15
Ver.2008-12-15 NJG1127HB6 - 1 - 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION !PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed for 800MHz band CDMA2000 cellular phone. This IC has LNA bypasses function, and high gain mode or low gain mode can be selected. High IIP3 and a low noise are achieved at the High gain mode. And low current consumption can be achieved at the low gain mode because LNA enters the state of the standby. A small and thin package of USB8-B6 is adopted. ! FEATURES "Low operation voltage +2.8V typ. "Low control voltage +1.85V typ. [LNA high gain mode] "High Input IP3 +11dBm typ. @ f=880MHz "Low noise figure 1.4dB typ. @ f=880MHz [LNA low gain mode] "Low current consumption 15uA typ. "High Input IP3 +19dBm typ. @ f=880MHz "Small & thin package USB8-B6 (Package size: 1.5mm x1.5mm x 0.55mm typ.) ! PIN CONFIGURATION Note: Specifications and description listed in this catalog are subject to change without prior notice. NJG1127HB6 Pin Connection 1.V INV 2.GND 3.RF OUT 4.GND 5.RF IN 6.GND 7. V CTL 8. GND 1 Pin INDEX (Top View) Bias Circuit Logic Circuit 1 3 5 8 7 6 2 4

NJG1127HB6 800MHz Band LNA GaAs MMIC - Mouser · PDF fileVer.2008-12-15 NJG1127HB6-1 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION!PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed

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Page 1: NJG1127HB6 800MHz Band LNA GaAs MMIC - Mouser · PDF fileVer.2008-12-15 NJG1127HB6-1 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION!PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed

Ver.2008-12-15

NJG1127HB6

- 1 -

800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION !PACKAGE OUTLINE

The NJG1127HB6 is a LNA IC designed for 800MHz band CDMA2000 cellular phone. This IC has LNA bypasses function, and high gain mode or low gain mode can be selected. High IIP3 and a low noise are achieved at the High gain mode. And low current consumption can be achieved at the low gain mode because LNA enters the state of the standby. A small and thin package of USB8-B6 is adopted. ! FEATURES "Low operation voltage +2.8V typ. "Low control voltage +1.85V typ. [LNA high gain mode]

"High Input IP3 +11dBm typ. @ f=880MHz "Low noise figure 1.4dB typ. @ f=880MHz

[LNA low gain mode] "Low current consumption 15uA typ. "High Input IP3 +19dBm typ. @ f=880MHz

"Small & thin package USB8-B6 (Package size: 1.5mm x1.5mm x 0.55mm typ.) ! PIN CONFIGURATION

Note: Specifications and description listed in this catalog are subject to change without prior notice.

NJG1127HB6

Pin Connection 1.VINV 2.GND 3.RF OUT 4.GND 5.RF IN 6.GND 7. VCTL 8. GND

1 Pin INDEX

(Top View)

Bias Circuit

Logic Circuit 1

3 5

8

7

6 2

4

Page 2: NJG1127HB6 800MHz Band LNA GaAs MMIC - Mouser · PDF fileVer.2008-12-15 NJG1127HB6-1 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION!PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed

NJG1127HB6

- 2 -

!ABSOLUTE MAXIMUM RATINGS (Ta=+25°C, Zs=Zl=50Ω)

PARAMETERS SYMBOL CONDITIONS RATINGS UNITS

Supply voltage VDD 5.0 V

Inverter supply voltage VINV 5.0 V

Control voltage VCTL 5.0 V

Input power Pin +15 dBm

Power dissipation PD on PCB board, Tjmax=150°C 160 mW

Operating temperature Topr -40~+85 °C

Storage temperature Tstg -55~+150 °C !ELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS)

(General Conditions: VDD=VINV=2.8V, Ta=+25°C, Zs=Zl=50Ω)

PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

Operating voltage VDD 2.65 2.80 2.95 V

Inverter supply voltage VINV 2.65 2.80 2.95 V

Control voltage (High) VCTL(H) 1.80 1.85 VDD+0.3 V

Control voltage (Low) VCTL(L) 0 0 0.3 V

Operating current1 (LNA High Gain Mode) IDD1 RF OFF, VCTL=1.85V - 10.0 16.0 mA

Operating current2 (LNA Low Gain Mode) IDD2 RFOFF, VCTL=0V - 1 5 uA

Inverter current1 (LNA High Gain Mode) IINV1 RF OFF, VCTL=1.85V - 150 240 uA

Inverter current2 (LNA Low Gain Mode) IINV2 RF OFF, VCTL=0V - 15 40 uA

Control current ICTL RF OFF, VCTL=1.85V - 5 15 uA

Page 3: NJG1127HB6 800MHz Band LNA GaAs MMIC - Mouser · PDF fileVer.2008-12-15 NJG1127HB6-1 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION!PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed

