BUK7214-75B · 2017. 4. 20. · BUK7214-75B md,pdMtvµg2g;=0Lg(nnMtSecuMdudMrdh Nexperia BUK7214-75B N-channel TrenchMOS standard level FET All information provided in this document

BUK7214-75BN-channel TrenchMOS standard level FET18 July 2013 Product data sheet

1. General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.

2. Features and benefits• AEC Q101 compliant• Low conduction losses due to low on-state resistance• Suitable for standard level gate drive sources• Suitable for thermally demanding environments due to 175 °C rating

3. Applications• 12 V, 24 V and 42 V loads• Automotive systems• General purpose power switching• Motors, lamps and solenoids

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 75 V

ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1; Fig. 3 - - 69 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 158 W

Static characteristics

RDSon drain-source on-stateresistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;Fig. 11; Fig. 12

- 12.6 14 mΩ

Dynamic characteristics

QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 60 V;Tj = 25 °C; Fig. 13

- 15 - nC

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source avalancheenergy

ID = 69 A; Vsup ≤ 75 V; RGS = 50 Ω;VGS = 10 V; Tj(init) = 25 °C; unclamped

- - 136 mJ

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK7214-75BN-channel TrenchMOS standard level FET

BUK7214-75B All information provided in this document is subject to legal disclaimers.

Product data sheet 18 July 2013 2 / 12

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 G gate

2 D drain[1]

3 S source

mb D mounting base; connected todrain

3

2

mb

1

DPAK (SOT428)

S

D

G

mbb076

[1] It is not possible to make a connection to pin 2

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

BUK7214-75B DPAK plastic single-ended surface-mounted package (DPAK); 3 leads(one lead cropped)

SOT428

7. MarkingTable 4. Marking codesType number Marking code

BUK7214-75B BUK7214-75B

8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 75 V

VDGR drain-gate voltage RGS = 20 kΩ - 75 V

VGS gate-source voltage -20 20 V

Tmb = 25 °C; VGS = 10 V; Fig. 1; Fig. 3 - 69 AID drain current

Tmb = 100 °C; VGS = 10 V; Fig. 1 - 49 A

IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3 - 276 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 158 W





Symbol Parameter Conditions Min Max Unit

Tstg storage temperature -55 175 °C

Tj junction temperature -55 175 °C

Source-drain diode

IS source current Tmb = 25 °C - 69 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 276 A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-sourceavalanche energy

ID = 69 A; Vsup ≤ 75 V; RGS = 50 Ω;VGS = 10 V; Tj(init) = 25 °C; unclamped

- 136 mJ

003aal164

0 40 80 120 160 2000

20

40

60

80

Tj (°C)

IDID(A)(A)

Fig. 1. Continuous drain current as a function ofmounting base temperature

Tmb (°C)0 20015050 100

03aa16

40

80

120

Pder(%)

0

Fig. 2. Normalized total power dissipation as afunction of mounting base temperature





03nl20

VDS (V)1 10310210

102

10

103

ID(A)

1

DC

100 ms

10 ms

Limit RDSon = VDS / ID

1 ms

tp = 10 µs

100 µs

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistancefrom junction tomounting base

Fig. 4 - - 0.95 K/W

Rth(j-a) thermal resistancefrom junction toambient

- 71.4 - K/W

03nk52

single shot

0.2

0.1

0.05

0.02

10- 3

10- 2

10- 1

1

10- 6 10- 5 10- 4 10- 3 10- 2 10- 1 1tp (s)

Zth(j-mb)(K/W)

δ = 0.5

tp

tp

T

P

t

Tδ =

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration





10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics

ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 75 - - VV(BR)DSS drain-sourcebreakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 70 - - V

ID = 1 mA; VDS = VGS; Tj = 175 °C;Fig. 10

0.9 - - V

ID = 1 mA; VDS = VGS; Tj = 25 °C;Fig. 10

2 3 4 V

VGS(th) gate-source thresholdvoltage

ID = 1 mA; VDS = VGS; Tj = -55 °C;Fig. 10

- - 4.4 V

VDS = 75 V; VGS = 0 V; Tj = 175 °C - - 500 µAIDSS drain leakage current

VDS = 75 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current

VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA


- - 33 mΩRDSon drain-source on-stateresistance


- 12.6 14 mΩ

Dynamic characteristics

QG(tot) total gate charge - 41 - nC

QGS gate-source charge - 9 - nC

QGD gate-drain charge

ID = 25 A; VDS = 60 V; VGS = 10 V;Tj = 25 °C; Fig. 13

- 15 - nC

Ciss input capacitance - 1959 2612 pF

Coss output capacitance - 326 391 pF

Crss reverse transfercapacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;Tj = 25 °C; Fig. 14

