TRION PECVD SYSTEM OPERATING MANUAL - UTA PECVD.pdf · The TRION ORION PECVD (plasma enhanced chemical vapor deposition) can produce uniform plasma-deposited Silicon Dioxide ( SiO

DOCUMENT: TRION PECVD STANDARD OPERATING PROCEDURE Version: 1.0

TRION PECVD SYSTEM OPERATING MANUAL

Version: 1.0 NOV 2009

UNIVERSITY OF TEXAS AT ARLINGTON

Nanofabrication Research and Teaching

Facility


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TABLE OF CONTENTS

1. Introduction………………………………………………………..3

1.1 Scope of Work…………………………… ……….......3

1.2 Description………………………………… …….…….3

1.3 Safety……………………………………… … ..………3

2. Requirements……………………………………..….….………...5

2.1 Training…………………………………….…….…….…5

2.2 Restrictions…………………………………………,…...5

2.3 System Checks…………………………….……....……6

3 Operating Procedure ………………………..…..……..…….....9

3.1 Automatic Process Control….………….…....…..….…9

3.2 Emergency Abort Procedure...……………….…..…...12

4 Sample Recipes…….………………………..…..……..…….....18

5 Nanofab Response Plan………………………………………..22


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1 INTRODUCTION

1.1 Scope These procedures apply to the TRION ORION PECVD system. All maintenance should follow the procedures set forth in the manufacturer’s maintenance and operations manuals. This document is for reference only. Personnel should be trained by authorized staff before operating this equipment.

1.2 Description The TRION ORION PECVD (plasma enhanced chemical vapor deposition) can produce uniform plasma-deposited Silicon Dioxide ( SiO2 ), Silicon Nitride ( Si3N4

), Oxynitride, Amorphous Silicon ( a-Si ), Phosphosilicate glass (PSG) and Borophosphosilicate glass (BPSG) thin films at lower temperatures (250°C- 400°C) on 1”- 4” diameter wafers, glass slides and small samples.

1.3 Safety

1.3.1 This machine uses EXTREMELY HAZARDOUS gas mixtures which are colorless, flammable, and possibly pyrophoric {SiH4 (15%) / Ar (85%)}. This gas mixture can form flammable mixtures in air and release of this gas which has not spontaneously ignited must be considered extremely dangerous and should not be approached. This tool also uses extremely TOXIC gas mixtures which are colorless, flammable, and TOXIC {SiH4 (15%) / PH3 (1.98%) / (Ar (85%)}, {SiH4

(15%) / B2H6 (2.01%) / (Ar (85%)}. These gas mixtures can cause significant adverse health effects because the Phosphine and Diborane contents exceed exposure limits at the percentage in this mixture. Phosphine has a fishy odor and a low odor threshold therefore the fishy odor provides a good warning of a release of this gas mixture. Diborane has a sickly-sweet odor and is a powerful caustic irritant to the skin, eyes and mucous membranes.

Figure 1.3.1


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In addition, this tool also uses Anhydrous Ammonia (NH3) gas which is colorless, powerful caustic irritant to the skin, eyes and mucous membranes with a pungent odor. Lastly this tool uses Tetrafluoromethane (CF4), Nitrous Oxide (N2O) and Nitrogen (N2) gases which in high concentrations can be asphyxiates. The process gases are normally pumped out of system; however if the process pressure is not being maintained or the system cannot reach base pressure notify NanoFAB staff immediately.

Figure 1.3


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1.3.2 Before using this tool read the ORION PECVD material safety data sheets( MSDS) provided . These MSDS’s are located in a binder labeled ORION PECVD MSDS placed near the tool.

1.3.3 This tool continuously monitors, displays and records the toxic gas PPM (parts per million) levels using the Drager Polytron 2 XP Transmitters and DragerGard controller. If a PPM level exceeds an alarm set point the controller will relay an audible and visual alarm throughout the building. If the Orion PECVD system’s alarm light tower YELLOW light goes ON immediately leave the NanoFab building informing others to leave on your way out. If the light tower’s RED alarm light and audible alarm goes ON immediately leave the NanoFAB building through the closest and safest emergency exit and wait for emergency personnel to arrive. DO NOT operate this machine if the Drager Polytron 2 XP Transmitters display any warnings, faults or if any RED leds are ON. If any warning, alarms or RED leds are ON notify NanoFAB staff immediately.

