50
44 3. STUDIES ON POTASSIUM LEAD BROMIDE SINGLE CRYSTALS 3.1 INTRODUCTION Ternary alkali lead halide single crystals have become important because of their potential applications in acousto-optic and opto-electronic devices .Lead bromide crystals hold much promise in applications for acouto-optic devices in signal processing and optical spectrum analyzing systems. Single crystals of this material have favourable acousto-optical properties, the most significant of which are its a) spectral transmission range, (b) photo-elastic co-efficient, (c) acousto-optic figure of merit, (d)acoustic velocity and (e) acoustic attenuation , although its use has been hampered by difficulties in growing crystals of high optical quality. Recently, it has been found that ternary alkali halide single crystals can be grown by the melt method and they become important due to their potential applications. Monoclinic KPb 2 Br 5 (KPB) is among the most promising bromide host materials because this material possesses an incorporation of Nd 3+ , Tb 3+ , Dy 3+ and Er 3+ doping ions and provides better homogeneity and quality of doped single crystals [57]. The crystal structure of KPB, (having spacegroup P2 1 /c, lattice parameters a=8.854(2) Å, b=7.927(2) Å , c=12.485(3) Å , β=90.05(3)Å and Z=4), is shown in Figure 3.1 [124]. Complex polyhedral coordination by bromine atoms was found for both potassium and lead atoms. An important step towards practicality was made when the rare-earth-doped alkali-lead halide crystals MPb 2 Hal 5 (M = Rb,K and Hal = Cl, Br) were identified as promising new low-phonon-energy host materials for mid-IR applications.

3. STUDIES ON POTASSIUM LEAD BROMIDE SINGLE CRYSTALSshodhganga.inflibnet.ac.in/bitstream/10603/17934/9/09... · 2018. 7. 9. · Potassium Bromide (KBr) along with double distilled

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  • 44

    3. STUDIES ON POTASSIUM LEAD BROMIDE

    SINGLE CRYSTALS

    3.1 INTRODUCTION

    Ternary alkali lead halide single crystals have become important because of

    their potential applications in acousto-optic and opto-electronic devices .Lead bromide

    crystals hold much promise in applications for acouto-optic devices in signal

    processing and optical spectrum analyzing systems. Single crystals of this material

    have favourable acousto-optical properties, the most significant of which are its a)

    spectral transmission range, (b) photo-elastic co-efficient, (c) acousto-optic figure of

    merit, (d)acoustic velocity and (e) acoustic attenuation , although its use has been

    hampered by difficulties in growing crystals of high optical quality. Recently, it has

    been found that ternary alkali halide single crystals can be grown by the melt method

    and they become important due to their potential applications. Monoclinic KPb2Br5

    (KPB) is among the most promising bromide host materials because this material

    possesses an incorporation of Nd3+, Tb3+, Dy3+ and Er3+ doping ions and provides

    better homogeneity and quality of doped single crystals [57]. The crystal structure of

    KPB, (having spacegroup P21/c, lattice parameters a=8.854(2) Å, b=7.927(2) Å ,

    c=12.485(3) Å , β=90.05(3)Å and Z=4), is shown in Figure 3.1 [124]. Complex

    polyhedral coordination by bromine atoms was found for both potassium and lead

    atoms. An important step towards practicality was made when the rare-earth-doped

    alkali-lead halide crystals MPb2Hal5 (M = Rb,K and Hal = Cl, Br) were identified as

    promising new low-phonon-energy host materials for mid-IR applications.

  • 45

    The present investigation deals with the growth of lead bromide and potassium

    bromide mixed crystals by slow evaporation technique. The grown crystals (expected

    to be KPb2Br5, KPbBr3, K2PbBr4 and K3PbBr5) were subjected to powder X-ray

    diffraction (PXRD), single crystal XRD, AAS, EDAS, SEM, TGA/DTA, UV-Vis-NIR

    spectral and electrical (both AC and DC) measurements. The results of these

    experiments are reported and discussed in this chapter.

    Figure 3.1: The crystal structure of KPb2Br5 single crystal

  • 46

    3.2 GROWTH OF SINGLE CRYSTALS

    Analytical reagent (AR) grade samples of Lead Bromide (PbBr2), and

    Potassium Bromide (KBr) along with double distilled water were used for the growth

    of Potassium Lead Bromide single crystals. Lead Bromide and Potassium Bromide

    were taken in the ratios 1: 0.5, 1:1, 1:2 and 1:3 dissolved in double distilled water and

    maintained at 80o C for about 60 minutes with continous stirring to ensure

    homogenous temperature and concentration over the entire volume of the solution.

    Temperature as low as 80o C was maintained in order to avoid decomposition of the

    salt. The supersaturated solutions were filtered using 4 micro watman filter paper.

    Then the filtered solutions were kept for free evaporation. Clear tiny needle like

    crystals were obtained in about 20 days. A photograph of the grown crystals is shown

    in Figure 3.2.

    3.3 CHARACTERIZATION

    The powder X- ray diffraction (PXRD) analysis was carried out using an X-

    ray powder diffractometer (PANalytical) with scintillation counter and

    monochromated CuKα (λ = 1.54056 Å) radiation. The samples were scanned over the

    2θ range 10 - 70° at a rate of one degree/minute. The single crystal XRD data were

    collected using an automated 4-circle diffractometer (Enraf Nonius CAD4). Atomic

    absorption spectra were recorded using Perkin Elmer spectrophotometer. The UV-Vis-

    NIR spectrum was recorded in the range of 190 - 900 nm using a Shimadzu UV-2400

    PC spectrometer. SEM and EDAS analysis were carried out to study the morphology

    and elemental compositions .The thermo gravimetric analysis (TG) of the crystal was

    carried out using an Universal V4.1 DTA Instruments, in the temperature range from

    50 to 700o C in nitrogen atmosphere at a scanning rate of 10 K/min.

