNAL OF NON-CRYSTALLINE SOLIDS [6]; THIN SOLID FILMS [4]; JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS [4]; SURFACE & COATINGS TECHNOLOGY [2]; JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS [2]

6



Publication



France[26]

Ecole Polytech [8]; Univ Paris 11 [5]; CNR [4]; Univ Lyon 1 [4]; Univ Paris 06 [4]

Physics, Applied [10]; Materials Science, Multidisciplinary [10]; Physics, Condensed Matter [9]; Materials Science, Coatings & Films [7]; Materials Science, Ceramics [4]

Mechanical stress in PECVD a-SiCH: aging and plasma treatments effects [1]; Electronic properties of Erbium doped amorphous silicon [1]; Comparison of the structural and optical properties of zinc oxide thin films deposited by d.c. and r.f sputtering and spray pyrolysis [1]; Composition, structure and optical characteristics of polymorphous silicon films deposited by PECVD at 27.12 MHz [1]; Nuclear radiation detectors using thick amorphous-silicon MIS devices [1]

2006 [6]; 2004 [5]; 2007 [4]; 2001 [3]; 2005 [3]

AMORPHOUS-SILICON [9]; THIN-FILMS [5]; DISCHARGE [4]; LUMINESCENCE [4]; FILMS [3]

JOURNAL OF NON-CRYSTALLINE SOLIDS [4]; SURFACE & COATINGS TECHNOLOGY [3]; APPLIED SURFACE SCIENCE [2]; MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY [2]; ADVANCED MATERIALS FORUM II [2]

India[25]

Indian Assoc Cultivat Sci [15]; Indian Inst Technol [5]; Ecole Polytech [2]; Univ Delhi [2]; Univ Lyon 1 [2]

Physics, Applied [16]; Materials Science, Multidisciplinary [9]; Physics, Condensed Matter [5]; Materials Science, Coatings & Films [5]; Physics, Multidisciplinary [3]

Comparison of structural and optoelectronic properties of n-type microcrystalline silicon and silicon oxide films with lowering of thickness [1]; Morphology and electronic transport of polycrystalline silicon films deposited by SiF4/H-2 at a substrate temperature of 200 degrees C [1]; Onset of microcrystallinity in silicon thin films [1]; Optoelectronic and structural properties of undoped microcrystalline silicon thin films: Dependence on substrate temperature in very high frequency plasma enhanced chemical vapor deposition technique [1]; Photoluminescent, wide-bandgap a-SiC : H alloy films deposited by Cat-CVD using acetylene [1]

2002 [10]; 2003 [4]; 2004 [4]; 2001 [2]; 2007 [2]

HYDROGENATED AMORPHOUS-SILICON [7]; AMORPHOUS-SILICON [7]; GLOW-DISCHARGE [6]; THIN-FILMS [6]; A-SI-H [4]

JOURNAL OF PHYSICS D-APPLIED PHYSICS [4]; THIN SOLID FILMS [4]; JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS [3]; JOURNAL OF NON-CRYSTALLINE SOLIDS [3]; INDIAN JOURNAL OF PHYSICS AND PROCEEDINGS OF THE INDIAN ASSOCIATION FOR THE CULTIVATION OF SCIENCE- PART A [1]

7



Publication



South Korea[25]

Sungkyunkwan Univ [8]; Korea Adv Inst Sci & Technol [6]; Chungbuk Natl Univ [3]; Hanyang Univ [2]; Samsung SDI [2]

Materials Science, Multidisciplinary [9]; Physics, Applied [7]; Physics, Multidisciplinary [6]; Physics, Condensed Matter [5]; Materials Science, Coatings & Films [5]

Effect of the anchoring group (carboxylate vs phosphonate) in Ru-complex-sensitized TiO2 on hydrogen production under visible light [1]; Comparative study on the radiation damage of a-Si : H p-i-n diodes made by PECVD and ion shower doping [1]; Enhancement of the photocurrent generation in dye-sensitized solar cell based on electrospun TiO2 electrode by surface treatment [1]; Annealing effect on the optical properties of a-SiC : H films deposited by PECVD [1]; Construction and characterization of an amorphous silicon flat-panel detector based on ion-shower doping process [1]

2002 [9]; 2005 [4]; 2003 [3]; 2007 [3]; 2004 [3]

FILMS [3]; PLASMA [3]; CHEMICAL-VAPOR-DEPOSITION [3]; RESONANCE [2]; AMORPHOUS-SILICON [2]