Figure 1.3.3

1.3.4 Do not operate this tool and/or stop your process if the S.DOC process gas abatement system light tower turns YELLOW or RED and notify NanoFAB staff immediately.

Figure 1.3.4


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1.3.5 This machine uses RF frequency power. DO NOT operate this machine with any RF component enclosures/panels open.

1.3.6 This machine has an EMO (Emergency Off) switch/button mounted on the left side panel. The EMO switch should be pressed only in an emergency. An emergency would be fire, smoke, electrocution hazards, and an injury to anyone using this particular piece of equipment. If the EMO is pressed notify NanoFAB staff immediately.

1.3.7 Keep your fingers clear of the Load lock lid when loading/unloading wafers. Do not place anything on the Load lock lid.

2 REQUIREMENTS

2.1 Training

You must be a qualified user on TRION ORION PECVD System. The

ORION PECVD is used to deposit thin films on any type of 4” diameter substrates, 1”- 3” diameter wafers, sample pieces and glass slides that are stable at 200-350C°. Sample pieces, glass slides and 1”- 3” diameter wafers and can be processed only if they are bonded to a 4” diameter carrier wafer (bond with a drop silver paint, MUNG II paste or other approved bonding material).

2.2 Restrictions

2.2.1 Read the NanoFAB Response Plan at the end of this SOP. 2.2.2 Read the ORION PECVD material safety data sheets (MSDS) provided. 2.2.3 All wafers (deposition and carrier) must not have any edge chips, nicks, or

cracks. The backside must be clean and flat (no warps, dimples, defects). 2.2.4 Masking Materials NOT Allowed: Any material not stable at 200-350C°. Positive

and Negative resist masks. 2.2.5 Masking Materials Allowed: All Dielectric and Metallic masks are allowed. 2.2.6 A 4” diameter wafer needs to be loaded for all runs. If plasma depositing or

performing chamber plasma cleans, use one of the dedicated wafers located by the machine.

2.2.7 ORION PECVD can ONLY be used Monday-Friday’s from 8am to 6pm (Excluding Holidays).

2.2.8 Read any posted NanoFab Engineering Change Notices (ECN) for any hardware, process or safety changes before running the tool.

2.2.9 Do not leave the ORION PECVD for more than 30 minutes at a time during a run. The user must check the status every 30 minutes to verify there are no alarms.

2.2.10 Any deposition more than 5000A require NanoFAB approval. 2.2.11 Users can only run NanoFAB recipes named :

SiO2-NanoFab- Si3N4 -NanoFAB- a-Si-NanoFAB- NanoFAB-Clean.


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Figure 2.2.11

2.2.12 The ONLY plasma deposition recipe changes allowed without staff approval is the deposition TIME parameter.

2.2.13 Plasma deposition recipes other than NanoFAB recipes can be run with staff approval ONLY. Save these other recipes to dedicated NanoFAB-Orion PECVD USB memory stick (E :\) and not to the system hard drive. NanoFAB memory stick must not be removed or taken outside NanoFAB.

2.2.14 If you are using the wafer backside deposition plate ( S.S ) allow the plate / wafer

to cool down in the Load Lock for 30 minutes before removing. This plate is

250°C- 400°C and will cause severe burns to your fingers!! 2.2.15 Users are not allowed to VENT or OPEN the Main Chamber Lid. If there is

process or hardware problem that requires chamber venting notify NanoFab staff to perform a chamber vent sequence.

2.3 System Checks

2.3.1 Check to ensure the Drager Polytron 2 XP Transmitters have NO warnings or faults displayed and check if any RED leds are ON. If any warning or alarms are displayed or the RED leds are ON notify NanoFab staff immediately.

2.3.2 Check to ensure the S.DOC process gas abatement system light tower is GREEN. If the light is YELLOW or RED and notify NanoFab staff immediately.


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Figure 2.3.1 – 2.3.2

2.3.3 Check to ensure the top electrode/ RF generator water flow meter is > 2 l/min and there are no water leaks.

2.3.4 Check to ensure the Matching Network toggle switch is set to AUTO.

Figure 2.3.3 – 2.3.4

3 OPERATING PROCEDURE

3.1 Automatic Process Control

3.1.1 When you first approach the system you may see one of these computer touch screen or MS Windows screen displays :


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Screen (I) Screen (II)

Screen (III) Screen (IV)

If you see Screen (I)

If you see Screen (II)

Check the Main Chamber (process) base pressure is 0-2 mtorr and the Load Lock Chamber base pressure ≤ 40 mtorr. If either of these pressures is higher than specified contact NanoFAB staff. If the Main Chamber pressure is ≤ 2 mtorr and Load Lock ≤ 40 mtorr, press Cancel to get to screen (IV) Main Menu (Load Wafer).