  • 47

    The AC conductivity, dielectric constant and dielectric loss of the samples were

    determined to an accuracy of ± 2% using an LCR meter (Agilent 4284A) with five

    different frequencies (100 Hz, 1 kHz, 10 kHz, 100 kHz and 1 MHz) at various

    temperatures ranging from 40 –150°C. The measurement of DC electrical conductivity

    was done using the conventional two-probe technique using a million megohm meter

    for temperatures ranging from 40 – 150 °C. The crystals grown are needle shaped ones

    with small thickness. So, crystal portion with sufficient size cannot be out and polished

    for the use of electrical measurements. Hence, in order to make the electrical

    measurements, we have made pellets of the grown crystals and used as the sample for

    the AC and DC electrical measurements. The flat surfaces of the pellet were coated

    with graphite to have a good conductive surface layer.

  • 48

    Figure 3.2: Photograph of the sample crystals grown

    [From left are: KPb2Br5 K PbBr3, K2PbBr4 and K3PbBr5 ]

  • 49

    3.4 RESULTS OBTAINED

    3.4.1 Single Crystal XRD Analysis

    It is observed from the single crystal XRD data that all the crystals crystallize

    in the orthorhombic system except KPbBr3. The KPbBr3 crystal belongs to the

    monoclinic system .The single crystal XRD data for the samples prepared are

    presented in Table 3.1.

    3.4.2 Powder X-ray Diffraction Analysis

    X-ray diffraction data were collected from powder samples using an automated

    X-ray powder diffractometer. The reflections were indexed using a homely designed

    two theta software [125,126]. Figures 3.3-3.6 show the indexed XRD patterns.

  • 50

    Table 3.1: Single crystal XRD data for potassium lead bromide crystals grown in

    the present study

    Crystallographic

    data KPb2Br5 KPbBr3 K2PbBr4 K3PbBr5

    a (Å)

    b (Å)

    c (Å)

    4.702

    8.002

    9.469

    12.134

    4.317

    12.357

    4.685

    7.991

    9.450

    4.703

    8.032

    9.493

    α(º)

    β(º)

    γ(º)

    90

    90

    90

    90

    100.83

    90

    90

    90

    90

    90

    90

    90

    Volume (Å3) 356.2 636 353.8 358.6

    Crystal system orthorhombic monoclinic orthorhombic orthorhombic

  • 51

  • 52

  • 53

  • 54

  • 55

    3.4.3 Atomic Absorption Spectra

    The AAS measurements were carried out using a Perkin Elmer

    spectrophotometer to determine the K and Pb atom contents in the grown crystals. The

    AAS results are given in Table 3.2, which reveal the presence of K+ and Pb2+ ions in

    the crystals.

    3.4.4 Energy Dispersive X-ray Absorption Spectra

    The EDAS spectra observed are shown in Figures (3.7-3.10). Results are

    summarized in Table 3.3. The dominant peaks correspond quite well to the energies of

    lead and bromine while a small hemp at 3.2 keV corresponds to K line of potassium

    (reported in the EDAS international chart), giving a clue that lead is dominant over

    potassium in the crystals grown.

  • 56

    Table 3.2: Atomic absorption spectral data

    Sample

    Atomic content (ppm)

    Pb K

    KPb2Br5 569290 122

    KPbBr3 564784 134

    K2PbBr4 567966 170

    K3PbBr5 561985 199

    Table 3.3: Energy dispersive X-ray absorption spectral data for potassium lead

    bromide crystals

    Sample

    Atomic % of

    Pb K Br

    KPb2Br5 21.69 0.63 75.68

    KPbBr3 35.92 0.47 63.62

    K2PbBr4 31.38 0.23 68.39

    K3PbBr5 20.63 0.28 79.09

  • 57

    Fig

    ure

    3.7

    : E

    DA

    S s

    pect

    rum

    fo

    r K

    Pb

    2B

    r 5

  • 58

    Fig

    ure

    3.8

    : E

    DA

    S s

    pect

    rum

    fo

    r K

    Pb

    Br 3

  • 59

    Fig

    ure

    3.9

    : E

    DA

    S s

    pec

    tru

    m f

    or

    K2P

    bB

    r 4

  • 60

    Fig

    ure

    3.1

    0:

    ED

    AS

    sp

    ectr

    um

    fo

    r K

    3P

    bB

    r5

  • 61

    3.4.5 Scanning electron microscopic pictures

    The quality of the grown crystals can be inferred to some extent by observing

    the surface morphology of the cut and polished crystals. The SEM image of all the 4

    crystal samples observed are shown in Figures 3.11-3.14. It is observed from SEM

    photographs that all the crystals are free from cracks and significant visible inclusions.

    They have rod like morphology.

    3.4.6 UV- Visible Absorption Spectra

    The observed UV- Visible spectra for the four grown potassium lead bromide

    crystals are shown in Figure 3.15. All the four crystals exhibit absorption edges at

    nearly 370 nm and good transmittance in the visible region. The transmittance (T) in

    the order of T for KPb2Br5 > T for K2PbBr4>T for K3PbBr5>T for KPbBr3.