JOURNAL OF THE KOREAN PHYSICAL SOCIETY [4]; THIN SOLID FILMS [3]; JOURNAL OF NON-CRYSTALLINE SOLIDS [2]; SURFACE & COATINGS TECHNOLOGY [1]; JOURNAL OF PHYSICAL CHEMISTRY B [1]

Netherlands[23]

Univ Utrecht [12]; Eindhoven Univ Technol [5]; Delft Univ Technol [3]; ECN Solar Energy [2]; Univ Twente [2]

Physics, Applied [15]; Materials Science, Multidisciplinary [10]; Materials Science, Coatings & Films [6]; Physics, Condensed Matter [5]; Materials Science, Ceramics [3]

Chemical modeling of a high-density inductively-coupled plasma reactor containing silane [1]; Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD [1]; Microcrystalline silicon growth in the presence of dopants: effect of high growth temperatures [1]; Micromorph" tandem solar cells at high deposition rates [1]; Absolute in situ measurement of surface dangling bonds during a-Si : H growth [1]

2007 [7]; 2002 [5]; 2001 [4]; 2004 [4]; 2006 [1]

FILMS [6]; AMORPHOUS-SILICON [6]; CHEMICAL-VAPOR-DEPOSITION [6]; SOLAR-CELLS [4]; MICROCRYSTALLINE SILICON [4]

THIN SOLID FILMS [4]; JOURNAL OF APPLIED PHYSICS [3]; JOURNAL OF NON-CRYSTALLINE SOLIDS [3]; SURFACE & COATINGS TECHNOLOGY [2]; APPLIED PHYSICS LETTERS [2]

8



Publication



Switzerland[23]

Ecole Polytech Fed Lausanne [9]; Univ Neuchatel [7]; Swiss Fed Inst Technol [5]; CERN [3]; Unaxis SPTec SA [3]

Physics, Applied [10]; Materials Science, Multidisciplinary [8]; Chemistry, Physical [6]; Physics, Condensed Matter [6]; Materials Science, Coatings & Films [5]

A new concept of monolithic silicon pixel detectors: hydrogenated amorphous silicon on ASIC [1]; Amorphous solar cells, the micromorph concept and the role of VHF-GD deposition technique [1]; Microcrystalline silicon and 'micromorph' tandem solar cells [1]; Molecular-scale interface engineering of TiO2 nanocrystals: Improving the efficiency and stability of dye-sensitized solar cells [1]; Ne advent of mesoscopic injection solar cells [1]

2004 [10]; 2006 [4]; 2003 [3]; 2005 [3]; 2007 [2]

CONVERSION [3]; EFFICIENCY [3]; NANOCRYSTALLINE TIO2 [3]; FILMS [2]; PERFORMANCE [2]

THIN SOLID FILMS [4]; ADVANCED MATERIALS [2]; JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY [2]; NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT [2]; PROGRESS IN PHOTOVOLTAICS [2]

9

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Year 2006 106 �� * Year 2002 77 �� * Year 2004 75 �� * Year 2003 63 �� * Year 2007 57 �� *

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Material Science , Multidisciplinary 240 �� * Physics , Applied 208 �� * Physics , Condensed matter 134 �� * Materials Science , Coatings & Films 97 �� * Materials Science , Ceramics 61 �� *

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Fotunato , E 34 publications ( New Univ. Lisbon ; Portugal ) Martins, R 34 � (Univ. Nova Lisboa ; Portugal ) Ferreira; I 23 � (Univ. Nova Lisboa ; Portugal ) Aguas , H 22 � (Univ. Nova Lisboa ; Portugal ) Pereira , L 13 � (Univ. Nova Lisboa ; Portugal )

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(� ��>��E)� �� Solar Cell E�กc��^[ >]" ISI: WOS �0�<*[�)(ก�� [�� ]��V* 180 �)\� ( Most Cited article : Times Cited 180 ) PT J AU Gratzel, M

