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1 / 22 LPDDR4: Evolution for new Mobile World 2013.08.06 JungYong(JY) Choi Senior Manager Samsung Semiconductor Inc.

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Page 1: LPDDR4: Evolution for new Mobile World - MemCon€¦ · 1 / 22 LPDDR4: Evolution for new Mobile World 2013.08.06 JungYong(JY) Choi Senior Manager Samsung Semiconductor Inc

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LPDDR4: Evolution for new Mobile World

2013.08.06

JungYong(JY) Choi

Senior Manager

Samsung Semiconductor Inc.

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Legal Disclaimer

This presentation is intended to provide information concerning memory industry trends. We do our best to make sure that information presented is accurate and fully up-to-date. However, the presentation may be subject to technical inaccuracies, information that is not up-to-date or typographical errors. As a consequence, Samsung does not in any way guarantee the accuracy or completeness of information provided on this presentation. Samsung reserves the right to make improvements, corrections and/or changes to this presentation at any time.

The information in this presentation or accompanying oral statements may include forward-looking statements. These forward-looking statements include all matters that are not historical facts, statements regarding the Samsung Electronics' intentions, beliefs or current expectations concerning, among other things, market prospects, growth, strategies, and the industry in which Samsung operates. By their nature, forward-looking statements involve risks and uncertainties, because they relate to events and depend on circumstances that may or may not occur in the future. Samsung cautions you that forward looking statements are not guarantees of future performance and that the actual developments of Samsung, the market, or industry in which Samsung operates may differ materially from those made or suggested by the forward-looking statements contained in this presentation or in the accompanying oral statements. In addition, even if the information contained herein or the oral statements are shown to be accurate, those developments may not be indicative developments in future periods.

© Samsung

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Contents

1. Mobile Industry trends

2. LPDDR4 features and benefits

3. LPDDR4 positioning

4. LPDDR4 schedule

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Post-PC Market Dynamics

W/W Smartphone + Tablet Installed Base > PC in Q2’13

36% of Email is Now Opened on a Mobile Device

Source: KPCG Internet Trends © Samsung

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Where Will Users Spend their Time?

Average Traffic Per Mobile Device Type

Smartphones and Tablets will Soon Drive Similar Data Levels as PCs

2X

7X

4X

8X

Source: Cisco VNI

© Samsung

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What is Driving High Bandwidth - 1

Larger Screen size

Tablet Smartphone

10” 6” 7” 11”

Notebook

© Samsung

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What is Driving High Bandwidth - 2

High Resolution

HD FHD QXGA WQXGA QSXGA UHD 1280/720 1920/1080 2048/1536 2560/1600 2560x2048 3840x2160

1X

3.4X

5.7X

9X

2.3X

4.5X

© Samsung

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What is Driving High Bandwidth - 3

Advanced Camera functionality

Burst Shot Feature

Panoramic Shot

HDR Augmented Reality

© Samsung

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B/W Requirement is Driven by Graphics

6.4GB/s

12.8GB/s

19.2GB/s

25.6GB/s

32.0GB/s

LPDDR2

LPDDR3

LPDDR3E

LPDDR4

LPDDR4E

2013 2014 2015 2016 2017

WQXGA

Tablet application

Source: Samsung

UD (Ultra Definition)

© Samsung

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What is LPDDR4?

Low Power DDR4 Evolutionary solution - Higher “Pin Bandwidth”

- vs. Wide IO2: Revolutionary solution - Much wider “Pin Width”

© Samsung

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LPDDR4 Key Features

Evolutionary DRAM technology enables 3.2Gbps and faster

Items LPDDR3 LPDDR4 Comments

Speed

CLK 400-800MHz

(~1066MHz w/ LP3E) 800-1600MHz

2X, Pursues higher

speed

CMD/ADDR DDR SDR -

DQ DDR DDR

Band Width 12.8GB/s+ (2ch) 25.6GB/s+ (2ch) 2X

Voltage VDD2/VDDQ/VDD1 1.2/1.2/1.8 1.1/1.1/1.8 Total Pd 10%↓

Architecture

[# o Ch & DQs]/ Die x32 2x16 IDD4 20% ↓

# of Bank/channel 8 8 -

Page Size 4K 2K IDD0 10%↓

BL 8 16 32B/ch

Interface

I/O interface HSUL LVSTL 40% I/O power reduction (vs. POD) DQ ODT

No term (VDDQterm option)

