5.

5.1 SiSiO2SiSiO2Si 1412SiO2 1732

SiGeSiSiSiO2MOS 800~1100

(FEOL)Al 660SiO2 5-1

5-1

5-1 SiO2

40

5-1 SiO2

~1nm

MOSFET 1.5~2nm

~10nm

~0.1m

DRAM ~0.1m

~1m

~0.1m

~1m

~1m

5.2

5-2 (a), (b), (c)

3

H2O

RTP(rapid-thermal processing) 3 5-2 5-3 4

5-2

41

5-3 4 4

5-2 (5~10nm SiO2)

RCA N2800 /SiC ~95010~20/min

N2O2(+Cl) O2(+Cl)N2 2H, 150 /

SiC

5-4 RTP

111 950, 20min RTP 1100, 20sec

5-5 RTP (a)~(c)(e)(d)

42

5-4 RTP (a)(b)

5-5 RTP(a)~(c)(d),(e)

5.3

(5.1)

SiO2(S) + H2(G) (5.2)

Si(S) + O2(G) SiO2(S)

Si(S) + H2O(G)

SiO2O2, H2OSiO2/Si 5-6 5-6 Si

43

SiO2 44%SiSi

3

SiO2/SiSi

2Xoeal-Grove

Xo(t) = (A/2)[ { 1 + ( t + )/( A2/4B )1/2 1} (5.4)

Xo2 = Bt (5.6)

, 5-9

2.27 SiO2

SiO2 SiO2

tSiOD Xo2 + AXo = B(t + ) (5.3)

A, B t = 0 = 0 (5.3)

Xo = (B/A) t (5.5) 2 5-8

5-7

5-8

SiO2H2O

44

SiO2 1000

5.4 2 SiNaFe, NiClHClC2H3Cl2OH

Si(Na+, K+)Si 4 30Si

Na+Si()(terminate)IC 450X

5-9 4

4

2

1 3

45

5-10 Si

5-11 SiO2

/Si

5-12 HRTEM()

)

SiO2 ( Si poly-Si Si

46

5.5

5-3

5-3

1 2 3 4

( )

100

300

500

800

1,000 2,800 4,600 6,500

1,500 3,000 4,900 6,800

1,800 3,300 5,200 7,200

2,100 3,700 5,600 7,500

2,200 4,000 6,000

2,500 4,400 6,200

(1) FEOL BEOL

(3)

(4) ()

(5)

2.25, 2.33g/cm3 SiO2 Si 60, 28

5.6

IC

(2) IC IC

SiO2 Si SiO2 45% SiO2 Si

47