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dye-sensitized solar cells

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LA English DT Article DE dye-sensitized solar cell; nanocrystalline; sensitizer ID TEMPERATURE MOLTEN-SALTS; POLYMER GEL ELECTROLYTE; TIO2 ELECTRODES; EFFICIENCY; FILMS; TRANSPORT; NANOPARTICLES; ENHANCEMENT; PERFORMANCE; MECHANISMS AB The dye-sensitized solar cell (DSC) provides a technically and economically credible alternative concept to present day p-n junction photovoltaic devices. In contrast to the conventional silicon systems, where the semiconductor assumes both the task of light absorption and charge carrier transport the two functions are separated here. Light is absorbed by a sensitizer, which is anchored to the surface of a wide band gap oxide semiconductor. Charge separation takes place at the interface via photo-induced electron injection from the dye into the conduction band of the solid. Carriers are transported in the conduction band of the semiconductor to the charge collector. The use of sensitizers having a broad absorption band in conjunction with oxide films of nanocrystalline morphology permits to harvest a large fraction of sunlight. Nearly quantitative conversion of incident photon into electric cur-rent is achieved over a large spectral range extending from the UV to the near IR region. Overall solar (standard AM 1.5) to current conversion efficiencies of 10.6% have been reached. New electrolytes based on ionic liquids have been developed that show excellent stability both under prolonged light soaking and high temperature stress. There are good prospects to produce these cells at lower cost than conventional devices. Here we present the current state of the field, and discuss the importance of mastering the interface of the mesoporous films by assisting the self-assembly of the sensitizer

12

at the surface of the oxide nanocrystals. (C) 2004 Elsevier B.V. All rights reserved. C1 Swiss Fed Inst Technol, Lab Photon & Interfaces, CH-1015 Lausanne, Switzerland. RP Gratzel, M, Swiss Fed Inst Technol, Lab Photon & Interfaces, CH-1015

Lausanne, Switzerland.

EM [email protected] NR 47 TC 180

PU ELSEVIER SCIENCE SA PI LAUSANNE PA PO BOX 564, 1001 LAUSANNE, SWITZERLAND SN 1010-6030 J9 J PHOTOCHEM PHOTOBIOL A-CHEM JI J. Photochem. Photobiol. A-Chem. PD JUN 1 PY 2004

VL 164 IS 1-3 SI Sp. Iss. SI BP 3 EP 14 PG 12 SC Chemistry, Physical GA 826QG UT ISI:000221843000002

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Univ UtrechtUniv Utrecht

Univ Sao PauloUniv Sao Paulo

Univ Nova LisboaUniv Nova Lisboa

Shanghai Jiao Tong UnivShanghai Jiao Tong Univ

Politecn TurinPolitecn Turin

Natl Univ SingaporeNatl Univ SingaporeNatl Renewable Energy LabNatl Renewable Energy Lab

Nankai UnivNankai Univ

KFA Julich GmbHKFA Julich GmbH

Indian Assoc Cultivat SciIndian Assoc Cultivat Sci

ENEAENEA

Ecole Polytech Fed LausanneEcole Polytech Fed Lausanne

Ecole PolytechEcole Polytech

CNRCNR

Chinese Acad SciChinese Acad Sci


12 Univ Utr 2 Eindhove 1 TNO 1 Philips 1 Acad Sci


9 Univ Sao 1 Univ Fed 1 LURE 1 DFAP 1 Univ Fer


28 Univ Nov 5 CEMOP 3 New Univ 2 Chinese 2 Univ Ave


12 Shanghai 7 Nankai U 1 Wenzhou 1 Xian Jia 1 Chinese


9 Politecn 3 Univ Nap 3 CNR 2 ENEA 1 Univ Pav


8 Natl Uni 2 Inst Bio 2 Nanyang 1 Inst Mat 1 NUS Nano


8 Natl Ren 1 Univ N C 1 Unaxis S 1 SFA Inc 1 Univ Neu


16 Nankai U 7 Shanghai 2 Tianjin 2 Donghua 1 Tianjin


8 KFA Juli 5 Izmir In 1 Max Plan 1 Technion 1 Penn Sta


15 Indian A 2 Univ Par 2 Univ Lyo 2 Univ Par 1 Electrot


8 ENEA 6 Univ Nap 2 Univ Rom 2 Politecn 2 Univ Rom


9 Ecole Po 2 Univ Neu 2 Univ Per 1 Mitsubis 1 Unaxis D


9 Ecole Po 2 Univ Par 2 Indian I 2 Univ Nov 2 CEMOP


16 CNR 3 Politecn 2 Ist Nazl 2 Osaka Un 2 ENEA


22 Chinese 2 New Univ 2 Univ Nov 1 Shanghai 1 Nucl & T

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# 2 ' 2 A 5 H ' 2 ! # 9 I Solar cell · (organic solar cell) OR (silicon solar cell) OR ( polymer solar cell) OR (dye sensitized solar cell) OR (amorphous silicon) OR (microcrystalline