Press Unload Wafer and wait for Unload Wafer Sequence to complete then press OK to get to screen (IV) Main Menu (Load Wafer).


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(Wait for sequence to end) ( Unload Wafer Sequence finished)

If you see Screen (III)

Figure: Mini2 Icon

3.1.2 In Main Menu (Load Wafer) if the Main Chamber and Load Lock Chamber has not been checked press Stand By , wait for system to go into Stand By mode and check if both chamber pressures are OK. If the pressures are OK press Cancel to go to Main Menu and press Load Wafer. The Load lock lid will now open. Be sure not to place anything on the Load lock lid.

3.1.3 Place your 4” wafer or bonded samples on a 4” carrier wafer on the robot arm. The wafer should be placed such that the rounded wafer edge mates with the curved robot spacer plate. After the wafer is loaded press OK and keep your fingers clear as the Load lock lid closes. If you are depositing a film on the wafer backside (device side down) use the backside deposition plate provided. If you are using the wafer backside deposition plate (SS) allow the plate / wafer to cool down in the Load Lock for 30 minutes before removing. This plate is 250°C- 400°C and will cause severe burns to your fingers!!

Press shortcut to Mini2 icon and wait for system hardware to initialize to get to screen iv) Main Menu (Load Wafer).


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Figure 3.1.2 Figure 3.1.3

3.1.4 Wait for Load Wafer sequence to finish. Do not press the Abort unless an emergency arises. If you want to remove your wafer wait until the Load Wafer sequence finishes and then press Unload Wafer to retrieve your wafer. After Load Wafer sequence finishes the system will go to Main Menu (Unload Wafer) screen.

Figure 3.1.4 Figure 3.1.5

3.1.5 In Main Menu screen press Files to go to Recipes screen. List of recipes from the hard drive (HD) are shown.

Figure 3.1.5


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Users can only run recipes named:

SiO2-NanoFab- Si3N4 -NanoFab- a-Si-NanoFab- NanoFab-Clean

Touch the HD process recipe you will run or retrieve the your recipe from the dedicated NanoFab-Orion PECVD USB memory stick and touch Floppy Drive to access your staff approved recipe. Once you have selected a recipe to run the recipe name will appear at top right under the Current Recipe heading. To save a recipe touch Save button and only save to the dedicated NanoFab-Orion PECVD USB memory stick ( E:\). Do not save recipes to the HD; this space is reserved for NanoFAB recipes. After you have loaded a recipe to run or saved a recipe touch Exit to Go to Main Menu. Now the Main Menu has two addition buttons Manual Process Control and Automatic Process Control.

Step 1 Step 2

Step 3 Step 4

3.1.6 In Main Menu if you are ready to start PECVD deposition, press Automatic Process Control. In this mode of control the computer controls the entire deposition sequence (up to 15 steps). The only button active is the Abort button.


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If the Abort button is pressed all gases and power will shut off and return to the Main Menu (Wafer Unload) screen. If you press the Abort button you MUST run the ABORT- PURGE PG (chamber purge program) before unloading your wafer.

Always run the wafer in Automatic Process Control mode and NOT in Manual Process Control. After the deposition recipe sequence is completed (programmed etch time count down) the process completed message will appear. Touch the OK button and then press Unload Wafer to start the unload sequence to retrieve your wafer.

Figure 3.1.6

3.1.7 In Main Menu (Manual/Automatic) if you need to view the process recipe parameters, change the recipe deposition TIME parameter press the


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Manual Process Control button. ONLY plasma deposition recipe changes allowed without staff approval is the deposition TIME parameter!

