Cremonini Cryogenic Low Noise Components - radionet-eu.org Low... · Medicina Labs Measured 3,2 mm ... GND: GND: GND: GND: GND: GND: GND: GND: GND: GND: GND: GND: ... Cryogenic Low

3° Radionet Engineering Forum Workshop: Cryogenic Low Noise Components - June 19, 2006 Onsala Space Observatory, Gothenburg, Sweden

NATIONAL INSTITUTE for ASTROPHYSICS - RADIOASTRONOMY

I N A F

Cryogenic Low Noise Amplifiers from 4 Ghz up to 100 GHz

A. Cremonini1 , W.Ciccognani2, S. Mariotti1, A.Orfei1, J.Roda1, G.Tofani1

1 INAF – Institute of Radioastronomy- Bologna – Italy2 University “Tor Vergata” – Electronic Eng. Dept. – Rome - Italy



I N A F

Overview

• LNA Realisation process• MMIC design• 22GHZ LNA Characterisation• From 4 to 15 Ghz LNA design and first step measurements• Conclusion



I N A FRealization process

SpecifiesDefinition

Electrical design

Mechanical design

Packaging

Measurement

Goal: Design in order to minimize the steps back.



I N A F

Aims : Custom LNA’sThe “best” for noiseCryogenicHigh performances yield

Key technology : InP 0,1um NGC MMIC Process: 2Wafer runs

Design Tools : Foundry models @ 290K HEMT noise modeled @ 60% Idss for LIBRA IVUnknown Frequency rangeCSIRO Layout Tools based on Foundry manualEM Simulator for complex situations

Design Methodology : Design @ 290K, with separate biasingDesign “As Simple as possible”MMIC topology reviewCross checking design



I N A F

22 GHz InP MMIC

EDA Software provided by the Roma Tor Vergata UniversityEntirely designed and realized by INAFMedicina Labs Measured

3,2 mm

2,25 mm

44 mm



I N A F

Monomaterial Package•Silvar K Carrier and Chip attached with H20E

• Si30/Al70 Carrier and Chip attached with H20E

Amplifier Packaging

Bimaterial Package (main carrier : Brass)• Silvar K Island and Chip attached with H20E

• Si30/Al70 Island and Chip attached with H20E

H20E is a commercial conductive epoxy



I N A F

4245 020 22LNA_05A

Input Return Loss

Better than-16 dB over 50% BW

INSTITUTE OF RADIOASTRONOMY

Spar On Wafer Measurements

18 20 22 24 26Frequency (GHz)

4245 020 LNA_05A S11

-40

-30

-20

-10

0

Measured

Simulated

Packaged

5 15 25 35Frequency (GHz)

4245 020 LNA_05A S21

0

10

20

30

40

Measured

Simulated

Packaged

18 26Frequency (GHz)

4245 020 LNA_05A S22

-30

-20

-10

0

SimulatedPackaged

Measured

Output Return Loss

Better than-16 dB over 50% BW

Gain

(29 ± 0,5 ) dB On the whole BW



I N A F22 GHz InP MMICNoise @ 290 K on chip First order meas. accuracy ± 0.2 dB

Noise source On and Off stage Matcing IMPROVED

Noise source ENR Table Re-characterisation

High accuracy meas. ± 0.06 dB

Noise Performances 4245-020 22LNA_05A

60

100

140

180

220

260

15,5

16,5

17,5

18,5

19,5

20,5

21,5

22,5

23,5

24,5

25,5

26,5

Frequency [GHz]

T e [K

]

050201 Simulated

Noise Performances 4245-020 22LNA_05A

60

100

140

180

220

260

15,5

16,5

17,5

18,5

19,5

20,5

21,5

22,5

23,5

24,5

25,5

26,5

Frequency [GHz]

T e [K

]

050201 050201 High Accuracy Simulated



I N A F

Te Statistical distribution @ 22 GHzmeasured on wafer

100 devices distributed

over 5 wafer

14K spread @ ± 2 σ



I N A F

22 GHz InP MMIC @ 290 K (packaged)



I N A F

22 GHz InP MMIC @ 20 K ( Packaged )



I N A F

X Giornata di Studio Sull’Ingegneria Delle Microonde: SRT, RICERCHE E SVILUPPI DELLA STRUMENTAZIONE: CRYO LNA

Gain FluctuationNegligible gain fluctuations up to 1000 sec integration.



I N A F

Second run LNA specifications

10040015MMIC InP90 - 1156028017MMIC InP70 - 903515527MMIC InP33 - 502513525MMIC InP26 - 402012523MMIC InP26 - 4033535MIC & MMIC4 - 8

Te @ 20 [K] (estimated)

Te @ 290 [K]

Gain [dB] (Typical)

TechnologyFrequencyRange [GHz]



I N A F

Designed By Mecsa for Pharos Project

External Input matching Network

3 stages

3,2 x 2,5 mm

RFIN

VD1

VG2

VD3

RFOUT

VD2

VG3

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10Frequency (GHz)

6LNA_01A Spar

-80-75-70-65-60-55-50-45-40-35-30-25-20-15-10-505

1015202530354045

-40-35-30-25-20-15-10-50510152025303540455055606570758085

4 - 8 GHz InP MMIC LNA

1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10Frequency (GHz)

6LNA_01A Spar

-80-75-70-65-60-55-50-45-40-35-30-25-20-15-10-505

1015202530354045

-40-35-30-25-20-15-10-50510152025303540455055606570758085

1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10Frequency (GHz)