  • 62

    Figure 3.11: SEM photograph of KPb2Br5 crystals

    Figure 3.12: SEM photograph of KPbBr3 crystals

  • 63

    Figure 3.13: SEM photograph of K2PbBr4 crystals

    Figure 3.14: SEM photograph of K3PbBr5 crystals

  • 64

    300 350 400 450 500 550 600 650 700 750

    0

    1

    2

    3

    4

    5

    ab

    so

    rption

    (arb

    .un

    it)

    Wavelength(nm)

    KPb2Br

    5

    KPbBr3

    K2PbBr

    4

    K3PbBr

    5

    Figure 3.15: UV-Vis spectra observed for the grown crystals

  • 65

    3.4.7 Thermal Studies

    The thermo gravimetric and differential thermal analysis [127-129] were

    carried out for all the four crystals and the patterns observed are presented in Figures

    3.16 to 3.19. The plots are marked with temperature against weight loss percentage.

    The TGA patterns show that all the grown crystals were thermally stable up to 500oC.

    The exothermic peak at 373oC for KPb2Br5 single crystal corresponds to the phase

    transition [130]. For the remaining crystals the phase transitions occur at 372.6oC,

    373oC and 368oC respectively.

  • 66

    Fig

    ure

    3.1

    6:

    TG

    / D

    TA

    pa

    tter

    n o

    f K

    Pb

    2B

    r 5 s

    ingle

    cry

    sta

    l

  • 67

    Fig

    ure

    3.1

    7:

    TG

    / D

    TA

    patt

    ern

    of

    KP

    bB

    r 3 s

    ing

    le c

    ry

    sta

    l

  • 68

    Fig

    ure

    3.1

    8 :

    TG

    / D

    TA

    patt

    ern

    of

    K2P

    bB

    r 4 s

    ing

    le c

    ryst

    al

  • 69

    Fig

    ure

    3.1

    9:

    TG

    / D

    TA

    pa

    tter

    n o

    f K

    3P

    bB

    r 5 s

    ing

    le c

    ryst

    al

  • 70

    3.4.8 Dielectric Parameters

    The dielectric parameters, viz. the εr, tanδ and σac values obtained in the

    present study for the pelletised samples are provided in Tables 3.4 – 3.15 and also

    shown in Figures 3.20 to 3.31. They are found to increase with increasing temperature

    for all the four crystals considered in the present study. The εr and tanδ values decrease

    while σac value increase with the increase in frequency of the applied field. This

    shows that all the four crystals grown exhibit the normal dielectric behavior.

    3.4.9 The DC conductivities

    Table 3.16 provides the σdc values obtained in the present study for the

    pelletized samples. Also σdc values are shown in Figure 3.32. The DC electrical

    conductivity (σdc) increases, in all the four crystals studied, smoothly with the

    temperature increase through the temperature range considered in the present study. It

    should be noted that the σdc values are more than the σac values at all temperatures for

    all the four potassium lead bromide crystals studied in the present investigation.

  • 71

    Table 3.4: The dielectric constants for KPb2Br5 crystal

    Temp

    ( °C) εr with frequency

    100 Hz 1 kHz 10 kHz 100 kHz 1 MHz

    40 7.199 5.797 4.744 4.458 4.384 50 8.008 6.126 4.875 4.503 4.413 60 8.518 6.374 5.000 4.537 4.428 70 9.357 6.636 5.208 4.586 4.449 80 10.953 6.927 5.356 4.639 4.471 90 11.587 7.218 5.583 4.709 4.494

    100 12.696 7.434 5.753 4.763 4.507 110 14.920 7.768 5.975 4.835 4.524 120 15.403 7.961 6.111 4.883 4.533 130 15.600 8.041 6.234 4.930 4.538

    140 16.242 8.192 6.283 4.951 4.539 150 16.771 8.334 6.295 4.972 4.544

    Table 3.5: The dielectric constants for KPbBr3 single crystal

    Temp

    ( °C) εr with frequency

    100 Hz 1 kHz 10 kHz 100 kHz 1 MHz

    40 17.212 7.499 4.947 4.397 4.266

    50 22.300 8.182 5.187 4.437 4.294

    60 28.379 8.976 5.443 4.492 4.317

    70 36.756 9.892 5.738 4.559 4.363

    80 45.017 10.937 6.045 4.632 4.390

    90 54.792 12.392 6.372 4.721 4.419

    100 64.096 13.874 6.752 4.809 4.444

    110 77.670 15.637 7.185 4.926 4.473

    120 87.500 16.959 7.471 5.013 4.495

    130 93.903 17.983 7.712 5.083 4.517

    140 102.807 19.196 8.037 5.190 4.546

    150 109.689 21.429 8.936 5.607 4.682

  • 72

    Table 3.6: The dielectric constants for K2PbBr4 crystal

    Temp

    ( °C)

