TIP120F,121F,122F DARLINGTON TRANSISTOR (NPN)

TIP125F,126F,127F DARLINGTON TRANSISTOR (PNP)

FEATURESMedium Power Complementary Silicon Transistors

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter TIP120F

TIP125F

TIP121F

TIP126F

TIP122F

TIP127F

Unit

VCBO Collector-Base Voltage 60 80 100 V

VCEO Collector-Emitter Voltage 60 80 100 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current -Continuous 5 A

PC Collector Power Dissipation 2 W

RθJA Thermal Resistance, Junction to Ambient 62.5 ℃/W

RθJC Thermal Resistance, Junction to Case 1.92 ℃/W

TJ Junction Temperature 150 ℃

Tstg Storage Temperature -55~+150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage TIP120F,TIP125F

TIP121F,TIP126F TIP122F,TIP127F

V(BR)CBO IC= 1mA,IE=0 60 80

100 V

Collector-emitter breakdown voltage TIP120F,TIP125FTIP121F,TIP126F TIP122F,TIP127F

VCEO(SUS) IC= 30mA,IB=0 60 80

100 V

Collector cut-off current TIP120F,TIP125F TIP121F,TIP126F TIP122F,TIP127F

ICBO VCB= 60 V, IE=0 VCB= 80 V, IE=0 VCB= 100V, IE=0

0.2 mA

Collector cut-off current TIP120F,TIP125F TIP121F,TIP126FTIP122F,TIP127F

ICEO VCE=30 V, IB=0 VCE=40 V, IB=0 VCE=50 V, IB=0

0.5 mA

Emitter cut-off current IEBO VEB=5 V, IC=0 2 mA

hFE(1) VCE= 3V, IC=0.5A 1000DC current gain

hFE(2) VCE= 3V, IC=3 A 1000

Collector-emitter saturation voltage VCE(sat) IC=3A,IB=12mA IC=5 A,IB=20mA

2 4

V

Base-emitter voltage VBE VCE=3V, IC=3 A 2.5 V Output Capacitance TIP125F,TIP126F,TIP127F

TIP120F,TIP121F,TIP122F Cob VCB=10V, IE=0,f=0.1MHz300 200

pF

12000

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-220F Plastic-Encapsulate Transistors

1 Rev. - 1.1www.jscj-elec.com

TO-220F 1.BASE

2.COLLECTOR

3.EMITTER1 2 3

R1 typ. =5 KΩ typ. =210 Ω

R 1

R 2

R 1

R 2

B

C

E

B

C

R2

ER1 typ. =5 KΩ R2 typ. =210 Ω

NPN PNP

-0.1 -1 -100

50

100

150

200

250

-1 -10 -100 -100010

0 25 50 75 100 125 1500.0

0.5

1.0

1.5

2.0

2.5

3.0

-1 -10 -100 -1000-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

-1.4

-1.6

-1.8

-2.0

-1 -10 -100 -1000-0

-200

-400

-600

-800

-1000

-1200

-0 -1 -2 -3 -4 -5 -6 -7 -8-0

-1

-2

-3

-4

-5

-6

-0.0 -0.5 -1.0 -1.5 -2.0-0.1

-1

-10

-100

-1000

f=1MHzIE=0 / IC=0

Ta=25 oC

REVERSE VOLTAGE V (V)

CAP

ACIT

ANC

E

C

(pF)

VCB / VEBCob / Cib ——

Cib

Cob

-20

10000

1000

-5000

VCE= -3V

Ta=100 oC

Ta=25 oC

COLLECTOR CURRENT IC (mA)

DC

CU

RR

ENT

GAI

N

hFE

IChFE ——

100

CO

LLEC

TOR

PO

WER

DIS

SIPA

TIO

N

P

c (W

)

AMBIENT TEMPERATURE Ta ( )℃

Pc —— Ta

-5000

COLLECTOR CURRENT IC (mA)

BASE

-EM

ITTE

R S

ATU

RAT

ION

VOLT

AGE

V BE

sat

(V)

Ta=25℃

Ta=100℃

β=250

ICVBEsat ——

-5000

-5000

Ta=100℃

Ta=25℃

β=250

VCEsat —— IC

CO

LLEC

TOR

-EM

ITTE

R S

ATU

RAT

ION

VOLT

AGE

V C

Esat

(mV)

COLLECTOR CURRENT IC (mA)

COMMONEMITTERTa=25℃-1.0mA

-0.9mA-0.8mA

-0.7mA

-0.6mA

-0.5mA

-0.4mA

-0.3mA

IB=-0.2mA

COLLECTOR-EMITTER VOLTAGE VCE (V)

CO

LLEC

TOR

CU

RR

ENT

I C

(A

)

Static Characteristic

VCE=-3V

Ta=25℃

Ta=100 oC

BASE-EMITTER VOLTAGE VBE(V)

CO

LLEC

TOR

CU

RR

ENT

I

C (m

A)

IC —— VBE

Typical Characteristics

2www.jscj-elec.com Rev. - 1.1

Typical Characterisitics TIP122

TO-220F Package Outline Dimensions

Min. Max. Min. Max.A 4.300 4.700 0.169 0.185

A1A2 2.800 3.200 0.110 0.126A3 2.500 2.900 0.098 0.114b 0.500 0.750 0.020 0.030

b1 1.100 1.350 0.043 0.053b2 1.500 1.750 0.059 0.069c 0.500 0.750 0.020 0.030D 9.960 10.360 0.392 0.408E 14.800 15.200 0.583 0.598eFФh 0.000 0.300 0.000 0.012h1h2L 28.000 28.400 1.102 1.118

L1 1.700 1.900 0.067 0.075L2 0.900 1.100 0.035 0.043

2.700 REF.3.500 REF. 0.138 REF.

0.106 REF.

0.800 REF.0.500 REF.

0.031 REF.0.020 REF.

Symbol Dimensions In Millimeters Dimensions In Inches

2.540 TYP. 0.100 TYP.

1.300 REF. 0.051 REF.

3www.jscj-elec.com Rev. - 1.1