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Supporting Information Flexible Transparent Tribotronic Transistor for Active Modulation of Conventional Electronics Yaokun Pang, Jing Li, Tao Zhou, Zhiwei Yang, Jianjun Luo, Limin Zhang, Guifang Dong*, Chi Zhang* and Zhong Lin Wang*

ars.els-cdn.com · Web viewYaokun Pang, Jing Li, Tao Zhou, Zhiwei Yang, Jianjun Luo, Limin Zhang, Guifang Dong*, Chi Zhang* and Zhong Lin Wang* Figure S 1 . I DS output characteristics

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Page 1: ars.els-cdn.com · Web viewYaokun Pang, Jing Li, Tao Zhou, Zhiwei Yang, Jianjun Luo, Limin Zhang, Guifang Dong*, Chi Zhang* and Zhong Lin Wang* Figure S 1 . I DS output characteristics

Supporting Information

Flexible Transparent Tribotronic Transistor for Active Modulation of Conventional Electronics

Yaokun Pang, Jing Li, Tao Zhou, Zhiwei Yang, Jianjun Luo, Limin Zhang, Guifang Dong*, Chi Zhang* and Zhong Lin Wang*

Figure S1. IDS output characteristics at a drain voltage of -8 V with different sliding

distances and bending radius in compressive strain status. The insets are IDS-d transfer

characteristics and schematics of the FTT with different bending radius.

Page 2: ars.els-cdn.com · Web viewYaokun Pang, Jing Li, Tao Zhou, Zhiwei Yang, Jianjun Luo, Limin Zhang, Guifang Dong*, Chi Zhang* and Zhong Lin Wang* Figure S 1 . I DS output characteristics

Figure S2. IDS output characteristics at a drain voltage of -8 V with different sliding

distances and bending radius in tensile strain status. The insets are IDS-d transfer

characteristics and schematics of the FTT with different bending radius.

Page 3: ars.els-cdn.com · Web viewYaokun Pang, Jing Li, Tao Zhou, Zhiwei Yang, Jianjun Luo, Limin Zhang, Guifang Dong*, Chi Zhang* and Zhong Lin Wang* Figure S 1 . I DS output characteristics

Figure S3. Characteristics of the OTFT in compressive strain status. (a-d) IDS-VDS

output characteristics with different VGS and bending radius. (e) IDS-VGS transfer

characteristics at different bending radius and a drain voltage of -8 V. (f) Relationship

between the IDS and the bending radius, at a drain voltage of -8 V and a gate voltage of

-8 V.

Page 4: ars.els-cdn.com · Web viewYaokun Pang, Jing Li, Tao Zhou, Zhiwei Yang, Jianjun Luo, Limin Zhang, Guifang Dong*, Chi Zhang* and Zhong Lin Wang* Figure S 1 . I DS output characteristics

Figure S4. Characteristics of the OTFT in tensile strain status. (a-d) IDS-VDS output

characteristics with different VGS and bending radius. (e) IDS-VGS transfer

characteristics at different bending radius and a drain voltage of -8 V. (f) Relationship

between the IDS and the bending radius, at a drain voltage of -8 V and a gate voltage of

-8 V.

Videos

Video S1. Modulating luminance of the electroluminescent panel.

Video S2. Modulating magnetism of the electromagnet.

Page 5: ars.els-cdn.com · Web viewYaokun Pang, Jing Li, Tao Zhou, Zhiwei Yang, Jianjun Luo, Limin Zhang, Guifang Dong*, Chi Zhang* and Zhong Lin Wang* Figure S 1 . I DS output characteristics

Video S3. Modulating volume of the buzzer.

Video S4. Modulating micro-motion of the piezoelectric bimorph.

Table S1. The standard deviations of the data in Figure 2d.0 1 2 3 4 5 6 7

Standard Deviation

0.2649 0.3270 0.2743 0.1897 0.3147 0.2083 0.4212 0.3628

Table S2. The standard deviations of the data in Figure 3.Figure 0 1 2 3 4 5 6

3a 0.0474 0.0266 0.0423 0.0525 0.0531 0.0919 0.1525

3b 0.0447 0.0381 0.1333 0.0121 0.0062 0.0115 0.0603

3d 0.0594 0.0712 0.0783 0.0557 0.0512 0.1502 0.1580

3e 0.0162 0.0298 0.0329 0.0194 0.0362 0.0282 0.0339

Table S3. The standard deviations of the data in Figure 4.Figure 0 200 400 600 800 1000

4c 0.2473 0.5715 0.61648 0.2513 0.4206 0.3690

4d 0.1350 0.3242 0.3966 0.3330 0.2978 0.1874

Table S4. The standard deviations of the data in Figure 5.Figure 1 2 3 4 5 6 7

5c 2.1602 1.247 5.0995 5.7927 3.2998 2.8674 4.3205

5d 0.0243 0.0817 0.1700 0.2160 0.1414 0.0816 0.0471

5e 0.1700 0.3300 0.3265 0.1247 0.2625 0.1414 0.2450

5f 0.0026 0.0017 0.0041 0.0063 0.0013 0.0025 0.0036