    εr with frequency

    100 Hz 1 kHz 10 kHz 100 kHz 1 MHz

    40 13.411 8.628 6.203 5.173 5.022

    50 16.076 8.892 6.442 5.216 5.043

    60 20.723 9.453 6.783 5.317 5.082

    70 26.768 10.163 7.096 5.432 5.119

    80 33.626 11.097 7.382 5.559 5.153

    90 40.324 12.259 7.672 5.700 5.188

    100 49.240 13.753 8.039 5.886 5.227

    110 56.992 15.027 8.289 6.008 5.261

    120 61.957 16.385 8.601 6.181 5.287

    130 66.788 17.204 8.819 6.306 5.309

    140 74.861 17.599 8.937 6.371 5.333

    150 79.357 19.423 9.038 6.406 5.343

    Table 3.7: The dielectric constants for K3PbBr5 crystal

    Temp

    ( °C) εr with frequency

    100 Hz 1 kHz 10 kHz 100 kHz 1 MHz

    40 18.692 8.544 6.324 5.232 5.079

    50 22.719 9.191 6.589 5.309 5.098

    60 27.792 10.048 6.867 5.418 5.125

    70 31.979 11.128 7.113 5.529 5.158

    80 40.648 12.453 7.374 5.659 5.179

    90 48.268 14.290 7.688 5.823 5.213

    100 54.120 16.079 7.988 5.958 5.239

    110 61.198 18.356 8.411 6.147 5.284

    120 66.568 20.161 8.724 6.267 5.314

    130 70.970 21.197 8.994 6.378 5.338

    140 77.448 22.872 9.351 6.358 5.377

    150 85.364 23.862 9.421 6.571 5.394

  • 73

    Table 3.8: The dielectric loss factors for K Pb2Br5 crystal

    Temp

    ( °C) tanδ with frequency

    100 Hz 1 kHz 10 kHz 100 kHz 1 MHz

    40 0.236 0.169 0.090 0.023 0.005

    50 0.308 0.181 0.109 0.031 0.006

    60 0.363 0.187 0.125 0.039 0.008

    70 0.442 0.206 0.143 0.048 0.01

    80 0.526 0.232 0.159 0.059 0.012

    90 0.671 0.283 0.173 0.071 0.016

    100 0.805 0.311 0.18 0.081 0.019

    110 0.815 0.356 0.192 0.095 0.023

    120 0.844 0.382 0.196 0.104 0.026

    130 0.940 0.403 0.203 0.114 0.029

    140 0.952 0.410 0.208 0.116 0.031

    150 1.034 0.428 0.218 0.118 0.032

    Table 3.9: The dielectric loss factors for KPbBr3 crystal

    Temp

    ( °C) tanδ with frequency

    100 Hz 1 kHz 10 kHz 100 kHz 1 MHz

    40 1.668 0.686 0.254 0.053 0.008

    50 1.762 0.814 0.309 0.070 0.011

    60 1.809 0.958 0.360 0.089 0.014

    70 1.936 1.115 0.418 0.110 0.018

    80 1.993 1.283 0.476 0.134 0.022

    90 2.094 1.474 0.549 0.161 0.028

    100 2.228 1.646 0.621 0.189 0.034

    110 2.467 1.887 0.716 0.225 0.042

    120 2.595 2.078 0.783 0.248 0.048

    130 2.810 2.239 0.842 0.266 0.053

    140 3.141 2.471 0.931 0.298 0.061

    150 3.390 2.703 1.273 0.350 0.075

  • 74

    Table 3.10: The dielectric loss factors for K2PbBr4 crystal

    Temp

    ( °C) tanδ with frequency

    100 Hz 1 kHz 10 kHz 100 kHz 1 MHz

    40 0.705 0.288 0.202 0.061 0.010

    50 0.819 0.370 0.226 0.080 0.012

    60 0.926 0.469 0.244 0.099 0.016

    70 0.942 0.572 0.264 0.118 0.021

    80 0.955 0.683 0.321 0.138 0.026

    90 0.982 0.773 0.352 0.157 0.031

    100 1.042 0.893 0.357 0.182 0.039

    110 1.126 0.981 0.395 0.209 0.047

    120 1.304 1.077 0.433 0.220 0.055

    130 1.398 1.129 0.456 0.230 0.059

    140 1.450 1.154 0.459 0.236 0.061

    150 1.503 1.203 0.466 0.239 0.066

    Table 3.11: The dielectric loss factors for K3PbBr5 crystal

    Temp

    ( °C) tanδ with frequency

    100 Hz 1 kHz 10 kHz 100 kHz 1 MHz

    40 0.775 0.414 0.209 0.072 0.010

    50 0.803 0.506 0.229 0.090 0.013

    60 0.876 0.597 0.255 0.111 0.018

    70 0.878 0.674 0.282 0.128 0.023

    80 0.900 0.754 0.320 0.146 0.028

    90 0.908 0.833 0.371 0.166 0.036

    100 0.924 0.878 0.418 0.182 0.043

    110 1.101 0.954 0.480 0.204 0.052

    120 1.125 0.986 0.531 0.217 0.059

    130 1.210 1.019 0.556 0.229 0.065

    140 1.264 1.065 0.613 0.246 0.073

    150 1.366 1.090 0.631 0.250 0.076

  • 75

    Table 3.12: The AC electrical conductivities for K Pb2Br5 crystal

    Table 3.13: The AC electrical conductivities for KPbBr3 crystal

    Temp

    ( °C) σac (x 10

    -7 mho/m ) with frequency

    100 Hz 1 kHz 10 kHz 100 kHz 1 MHz

    40 1.597 2.861 6.989 12.961 18.979

    50 2.185 3.704 8.913 17.272 26.272

    60 2.855 4.782 10.898 22.233 33.610

    70 3.958 6.134 13.339 27.893 43.675

    80 4.990 7.804 16.003 34.522 53.714

    90 6.381 10.159 19.456 42.273 68.813

    100 7.942 12.701 23.320 50.554 84.031

    110 10.657 16.410 28.611 61.643 104.478

    120 12.628 19.599 32.535 69.140 119.996

    130 14.675 22.393 36.115 75.193 133.135

    140 17.959 26.381 41.612 86.016 154.211

    150 20.681 32.214 63.267 109.147 195.304

    Temp

    ( °C) σac (x 10

    -7 mho/m ) with frequency

    100 Hz 1 kHz 10 kHz 100 kHz 1 MHz

    40 0.094 0.545 2.375 5.703 12.191

    50 0.137 0.617 2.955 7.764 14.727

