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Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

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Page 1: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

Electronic properties and the quantum Hall effect in

bilayer graphene

Vladimir Falko

Page 2: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

Geim’s group at ManchesterNovoselov et al - Nature 438, 197 (2005)Novoselov et al - Nature Physics 2, 177 (2006)

Kim-Stormer group at Columbia University NYZhang et al - PRL 94, 176803 (2005)Zhang et al - Nature 438, 201 (2005)

Morpurgo’s group at TU-Delft S-Graphene-S Josephson effect transistor Conference ‘Graphene Week’, MPI-PKS Dresden (2006)

Ultra-thin graphitic films: from flakes to micro-devices

Novoselov et al - Science 306, 666 (2004)

Page 3: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

Monolayer and bilayer graphene

Berry phase, degeneracy of the zero-energy Landau level, and the QHEMcCann, VF - PRL 96, 086805 (2006); Abergel, VF - PR. B 75, 155430 (2007)

Novoselov, McCann, Morozov, VF, Katsnelson, Zeitler, Jiang, Schedin, Geim - Nature Physics 2, 177 (2006)

Relevance of Fermi surface warping and symmetry-breaking defects for weak localisation and WL magnetoresistance in graphene:

monolayer McCann, Kechedzhi, VF, Suzuura, Ando, Altshuler - PRL 97, 146805 (2006)

bilayer Kechedzhi, McCann, VF, Altshuler – PRL 98, 176806 (2007)

NP junctions: focusing, caustics and Veselago lens for electronsCheianov, VF - PR B 74, 041403 (2006)

Cheianov, VF, Altshuler - Science 315, 1252 (2007)

Random resistor network model for the minimal conductivity of graphene with inhomogeneous charge density

Cheianov, VF, Altshuler, Aleiner (2007)

Specifics of Friedel oscillations in monolayer graphene Cheianov, VF – PRL 97, 226801 (2006)

Page 4: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

Berry phase, degeneracy of the zero-energy Landau level, and the QHE in bilayer graphene

McCann, VF - PRL 96, 086805 (2006); Abergel, VF - PR. B 75, 155430 (2007)Novoselov, McCann, Morozov, VF, Katsnelson, Zeitler, Jiang, Schedin, Geim - Nature Physics 2, 177 (2006)

• Tight-binding-model analysis leading to ‘chiral’ electrons characterised by the Berry phase Jπ.

• Landau levels and quantum Hall effect in bilayer graphene.

• Trigonal warping in bilayer graphene.

• FIR magneto-optical properties of bilayer graphene.

Page 5: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

- bonds

hybridisation forms strong directed bonds which determine a honeycomb lattice structure.

2sp

C

Carbon has 4 electrons in the outer s-p shell

)(zp orbitals determine conduction properties of graphite

0

Page 6: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

Wallace, Phys. Rev. 71, 622 (1947)Slonczewski, Weiss, Phys. Rev. 109, 272 (1958)

Page 7: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

0ie 3/2ie

3/2ie

11 p

Page 8: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

ARPES: heavily doped graphene synthesized on silicon carbideA. Bostwick et al – Nature Physics, 3, 36 (2007)

Page 9: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

Bilayer [Bernal (AB) stacking]

Page 10: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

Bilayer [Bernal (AB) stacking]

Closest neighbour intra-layer hops

Page 11: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

yx ipp

Bilayer [Bernal (AB) stacking]

Closest neighbour approximation (questions about the effect of the next-neighbour hops are welcome!)

Page 12: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

ARPES: heavily doped bilayer graphene synthesized on silicon carbideT. Ohta et al – Science 313, 951 (2006)(Rotenberg’s group at Berkeley NL)

McCann, VFPRL 96, 086805

(2006)

Fermi level in undoped bilayer graphene

eV4.01

Page 13: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

yx ipp

McCann, VFPRL 96, 086805

(2006)

emm 05.0~

yx ipp

Page 14: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

)( pn

Berry phase Jπ(for a monolayer π

for a bilayer 2π )

iJi

Jee 32

2

Degree of chirality J

Page 15: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

Monolayer grapheneBilayer graphene

Tight-binding-model analysis:

‘chiral’ electrons and the Berry phase Jπ.

Landau levels and quantum Hall effect in bilayer and monolayer graphene.

Effect of trigonal warping

Infra-red and FIR magneto-optics in graphene.

Page 16: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

2D Landau levels

semiconductor QW / heterostructure

(GaAs/AlGaAs)

xy ( ) )2

h

ge

-1

-2 -1-3

2 31

-3

-2

3

1

2

integer QHEin semiconductors

eB

ghn

a

cnmm

pH

)(42 2

12

yxyx

zce

ippipp

lBArotAip

;

,

nnnB

11

0 0

energies / wave functions

)(0 r

1

2

Page 17: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

yxyx

zce

ippipp

lBArotAip

;

,

Landau levels and QHE

Page 18: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

0... 10 JJJ

00

,...,0

10

J

2D Landau levels of chiral electrons

J=1 monolayerJ=2 bilayer

A

B

B

A

J

J

J

J

~

~

0

0

0

0

valleyindex

also, two-fold real spin degeneracy

4J-degenerate zero-energy Landau level

Page 19: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

McClure, Phys. Rev. 104, 666 (1956)

Haldane, Phys.Rev.Lett. 61, 2015 (1988)

Zheng and Ando Phys. Rev. B 65, 245420 (2002)

McCann and VFPhys. Rev. Lett. 96, 086805 (2006)

4J-degenerate zero-energy Landau level for electrons with degree of chirality J

emm 05.0~

Page 20: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko
Page 21: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

-2-4 40

n (1012 cm-2)

2

2

4

6

0

xx

(k

)

-2-4 40

n (1012 cm-2)

2

2

4

6

0

xx

(k

)

1L graphene 2L graphene

db

EE

pp

xy

(4e2

/h)

1

2

-1

-2

-4

0

-3

4 c

3 x

y (4e2

/h)

1

2

-1

-2

-4

0

-3

4 a3

Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene

K.Novoselov, E.McCann, S.Morozov, V.Fal’ko, M.Katsnelson, U.Zeitler, D.Jiang, F.Schedin, A.Geim Nature Physics 2, 177 (2006)

Page 22: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

1

How robust is the degeneracy of Landau level in bilayer graphene?

