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Quality is our message Quality is our message Quality is our message Quality is our message Nov.-18-’03 Fuji Fuji High Power IGBT Module High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology Co., Ltd.

Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

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Page 1: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

Quality is our messageQuality is our messageQuality is our messageQuality is our message

Nov.-18-’03

Fuji High Power IGBT Module

Fuji Fuji High Power IGBT ModuleHigh Power IGBT Module

Industrial Application Div.Semiconductors Group

Fuji Electric Device Technology Co., Ltd.

Page 2: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

Quality is our messageQuality is our messageQuality is our messageQuality is our message

Nov.-18-’03

Quality is our messageQuality is our messageQuality is our messageQuality is our messageFuji High Power IGBT Modules

1in1 PKG type: M143

1in1 PKG type: M142

2in1 PKG type: M248

6in1 PKG type: EconoPack-Plus

Page 3: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

Quality is our messageQuality is our messageQuality is our messageQuality is our message

Nov.-18-’03

1. High voltage and high current line-up

2. Low on-state voltage

3. Fast switching and low loss characteristics

4. Low inductance package design

5. Easy Parallel connection

Features

Page 4: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

Quality is our messageQuality is our messageQuality is our messageQuality is our message

Nov.-18-’03

1. High voltage and high current line-up

2. Low on-state voltage VCE(sat)=2.0V, VF=1.65V @1in1, 2in1(1in1 1200V-1200A device, rating current, 125℃℃℃℃, typical value)

1in1 : 1200V,1700V / 1200A,1600A,2400A,3600A

2in1 : 1700V / 600A,800A,1200A

6in1: 1200V,1700V/ (150A),225A,300A,450A

VCE(sat)

0

500

1000

1500

2000

2500

0 1 2 3

VCE(sat) (V)

Ic

(A

)

RT

125℃

VF

0

500

1000

1500

2000

2500

0 0.5 1 1.5 2 2.5

VCE(sat) (V)

Ic

(A

)

RT

125℃

Page 5: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

Quality is our messageQuality is our messageQuality is our messageQuality is our message

Nov.-18-’03

3. Fast switching and low loss characteristics

4. Low inductance package designMain terminal inductance(between collector and emitter) : 12nH 1in1 M142 PKG.

Turn-on wave form Turn-off wave formTest conditions : Tj=125℃℃℃℃, Vcc=600V,RG=0.8ohm, VGE=+/-15V,Ls≒≒≒≒65nH

(time:500ns/div, VGE:20V/div, VCE:200V/div, Ic:400A/div) (time:500ns/div, VGE:20V/div, VCE:200V/div, Ic:400A/div)

(1in1 1200V-1200A device) (1in1 1200V-1200A device)

Page 6: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

Quality is our messageQuality is our messageQuality is our messageQuality is our message

Nov.-18-’03

1200V 5th Gen.(U-series) Losses comparison

2MBI300S-120

2MBI300UD-120

BSM300GM120DLC

Presumption

2MBI300S-120

2MBI300UD-120

BSM300GM120DLC

Presumption

2MBI300S-120

2MBI300UD-120

BSM300GM120DLC

Presumption

f=1kHz f=5kHz f=15kHz

Tota

l los

ses(

W)

Ed=600V,Iout=135Armscosθ=0.85,λ=1,Tj=125℃

138W100% 111W

80% 108W78%

207W100% 199W

96%181W87%

297W100%

310W104% 274W

92%

0

50

100

150

200

250

300

350

Psat

Psw

PF

Prr

Page 7: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

Quality is our messageQuality is our messageQuality is our messageQuality is our message

Nov.-18-’03

(1) Narrower distribution of characteristics(2) Positive temperature coefficient of on-voltage(3) Less temperature dependence of switching loss

Features of FS-IGBT chip technologyFeatures of FS-IGBT chip technology

Easy to connect in parallel

Page 8: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

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Nov.-18-’03

Comparison of 1200V IGBT chipsComparison of 1200V IGBT chipsComparison of 1200V IGBT chipsComparison of 1200V IGBT chips

N-IGBTN-IGBTN-IGBTN-IGBT U-IGBTU-IGBTU-IGBTU-IGBT

Type of IGBTType of IGBTType of IGBTType of IGBT Punch Through TypePunch Through TypePunch Through TypePunch Through Type Fie ld-Stop TypeFie ld-Stop TypeFie ld-Stop TypeFie ld-Stop Type