    60 0.172 0.663 3.476 9.841 19.703

    70 0.230 0.760 4.142 12.243 24.743

    80 0.320 0.894 4.736 15.222 29.836

    90 0.432 1.136 5.372 18.594 39.994

    100 0.568 1.286 5.760 21.456 47.628

    110 0.676 1.538 6.380 25.546 57.875

    120 0.723 1.691 6.662 28.242 65.552

    130 0.816 1.802 7.038 31.257 73.188

    140 0.860 1.868 7.269 31.942 78.254

    150 0.964 1.984 7.632 32.631 80.878

  • 76

    Table 3.14: The AC electrical conductivities for K2PbBr4 crystal

    Temp

    ( °C) σac (x 10

    -7 mho/m ) with frequency

    100 Hz 1 kHz 10 kHz 100 kHz 1 MHz

    40 0.526 1.382 6.969 17.551 27.928

    50 0.732 1.830 8.097 23.208 33.659

    60 1.067 2.466 9.204 29.276 45.219

    70 1.402 3.233 10.418 35.650 59.785

    80 1.786 4.215 13.178 42.669 74.518

    90 2.202 5.270 15.019 49.770 89.451

    100 2.854 6.830 15.961 59.574 113.367

    110 3.569 8.199 18.210 69.839 137.522

    120 4.493 9.814 20.712 75.629 161.729

    130 5.193 10.802 22.365 80.658 174.220

    140 6.037 11.295 22.815 83.623 180.917

    150 6.633 12.995 23.425 85.144 196.134

    Table 3.15: The AC electrical conductivities for K3PbBr5 crystal

    Temp

    ( °C) σac (x 10

    -7 mho/m ) with frequency

    100 Hz 1 kHz 10 kHz 100 kHz 1 MHz

    40 0.806 1.967 7.351 20.949 28.250

    50 1.015 2.587 8.392 26.576 36.857

    60 1.354 3.336 9.738 33.449 51.305

    70 1.562 4.171 11.155 39.359 65.976

    80 2.035 5.222 13.124 45.954 80.656

    90 2.438 6.620 15.864 53.762 104.368

    100 2.781 7.851 18.571 60.311 125.287

    110 3.747 9.739 22.452 69.738 152.827

    120 4.165 11.056 25.765 75.630 174.366

    130 4.776 12.013 27.811 81.227 192.962

    140 5.443 13.547 31.878 86.984 218.312

    150 6.485 14.465 33.060 91.356 227.988

  • 77

    40 60 80 100 120 140 160

    4

    6

    8

    10

    12

    14

    16

    18 100 Hz 1kHz 10kHz 100kHz 1MHz

    εε εε r

    Temperature(oC)

    Figure 3.20: Temperature dependence of dielectric constant

    for KPb2Br5 crystal for various frequencies

    40 60 80 100 120 140 160

    0

    20

    40

    60

    80

    100

    100 Hz 1kHz 10kHz 100kHz 1MHz

    εε εε r

    Temperature(oC)

    Figure 3.21: Temperature dependence of dielectric constant

    for KPbBr3 crystal for various frequencies

  • 78

    40 60 80 100 120 140 160

    0

    10

    20

    30

    40

    50

    60

    70

    80

    100 Hz

    1kHz

    10kHz

    100kHz

    1MHz

    εε εε r

    Temperature(oC)

    Figure 3.22: Temperature dependence of dielectric constant

    for K2PbBr4 crystal for various frequencies

    40 60 80 100 120 140 160

    10

    20

    30

    40

    50

    60

    70

    80

    90 100 Hz

    1kHz

    10kHz

    100kHz

    1MHz

    εε εε r

    Temperature (oC)

    Figure 3.23: Temperature dependence of dielectric constant

    for K3PbBr5 crystal for various frequencies

  • 79

    40 60 80 100 120 140 160

    0.0

    0.2

    0.4

    0.6

    0.8

    1.0

    tanδδδδ

    Temperature(oC)

    100 Hz 1kHz 10kHz 100kHz 1MHz

    Figure 3.24: Temperature dependence of dielectric loss factor

    for KPb2Br5 crystal for various frequencies

    40 60 80 100 120 140 160

    0.0

    0.5

    1.0

    1.5

    2.0

    2.5

    3.0

    3.5

    Temperature(o C)

    B B B B B

    tan

    δδ δδ

    Temperature(o C)

    Figure 3.25: Temperature dependence of dielectric loss factor

    for KPbBr3 crystal for various frequencies

  • 80

    40 60 80 100 120 140 160

    0.0

    0.4

    0.8

    1.2

    1.6 100 Hz

    1kHz

    10kHz

    100kHz

    1MHz

    tan δδδδ

    Temperature(o C)

    Figure 3.26: Temperature dependence of dielectric loss factor

    for K2PbBr4 crystal for various frequencies

    40 60 80 100 120 140 160

    0.0

    0.3

    0.6

    0.9

    1.2

    1.5 100 Hz

    1kHz

    10kHz

    100kHz

    1MHz

    tan δδ δδ

    Temperature(oC)

    Fig 3.27: Temperature dependence of dielectric loss factor

    for K3PbBr5 crystal for various frequencies

  • 81

    40 60 80 100 120 140 160

    0

    10

    20

    30

    40

    50

    60

    70

    80

    90

    σσ σσac

    Temperature(oC)

    100 Hz

    1kHz

    10kHz

    100kHz

    1MHz

    Figure 3.28: The AC electrical conductivities (x10-7

    mho/m)

    for K Pb2Br5 crystal for various frequencies

    40 60 80 100 120 140 160

    0

    30

    60

    90

    120

    150

    180

    210 100 Hz 1kHz 10kHz 100kHz 1MHz

    σσ σσac

    Temperature(oC)

