Comparison of extraction methods to build a radiated ... · Comparison of extraction methods to build a radiated emission model of ICs (ICEM-RE): pros and cons EMC-Europe 2017 workshop

© IRT AESE “Saint Exupéry” - All rights reserved Confidential and proprietary document

Comparison of extraction methods to build

a radiated emission model of ICs (ICEM-RE):

pros and cons

EMC-Europe 2017 workshop

Angers, France

Sébastien Serpaud, Chaimae Ghfiri, Alexandre Boyer, André Durier

[email protected]

September 8, 2017

mailto:[email protected]

• Intro : state of the art about emission modelling of IC

• ICEM-RE modeling approaches:

1. Extraction from ICEM-CE (Combined ICEM model)

2. Direct extraction method from NFS measurements

• Conclusion : Pros & Cons

Agenda

2

• IEC 62433-2 - EMC IC modelling – Part 2: Models of integrated circuits for EMI behavioural

simulation – Conducted emissions modelling (ICEM-CE) - Edition 2.0, January 2017, IEC• 2016 : C. Ghfiri, A. Durier, A. Boyer, S. Ben Dhia, C.Marot “Construction of a Integrated Circuit emission model of a FPGA” APEMC 2016, Shenzhen, China

• 2010 : K.R. Aravind Britto, R. Dhanasekaran, R. Vimala, K. Baskaran; ”EMC analysis of PCB using ICEM model”; 2010 IEEE International Conference on EMC,

Ramanathapuram, India

• 2009 : S. Serpaud, J. L. Levant, Y. Poiré, M. Meyer, S. Tran, "ICEM-CE extraction methodology", EMC Compo 2009, Nov. 17-19, 2009, Toulouse, France

• 2009 : E. Rogard, B. Vrignon, J. Shepherd, E. Sicard, "Characterization and Modelling of Parasitic Emission of a 32-bit Automotive Microcontroller Mounted on 2

Types of BGA", IEEE EMC Symp., Austin, Texas, USA, Aug. 2009.

• 2008 : C Labussiére-Dorgan; S Bendhia; E Sicard; J Tao; H J Quaresma; C Lochot; B Vrignon; “Modeling the Electromagnetic Emission of a Microcontroller Using

a Single Model”; IEEE Transactions on EMC, 2008, Volume: 50

• 2007 : JL Levant, "Mise en place d'une démarche d'intégration des contraintes CEM dans le flot de conception des circuits intégrés", PHD, 2007

• 2006 : T. Steinecke, D. Hesidenz, E. Miersch “EMI modeling and simulation in the IC design process”; EMC-Zurich;17th International Zurich Symposium on EMC

• 2006 : F Lafon, F De Daran; “Analyse de risque au niveau système par l'exploitation du modèle ICEM"; Colloque CEM06, At Saint Malo, France

• 2004 : F Lafon, O Maurice, F De Daran, C Lochot, S Calvet; “Exploitation of the ICEM model in an automotive application” EMC COMPO 2004, Angers, France

• 2004 : M. Ramdani; J.-L. Levant; R. Perdriau “ICEM model extraction: a case study” International Symposium on EMC, 2004

• 2003 : JL Levant; M Ramdani; R Perdriau; “ICEM modelling of microcontroller current activity”; Microelectronics Journal, Vol 35, Issue 6, June 2004, p501-507

• 2003 : C. Lochot ; J.-L. Levant; “ICEM: a new standard for EMC of IC definition and examples” IEEE International Symposium on EMC, 2003

• 2002 : JL Levant; M Ramdani; R Perdriau; “Power- Supply Network Modeling”; 3rd International Workshop on EMC of IC, Nov 2002, Toulouse, France

• IEC-62433-3 - EMC IC modelling – Part 3: Models of integrated circuits for EMI behavioural

simulation – Radiated emissions modelling (ICEM-RE) - Edition 1.0, January 2017, IEC.• 2015 : A Ramanujan, F Lafon, P Fernandez-Lopez; “Radiated Emissions Modelling From Near-Field Data – Toward International Standards”, APEMC 2015, Taipei

– Taiwan

State of the art about IC emission modeling

3

• One block for one specific issue

• Each bloc is build according to a specific

extraction method

• "Matriochkas approach”

• Proven / predicted approach

General structure of model

4

IALoad PDNPCB

ICEM-CEEBEM-CE

@ A Ramanujan, F Lafon, P Fernandez-Lopez; “Radiated Emissions Modelling From Near-Field Data – Toward International Standards”, APEMC 2015, Taipei – Taiwan

ICEM-CE ICEM-RE

• Based on NFS measurements

• Quick modeling process (full automated)

• Usable for far field prediction

• State of the art:

• Two models :

2x workflows (measurement methods)

2x software (model format, license)