The Manual Process Control screen displays all process variable set points and the corresponding reads. To change the deposition TIME parameter value, touch on the TIME set point value box. A keypad will pop up for numeric data entry for the TIME variable. Enter the new time (secs) and touch the ENTER box. Any changes made to the process recipe will be kept until a new recipe is loaded from HD or USB memory stick. In order to permanently save your changes to the current recipe you need to touch Exit button to go back to and touch Files and then press save button. Do NOT SAVE process variable changes for NanoFab recipes, and remember to save your recipe to the dedicated NanoFab-Orion PECVD USB memory stick ( E:\). Do not save your recipes to the hard drive. Deposition recipes other than NanoFAB recipes can be run with staff approval ONLY. If you have questions about process windows and workable variable set points contact NanoFAB staff.

Figure 3.1.7

3.1.8 All NanoFAB, TRION, User Made staff approved recipes MUST have a N2 purge step at the end of the recipe sequence. This is to purge the Main Chamber and prevent hazardous gases from possibly back flowing into the Load Lock chamber. Use the following purge step ( 250 mtorr , 250 sccm N2 , 180 secs)

Figure 3.1.8


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3.1.9 After you are done modifying or viewing a recipe touch Exit to return to Main Menu. To permanently save changes to the current recipe on the NanoFab-Orion PECVD USB memory stick touch Files and then press Save button ( E:\ ) or to start the PECV sequence touch Automatic Process Control. After the deposition sequence is completed the process completed message will appear. Touch the OK button to return to Main Menu (Unload Wafer) screen.

Figure 3.1.9

3.1.10 To unload your wafer touch Unload Wafer and wait for the Unload Sequence Finished message to display. Remove your wafer from the load lock then touch the OK button. Keep your fingers clear as the load lock lid closes and the system returns to Main Menu. If you are using the wafer backside deposition plate (SS) allow the plate / wafer to cool down in the Load Lock for 30 minutes before removing. This plate is 250°C- 400°C and will cause severe burns to your fingers!!


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Figure 3.1.10

3.1.11 After you are finished depositing the thin films on your wafers load the dedicated plasma clean wafer ( graphite plate located by the machine) and run NanoFab-Clean recipe time for 2X the total deposition times used. For thick deposition films > 0.8 um run the NanoFab-Clean every 0.8 um of deposited film to minimize the chamber flaking.

3.1.12 When you are finished processing the plasma clean wafer leave the system in stand by mode by touching the Standby button.


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Figure 3.1.12

3.1.13 Enter the required information in the logbook. One logbook entry per wafer processed.

3.2 Emergency Abort Procedure

3.2.1 Reasons to abort a run: wrong recipe, wrong recipe set points, set point reads not being met, gas distribution plate (Showerhead) arcing, unstable plasma, excessive chamber flaking/particles, After 10-15 seconds the “ICP” electrode Reflected Power > 5% of Forward Power.

3.2.2 Flow Alarm occurs during processing or Flow Alarm is RED on the Manual

Process Control screen.

Figure 3.2.2


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3.2.3 If you need to abort the process touch the Abort button. All gases and power will shut off and return to Main Menu (Unload Wafer). If you press the Abort button you MUST run the ABORT- PURGE PG (chamber purge program) before unloading your wafer.

Touch Unload Wafer to retrieve your wafer. If the Abort is due to equipment malfunction notify NanoFab staff and note it in the logbook. 3.2.4 If you abort the process due to wafer transfer problems look through the chamber

view port window using a flashlight. If the wafer is still on the chuck unload the wafer using Unload Wafer button. Try another wafer, if problem continues notify NanoFAB staff and note it in the logbook.

3.2.5 If the wafer is NOT on the chuck or you cannot determine where the wafer is leave the wafer in the chamber, notify NanoFAB staff and note it in the logbook that a wafer is stuck in the chamber.

3.2.6 For any fault messages (pressure, gas flow, temperature, water flow) recheck section 4. ORION PECVD System Checks for possible cause notify NanoFAB staff and note it in the logbook.

3.2.7 For various machine problems such as wafer stuck in the chamber, broken wafer, scratches on wafer notify NanoFAB staff and note it in the logbook.

3.2.8 For various wafer problems such as incorrect thickness, poor thickness uniformity, excessive particles verify all the recipe parameters are correct , run another plasma clean wafer and monitor the deposition recipe parameters during the process. If problem persists notify NanoFAB staff and note it in the logbook.

3.2.9 Users are not allowed to VENT or OPEN the Main Chamber Lid. If there is process or hardware problem that requires chamber venting notify NanoFAB staff to perform a chamber vent sequence.