Gate StructureGate StructureGate StructureGate Structure Planner GatePlanner GatePlanner GatePlanner Gate Trench GateTrench GateTrench GateTrench Gate

WaferWaferWaferWafer Epitaxial WaferEpitaxial WaferEpitaxial WaferEpitaxial Wafer Floating Zone(FZ) WaferFloating Zone(FZ) WaferFloating Zone(FZ) WaferFloating Zone(FZ) Wafer

ThicknessThicknessThicknessThickness 350 micrometers350 micrometers350 micrometers350 micrometers 130 micrometers130 micrometers130 micrometers130 micrometers

Lifetime ControlLifetime ControlLifetime ControlLifetime Control Electron IrradiationElectron IrradiationElectron IrradiationElectron Irradiation not needednot needednot needednot needed

Page 9: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

Quality is our messageQuality is our messageQuality is our messageQuality is our message

Nov.-18-’03

p

C

n-

G E

p + sub.

C

G E

n+ buffer

n-

n+ n+p

N-series

S-series

NPT-Structure

G E

FS    Trench-Structure

n-

C

U-series

Progress of Fuji’s 1200/1700V IGBT chip design structure

Quality is our messageQuality is our messageQuality is our messageQuality is our message

1200V : Jan. ‘95

1200V : Mar. ‘98 1200V : 2002 1700V : 2002

Jul.-30-’03

Page 10: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

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Nov.-18-’03

MBT100N-120

0

5

10

15

20

25 n=84

2.00-2.10

2.10-2.20

2.20-2.30

2.30-2.40

2.40-2.50

2.50-2.60

2.60-2.70

2.70-2.80

2.80-2.90

2.90-3.00

3.00-3.10

3.10-3.20

3.20-3.30

Ave. 2.774Vσ= 0.141

MBT150U-120

Comparison of Vce(sat)distribution

Page 11: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

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Nov.-18-’03

Comparison of current imbalance between U-series and N-series

Von1<Von2ΔVon=Von2 - Von1Ic(ave.)=(Ic1+Ic2)/2α=(Ic 1/Ic(ave.) - 1)×100

Von1 Von2

Ic1 Ic2

0.0 0.1 0.2 0.3 0.4 0.5 0.60

10

20

30

40

1200V IGBT

Improvement of current imbalance proportion

U-series

N-series

ΔVCE(sat) [V] (at 25C) [= Von2-Von1]

Current imba

lance propor

tion :α [%

] (at 125C)

Page 12: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

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Nov.-18-’03

Maximum current in parallel connection IGBTs

+

−+=

1001

1001

)1(1(max) α

α

nII CC

1001)(

1 ×

−=

aveC

C

IIα

For example n=4 , α=10%, Ic(max)=600A

 ΣIC= 2072A , Ic(ave)=518A

The worst case conditions where the entire current is concentrated into one module.

Page 13: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

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Nov.-18-’03

Quality is our messageQuality is our messageQuality is our messageQuality is our message

Tentative1in1 Package out lineM142

M143

Page 14: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

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Nov.-18-’03

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1in1 Electrical and thermal characteristics Tentative

Electrical propertiesCollector emitter voltage

Collector current TC= 80℃ 1200A 1600A 2400A 3600A 1200A 1600A 2400A 3600A

housing 140* 130 140* 130 140* 190 140*190 140* 130 140* 130 140* 190 140*190

M142 M142 M143 M143 M142 M142 M143 M143

Peak collector current 2400A 3200A 4800A 7200A 2400A 3200A 4800A 7200A

Vcesat VGE= 15V Tj= 25℃ 1.7V typ 1.7V typ 1.7V typ 1.7V typ 2.0V typ 2.0V typ 2.0V typ 2.0V typ

VGE= 15V Tj= 125℃ 2V typ 2V typ 2V typ 2V typ 2.4V typ 2.4V typ 2.4V typ 2.4V typ

VF- diode (chip) Tj= 125℃ 2.2V typ 2.2V typ 2.2V typ 2.2V typ 2.0V typ 2.0V typ 2.0V typ 2.0V typ

Gate threshold voltage Tj= 25℃ 6.2V typ 6.2V typ 6.2V typ 6.2V typ 7.5V typ 7.5V typ 7.5V typ 7.5V typ

Stray inductance module 12nH 12nH 10nH 10nH 12nH 12nH 10nH 10nH

Stray inductance between 3- 3.5nH 3- 3.5nH 2.5- 3nH 2.5- 3nH 3- 3.5nH 3- 3.5nH 2.5- 3nH 2.5- 3nHSense and main emitter