2x times / costs

• Proposal: Re-use ICEM-CE to build ICEM-RE

• Only one modeling process

• Combined all advantage of two approaches

• Only one model / simulation tools for both conducted and radiated emission

analyse

• Industrially compatible with costs and delays

State of the art about IC emission modeling

5

@ "Proposal for combined conducted and radiated

emission modelling for Integrated Circuit“, S. Serpaud,

C. Ghfiri, A. Boyer, A. Durier; EMC-Compo 2017

workshop; Russia, Saint-Petersburg; July 6, 2017


• ICEM-RE modeling approaches




Agenda

6

• DUT : Spartan 6 family of Xilinx

Device Under Test presentation

7

X

Y

Area of

measurement

T9 output ball

C16 output ball

T8 input ball

Activity rate

(% LUT used)

Configurations

With periodical switching

of two I/Os at 8 MHz (T9

and C16)

Without IOs

switching

20 % “Config 20% IOon” “Config 20% IOoff”



• ICEM-RE model from ICEM-CE model

• ICEM-CE : ”Methodology of modelling of the internal activity of a FPGA for conducted emission prediction purpose” C. Ghfiri1,2,3, A. Boyer2,3, A.

Durier1, S. Ben Dhia2,3; EMC-Compo2017, Saint Petersburg; Russia

ICEM-RE modelling approach from ICEM-CE

8

Common mode

effect Pkg/PCB

VCC0 VCCint

VSSIO

Package modelCoupling capacitance

between power planes

Parasitic

inductance

between ground

planes

Substrate

coupling

Equivalent die

model

VSSint

Bonding wires

model

DDL

N

i

Cavgdyn Viqi

FP

)().(2 1

_

Cavg

N

i

LL TIiqiQ 1

C

avg

TII .2max

Simplified PDN core model IA core (CLB+CLK+PLL+RAM)

T9

C16

IBIS File

IBIS File

IA IOPDN IO

• ICEM-RE model from ICEM-CE model

• ICEM-CE : ”Methodology of modelling of the internal activity of a FPGA for conducted emission prediction purpose” C. Ghfiri1,2,3, A. Boyer2,3, A.

Durier1, S. Ben Dhia2,3; EMC-Compo2017, Saint Petersburg; Russia

• EAN : Electrical Antenna Network


9

IALoad PDNPCB

ICEM-CEEBEM-CE

ICEM-RE

EAN

ZPDN

i

IA

x

y

• Physical PDN structure of FPGA – from XRAY


Package structure of FPGA from X-Ray

Vccint

Vccaux

GND

Vcc0

TOP Layer Bottom Layer

Top of Die

Top of substrate

Top of FPGA

0.65

Top of PCB

1.151.4

0

Dimension in mm

DieAu Bond Wire Epoxy Overmold

Top

Copper

BT/FR5 coreBottom

Copper

Solder ball

Two-layer plastic BGA 256 (FT256) package

Xray from Continental

• Physical PDN structure of FPGA – from XRAY & from pinout


EAN bloc from Pinout of package

(115 dipoles)

Physical package structure of FPGA from X-Ray

EAN bloc from X-Ray of package

(235 dipoles)

Vccint

Vccaux

GND

Vcc0

• ICEM-RE = EAN + ICEM-CE of FPGA


12

ICEM-CEEAN BlockT9

C16

Simulation done on IC-EMC software (www.ic-emc.org)

• Extraction EAN bloc – C16 IO Activity @8MHz (90%LUT with IO config)


y

x

NFS

measurement

Simulation

EAN extracted

from Pinout


Hx HzHy

Hxmax = -22.7dBµA/m Hzmax = -22.2dBµA/mHymax = -23.3dBµA/m



Simulation

EAN extracted

from Xray

• Extraction EAN bloc – Core Activity @16MHz (90% LUT without IO config)


y

x

NFS

measurement

Simulation

EAN extracted

from Pinout


Simulation

EAN extracted

from Xray

Hx Hy HzHxmax = -31dBµA/m Hymax = -31.5dBµA/m Hzmax = -32.7dBµA/m

Hxmax = -26.1dBµA/m Hymax = -27.5dBµA/m Hzmax = -33.4dBµA/m

No simulation result

(simulation tool limitation)


• ICEM-RE modeling approaches:




Agenda

15

• Direct extraction ICEM-RE from NFS measurement

ICEM-RE extraction method from NFS

measurement

y

x

Core Activity @16MHz (90% LUT without IO config)

NFS

measurement

DipoleHeight

[mm]

|Htan|

[dbA/m]

I(f)

[µA]

I(t)

[mA]Type

0 0.65 -35.9 623 6.1 Core

1 0.65 -37.5 518 5 Core

2 1.15 - 0.65 -36 418 3.1 IO

3 1.15 -31 569 5.5 IO

4 1.15 - 0.65 -35 359 3.5 IO

5 0.65 -38.2 478 4.6 Core

6 0.65 -36.6 575 5.6 Core

DipoleHeight

[mm]

|Htan|

[dbA/m]

I(f)

[µA]

I(t)

