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Einführung in die Röntgendiffraktometrie von dünnen epitaktischen Halbleiter-Schichten. Aus: Proceedings “Herbstschule Röntgenoptik“ (ed. H.-R. Höche), pp. 69-119. Günthersberge/Harz (Germany), 27-30 Sept. 1993. This contribution is intended to give an introduction to High-Resolution X-Ray Diffraction (HRXRD). Furthermore, it shall be demonstrated how HRXRD can be applied fo the investigation of epitaxial structures and which information can be obtained from these measurements. We shall concentrate on III-V- and IV-IV-compound semiconductors. The methods and the results to be presented may easily be applied to other material systems.
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An Introduction to High-Resolution X-Ray Diffractometry
Dr. Manfred Schuster
Siemens AG, Corporate Research and Development, Dept. ZFE BT MR 32,
Otto-Hahn-Ring 6, D-81739 Munich, Germany
Dr. Nikolaus Herres
Fraunhofer-Institut für Angewandte Festkörperphysik,
Tullastr. 72, D-79108 Freiburg, Germany
In: Proceedings “Herbstschule Röntgenoptik“ (ed. H.-R. Höche), pp. 69-119.
Günthersberge/Harz (Germany), 27-30 Sept. 1993.