H.-G. MoserMax-Planck-Institut

für Physik

MPI Semiconductor Laboratory(Halbleiterlabor: HLL)

Common project of the:

Max-Planck-Institut fuer Physik (Werner Heisenberg Institut), Munich

Max-Planck-Institut fuer extraterrestrische Physik, Garching

Founded in 1992, since 2000 located in the Siemens plant in Neu-Perlach,Munich

1

H.-G. MoserMax-Planck-Institut

für Physik

HLL Facilities

800m² cleanroomClass 16“ production line

Thermal oxidationPhotolithography (double sided, mask and laser writer)Wet chemical ethingIon implantationLTONitridePolysiliconAl-sputtering

H.-G. MoserMax-Planck-Institut

für Physik

3

Sensor Thinning

?

Process backsidee.g. structured implant

sensor wafer

handle wafer

1. implant backsideon sensor wafer

2. bond sensor waferto handle wafer

3. thin sensor sideto desired thickness

4. process DEPFETson top side

5. structure resist,etch backside upto oxide/implant

Industry: TraciT, GrenobleHLL HLL main lab HLL special lab

sensor wafer

handle wafer

1. implant backsideon sensor wafer

2. bond sensor waferto handle wafer

3. thin sensor sideto desired thickness

4. process DEPFETson top side

5. structure resist,etch backside upto oxide/implant

Industry: TraciT, GrenobleHLL HLL main lab HLL special lab

sensor wafer

handle wafer

1. implant backsideon sensor wafer

2. bond sensor waferto handle wafer

3. thin sensor sideto desired thickness

4. process DEPFETson top side

5. structure resist,etch backside upto oxide/implant

Industry: TraciT, GrenobleHLL HLL main lab HLL special lab

sensor wafer

handle wafer

1. implant backsideon sensor wafer

2. bond sensor waferto handle wafer

3. thin sensor sideto desired thickness

4. process DEPFETson top side

5. structure resist,etch backside upto oxide/implant

Industry: TraciT, GrenobleHLL HLL main lab HLL special lab

sensor wafer

handle wafer

1. implant backsideon sensor wafer

2. bond sensor waferto handle wafer

3. thin sensor sideto desired thickness

4. process DEPFETson top side

5. structure resist,etch backside upto oxide/implant

Industry: TraciT, GrenobleHLL HLL main lab HLL special lab

sensor wafer

handle wafer

1. implant backsideon sensor wafer

2. bond sensor waferto handle wafer

3. thin sensor sideto desired thickness

4. process DEPFETson top side

5. structure resist,etch backside upto oxide/implant

Industry: TraciT, GrenobleHLL HLL main lab HLL special lab

sensor wafer

handle wafer

1. implant backsideon sensor wafer

2. bond sensor waferto handle wafer

3. thin sensor sideto desired thickness

4. process DEPFETson top side

5. structure resist,etch backside upto oxide/implant

Industry: TraciT, GrenobleHLL HLL main lab HLL special lab

sensor wafer

handle wafer

1. implant backsideon sensor wafer

2. bond sensor waferto handle wafer

3. thin sensor sideto desired thickness

4. process DEPFETson top side

5. structure resist,etch backside upto oxide/implant

Industry: TraciT, GrenobleHLL HLL main lab HLL special lab

sensor wafer

handle wafer

1. implant backsideon sensor wafer

2. bond sensor waferto handle wafer

3. thin sensor sideto desired thickness

4. process DEPFETson top side

5. structure resist,etch backside upto oxide/implant

Industry: TraciT, GrenobleHLL HLL main lab HLL special lab

sensor wafer

handle wafer

1. implant backsideon sensor wafer

2. bond sensor waferto handle wafer

3. thin sensor sideto desired thickness

4. process DEPFETson top side

5. structure resist,etch backside upto oxide/implant

Industry: TraciT, GrenobleHLL HLL main lab HLL special lab

Wafer bondingSOI process

Thinning of top wafer (CMP)

Processing etching of handle wafer (structured)

diodes and large mechanical samples Belle II module

Need thin (50µm-75µm) self supporting all silicon module

H.-G. MoserMax-Planck-Institut

für Physik

4

MPI 3D R&D Program

Build demonstrator using ATLAS pixel chip (FE-I2/3) and thin pixel sensors made by MPI (complete wafers with FEI2, FEI3 chips available!)

Interconnection with SLID and ICV technology by Fraunhofer IZM

Demonstration of postprocessing of standard ASICs with via last

More by Anna Macchiolo

test sensors (strip, pixel)on 75mm and 150µm SOI wafer

H.-G. MoserMax-Planck-Institut

für Physik

5

Sensors

In house production onFZ-SOI material (2 kcm)

Detector wafer thickness75 µm and 150 µm

p- and n-type materialp-spray insulation

Udep 20V and 80V(before irradiation)

~ 100% CCE at 1016 n/cm²

75 µm

H.-G. MoserMax-Planck-Institut

für Physik

Bump Bonding Preparation

6

Preparation for bump bonding: UBM (under bump metal)

FlexDCD/DHP

Switcher

H.-G. MoserMax-Planck-Institut

für Physik

1st Cu/Sn Wafer at the HLL

7

Belle II TDR review

November 2010

H.-G. MoserMax-Planck-Institut

für Physik

Summary

The MPI semiconductor laboratory offers worldwide unique possiblities to develop and produce novel types of silicon detectors

Complementary to industrial production:

High purity material (full depletion)Double sided processingLarge area devices (wafer size)

For AIDA: thin pixel sensors with UBM (copper on Ti/W)

8