[mA]Type

A 0.65 -38 549 4.7 Core

B 1.15 -31.6 531 5.2 Core

C 0.65 -38.5 462 4.5 IO

D 0.65 -39/-41 550 4.7/3.3 IO

E 0.65 -35.2 675.5 6.6/4 IO

a 1.15 - 0.65 -39 226.5 2.2 Core

b 1.15 - 0.65 -32.2 648.4 4.8 Core

c 0.65 -41.8 316 3.1 Core

d 0.65 -39 550 4.7 IO

e 0.65 -39/-41 550 4.7/3.3 Core

Hx Hy Hz

1

2

3

4

5

6

7

a

A B

C

D

b

c

0

d

Ee

Hxmax = -31dBµA/m Hymax = -31.5dBµA/m Hzmax = -32.7dBµA/m

Phase

X

Y

Magnitude

Hx Hy Hz

Simulation of one dipôle

• EAN block Extraction – from NFS Measurement

ICEM-RE extraction approach

EAN bloc from NFS Measurement

(17 dipoles)

Physical package structure of FPGA from X-Ray

• FPGA Activity analyse - 40% without IO

• NFSev on FPGA - Hz component

Analyze of FPGA activities from NFS

measurement

18

14

5

2

3

1

2

T8 IO activity

3

4

5

T8 IO activity

T8 IO activity « filter »

Core activity

Core activity

T8 IO activity « filter »

Core activity « filter »

Core activity « filter »

Localization of picked point:

• Radiated activity (40% without IO configuration)

ICEM- RE extraction method from NFS

measurement

Activity

type

Frequency domain parameters Time domain

parameters|Htang|max

[dBµA/m]

|Af|max*

[mA]

F0

[MHz]

Fc1

[MHz]

Fc2

[MHz]

|At|max

[mA]

T

[ns]

Ton

[ns]

Tr

[ns]

Core90% 98.5 1.7

16 80 80

16.6

62.5 3.2 3.2Core40% 92.8 0.881 8.6

Core20% 89.1 0.575 5.6

Input 87.6 0.484 16 310 550 15.1 62.5 1 0.58

Output 97.8 1.5 8 200 280 61.2 125 1.6 1.15

T8 IO activity

Core activity

* Value compute from equation (2) with h=1.15mm; R=1.825mm

tA.2

log20

1

0

.

..2log20

c

tf

F

FAA

2

0

.

..2log20

c

t

F

FA

r

cT

F.

12

Repetitive Trapezoidal Pulse:

0

Tr Tf

Ton

T

Toff

Tr

on

cT

F.

11

tA

Freq

0

Magnitude

-20dB/decade

-40dB/decade

Magnitude in dB

Core DutyCycle=5.12%

Input DutyCycle=1.6%

Output DutyCycle=1.28%

Top of Die

Top of substrate

Top of FPGA

0.65

Top of PCB

1.151.4

0

Dimension in mm

Center of loop2.5

DieAu Bond Wire Epoxy Overmold

Top

Copper

BT/FR5 coreBottom

Copper

Solder ball

1.35

(3)

R

t

Htan

R

t

Htan

Ground plane

P P

I I

I

h

Image current

h

RandhRtht

Assume

;,

:

(4)

ht

htRRHI

2

2.2 tan

htRR

htIH

2

2

2tan

Radiated Dipole Equation

• Direct extraction ICEM-RE from NFS measurement


measurement

y

x


NFS

measurement

Simulation

Hx Hy Hz

1

2

3

4

5

6

7

a

A B

C

D

b

c

0

d

Ee

Hxmax = -31dBµA/m Hymax = -31.5dBµA/m Hzmax = -32.7dBµA/m

Hxmax = -32.5dBµA/m Hymax = -32.5dBµA/m Hzmax = -32.6dBµA/m


• Direct extraction ICEM-RE from NFS measurement – Hz field component


measurement

21

y

x

Magnitude Measurement Vector Measurement Simulation

Magnitude of Field

Phase of Field



ICEM-RE from ICEM-CE

Conclusion – pros & cons

23

ICEM-RE from NFSe

+ Predictive approach

+ Close to the physical structure

+ Close to the application

+ Available for Far Field prediction

- Expensive cost method (means & time)

- Long time to develop

- Complex model (PDN)

- Limited on the complex device (BGA)

+ Low cost (NFSe measurement only)

+ Quick extraction method

+ Close to the application

+ Available for Far Field prediction

- Based on measurement

- Not predictive approach

- Manual approach ( automate)

- Limited for wide frequency range

ICEM-RE extraction method : Two complementary approaches :

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Thank for your attention

Sébastien Serpaud, Chaimae Ghfiri, Alexandre Boyer,

André Durier

[email protected]

24

mailto:[email protected]

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Comparison of extraction methods to build a radiated ... · Comparison of extraction methods to build a radiated emission model of ICs (ICEM-RE): pros and cons EMC-Europe 2017 workshop