Thermal propertiesTransistor RthJC Max. values 0.022K/W 0.016 0.0125 0.0084 ≒0.022 ≒0.016 ≒0.0125 ≒0.0084

Diode RthJC Max. values 0.04K/W 0.032 0.021 0.014 ≒0.04 ≒0.032 ≒0.021 ≒0.014

Max junction temperature Max. values 150℃ 150℃ 150℃ 150℃ 150℃ 150℃ 150℃ 150℃Operation temperature Max. values 125℃ 125℃ 125℃ 125℃ 125℃ 125℃ 125℃ 125℃

1200V 1700V

Page 15: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

Quality is our messageQuality is our messageQuality is our messageQuality is our message

Nov.-18-’03

Quality is our messageQuality is our messageQuality is our messageQuality is our message

Tentative2in1 Package out lineM248

Page 16: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

Quality is our messageQuality is our messageQuality is our messageQuality is our message

Nov.-18-’03

Quality is our messageQuality is our messageQuality is our messageQuality is our message

2in1 Electrical and thermal characteristics Tentative

Electrical propertiesCollector emitter voltage Collector current TC= 80℃ 600A 800A 1200APeak collector current 1200A 1600A 2400AVcesat VGE= 15V Tj= 25℃ 2.0V typ 2.0V typ 2.0V typ

VGE= 15V Tj= 125℃ 2.4V typ 2.4V typ 2.4V typVF- diode Tj= 125℃ 2.0V typ 2.0V typ 2.0V typGate threshold voltage Tj= 25℃ 7.5V typ 7.5V typ 7.5V typ Stray inductance module 12nH 12nH 12nH Stray inductance between 3- 3.5nH 3- 3.5nH 3- 3.5nH Sense and main emitter

Thermal propertiesTransistor RthJC / arm Max. values 0.044K/W 0.032K/W 0.025K/W

Diode RthJC / arm Max. values 0.08K/W 0.064K/W 0.042K/W

Max junction temperature Max. values 150℃ 150℃ 150℃Operation temperature Max. values 125℃ 125℃ 125℃

1700V

Page 17: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

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Nov.-18-’03

Quality is our messageQuality is our messageQuality is our messageQuality is our message

Development road map of UDevelopment road map of U--series IGBT modulesseries IGBT modules

Oct.-17-’03

Road map of U-series IGBT modulesRoad map of U-series IGBT modulesRoad map of U-series IGBT modulesRoad map of U-series IGBT modules

2003/ 2004/Jan. Feb. Mar. Apr. May Jun. Jul. Aug. Sep. Oct. Nov. Dec. Jan. Feb. Mar.

600V Small Pack

PIM (EP)

7in1

( 6in1 )

2in1

1200V Small Pack

PIM (EP)

6in1

2in1

1in1(HM)

1700V 6in1

2in1(HM)

1in1(HM)

Econo Plus (225~450A)

2in1(75A~450A)

Econo PIM (25~75A)

1in1(1200A~3600A)

Econo Plus (150~450A)

2in1(600A~1200A)

1in1(1200A~3600A)

Small Pack (8~50A)

Econo PIM (30~100A)

PC-Pack (50~150A)

Econo Plus (300~400A)

2in1(150~600A)

7in1 (75~150A)

Small Pack (10~15A)

Page 18: Fuji High Power IGBT Module - scut-co.com · Fuji High Power IGBT Module Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology

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1in1 2in1 Engineering sample shipment schedule

9999 10101010 11111111 12121212 1111 2222 3333 4444 5555 6666 7777 8888

ESESESES (Engineering Sample) (Engineering Sample) (Engineering Sample) (Engineering Sample) ●1200A/1200V  PKG.type:M142

●1600A/1200V  PKG.type:M142

1 in11 in11 in11 in1 ●2400A/1200V  PKG.type:M143

●3600A/1200V  PKG.type:M143

●1200A/1700V  PKG.type:M142

●1600A/1700V  PKG.type:M142

●2400A/1700V  PKG.type:M143

●3600A/1700V  PKG.type:M143

ESESESES (Engineering Sample) (Engineering Sample) (Engineering Sample) (Engineering Sample) ●1200A/1700V  PKG.type:M248

●600A/1700V  PKG.type:M248

2in12in12in12in1●800A/1700V  PKG.type:M248

SampleSampleSampleSample2003200320032003 2004200420042004