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4 SAMPLE RECIPES

SiO2-Nanofab-1000 Step 1 Step 2 Research group

Usage

frequency (no.

times)

Pressure set 1200

Pressure read

ICP power set 300

ICP power read

ICP REF read

RIE power set 35

RIE power read

RIE REF read

Temp set 360

Temp read

Process time set

Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set 179

N2O read

N2 set 250 2

N2 read

SiH4/Ar set 18

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


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MJU_a-Si_p Step 1 Step 2 Research group

Usage

frequency (no.

times)

Pressure set 900 250 Dr. Magnusson 3

Pressure read

ICP power set 250

ICP power read

ICP REF read

RIE power set 10

RIE power read

RIE REF read

Temp set 310

Temp read

Process time set 230 180

Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 250

N2 read 2 2

SiH4/Ar set

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set 75


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MJUM_a-Si Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read

ICP power set 100

ICP power read

ICP REF read

RIE power set

RIE power read

RIE REF read

Temp set 200 200

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 250

N2 read 2 2

SiH4/Ar set 20

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


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MJUM_a-Si_P Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read

ICP power set 100

ICP power read

ICP REF read

RIE power set

RIE power read

RIE REF read

Temp set 200 200

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 250

N2 read 2

SiH4/Ar set

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set 210

SiH4/Ar/B read


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Ram_oxide_A Step 1 Step 2 Research group

Usage

frequency (no.

times)

Pressure set 350 250 Dr. Koh 44

Pressure read

ICP power set 200

ICP power read

ICP REF read

RIE power set

RIE power read

RIE REF read

Temp set 200 360

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set 25

N2O read

N2 set 50 100

N2 read 2 2

SiH4/Ar set 2

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


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SiO2_4nm_mark Step 1 Step 2 Research group

Usage

frequency (no.

times)

Pressure set 900 250

Pressure read

ICP power set 75

ICP power read

ICP REF read

RIE power set 30

RIE power read

RIE REF read

Temp set 150 150

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set 160

N2O read

N2 set 225 250

N2 read 2 2

SiH4/Ar set 24

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


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SiO2-DR_MOON_28 Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read

ICP power set 300

ICP power read

ICP REF read

RIE power set

RIE power read

RIE REF read

Temp set 280 280

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set 179

N2O read

N2 set 250 250

N2 read 2 2

SiH4/Ar set 5

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


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SiO2-Faster deposition Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read

ICP power set 300

ICP power read

ICP REF read

RIE power set

RIE power read

RIE REF read

Temp set 350 350

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set 179

N2O read

N2 set 250 250

N2 read 2 2

SiH4/Ar set 24

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


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SiO2-Nanofab-280 C Step 1 Step 2 Research group

Usage

frequency (no.

times)

Pressure set 2500 250 Dr. Chiao 2

Pressure read

ICP power set 300

ICP power read

ICP REF read

RIE power set

RIE power read

RIE REF read

Temp set 350 350

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set 179

N2O read

N2 set 250 250

N2 read 2 2

SiH4/Ar set 5

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


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SiO2-Nanofab-550 Step 1 Step 2 Research group

Usage

frequency (no.

times)

Pressure set 900 250 Dr. Zhou 5

Pressure read Dr. Chiao 7

ICP power set 75

ICP power read

ICP REF read

RIE power set 30

RIE power read

RIE REF read

Temp set 200 200

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set 160

N2O read

N2 set 225 250

N2 read 2

SiH4/Ar set 24

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


29

a_Si_KJL Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read

ICP power set 100

ICP power read

ICP REF read

RIE power set 15

RIE power read

RIE REF read

Temp set 300 300

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 250

N2 read 2

SiH4/Ar set 20

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


30

a_Si_KJL1 Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read

ICP power set 400

ICP power read

ICP REF read

RIE power set 35

RIE power read

RIE REF read

Temp set 300

Temp read


Process time read

NH3 set

NH3 read

CF4 set 100

CF4 read

N2O set 10

N2O read

N2 set 250

N2 read 2 2

SiH4/Ar set

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


31

a-Si_Shyiq Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read

ICP power set 100

ICP power read

ICP REF read

RIE power set

RIE power read

RIE REF read

Temp set 200

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 250

N2 read 2 2

SiH4/Ar set 20

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


32

a-Si_Sookim Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read

ICP power set

ICP power read

ICP REF read

RIE power set

RIE power read

RIE REF read

Temp set 50

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 250

N2 read 2 2

SiH4/Ar set 30

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


33

a-

SiO2_Nanofab_550_Hung Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read

ICP power set 60

ICP power read

ICP REF read

RIE power set 30

RIE power read

RIE REF read

Temp set 350

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set 100

N2O read

N2 set 225 250

N2 read 2 2

SiH4/Ar set 15

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


34

Halldor_SWs Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read

ICP power set 100

ICP power read

ICP REF read

RIE power set 15

RIE power read

RIE REF read

Temp set 450

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 250

N2 read 2 2

SiH4/Ar set 15

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


35

JM_oxide Step 1 Step 2 Research group

Usage

frequency (no.