NJG1127HB6

- 3 -

!ELECTRICAL CHARACTERISTICS 2 (LNA High Gain Mode) (General Conditions: VDD=VINV=2.8V, VCTL=1.85V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)

PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

Small signal gain1 Gain1 13.5 15.0 17.0 dB

Noise figure1 NF1 Exclude PCB & connector losses (IN: 0.04dB) - 1.4 1.8 dB

1dB gain compression output power1 P-1dB_1 +4 +9 - dBm

3rd order Input Intercept Point1 IIP3_1 f1=fRF, f2=fRF+100kHz,

Pin=-25dBm +8 +11 - dBm

RF IN VSWR1 VSWRi _1 - 1.5 2.0

RF OUT VSWR1 VSWRo_1 - 1.5 2.0

!ELECTRICAL CHARACTERISTICS 2 (LNA Low Gain Mode)

(General Conditions: VDD=VINV=2.8V, VCTL=0V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)

PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

Small signal gain2 Gain2 -4.0 -2.5 0 dB

Noise figure2 NF2 Exclude PCB & connector losses (IN: 0.04dB) - 2.5 5.0 dB

1dB gain compression output power2 P-1dB_2 +1 +8 - dBm

3rd order Input Intercept Point2 IIP3_2 f1=fRF, f2=fRF+100kHz,

Pin=-12dBm +15 +19 - dBm

RF IN VSWR2 VSWRi _2 - 2.3 2.7

RF OUT VSWR2 VSWRo_2 - 1.8 2.1

Page 4: NJG1127HB6 800MHz Band LNA GaAs MMIC - Mouser · PDF fileVer.2008-12-15 NJG1127HB6-1 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION!PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed

NJG1127HB6

- 4 -

!TERMINAL INFOMATION

CAUTION

1) Ground terminal (No.2, 4, 6, 8) should be connected to the ground plane as close as possible for excellent RF performance, because distance to GND makes parasitic inductance.

! TRUTH TABLE

“H”=VCTL(H), “L”=VCTL(L)

VCTL Gain Mode LNA

L Low bypass

H High pass

No. SYMBOL DESCRIPTION

1 VINV Supply voltage terminal for internal logic circuit (inverter). Please place a bypass capacitor between this and GND for avoiding RF noise from outside.

2 GND Ground terminal.

3 RFOUT

RF signal comes out from this terminal, and goes through an external matching circuit connected to this. Inductor L3 as shown in the application circuit is a part of an external matching circuit, and also provide DC power to LNA. Capacitor C2 as shown in the application circuit is a bypass capacitor.

4 GND Ground terminal.

5 RFIN RF input terminal. The RF signal is input through external matching circuit connected to this terminal. A DC blocking capacitor is not required.

6 GND Ground terminal.

7 VCTL Control port. A logic control signal is required to select High or Low gain mode of LNA. This terminal is set to more than +1.5V of logical high level for High gain mode of LNA, and set to 0~+0.3V of logical low level for Low gain mode.

8 GND Ground terminal.

Page 5: NJG1127HB6 800MHz Band LNA GaAs MMIC - Mouser · PDF fileVer.2008-12-15 NJG1127HB6-1 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION!PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed

NJG1127HB6

- 5 -

!ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) (General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50Ω, with application circuit)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

750 800 850 900 950 100010

11

12

13

14

15

16

17

18

Gai

n (d

B)

frequency (MHz)

NF

(dB

)

Gain

NF, Gain vs. frequency

NF

(f=750~1000MHz)

-80

-60

-40

-20

0

20

40

-30 -20 -10 0 10 20

Pou

t, IM

3 (d

Bm

)

Pin (dBm)

IIP3=+10.4dBm

Pout

Pout, IM3 vs. Pin

IM3

OIP3=+25.7dBm

(f1=880MHz, f2=f1+100kHz)

