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S1
Supporting Information
Double-Patterned Sidewall Directed Self-Assembly
and Pattern Transfer of Sub-10 nm PTMSS-b-
PMOST
Julia Cushen, 1* Lei Wan,
1 Gregory Blachut,
2 Michael J. Maher,
3 Thomas R. Albrecht,
1
Christopher J. Ellison, 2 C. Grant Willson,
2, 3 Ricardo Ruiz
1
1HGST, a Western Digital Company 3403 Yerba Buena Rd. San Jose, CA 95135
2The University of Texas at Austin, McKetta Department of Chemical Engineering 200 E Dean
Keeton St. Stop C0400 Austin, TX 78712
3The University of Texas at Austin, Department of Chemistry 105 E. 24th St. Stop A5300,
Austin, TX 78712
S2
The characterization data for the materials studied in this work is summarized in Table S1. The
composition of the top coat used to orient PTMSS-b-PMOST19.9 is reported in a previous study and the
composition of the top coat used to orient PTMSS-b-PMOST17.4 is: 48 mol% maleic anhydride, 35 mol%
3,5-di-tert-butylstyrene, and 17 mol% styrene.
Polymer L0 a Mn,A
b ĐA
c Mn,BCP
b ĐBCP
c
PTMSS-b-PMOST19.9 19.6 14.4 1.01 28.6 1.08
PTMSS-b-PMOST17.4 17.0 9.2 1.03 17.9 1.02
aLamellae periodicity (L0) in nm, determined by primary SAXS peak.
bMn in kDa, determined by GPC.
cDispersity Index Ð, determined by GPC.
Table S1. Properties of the polymers described in this work
The water contact angles of the PS mat guiding line, the oxidized side walls of the guiding line, and
backfill brush are reported in Table S2.
Table S2. Water contact angles of the relevant surface materials in this paper
S3
Figure S1. AFM trace of the chemical contrast pattern with the backfill brush and corresponding height
profile of the guiding line and trench.
Figure S2. Low magnification SEM image of PTMSS-b-PMOST19 terracing with incommensurate film
thickness on sidewall-guiding pattern.
S4
Figure S3. SEM image of PTMSS-b-PMOST when aligned on a guiding pattern with a pitch of 80 nm
and a line width of 40 nm. Guiding lines were patterned perpendicular to the orientation of most of the
BCP domains.
The EELS maps of the individual elements (carbon, oxygen, and silicon) in Figure 3 of the main text are
shown in Figures S3 and S4.
S5
Figure S4. EELS mapping of individual elements in the BCP film stack that corresponds to Figure 3 in
the main text.
Figure S5. EELS mapping of individual elements in partially etched BCP film stack that corresponds to
Figure 3 in the main text.