Emerging Applications for GaN Transistorsepc-co.com/epc/Portals/0/epc/documents/presentations...EPC - The Leader in The Leader in GaN | May, 2013 |eGaN® FETs | May, 2013 | The eGaN®

EPC - The Leader in eGaN® FETs | May, 2013 | www.epc-co.com EPC - The Leader in GaN | May, 2013 | www.epc-co.com

The eGaN® FET Journey Continues

David Reusch Alex Lidow, Johan Strydom, and Michael de Rooij Efficient Power Conversion Corporation

Emerging Applications for GaN Transistors

EPC - The Leader in eGaN® FETs | May, 2013 | www.epc-co.com

Why Gallium Nitride?

2


Key Applications • RF DC-DC “Envelope Tracking” • Wireless Power Transmission • Point of Load Modules • Network and Server Power Supplies • RadHard • Power Over Ethernet • RF Transmission • Solar Micro-inverters • Energy Efficient Lighting • Class D Audio

3


0.1

1

10

100

1 10 100 1000

QG

D (@

½ B

V DSS

) (nC

)

RDS(ON) (mΩ)

Hard Switching Figure of Merit

0.1

1

10

100

1 10 100 1000

QG

D (@

½ B

V DSS

) (nC

)

RDS(ON) (mΩ)


0.1

1

10

100

1 10 100 1000

QG

D (@

½ B

V DSS

) (nC

)

RDS(ON) (mΩ)


100 V Si 100 V EPC

Hard Switching Applications

200 V EPC 200 V Si

40 V EPC 40 V Si

4


VOUT=1.2 V FS=1 MHz L=300 nH T/SR: EPC2015 Driver LM5113

5

Efficiency Comparison

68 70 72 74 76 78 80 82 84 86 88 90 92

2 4 6 8 10 12 14 16 18 20 22

Effic

ienc

y (%

)

Output Current (IOUT)

eGaN FET MOSFET

12 V 24 V


Envelope Tracking (ET)

Ref: Nujira.com website

Same average

Normalized to same peak

6


Output Power (dBm)

Average Power

Output Probability

Envelope Tracking

7

Fixed supply

Peak Power

PAPR = 0dB Peak efficiency

up to 65%

Envelope Tracking (ET)


3

30

300

1 10 100 1000

QO

SS (@

½ B

V DSS

) + Q

G (

nC )

RDS(ON) (mΩ)

Soft Switching Figure of Merit

3

30

300

1 10 100 1000

QO

SS (@

½ B

V DSS

) + Q

G (

nC )

RDS(ON) (mΩ)


3

30

300

1 10 100 1000

QO

SS (@

½ B

V DSS

) + Q

G (

nC )

RDS(ON) (mΩ)


100 V Si 100 V EPC

Soft Switching Applications

200 V EPC 200 V Si

40 V EPC 40 V Si

8


Ref: Y. Ren, M. Xu, J. Sun, and F. C. Lee, “A family of high power density unregulated bus converters,” IEEE Trans. Power Electron., vol. 20, no. 5, pp. 1045–1054, Sep. 2005.

VGS(Q1,Q3) VGS(SR1)

VGS(Q2,Q4) VGS(SR2)

ILK1

ILK2

4:1

48V

12V

SR1

SR2

High Frequency DC/DC Transformer

Resonant Bus Converter

9


MOSFET VGS

MOSFET VDS

eGaN FET VDS

eGaN FET VGS

DMOSFET = 34% DeGaN FET = 42%

FS = 1.2 MHz, VIN = 48 V, and VOUT ≈ 12 V

Duty Cycle Comparison

10


90

91

92

93

94

95

96

97

98

0 5 10 15 20 25 30 35 40

Effic

ienc

y (%

)


1.2 MHz MOSFET

1.2 MHz eGaN FET

10 W 12 W

14 W

2 4 6 8

10 12 14 16 18 20 22 24

0 5 10 15 20 25 30 35 40

Pow

er L

oss

(W)


1.2 MHz eGaN FET

1.2 MHz MOSFET

FS = 1.2 MHz, VIN = 48 V, and VOUT ≈ 12 V


11


Wireless Power

PSU

Gate Driver

Gate Driver

Feedback and Basic Control

PSU Matching

Impedance Network

+

24VDC

Source Unit

Resonant Source

Device Unit

Capture Device

Load

Un-Regulated DC output

Matching Impedance

Network

WiTricity Coils

12



54

56

58

60

62

64

66

68

70

72

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Efficiency [%]

Output Power [W]

6.639 MHz, 23.6 Ω load

Vin =8V Vout=6.8V

Vin =22V Vout=18.3V

13


•eGaN FETs improve high frequency performance in both hard and soft switching applications

• Lower specific on resistance • Lower switching charge

• Lower output charge • Lower gate charge

Thank you for your time! Questions?

Summary

14

EPC - The Leader in eGaN® FETs | May, 2013 | www.epc-co.com EPC - The Leader in GaN | May, 2013 | www.epc-co.com

The end of the road for silicon…..

is the beginning of

the eGaN FET journey!

Documents

Emerging Applications for GaN Transistorsepc-co.com/epc/Portals/0/epc/documents/presentations...EPC - The Leader in The Leader in GaN | May, 2013 |eGaN® FETs | May, 2013 | The eGaN®