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1998 technology of materials, lasers, semiconductors, superconductors technology of materials, lasers, semiconductors, superconductors V 1500 33 - 305 Oxidation and Reduction of Liquid SnPb (60/40) under Ambient and Vacuum Conditions. The prevention of oxidation in fluxless solder bonding is investigated. The growth of oxide films on metallic SnPb above the eutectic temp. is significantly reduced by decreasing the O 2 partial pressure to 10 -5 Pa. The native oxide consists of SnO 2 having an amorphous structure, whereas the oxide grown at 200 and 250 C is crystalline SnO. The effectiveness of H 2 to reduce SnO 2 at typical soldering parameters (240 C, ¡ 2 min) is furthermore proved by in situ Auger electron spectroscopy. — (KUHMANN, J. F.; MALY, K.; PREUSS, A.; ADOLPHI, B.; DRESCHER, K.; WIRTH, T.; OESTERLE, W.; FANCIULLI, M.; WEYER, G.; J. Electrochem. Soc. 145 (1998) 6, 2138-2142; Mikroelektron. Cent., Tech. Univ. Den., DK-2400 Lyngby, Den.; EN) 1

ChemInform Abstract: Oxidation and Reduction of Liquid SnPb (60/40) under Ambient and Vacuum Conditions

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1998 technology of materials, lasers, semiconductors, superconductors

technology of materials, lasers, semiconductors, superconductorsV 1500

33 - 305Oxidation and Reduction of Liquid SnPb (60/40) under Ambient andVacuum Conditions. — The prevention of oxidation in fluxless solderbonding is investigated. The growth of oxide films on metallic SnPb above theeutectic temp. is significantly reduced by decreasing the O2 partial pressure to≈10−5 Pa. The native oxide consists of SnO2 having an amorphous structure,whereas the oxide grown at 200 and 250 ◦C is crystalline SnO. The effectivenessof H2 to reduce SnO2 at typical soldering parameters (240 ◦C, ¡ 2 min) isfurthermore proved by in situ Auger electron spectroscopy. — (KUHMANN,J. F.; MALY, K.; PREUSS, A.; ADOLPHI, B.; DRESCHER, K.; WIRTH, T.;OESTERLE, W.; FANCIULLI, M.; WEYER, G.; J. Electrochem. Soc. 145(1998) 6, 2138-2142; Mikroelektron. Cent., Tech. Univ. Den., DK-2400 Lyngby,Den.; EN)

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