    Fig 3.29: The AC electrical conductivities (x10-7

    mho/m)

    for KPbBr3 crystal for various frequencies

  • 82

    40 60 80 100 120 140 160

    0

    30

    60

    90

    120

    150

    180

    210

    Temperature(oC)

    100 Hz

    1kHz

    10kHz

    100kHz

    1MHz

    σσ σσac

    Fig 3.30: The AC electrical conductivities (x10-7

    mho/m)

    for K2PbBr4 crystal for various frequencies

    40 60 80 100 120 140 160

    0

    50

    100

    150

    200

    250

    Temperature(oC)

    σσ σσac

    Fig 3.31:The AC electrical conductivities (x10-7

    mho/m)

    for K3PbBr5 crystal for various frequencies

  • 83

    Table 3.16: The DC electrical conductivities for potassium lead bromide crystals

    Temperature

    (o C)

    σσσσdc ( x 10-5

    mho / m ) for

    K Pb2Br5 KPbBr3 K2PbBr4 K3PbBr5

    40 4.990 7.885 7.769 7.764 50 5.106 7.900 7.809 7.814

    60 5.166 7.935 7.950 8.156

    70 5.196 7.955 7.965 8.191

    80 5.271 7.975 7.990 8.226

    90 5.402 7.990 8.035 8.246

    100 5.533 8.005 8.819 8.256

    110 5.668 8.015 9.317 8.538

    120 5.759 8.020 9.382 8.749

    130 6.975 8.030 9.533 8.809

    140 7.417 8.040 9.568 8.920

    150 7.548 8.091 9.875 9.312

    40 60 80 100 120 140 160

    5

    6

    7

    8

    9

    10

    σσ σσdc

    Temperature(oC)

    KPb2Br

    5

    KPbBr3

    K2PbBr

    4

    K3PbBr

    5

    Figure 3.32: The DC electrical conductivities (x10-5

    mho/m)

    for potassium lead bromide crystals

  • 84

    3.5 DISCUSSION

    All the four single crystals (KPb2Br5, KPbBr3, K2PbBr4 and K3PbBr5 as per the

    initial composition considered for crystallization) grown are of needle shape. The

    grown crystals show considerable transparency and mechanical and thermal stabilities.

    Growth of high quality crystals with uniform composition is of great

    importance for high performance devices manufacturing. Among the requirements to

    crystal properties, well-defined composition, macro- and micro- uniformity should be

    mentioned in the first instance. For example, in electronic and optoelectronic

    applications the quality of the active epilayers often depends directly on the chemical

    homogeneity of the substrate. In case of quasibinary solid solutions (A1-xBx)1-sX1+s,

    the composition is characterized by the mole fraction x (which defines the energy band

    gap) and the deviation from stoichiometry δ (which influences the carrier

    concentration) [133]. It should be noted that in the case of lead chalcogenides, the

    deviation from stoichiometry can be effectively controlled by a post -growth annealing

    under Pb or chalcogen vapour, whereas the x value should be fixed during the growth

    process. Axial or radial segregation, both at the macroscopic and the microscopic

    scale, is one of the major factors limiting the yield of bulk crystals grown from the

    melt or from the vapour. Besides, it should be mentioned that essential axial and radial

    segregation causes noticeable increase of the dislocation density in the grown crystals.

    The crystals of alloys are frequently subjected to serious distillation-like (i.e.,

    thermodynamically imposed) segregation [134] leading to essential variation in

    composition between the initially and finally grown fragments of the crystals, which

    restricts the applicability of the obtained materials for the device manufacturing.

  • 85

    Shtanov and Yashine [133] have illustrated using (Pb1-xSnx)1-δSe1+δ solid solutions as

    an example the application of T-x-y phase diagram for the control of the crystal

    composition of alloy crystals during Bridgman growth.

    The alloying of two or more metals has always been systematically used in

    order to modify and improve the properties of the metallurgical materials. The mixing

    of ionic solids has been equally investigated in the purpose of obtaining new materials

    with specific properties. A very important situation that is special to ionic crystals

    arises when these crystals are doped (or added) with impurities. The behavior depends

    on the valence state of impurity ions. When an ion like Ca2+ replaces a Na+ ion in

    NaCl crystal it results in the creation of a positive ion vacancy or a negative ion

    interstitial. Anion impurities also produce corresponding charge compensating point

    defects. Whether an impurity ion goes to substitutional position or interstitial position,

    is determined by the ionic radius of the doped (or added) ion and also on the electronic

    configuration of the ion. If the impurity ion behaves in the same way as the lattice ion,

    a wide range of solubility may be possible. To describe this, the term ‘mixed crystal’ is

    used. It should be realized, however, that the impurity ions are all distributed at

    random throughout the lattice so that the term ‘solid solution’ is more appropriate.

    Two compounds or elements are said to form a continuous solid solution if a

    single lattice parameter as measured by X-ray powder diffraction patterns, can be

    assigned to the solid solution at all compositions. In the continuous solid solutions of

    alkali halides, Retger’s law (additivity of molar volumes) [135] and Vegard’s law

    (linear variation of lattice parameter with composition) [136] are closely followed as

    indicated by X-ray diffraction studies.

  • 86

    Potassium and lead halides are soluble in water. It is possible to grow, in

    certain cases, mixed crystals by evaporation of aqueous solution. However, the melt

    technique is the commonly employed technique to grow mixed crystals.

    Tobolsky [137] showed that for ionic crystals like alkali halides, complete

    miscibility is possible only above a particular temperature given by T=4.5δ2, where δ

    being the percentage deviation in the lattice parameter. As per this, alkali halide

    solutions have got only limited miscibility at room temperature.