010

3

Direct inter-layer A hops (warping term, Lifshitz trans.)

B~

10 McCann, VF - PRL 96, 086805 (2006)

Page 23: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

Monolayer grapheneBilayer graphene

Tight-binding-model analysis:

‘chiral’ electrons and the Berry phase Jπ.

Landau levels and quantum Hall effect in bilayer and monolayer graphene.

Effect of trigonal warping

Infra-red and FIR magneto-optics in graphene.

Page 24: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

1

Hops between A and via B~

BA~

Direct inter-layer hops between A and ,~B 1.0~3

v

v

3

Page 25: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

Inter-layer asymmetry (electric field across the structure, effect of a substrate/overlayer)

‘trigonal warping’ term

31 ~ mvpB

strong magnetic field

31 ~ mvpB

weak magnetic field

212104~ cm

KK

211

4

210~2 22

13 cmNvv

vL

21110~ cmNN L

*8NNNL

Lifshitz transition

iyx peipp

Page 26: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

8-fold degeneratezero-energy Landau level

Page 27: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko
Page 28: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

1

How robust is the degeneracy of Landau level in bilayer graphene?

010

3

Direct inter-layer A hops (warping term, Lifshitz trans.)

B~

10

Distant intra-layer AA,BB hops )3(210~~ 2

0

41

c || 01

McCann, VF - PRL 96, 086805 (2006)

dEz

Inter-layer asymmetry(substrate, gate)

|| 01

Spontaneous symmetry breaking due to e-e interactions

Page 29: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

T. Ohta et al – Science 313, 951 (‘06)(Rotenberg’s group at Berkeley NL)

Interlayer asymmetry gap in bilayer graphene

McCann, VF - PRL 96, 086805 (2006)

inter-layer asymmetry gap

(controlled usingelectrostatic gate)

Page 30: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

Lifting degeneracy of Landau levels in bilayer graphene

McCann, VF - PRL 96, 086805 (2006)McCann - cond-mat/0608221

0

0

0

0

02

2

p

p

m

longer than next neighbour in-plane AA and

BB hops (weak)

inter-layer asymmetry

(controlled usinggate voltage)

m2

1

310~~ 20

41

Page 31: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

Monolayer grapheneBilayer graphene

Tight-binding-model analysis:

‘chiral’ electrons and the Berry phase Jπ.

Landau levels and quantum Hall effect in bilayer and monolayer graphene.

Effect of trigonal warping

Infra-red and FIR magneto-optics in graphene.

Page 32: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

Abergel, VF - PR. B 75, 155430 (2007)

E

E

E

E

E

E

Infrared absorptions due to inter-LL transitions

σ + , Mz=+1 σ - , Mz=-1

Page 33: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

Electronic Properties of Graphene-Based Nanostructures ICTP Trieste Italy, 25-29 August 2008

ESF Conference Graphene Week ‘08Obergurgl, Austria, XX March or YY April 2008

(if we and ESF agree on dates)

Page 34: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko
Page 35: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko
Page 36: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

KK

pp

tt

Page 37: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

0)(

0

0

02

2

1

vH

0

0

0

)(0

2

132

2

2

v

mH

Berry phase π

‘trigonal warping’valley symmetry of wave vector K is lower

than the hexagonal crystalline symmetry

Berry phase 2π

1

1

A

B

B

A

1

1

~

~

A

B

B

A

KK

pp

yx

yx

ipp

ipp

Page 38: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

''''1 KKKKantisymmKKsymmKK CCCCg

''''2 KKKKantisymmKKsymmKK CCCCg

Weak localisation correction

may be suppressed

by the intervalley scattering

due to atomically

sharp scatterers

or edges

i

can be suppressed

only by decoherence

Berry phase π

killed bytrigonal warping

reflectingthe asymmetry

in each valley

Berry phase 2π

)()( pEpE

KK

pp

Page 39: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

Berry phase π

‘slow’ inter-valley scattering:neither WL nor WAL

magnetoresistance

‘fast’ inter-valley scattering: usual WL magnetoresistance cut at

''''1 KKKKantisymmKKsymmKK CCCCg

''''2 KKKKantisymmKKsymmKK CCCCg

Weak localisation magnetoresistance

i

)0()( RBR

i

iB

B

D

B 0~

ii D

B0~

E. McCann, K.Kechedzhi, V.Fal'ko, B.Altshuler,

in preparation

E. McCann, K.Kechedzhi, V.Fal'ko, H.Suzuura,

T.Ando, B.Altshuler, cond-mat/0604015

Page 40: Electronic properties and the quantum Hall effect in bilayer graphene Vladimir Falko

S.V. Morozov et al, cond-mat/0603826(Manchester group)

Weak localisation magnetoresistance