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10

Pout vs. Pin

Pou

t (dB

m)

Pin (dBm)

P-1dBout=+9.2Bm

Gain 1dB Compression Line

Pout

P-1dBin=-5.0dBm

(f=880MHz)

0

5

10

15

20

-40 -30 -20 -10 0 108

10

12

14

16

IDD (m

A)

Pin (dBm)G

ain

(dB

)

Gain

Gain, IDD vs. Pin

IDD

P-1dBin=-5.0dBm

(f=880MHz)

22

23

24

25

26

27

28

29

30

860 870 880 890 900 9109

10

11

12

13

14

15

16

17

OIP

3 (d

Bm

)

frequency (MHz)IIP

3 (d

Bm

)

OIP3

OIP3, IIP3 vs. frequency

IIP3

(f1=860~910MHz, f2=f1+100kHz, Pin=-25dBm)

Page 6: NJG1127HB6 800MHz Band LNA GaAs MMIC - Mouser · PDF fileVer.2008-12-15 NJG1127HB6-1 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION!PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed

NJG1127HB6

- 6 -

!ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) (General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50Ω, with application circuit)

S11, S22

S21, S12

Zin, Zout

VSWR

S11, S22 (~20GHz) S21, S12 (~20GHz)

Page 7: NJG1127HB6 800MHz Band LNA GaAs MMIC - Mouser · PDF fileVer.2008-12-15 NJG1127HB6-1 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION!PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed

NJG1127HB6

- 7 -

!ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) (General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50Ω, with application circuit)

5.0

6.0

7.0

8.0

9.0

10.0

11.0

12.0

13.0

2.4 2.6 2.8 3.0 3.2 3.4 3.6

P-1

dB(O

UT)

(dB

m)

VDD, VINV (V)

P-1dB(OUT) vs. VDD, VINV

P-1dB(OUT)

(f=880MHz)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

2.4 2.6 2.8 3.0 3.2 3.4 3.60.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VS

WR

i

VDD, VINV (V)V

SW

Ro

VSWRi

VSWRi, VSWRo vs. VDD, VINV

VSWRo

(f=880MHz)

14

16

18

20

22

24

26

28

30

2.4 2.6 2.8 3.0 3.2 3.4 3.64

6

8

10

12

14

16

18

20

OIP

3 (d

Bm

)

VDD, VINV (V)

IIP3

(dB

m)

OIP3

OIP3, IIP3 vs. VDD, VINV

IIP3

(f1=880MHz, f2=f1+100kHz, Pin=-25dBm)

11

12

13

14

15

16

17

18

19

2.4 2.6 2.8 3.0 3.2 3.4 3.60.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Gai

n (d

B)

VDD, VINV (V)

NF

(dB

)Gain

Gain, NF vs. VDD, VINV

NF

(f=880MHz)

6

7

8

9

10

11

12

13

14

2.4 2.6 2.8 3.0 3.2 3.40.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

IDD

(mA

)

VDD, VINV (V)

IINV

(mA

)

IDD

IDD, IINV vs. VDD, VINV

IINV

(RF OFF)

Page 8: NJG1127HB6 800MHz Band LNA GaAs MMIC - Mouser · PDF fileVer.2008-12-15 NJG1127HB6-1 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION!PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed

NJG1127HB6

- 8 -

!ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) (General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50Ω, with application circuit)

10

11

12

13

14

15

16

17

18

-40 -20 0 20 40 60 80 1000.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Gai

n (d

B)

Temperature (oC)N

F (d

B)

Gain

Gain, NF vs. Temperature

NF

(f=880MHz)

0

2

4

6

8

10

12

14

-40 -20 0 20 40 60 80 100Temperature (oC)

P-1

dB(O

UT)

(dB

m)

P-1dB(OUT) vs. Temperature

P-1dB(OUT)

(f=880MHz)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

-40 -20 0 20 40 60 80 100Temperature (oC)

VS

WR

i, V

SW

Ro

VSWRi, VSWRo vs. Temperature

VSWRi

VSWRo

(f=880MHz)

23

24

25

26

27

28

29

-40 -20 0 20 40 60 80 1006

7

8

9

10

11

12

OIP

3 (d

Bm

)

Temperature (oC)

IIP3

(dB

m)