    Vertical Bridgman technique (melt technique) is mostly used for growing

    single crystals of alkali lead halides and alkali halides. At temperatures nearer to the

    freezing point, the crystals are observed to be fairly transparent. When the crystals are

    cooled from high temperature to the room temperature in a relatively short time the

    transparency of the crystals is found to be reduced and becoming white. This is partly

    due to the introduction of thermal defects since the rate of cooling is high.

    Transparency can be improved by reducing the rate of cooling and consequently

    reducing the introduction of thermal defects. In this situation, growth of crystals by

    the solution methods at near ambient temperatures can be considered to be useful.

    A3MX5.2H2O (where A is a univalent cation, M is a divalent metal and X is a

    halogen) crystals exhibit unusual physical properties. They have attracted a great deal

    of attention owing to the occurrence of varying stoichiometries in these compounds

    [138]. A3MX5.2H2O crystals are closely related to A2MX4 and both represent the

    largest known group of insulating crystals with structurally incommensurate phases

    [139]. Byrappa et al [140] have mentioned that no detailed X-ray crystal structure

    (refinement) is available for A3MX5.2H2O type crystals. However, Krishna kumar et al

  • 87

    [141], without giving any experimental details, have described in brief the crystal

    structure of Na3BaCl5. 2H2O crystals. The structure described by them is as shown in

    Figure 3.33. The Na3BaCl5. 2H2O crystals consist of metal ions such as Na and Ba,

    Cl- ions and two H2O molecules. The chlorine atoms lie at the vertices of trigonal

    bipyramidal geometery. Three Cl- ions form electrovalent bonds between the adjacent

    Na+ and central Ba2+ ions. This bond is naturally the attractive electrostatic force

    existing between positive and negative ions when they are brought into a closer

    distance. The two H2O molecules are stacked diagonally up and down, which may

    have a linkage with the adjacent Na+ ions.

    Figure 3.33: Crystal structure of Na3BaCl5.2H2O

    Manonmani et al [142,143,113] have attempted to grow from aqueons

    solutions by the slow (free) evaporation of solution method single crystals of

    (composition considered in the solution) K3BaCl5.2H2O, K3CaCl5.2H2O, and

    Na3CaCl5.2H2O and characterize them. They have confirmed by experimental means

    (XRD, TGA, AAS and FTIR and Raman spectroscopic measurements) that non

  • 88

    stoichiometry is present in all these crystals grown. These compositions were

    estimated as K3.088 Ba0.912Cl4.832.1.369H2O for K3BaCl5.2H2O,

    K3.611Ca0.389Cl4.389.1.177H2O for K3CaCl5.2H2O and Na3.665 Ca0.335 Cl4.335.0.153H2O

    for Na3CaCl5.2H2O. The variation of DC electrical conductivity with temperature

    observed by them indicates that KCl-BaCl2 is a dielectric material while the others

    (KCl-CaCl2 and NaCl-CaCl2) are ionic conductors. Less non stoichiometry retains the

    dielectric nature (usual for ionic substances) and higher non stoichiometry leads to

    ionic conductors.

    Keller [144] has reported that orthorhombic symmetry is shown by single

    crystals of K2PbBr4.H2O: a=8.537 Å, b=13.083Å,c=4.594Å. Z=2, space group

    222 11P . He has demonstrated the analogy between the crystal structure of

    K2PbBr4.H2O and KPb2Br5 by group – subgroup relations of space groups.

    Iwadate et al [145] investigated the complex formation and ionic aggregation in

    PbBr2-NaBr and PbBr2-KBr melts by Raman spectroscopy with supplementary use of

    molecular orbital calculations (MO). Their results suggest that there existed PbBr42-

    complex ions in the mixture melts, which might not form further clustering or

    network.

    Kusumoto et al [146] have mentioned that as PbBr2 hardly dissolves in water

    (0.97g/100g water), it is not suitable for aqueous solution growth. So, they have grown

    PbBr2 single crystals in silica gel and obtained the following results: i) Transparent

    PbBr2 single crystals were obtained in a high-acidic gel, ii) sizable single crystals of

    PbBr2 were also grown in the liquid placed over a gel because the gel barrier had the

    task of slowing down the diffusion rate of reacting ions. Also, they have mentioned

  • 89

    that it was difficult for them to grow a PbBr2 crystal of optical high quality from the

    melt even though they used a 99.999% purity material.

    Rademaker et al [72] observed that the KPb2Br5 (KPB) crystal grown by the

    Bridgman (melt) method is biaxial and has a monoclinic crystal structure with a space

    group symmetry cP /21 . From an X-ray single–crystal diffraction study of KPB, they

    determined the lattice parameters to be a=9.256 (2) Å, b=8.365 (2) Å, c=13.025 (3) Å

    and β=90.00 (3) , Z=4. These values were obtained for crystals evidencing substantial

    micro twinning. For crystals with no twinning structures, the given lattice parameters

    will change, but further research is needed to clarify this situation. Determined from

    lattice constants, the density was found to be 5.62g/cm3 which matched with that

    available in other literature, 5.60g/cm3 [91]. Rademaker et al [72] also have observed

    a phase transition in KPB at a temperature of 249°C which matched with that of 242°C

    reported in other literature [89,91].

    Hommerich et al [147] have investigated KPb2Br5 (KPB) as a potential new

    solid state laser host material. The fundamental absorption edge of KPB is located at

    ~400nm. At longer wavelength the transmission ranged between ~75-77% without

    any significant absorption features.