VSSQ Term

CA ODT No term VSS term Optional

Vref External Internal

© Samsung

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Innovative Low Power Interface - LVSTL

LVSTL (Low Voltage Swing Terminated Logic)

• High frequency operation with less IO power consumption

• No DC power consumption when driving “low”

• Lower Cio, small Xtalk and SSN, because of small swing

• Stronger reference plane

• Easy voltage scaling

0

2

4

6

8

10

CTT POD_VDDQ LVSTL_VSSQ

DDR3 DDR4 LPDDR4

(mW/Gbps/pin)

32% 40%

VDDQ

VOH

LPDDR4 LVSTL I/O Power by Interfaces

© Samsung

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LPDDR4 3.2Gbps and Beyond

LPDDR4 LVSTL enables stable 3.2Gbps with 70% UI • Initial SI study result shows prominent 4.3Gbps with 60% UI @ 350mV swing

• Further enhancement by reducing trace length, optimizing channel - SOC/PKG/DRAM and lower Cio

3.2Gbps Data Eye Diagram (ODT=60ohm) 4.3Gbps Data Eye Diagram (ODT=60ohm)

218 140

Over 70% Over 60%

Source : Samsung

© Samsung

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Close Collaboration for Timing Closure

Less than half of UI & Less than 1/3 of Amplitude

• Accurate simulation Board level verification Set level optimization

• Verification/test/FA tools required

LPDDR3-1600Mbps LPDDR3-1866Mbps LPDDR4-3200Mbps

[Real scale]

© Samsung

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Training schemes

I/O signal timings are optimized through training schemes that compensate system variations

© Samsung

Scheme Purpose

CA Training Align CA bus inputs to the CLK center

DQ Read Training Train the DQ outputs

ZQ Calibration Calibrate the Output Driver Strength

Write Leveling Align DQS inputs to the CLK

Write Training (Write/Read DQ FIFO)

Align Data inputs to the DQS

VREF Training Train the VREF level

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Power-efficiency Enhanced Architecture

Core Power reduction by adopting advanced architectures with low power attributes

x16

BL16

x32

BL8

LPDDR4 : Activated Page 2KB(1Kx16)

32Byte

~20% IDD4 reduction ~10% IDD0 reduction

x16

32Byte

LPDDR3 : Activated Page 4KB(1Kx32)

Low Power 32-bit Architecture Access Granularity & Page-size/Ch

© Samsung

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Power Efficiency by DRAM Technology

More than 40% power efficiency improvement by adopting new architecture, new circuitry and low VDD

LP3_1600 LP3_1866 LP3_2133 LP3_4Ch LP4 WIO2

ODT

I/O

Core

12.8GB/s 14.6GB/s 17GB/s 25.6GB/s

DDR4

Source : Samsung

-40%

mW/GB

© Samsung

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Power Saving with Advanced Technology

LPDDR4 consumes less power than LPDDR3 for performing some tasks

Time

Current

Active

Standby

© Samsung

LPDDR3

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Power Saving with Advanced Technology

LPDDR4 consumes less power than LPDDR3 for performing some tasks

Time

Current

Active

Standby

Power(Area)@LP4 << Power@LP3

© Samsung

LPDDR3 LPDDR4

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LPDDR4 positioning

Possibility to expand market acceptance with its high Bandwidth and low Power characteristics

© Samsung

HPC

uServer

DT/NB

Tablet

Smartphone /Feature Phone

Computing Power

Power Performance

Applications

LPDDRx LPDDRx

DDRx/LP3

DDRx

DDRx

Solutions

Time

Form-factor Power

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LPDDR4 positioning

Possibility to expand market acceptance with its high Bandwidth and low Power characteristics

© Samsung

HPC

uServer

DT/NB

Tablet

Smartphone /Feature Phone

Computing Power

Power Performance

Applications

LPDDRx LPDDRx

DDRx/LP3

DDRx

DDRx

LPDDRx

DDRx

DDRx/LP4(?)

Solutions

Time

Form-factor Power

Bandwidth TCO

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New Technology is just Around the Corner

Expect LPDDR4 production in ‘15

‘13 ‘14 ‘15

Industry (Est.) Definition Evaluation Production

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