OIP3

OIP3, IIP3 vs. Temperature

IIP3

(f1=880MHz, f2=f1+100kHz, Pin=-25dBm)

0

2

4

6

8

10

12

14

-40 -20 0 20 40 60 80 100Temperature (oC)

IDD (m

A)

IDD vs. Temperature

IDD

(RF OFF)

0

5

10

15

20

0 5 10 15 20frequency (GHz)

k-fa

ctor

k-factor vs. Temperature

-40oC-30oC-10oC0oC

+25oC+40oC+85oC

(f=100MHz~20GHz)

Page 9: NJG1127HB6 800MHz Band LNA GaAs MMIC - Mouser · PDF fileVer.2008-12-15 NJG1127HB6-1 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION!PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed

NJG1127HB6

- 9 -

!ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) (General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50Ω, with application circuit)

-50

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10 20

Pout vs. Pin

Pou

t (dB

m)

Pin (dBm)

P-1dBin=+11.5dBm

Gain 1dB Com pression Line

Pout

P-1dBout=+7.8dBm

(f=880MHz)

-9

-8

-7

-6

-5

-4

-3

-2

-1

-40 -30 -20 -10 0 10 200.0

0.3

0.5

0.8

1.0

1.3

1.5

1.8

2.0

IDD (u

A)

Pin (dBm)G

ain

(dB

)

Gain

Gain, IDD vs. Pin

IDDP-1dBin=+10.8dBm

(f=880MHz)

-100

-80

-60

-40

-20

0

20

-30 -20 -10 0 10 20 30

Pou

t, IM

3 (d

Bm

)

Pin (dBm)

IIP3=+23.5dBm

Pout

Pout, IM3 vs. Pin

IM3

OIP3=+20.5dBm

(f1=880MHz, f2=f1+100kHz)

18

20

22

24

26

28

30

860 870 880 890 900 91018

20

22

24

26

28

30

OIP

3 (d

Bm

)

frequency (MHz)IIP

3 (d

Bm

)

OIP3

OIP3, IIP3 vs. frequency

IIP3

(f1=860~910MHz, f2=f1+100kHz, Pin=-12dBm)

0

1

2

3

4

5

6

7

8

750 800 850 900 950 1000-7

-6

-5

-4

-3

-2

-1

0

1

Gai

n (d

B)

frequency (MHz)

NF

(dB

) Gain

NF, Gain vs. frequency

NF

(f=750~1000MHz)

Page 10: NJG1127HB6 800MHz Band LNA GaAs MMIC - Mouser · PDF fileVer.2008-12-15 NJG1127HB6-1 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION!PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed

NJG1127HB6

- 10 -

!ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) (General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50Ω, with application circuit)

S11, S22

S21, S12

Zin, Zout

VSWR

S11, S22 (~20GHz) S21, S12 (~20GHz)

Page 11: NJG1127HB6 800MHz Band LNA GaAs MMIC - Mouser · PDF fileVer.2008-12-15 NJG1127HB6-1 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION!PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed

NJG1127HB6

- 11 -

!ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) (General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50Ω, with application circuit)

6

7

8

9

10

11

2.4 2.6 2.8 3.0 3.2 3.4 3.6

P-1

dB(O

UT)

(dB

m)

VDD, VINV (V)

P-1dB(OUT) vs. VDD, VINV

P-1dB(OUT)

(f=880MHz)

0.00

0.05

0.10

0.15

0.20

2.4 2.6 2.8 3.0 3.2 3.40

5

10

15

20

IDD

(uA

)

VDD, VINV (V)

IINV

(uA

)

IDD

IDD, IINV vs. VDD, VINV

IINV

(RF OFF)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

2.4 2.6 2.8 3.0 3.2 3.4 3.60.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VS

WR

i

VDD, VINV (V)V

SW

Ro

VSWRi

VSWRi, VSWRo vs. VDD, VINV

VSWRo

(f=880MHz)

20

22

24

26

28

30

32

34

36

2.4 2.6 2.8 3.0 3.2 3.414

16

18

20

22

24

26

28

30

OIP

3 (d

Bm

)

VDD, VINV (V)

IIP3

(dB

m)

OIP3

OIP3, IIP3 vs. VDD, VINV

IIP3

(f1=880MHz, f2=f1+100kHz, Pin=-12dBm)