    According to Beck et al [90] KPb2Br5 (KPB) is monoclinic (space group

    cP /21 ) with an angle β very close to 90°. The unit cell parameters are a=9.264,

    b=8.380, c=13.063 Å and β=90.06°; Z=4. Pb2+ ions occupy two non-equivalent lattice

    sites of low symmetry, one site is a distorted octahedron and the second site is a

    distorted trigonal prism.

  • 90

    Lead bromide belongs to the orthorhombic symmetry class D2h and mmm

    space group [148]. The lattice parameters are: a=8.0620(1)Å, b=9.53930(13) Å and

    c=4.73480(6)Å. V=364.134Å3, Z=4, ρ=6.695gcm-1. PbBr2 exhibits extraordinary

    properties, including a very large optical transparency range, an anomalously slow

    longitudinal wave velocity in the [010] direction, a large birefringence and a high

    figure of merit (M2-550, about twelve times higher than that of PbMoO4). Therefore

    this material has good application potential, especially for infrared devices where large

    diffraction efficiencies are needed. Crystals were grown by the vertical Bridgman

    method.

    Singh et al [49] observed that lead bromide crystals severely cracked during the

    cool down period after the growth, due to destructive phase transformation. The

    energy of phase transformation was suppressed by silver doping and large crystals

    were grown from the melt. The acoustic attenuation constant, an important parameter

    for the devices, was almost identical for doped (below 3000 ppm) and undoped

    crystals.

    In the present study, the results obtained through X-ray diffraction, AAS and

    EDAS measurements indicate the absence of proper mixing of KBr and PbBr2 in all

    the four potassium lead bromide crystals grown. The grown crystals may be

    considered as K+ doped PbBr2 single crystals. However, the thermal stability and the

    temperature at which the phase transition occurs in all the four crystals studied are

    similar. The phase transition occurs at ~370°C (see section 3.4.7) which is largely

    deviated from that observed for KPb2Br5 crystals grown by the melt method (~245°C)

    [16-18]. Singh et al [49] have presented a solid/solid phase transformation observed

    by DTA in PbBr2 at 365°C. So, the results obtained in the present study through

  • 91

    thermal analysis also evidence the formation of KBr added PbBr2 crystals and not the

    proposed mixed crystals. So, the chemical formulae used to represent the grown

    potassium lead bromide crystals are not correct. However, we use here as the sample

    representation. Since the initial composition used for the growth of crystal is the same.

    The lattice parameters obtained in the present study for KPb2Br5, K2PbBr4 and

    K3PbBr5 are nearly same with the orthorhombic crystal system. However, the lattice

    parameters obtained for KPbBr3 are highly deviated and also with a different crystal

    system (monoclinic). This may be due to lattice distortion which is evident from the

    considerably lower Br- and higher Pb2+ contents when compared to the other three

    crystals considered (see table 3.3).

    The optical absorption edges observed for all the four potassium lead bromide

    crystals grown in the present study are nearly 370 nm which is significantly less than

    that observed for the melt grown KPb2Br5 (~400 nm) [147]. Like PbBr2 crystal, the

    four crystals considered in the present study exhibit a large optical transparency.

    Moreover, the transmittance observed is significantly more than that observed for

    PbBr2 [148]. Even though they are not properly mixed potassium lead bromide

    crystals, all the four single crystals grown in the present study exhibit superior optical

    characteristics required for acousto-optical (AO) devices. The large optical

    transparency range of these crystals is very useful for wide band or multiple band AO

    tuneable filters (AOTF) applications.

    The intrinsic point defects in lead bromide are supposed to be either of the

    Schottky or of the Frenkel type. Tubandt et al [149] concluded from transport

    measurements that the electric current in lead bromide is carried exclusively by the

  • 92

    bromine ions. Therefore it is not necessary to consider the lattice defects in the lead

    ion sub-lattice as charge carriers. The crystal structure of lead bromide was

    determined by Brackken and Harang [150] and by Nieuwenkamp [151] and shown a

    coordination structure formed by a disturbed hexagonal packing of bromine ions

    between which the lead ions are placed. These lead ions are surrounded by 9 bromine

    ions at different distances (3.0 to 4.1 Å). In lead bromide the ions at interstitial sites

    might occur only in the mirror planes (100)0 and *

    21)100( , while in the neighbourhood

    of the gliding mirror planes at (001)1/4 and *

    43)001( bromine ions at 4.1 Å have left

    enough space for ions with a radius of at most 0.94 Å.

    The Pauling radii of bromine and lead ions are 1.95 and 1.21Å, respectively, so

    we may disregard the occurrence of interstitial bromine and lead ions and so we

    consider anion and cation vacancies to be the only intrinsic point defects in lead

    bromide. According to a Schottky mechanism their thermal generation is given by

    −+ +⇔BrPb

    VVO 22 ,

    where VPb2+, VBr

    - denote a missing lead ion at a lead ion site and a missing bromine

    ion at bromine ion site, respectively, and O denotes the perfect lattice.

    We assume that the foreign ions keep their normal valency states. The electro-

    neutrality condition upon doping with monovalent cations Me+, divalent ions A2-, or

    trivalent cations Me3+, according to the Koch and Wagner system is then given by

    ][][][2][][ 223 −+

    ++

    −++=+ AMeVMeV

    PbBr

    ,

  • 93

    where square brackets denote concentrations. Upon doping with monovalent

    cations in concentrations well above those of the intrinsic lattice defects this relation

    becomes

    ][][ +−

    = MeVBr

    All foreign ions have radii greater than 0.94Å, so in all cases the bromine ion

    vacancies are to be considered to carry the electrical current in lead bromide [152]. In

    the case of potassium doped PbBr2 crystals the K+ ions may not occur at interstitial

    sites since the Pauling radius of the monovalent potassium ion is 1.51Å.