times)

Pressure set 1000 250 Dr. Koh 5

Pressure read

ICP power set 500

ICP power read

ICP REF read

RIE power set

RIE power read

RIE REF read

Temp set 360

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set 179

N2O read

N2 set 250 100

N2 read 2 2

SiH4/Ar set 20

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


36

JM-Protect_A Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read

ICP power set

ICP power read

ICP REF read

RIE power set

RIE power read

RIE REF read

Temp set 100 200

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set 179 179

N2O read

N2 set 250 250

N2 read 2 2

SiH4/Ar set 20 20

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


37

JM-Protect_B Step 1 Step 2 Research group

Usage

frequency (no.

times)

Pressure set

Pressure read

ICP power set

ICP power read

ICP REF read

RIE power set

RIE power read

RIE REF read

Temp set 100 200

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set

N2 read 2 2

SiH4/Ar set

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


38

Nanofab-CLEAN Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read 1 1 Dr. Koh 55

ICP power set 400 Dr. Zhou 58

ICP power read Dr. Moon 6

ICP REF read Dr. Chiao 30

RIE power set 35 Dr. Harry stephanou 2

RIE power read

RIE REF read

Temp set 350 350

Temp read


Process time read

NH3 set

NH3 read

CF4 set 100

CF4 read

N2O set 10

N2O read

N2 set 250

N2 read 2 2

SiH4/Ar set

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


39

Si3N4-N2_Nanofab Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read 1 1

ICP power set 100

ICP power read

ICP REF read

RIE power set

RIE power read

RIE REF read

Temp set 350 350

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 250 250

N2 read 2 2

SiH4/Ar set 20

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


40

Si3N4-Nanofab Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read 1 1 Dr. Zhou 9

ICP power set 100 Dr. Moon 1

ICP power read Dr. Chiao 11

ICP REF read Dr. Harry stephanou 1

RIE power set

RIE power read

RIE REF read

Temp set 300 300

Temp read


Process time read

NH3 set 50

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 250 250

N2 read 2 2

SiH4/Ar set 20

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


41

SiO2_Nanofab Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read 1 1 Dr. Zhou 59

ICP power set 75 Dr. Moon 2

ICP power read Dr. Chiao 6

ICP REF read Dr. Harry stephanou 1

RIE power set 30

RIE power read

RIE REF read

Temp set 350 350

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set 160

N2O read

N2 set 225 250

N2 read 2 2

SiH4/Ar set 24

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


42

a-Si (P type) Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read 1 1

ICP power set 250

ICP power read

ICP REF read

RIE power set 10

RIE power read

RIE REF read

Temp set 310 310

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set

N2 read

SiH4/Ar set

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set 210

SiH4/Ar/B read


43

Wet_clean_Nanofab Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read 1 1

ICP power set

ICP power read

ICP REF read

RIE power set

RIE power read

RIE REF read

Temp set 100 100

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 100 100

N2 read 2 2

SiH4/Ar set

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


44

ABORT_PURGE PG Step 1 Step 2 Research group

Usage

frequency (no.

times)

Pressure set 250

Pressure read 1 1

ICP power set

ICP power read

ICP REF read

RIE power set

RIE power read

RIE REF read

Temp set 350

Temp read

Process time set 180

Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 250

N2 read 2 2

SiH4/Ar set

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


45

a-Si (N-type) Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read

ICP power set 275

ICP power read

ICP REF read

RIE power set 10

RIE power read

RIE REF read

Temp set 300 300

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 250

N2 read 2 2

SiH4/Ar set

SiH4/Ar read

SiH4/Ar/P set 200

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


46

a-Si triode Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read

ICP power set 75

ICP power read

ICP REF read

RIE power set 30

RIE power read

RIE REF read

Temp set 300 300

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 250

N2 read 2 2

SiH4/Ar set 200

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


47

a-Si_Nanofab Step 1 Step 2 Research group

Usage

frequency (no.

