Transistors F09

7/25/2019 Transistors F09

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ME 6405 Student Lecture

Transistor

Sung-bum Kang

Keun Jae Kim

Hongchul SohnWenei !u

October 1, 2009

Georgia Institute of Technology


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"ontents

#ntroduction to Transistor$S%ea&er' Sung-bum Kang(

)ield E**ect Transistor$S%ea&er' Hongchul Sohn(

+oer Transistor

$S%ea&er' Wenei !u(

,

4

.%%lications o* Transistor$S%ea&er' Wenei !u(

5

/i%olar Junction Transistor$S%ea&er' Keun Jae Kim(


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1Transistor2 +art ,


,


+oer Transistor

$S%ea&er' Wenei !u(

4


5



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#ntroduction

3uestion ,' Ho can e trans*er originalsignal in long distance ithout loss

.m%li*ier and Electronic Sitch are needed

Amplifier: any deice that changes, usually increases, the amplitude of a signal!

"lectronic #$itch: s$itch that the physical opening and closing is achieed by

applying appropriate electrical control signals!

3uestion ' Ho can e control the T7 ith

remote-controller

3uestion ' Ho can a com%uter recogni8e

0$o**( and ,$on( *or com%uting


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#ntroduction

Earl9 0thcentur9: ;acuum tube as used *or the am%li*ier and sitch

E


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#ntroduction @ +rogress o* Transistor

more than A billion transistors is

%ac&ed into an area o* *ingernail

,A4,: 7acuum Tube

,A4>: the *irst $Bermanium( T?

,A54: Silicon T?

,A5>: #ntegrated "ircuit

Se% 00A: nm silicon a*er


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#ntroduction @ Dnderl9ing Science

Semiconductor is a basic b!ildin' material o most inte'rated circ!its.

is a material that has an electrical resistivity bet%een that o a

cond!ctor and an ins!lator.

has a e% char'e carriersholes or ree electrons/ and may hence be

classiied as almost ins!lator. 0o%ever, the cond!ctivity increases by addin' im&!ritiesdo&in'/.

Siliconis used in most

commercial

semiconductors


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#ntroduction @ Dnderl9ing Science

o%ing &ositive/ty&e do&in' is addin' a certain ty&e o atoms to thesemicond!ctor in order to increase holes.

ty&e semicond!ctor, acce&tor

+ne'ative/ty&e do&in' is addin' some amo!nt o an element %ith

more electrons in order to increase ree electrons. +ty&e semicond!ctor, donor

.dd Brou% ###$/oron(.dd Brou% 7 $+hos%horous(


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#ntroduction @ T9%es o* Transistor

Transistor are categori8ed b9 Semicond!ctor material# 'ermani!m, silicon, 'alli!m arsenide, etc. Str!ct!re# BJT, "T, I8"T :S"T/, I8BT

olarity# ++, + BJTs/; +channel, channel "Ts/

a5im!m &o%er ratin'# lo%, medi!m, hi'h

a5im!m o&eratin' re

Beneral +ur%ose Transistors /i%olar Junction Transistor $/JT(

)ield E**ect Transistors $)ET(

+oer Transistors


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/JT #ntroduction

+


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Beorgia #nstitute o* Technolog9 ,5

/JT "haracteristics

#"is controlled b9 #/$%urrent %ontrol( $beta( is am%li*ication *actor *or

transistor

T9%ical ;alue o* is 0 00iE= iC + iB

iC= iB

VBE= VB VEVCE= VC- VE


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C%erating ?egions

/JT C%erating ?egions


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C%erating ?egions

OperatingRegion

Parameters Mode

Cut Of

VBE

< Vcut-in

VCE > VsupplyIB= IC= 0

Sitc! O""

#inear

VBE= Vcut-in

Vsat< VCE < VsupplyIC= $%IB

&mpli'cation

Saturated

VBE= Vcut-in(

VCE < Vsat

IB> IC(ma)( IC(ma)> Sitc! O*



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Beorgia #nstitute o* Technolog9 ,>

,( "uto** ?egion'

B"> c!t1in, iB ? @ iA ? @, A" s!&&ly

( .cti;e I Linear ?egion' B"? c!t1in, iB @ iA ?iB, sat> A" > s!&&ly

( Saturation ?egion' B"? c!t1in, iB iA,ma5 iA,ma5, A" > sat

7in

7su%%l9



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7Su%%l97in

?/

?"