-4.0

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

0.0

2.4 2.6 2.8 3.0 3.2 3.4 3.60.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Gai

n (d

B)

VDD, VINV (V)N

F (d

B)

Gain

Gain, NF vs. VDD, VINV

NF

(f=880MHz)

Page 12: NJG1127HB6 800MHz Band LNA GaAs MMIC - Mouser · PDF fileVer.2008-12-15 NJG1127HB6-1 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION!PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed

NJG1127HB6

- 12 -

!ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) (General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50Ω, with application circuit)

-8

-7

-6

-5

-4

-3

-2

-1

0

-40 -20 0 20 40 60 80 1002

3

4

5

6

7

8

9

10

Gai

n (d

B)

Temperature (oC)N

F (d

B)

Gain

Gain, NF vs. Temperature

NF

(f=880MHz)

14

16

18

20

22

24

26

28

-40 -20 0 20 40 60 80 10014

16

18

20

22

24

26

28

OIP

3 (d

Bm

)

Temperature (oC)

IIP3

(dB

m)

OIP3

OIP3, IIP3 vs. Temperature

IIP3

(f1=880MHz, f2=f1+100kHz, Pin=-12dBm)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

-40 -20 0 20 40 60 80 100Temperature (oC)

VS

WR

i, V

SW

Ro

VSWRi, VSWRo vs. Temperature

VSWRi

VSWRo

(f=880MHz)

0

2

4

6

8

10

-40 -20 0 20 40 60 80 100Temperature (oC)

IDD (u

A)

IDD vs. Temperature

IDD

(RF OFF)

0

5

10

15

20

0 5 10 15 20frequency (GHz)

k-fa

ctor

k-factor vs. Temperature

-40oC-30oC-10oC0oC

+25oC+40oC+85oC

(f=100MHz~20GHz)

0

2

4

6

8

10

12

14

-40 -20 0 20 40 60 80 100Temperature (oC)

P-1

dB(O

UT)

(dB

m)

P-1dB(OUT) vs. Temperature

P-1dB(OUT)

(f=880MHz)

Page 13: NJG1127HB6 800MHz Band LNA GaAs MMIC - Mouser · PDF fileVer.2008-12-15 NJG1127HB6-1 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION!PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed

NJG1127HB6

- 13 -

!APPLICATION CIRCUIT

!TEST PCB LAYOUT

Parts ID Notes

L1~L4 TAIYO-YUDEN (HK1005 series)

C1,C2 MURATA (GRM15 series)

RF IN RF OUT

VDD

VCTL VINV

L1

L2

L4

L3 C1

C2

(Top View)

PCB (FR-4) : t=0.2mm MICROSTRIP LINE WIDTH

=0.4mm (Z0=50Ω) PCB SIZE=17.0mm X 17.0mm

Parts List

RFIN RFOUT L1

39nH

L2 12nH

L3 12nH

L4 12nH

C1 1000pF

C2 1000pF

VDD=2.8V

VCTL=0V or 1.85V VINV=2.8V

(Top View)

1 Pin INDEX

BiasCircuit

Logic

Circuit 1

3 5

8

7

6 2

4

Page 14: NJG1127HB6 800MHz Band LNA GaAs MMIC - Mouser · PDF fileVer.2008-12-15 NJG1127HB6-1 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION!PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed

NJG1127HB6

- 14 -

0.038±0.01

1pin INDEX

0.4±0.1

(TOP VIEW) (SIDE VIEW)

1.5±

0.05

0.2±0.050.2±0.05

0.3±

0.1

0.2±

0.1

0.2±

0.1

0.5±0.1 0.5±0.1

1.5±0.05

R0.075

7 6 5

1 2 3

8 4

0.14±0.05

(BOTTOM VIEW)

0.3±0.05

0.55±0.05

!PACKAGE OUTLINE (USB8-B6)

TERMINAL TREAT :Au PCB :FR5 Molding material :Epoxy resin UNIT :mm WEIGHT :4mg

Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country.

This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care toavoid these damages.

[CAUTION] The specifications on this databook are only

given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.

Page 15: NJG1127HB6 800MHz Band LNA GaAs MMIC - Mouser · PDF fileVer.2008-12-15 NJG1127HB6-1 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION!PACKAGE OUTLINE The NJG1127HB6 is a LNA IC designed

Mouser Electronics

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