times)

Pressure set 800 250 Dr. Zhou 2

Pressure read Dr. Magnusson 20

ICP power set 100

ICP power read

ICP REF read

RIE power set 15

RIE power read

RIE REF read

Temp set 300 300

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 250

N2 read 2

SiH4/Ar set 20

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


48

a-Si_nanowire_Hung Step 1 Step 2 Research group

Usage

frequency (no.

times)

Pressure set 1100 250 Dr. Chiao 5

Pressure read

ICP power set 20

ICP power read

ICP REF read

RIE power set

RIE power read

RIE REF read

Temp set 420 420

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 250

N2 read 2 2

SiH4/Ar set 30

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


49

CHAMBER-PRE-VENT Step 1 Step 2 Research group

Usage

frequency (no.

times)

Pressure set 10 250

Pressure read

ICP power set

ICP power read

ICP REF read

RIE power set

RIE power read

RIE REF read

Temp set 50 50

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 250

N2 read 2 2

SiH4/Ar set

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


50

h-BN Test Step 1 Step 2 Research group

Usage

frequency (no.

times)


Pressure read 1 1

ICP power set 70

ICP power read

ICP REF read

RIE power set 7

RIE power read

RIE REF read

Temp set 350 350

Temp read


Process time read

NH3 set

NH3 read

CF4 set

CF4 read

N2O set

N2O read

N2 set 22 250

N2 read 2

SiH4/Ar set

SiH4/Ar read

SiH4/Ar/P set

SiH4/Ar/P read

SiH4/Ar/B set

SiH4/Ar/B read


51

5 NANOFAB RESPONSE PLAN

NANOFAB Research and Teaching Facility

500 South Cooper Street

University of Texas at Arlington

Hazardous Material Gas Release Response Procedure for UTA

Police Department and EH&S Staff

1. When the UTA Police Communications Center receives a Fire Alarm for

NANOFAB, the dispatcher shall check the alarm received and verify if it is a Fire

Alarm or a Gas Detection Alarm.

2. Upon verification of a GAS alarm, the dispatcher shall advise the responding police

units that the alarm is a Hazardous Material Response call and Officers are not to

enter the building for any reason. A Police Supervisor shall be dispatched to the

scene.

3. The Arlington Fire Department shall be dispatched via a 911 call for a Hazardous

Material Gas Leak at UTA NANOFAB building, 500 South Cooper Street.

4. The Responding Officer(s) shall try to respond from the upwind direction. (Look for

wind direction by observing tree leaves, flags or banners in the area.) A wind sock

will be installed on the South East corner of the roof to verify wind direction.

5. The responding Police Supervisor will establish a Command Post at an appropriate

location based on the conditions at the scene.

6. The first responding officer shall verify if the orange strobe lights on the outside of

the building have been activated and listen to the emergency message broadcast on

the outside speakers to confirm a Gas Detection Alarm. Once field confirmation is

made, the responding police units shall set up an inner perimeter. No one is to enter

the building until the arrival of the Arlington Fire Department.

7. Any occupants of the building that may have been exposed to the gas shall be

directed to a designated location (Decon Site) upwind from the building (location to

be determined based on conditions at the time) so paramedics can evaluate their

condition. If any victims are transported to a Hospital, Arlington Fire Department

shall obtain the MSDS for the gas released from the Knox Cabinet on the outside of

the building and provide to the Paramedic. (Not installed yet. Police to provide until

installed)

8. Mr. Jim Florence, the NANOFAB Manager, or a staff member shall brief the Police

Supervisor or first arriving police unit the known facts relative to the incident. The

Officer shall relay the information to dispatch so Arlington Fire Department can be

updated while responding.

9. EH&S staff shall be notified during working hours to respond to the Command Post

with the Police to control the scene until the arrival of the Fire Department. The

Incident Command and Unified Command Systems will be utilized to manage the

incident.

10. After normal working hours the on-call EH&S person shall be notified to respond.

Documents

TRION PECVD SYSTEM OPERATING MANUAL - UTA PECVD.pdf · The TRION ORION PECVD (plasma enhanced chemical vapor deposition) can produce uniform plasma-deposited Silicon Dioxide ( SiO