- 159 218 pF

td(on) turn-on delay time - 18 - ns

tr rise time - 114 - ns

td(off) turn-off delay time - 52 - ns

tf fall time

VDS = 25 V; RL = 1.2 Ω; VGS = 10 V;RG(ext) = 10 Ω; Tj = 25 °C

- 45 - ns

LD internal draininductance

measured from drain to centre of die ;Tj = 25 °C

- 2.5 - nH

LS internal sourceinductance

measured from source lead to sourcebond pad ; Tj = 25 °C

- 7.5 - nH





Symbol Parameter Conditions Min Typ Max Unit

Source-drain diode

VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15 - 0.85 1.2 V

trr reverse recovery time - 74 - ns

Qr recovered charge

IS = 20 A; dIS/dt = -100 A/µs;VGS = -10 V; VDS = 30 V; Tj = 25 °C - 94 - nC

03nl17

0

50

100

150

200

250

0 2 4 6 8 10VDS (V)

ID(A)

Label is VGS (V)

10

14

9.598.5

8

7.5

7

6.5

65.554.5

2012

Fig. 5. Output characteristics: drain current as afunction of drain-source voltage; typical values

03nl16

5

10

15

20

25

5 10 15 20VGS (V)

RDSon(mΩ)

Fig. 6. Drain-source on-state resistance as a functionof gate-source voltage; typical values

03aa35

VGS (V)0 642

10- 4

10- 5

10- 2

10- 3

10- 1

ID(A)

10- 6

min typ max

Fig. 7. Sub-threshold drain current as a function ofgate-source voltage

03nl14

0

10

20

30

40

50

0 20 40 60ID (A)

gfs(S)

Fig. 8. Forward transconductance as a function ofdrain current; typical values





003aal161

0 1 2 3 4 5 60

10

20

30

40

50

VGS (V)

IDID(A)(A)

Tj = 25°CTj = 25°C175°C175°C

Fig. 9. Transfer characteristics; drain current as afunction of gate-source voltage; typical values

03no98

0

1

2

3

4

5

- 60 10 80 150 220Tj (°C)

VGS(th)(V)

max

typ

min

Fig. 10. Gate-source threshold voltage as a function ofjunction temperature

03nl18

0

10

20

30

0 50 100 150 200 250ID (A)

RDSon(mΩ)

Label is VGS (V)

2010876.56

Fig. 11. Drain-source on-state resistance as a functionof drain current; typical values

003aal163

-60 -20 20 60 100 140 1800

0.4

0.8

1.2

1.6

2

2.4

Tj (°C)

aa

Fig. 12. Normalized drain-source on-state resistancefactor as a function of junction temperature





03nl13

0

2

4

6

8

10

0 10 20 30 40 50QG (nC)

VGS(V)

VDD = 14 V

VDD = 60 V

Fig. 13. Gate-source voltage as a function of gatecharge; typical values

03nl19

0

1000

2000

3000

10- 1 1 10 102VDS (V)

C(pF)

Ciss

Coss

Crss

Fig. 14. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues

003aal162

0 0.2 0.4 0.6 0.8 1 1.20

20

40

60

80

100

VSD (V)

ISIS(A)(A)

Tj = 25°CTj = 25°C175°C175°C

Fig. 15. Source current as a function of source-drain voltage; typical values





11. Package outline

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATEIEC JEDEC JEITA

SOT428 SC-63TO-252

SOT428

06-02-1406-03-16

DIMENSIONS (mm are the original dimensions)

Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)

A

2

1 3

E1

D2

D1HD

LL1

L2

e1

e

mountingbase

w AMb

E

b2

b1 c

A1

y

0 5 10 mm

scale

UNIT

mm 0.930.465.465.00

0.560.20

6.225.98

6.736.47

10.49.6

2.952.55

A1

2.382.22

A b2

1.10.9

b1 e1

0.890.71

b c D1

0.90.5

L2E e

2.285 4.574.0

D2min

4.45

E1min

0.5

L1minHD L w

0.2

ymax

0.2

A

Fig. 16. Package outline DPAK (SOT428)





12. Legal information

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Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

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Product[short] datasheet

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13. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................29 Thermal characteristics .........................................410 Characteristics .......................................................511 Package outline ..................................................... 912 Legal information .................................................1012.1 Data sheet status ............................................... 1012.2 Definitions ...........................................................1012.3 Disclaimers .........................................................1012.4 Trademarks ........................................................ 11

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 18 July 2013

1. General description2. Features and benefits3. Applications4. Quick reference data5. Pinning information6. Ordering information7. Marking8. Limiting values9. Thermal characteristics10. Characteristics11. Package outline12. Legal information