6LNA_01A Spar

-80-75-70-65-60-55-50-45-40-35-30-25-20-15-10-505

1015202530354045

-40-35-30-25-20-15-10-50510152025303540455055606570758085

1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10Frequency (GHz)

6LNA_01A Spar

-80-75-70-65-60-55-50-45-40-35-30-25-20-15-10-505

1015202530354045

-40-35-30-25-20-15-10-50510152025303540455055606570758085

S21

S11

S22

6LNA_01A

0,00

20,00

40,00

60,00

80,00

100,00

120,00

140,00

160,00

180,00

200,00

4 4,5 5 5,5 6 6,5 7 7,5 8

Fre q [GHz]

Te

[K

MMIC Simulation

Off Chip Match Net

MMIC MeasureMMIC SimulationMMIC Measure

Off Chip Match Net



I N A F

3,2 x 2,25 mm

20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50Frequency (GHz)

32LNA_01A Spar

-25-20-15-10-505

101520253035404550556065707580

-65-60-55-50-45-40-35-30-25-20-15-10-50510152025303540

VG 2 VG 4

RFO UT

VD3VD2

VG 3

VD1

VG 1

RFI N

VD4

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

26 - 40 GHz InP MMIC LNA – 1° Version

4 stages snake shapeGain >30 dBIRL < -12 dBORL < -15

S21

S11S22

32LNA_01A

100

110

120

130

140

150

160

170

180

190

200

210

26 27 28 29 30 31 32 33 34 35 36 37 38 39

Freq [GHz]

Te [K

]



I N A F

3,2 x 2,25 mm

RFOUT

VG2

VD3VD1

VD2

VG3

RFIN

VG1

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50Frequency (GHz)

32LNA_02A Spar

-65

-55

-45

-35

-25

-15

-5

5

15

25

35

-30

-20

-10

0

10

20

30

40

50

60

70

26 - 40 GHz InP MMIC LNA 2° Version

3 stagesGain >25 dBIRL < -15 dBORL < -10

S21

S11

S22

32LNA_02A

100,00110,00120,00130,00140,00150,00160,00170,00180,00190,00200,00210,00220,00230,00240,00250,00

26 27 28 29 30 31 32 33 34 35 36 37 38 39

Freq [GHz]

Te [K

]



I N A F

3,2 x 2,25 mm

VG 1

VD3

VG4VG3

VD2

RFI N

VG2

VD1VD4

RFOUT

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:


20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50Frequency (GHz)

43LNA_01A Spar

-30-25-20-15-10

-505

101520253035404550556065707580

-70-65-60-55-50-45-40-35-30-25-20-15-10-50510152025303540


S21

S11

S22

43L NA_01A

100 ,00110 ,00120 ,00130 ,00140 ,00150 ,00160 ,00170 ,00180 ,00190 ,00200 ,00210 ,00220 ,00230 ,00240 ,00250 ,00260 ,00270 ,00280 ,00290 ,00300 ,00310 ,00320 ,00330 ,00340 ,00350 ,00

33 35 37 39 41 43 45 47 49

F req [G Hz]

Te [K



I N A F

3,2 x 2,25 mm

RFO UT

VG 3

VD3

VG1

VD1

VG4

RFI N

VD4

VG2

VD2

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:


70 72 74 76 78 80 82 84 86 88 90 92 94 96 98 100Frequency (GHz)

86LNA_01A Spar

-70-65-60-55-50-45-40-35-30-25-20-15-10

-505

10152025

-35-30-25-20-15-10-5051015202530354045505560


S21

S11

S22

86LNA_01A

100,00

150,00

200,00

250,00

300,00

350,00

400,00

450,00

500,00

550,00

600,00

72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90

Freq [GHz]

Te [K

]



I N A F

2,5 x 2,5 mm

RFI N

VD4

VG 3

VD1 VD3

VG1

VD2

VG2

RFOUT

VG4

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:

GND:


80 82 84 86 88 90 92 94 96 98 100102104106108110112114116118Frequency (GHz)

100LNA_01A Spar

-80-75-70-65-60-55-50-45-40-35-30-25-20-15-10-505

10152025

-30-25-20-15-10-5051015202530354045505560657075

4 stagesGain >10 dB

S21

S11S22

100LNA_01A

100,00

150,00

200,00

250,00

300,00

350,00

400,00

450,00

500,00

550,00

600,00

90 91 92 93 94 95 96 97 98 99 100

Freq [GHz]

Te [K

]



I N A F

2001 10 100Frequency (GHz)

Gain and Noise Temperature

-10

-5

0

5

10

15

20

25

30

35

40[d

B]

0

100

200

300

400

500

600

700

800

900

1000

[K]

Frequency coverage

Te

Gain



I N A F

Conclusion….

LNA’s from 4 to 115 GHz has been designed and measured

Future….

Improve measurement accuracyPerform reverse engineeringValidate Hi freq modelValidate Cryogenic model



I N A F

CSIRO-ATNF for design, measurements support and the opportunity to approach TRW Technology

Tor Vergata University Microwave Group that shared EDA Software and skillness

European partner designers for the intense and synergic collaboration

Acknowledgements

Mecsa Facilities for Hi Accuracy noise Measurements



I N A F

Thanks

Documents

Cremonini Cryogenic Low Noise Components - radionet-eu.org Low... · Medicina Labs Measured 3,2 mm ... GND: GND: GND: GND: GND: GND: GND: GND: GND: GND: GND: GND: ... Cryogenic Low