3uestion' What is the minimum &inthat can use the transistor as an

am%li*ierBi;en'

C DB? 1@ kE

C DA? 1 kE

C F ? 1@@

C S!&&ly? 1@

C c!tin? @.7

C sat ? @.G

i' i%I( 000A>I,00 00A>mA

/JT as .m%li*ier

&in) i'*+'@&'" 0

&supply @ i% N+%@ &%"0

i% $&supply@ &%"( I +%

#et &%" &sat 0!2&

i% $,0 @ 0( I ,000 A>mA

i% (i'

&in i'*+'- &'"

#et &'" &cut)in 0!.&

&in 0!09/*10)*10000 - 0!.&

&in ,6>&or greater


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)rom

rdEercise

Turns onIo**coilsdigitall9

/JT as Sitch


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4

5

, #ntroduction to Transistor$S%ea&er' Sung-bum Kang(


+oer Transistor

$S%ea&er' Wenei !u(



1Transistor2 +art


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)ield-E**ect Transistors

/asics Aond!ction o a $channel( is controlled by electric ield eect

Three terminals# 'ate, so!rce, drain

olta'econtrolled c!rrent device

control terminal

current channel

o* charge carriers *or charge carriers

control

;oltage

ery little c!rrent lo%s thro!'h in&!t 'ate/ terminals


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/JT ;s )ET

What %as BJT thenH

= c!rrentcontrolled c!rrent device

Aom&arison


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T9%es

J)ET $Junction )ET(

MCS)ET $Metal-oide-semiconductor )ET(

"S"T etalsemicond!ctor "T/

0"T 0eterostr!ct!re "T/ :"T od!lation do&ed "T/

I8BT Ins!lated'ate bi&olar transistor/

o%er :S"Ts

D""T ast reverse or ast recovery e&ita5ial diode "T/

IS"T Ionsensitive "T/

+="T

J)ET $Junction )ET(

MCS)ET $Metal-oide-semiconductor )ET(


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J)ETs

J)ETs

nchannel

Beneral +ro%erties =dvanta'es# !ch hi'her in&!t resistance, lo%er noise, easier

abrication, ability to handle hi'her c!rrents and &o%ers

isadvanta'es# Slo%er s&eeds in s%itchin' circ!its, smaller

band%idth or a 'iven 'ain in an am&liier

&channel


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n-channel J)ET

"haracteristics


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n-channel J)ET

"haracteristics

Ideali-ed Static

2(1 )GSD DSS

P

vi I

V= +


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n-channel J)ET

"haracteristics

ractical Static

2(1 ) (1 )GS DS D DSS

P A

v vi I

V V= + +

Transer


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MCS)ETs

MCS)ETs or #nsulated-gate )ET $#B)ET(

nchannel "nhancement

Beneral +ro%erties

In&!t resistance even hi'her

sed &rimarily in di'ital electronic circ!its

rovide controlledso!rce characteristics in am&liier circ!its

nchannel e&letion


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n-channel Enhancement MCS)ET

"haracteristics


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n-channel Enhancement MCS)ET

"haracteristics

ractical2( ) (1 )DS

D GS T

A

vi K v V

V= +2[2( ) ]

D GS T DS DSi K v V v v=


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n-channel e%letion MCS)ET

"haracteristics

ractical2

[2(1 )( ) ( ) ]GS DS DS D DSS

P P P

v v vi I

V V V= +

2(1 ) (1 )GS DS D DSS

P A

v vi I

V V= + +


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Task# esi'n a nchannel commonso!rce J"T =m&liier

.m%li*iers: Sitches

.%%lications

Oou ".< do itPP+sstP Oou can read itPP

htt%'IIelectronics-tutorialssIam%li*ierIam%html


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1Transistor2 +art 4



+oer Transistor$S%ea&er' Wenei !u(

,



4

5


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+oer Transistor

Aoncerned %ith deliverin' hi'h &o%ersed in hi'h volta'e and hi'h c!rrent a&&lication

In 'eneralabrication &rocess dierent in order to# issi&ate more heat =void breakdo%n

Lo%er 'ain than si'nal level transistor


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+oer /JT

Same str!ct!re to the si'nal level BJT

The active area is distinctively hi'herhi'h c!rrent

ca&acity

Thick and lo%do&ed collector re'ion

Lar'e heat dissi&ation lar'er dimensions


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+oer MCS)ET

Same %orkin' &rinci&les to

:S"T

esi'ned to handle lar'e

&o%er Lo% internal volta'e dro&

and hi'h c!rrent ca&acity

0i'h comm!tation s&eed

and 'ood eiciency at lo%

volta'esKhi'h s&eed s%itch

.%%lications o* Transistor


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.%%lications o* Transistor

building bloc&s *or modern electronics

i'ital lo'ic circ!its icro&rocessors, microcontrollers, chi&s TTL/ hototransistors De&laces normal s%itches, mechanical relays. = converter

"ncoders !lti&le5ers o%er s!&&lies

moreQ

micro%rocessorireless

communication

motorhead%hone:

micro%hone

. li ti $ t (


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.%%lications$cont(

M S%itch or a di'ital si'nal# BJT or :S"T

M S%itch or a analo' si'nal# J"T

M S%itch or a &o%er si'nal# o%er :S"T or BJTM A!rrent controlledc!rrent am&liier# BJT

M olta'e controlledc!rrent am&liier# J"T or :S"T


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Small input voltage and large output current

operated in the cut-off region(open) and saturation region(close)

"5am&le#

G+N9@4 ++

=ss!min' L" re

:!t&!t?@Ko

:!t&!t?)on, the transistor is in sat!ration, %ith base c!rrent

(5 0.7 ) /10 0.43B

I V V K mA= =

Aollector c!rrent L" c!rrent/ is limited

by collector resistor

mAVVVIC

28100/)2.025( ==

/JT as sitches

/JT li*i


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/JT as am%li*iers

.udio am%li*iers: radio *reRuenc9 am%li*iers:

regulated %oer su%%lies

o! input impedance and high voltage gain

"5am&le

S&eaker am&liier

BJT series &rod!ce hi'her 'ain


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.%%lications o* )ET

.d;antages o* )ET o;er /JT

They are devices controlled by volta'e %ith a very hi'h in&!tim&edance 1@7to 1@1Gohms/

"Ts 'enerate a lo%er noise level than the Bi&olar J!nction

Transistor BJT/ "Ts are more stable than BJT %ith tem&erat!re "Ts are easier to man!act!re than the BJT, beca!se they re

e%er ste&s to be b!ilt and they allo% more inte'rated devices in thesame IA

"Ts behave like resistors controlled by volta'e or small drain

so!rce volta'e val!es The hi'h in&!t im&edance o "T allo%s them to %ithhold loads lon'

eno!'h to allo% its !sa'e as stora'e elements

o%er "Ts can dissi&ate hi'her &o%er and can s%itch very lar'e

c!rrents.

. li i * )ET


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.%%lications o* )ET

.m%li*iersCSmall Si'nalCLo% istortionC0i'h 8ainCLo% +oise am&liierCSelectivityC0i'hre

SitchesCAho&&erTy&eC=nalo' 8ateCAomm!nicator

+rotection iodes

CLo%leaka'e

"urrent Limiters

?esistors

Miers

Cscillators


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)ET as analog sitch-eam%le

When 8S? @, "T becomes sat!rated and it behaves like a

small resistance>1@@ ohm/and, thereore,

:T? ODS D3 DS :+//PQ in

DDS, :T + @

When a ne'ative volta'e e

a&&lied to the 'ate, the "T o&erates in the

c!to re'ion and it acts like a very hi'h

resistance !s!ally o some me'a ohms.

0ence o!t&!t volta'e becomes nearlye


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"ontact in*ormation$in order o* %resenting(

Sung-bum Kang sb&anggatechedu

Keun Jae Kim &&im45gatechedu

Hongchul Sohn hsohn=gatechedu Wenei !u ugatechedu

? *


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?e*erences

i&i%ediaorg

googlecom

1#ntroduction to Electrical Engineering2: Mulu&ata S Sarma: C*ord Dni;ersit9 +ress: 00,: "ha% =4>4

)all 00> Transistors Slides

htt%'II-gengcamacu&ImmgIteachingIlinearcircuitsIindehtml

htt%'IIeni&i%ediaorgIi&iI)ET

htt%'IIeni&i%ediaorgIi&iIJ)ET

htt%'IIeni&i%ediaorgIi&iIMCS)ET

htt%'IIslidesharenetIguestb5d>aI*ets

1#ntroduction to Electrical Engineering2: Mulu&ata S Sarma: C*ord Dni;ersit9 +ress: 00,: "ha% =4>4

)all 00> Transistors Slides

htt%'II-gengcamacu&ImmgIteachingIlinearcircuitsIindehtml

htt%'IIeni&i%ediaorgIi&iI)ET

htt%'IIeni&i%ediaorgIi&iIJ)ET

htt%'IIeni&i%ediaorgIi&iIMCS)ET

htt%'IIslidesharenetIguestb5d>aI*ets

htt%'IIelectronicsditieIsta**I9%anarinILecture0I0AImicro%rocessor-athlon-64F%g

htt%'IIbill*r9mirecomIblogI%-contentIu%loadsI00>I05Iireless-communication-connection-,000F%g

htt%'IIc9bermediatechcomIimagesIWirelessHead%hone-bigF%g

htt%'IIcoloradoeduI%h9sicsI%h9s0I%h9s0*a0AI%d*docsI.


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Than& 9ouP

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Transistors F09