Vilquin Gautier

7/30/2019 Vilquin Gautier

1/21

1

FCMN, Albany (NY), USA B. Vilquin, B. GautierMay 13th, 2009

Scaling Effects on Ferro-Electrics: Application

in Nanoelectronics and Characterization

Bertrand Vilquin & Brice GAUTIER

Lyon Institute of Nanotechnologies

Universit de Lyon

7/30/2019 Vilquin Gautier

2/21

2

FCMN, Albany (NY), USA B. Vilquin, B. GautierMay 13th, 2009

Ferroelectrics: dielectrics crystals which a spontaneous electricpolarization due to atomic deplacement in the crystal structure

The direction of polarization can be reoriented by an external electricl field:

=> domains where the spontaneous polarization is parallel

=> hysteresis loops

Introduction: ferroelectricity

Direction polarization can be used tostore information: memories

Bit 0: Pr- 2 atomic stable positions

in the crystal field

Bit 1: Pr+

=> Non volatile data storage device

7/30/2019 Vilquin Gautier

3/21

3

FCMN, Albany (NY), USA B. Vilquin, B. GautierMay 13th, 2009

At nano-scale, strong influence of the surface energy, depolarization field, etc.

=> Modification of polarization, dielectric constant, Curie temperature, etc.

Nano-ferroelectric: properties

E. Erdem et al.,

J. Phys.: Condens.

Matter 18, 3861

(2006)

What is the critical thickness to observe ferroelectricity in thin films?

7/30/2019 Vilquin Gautier

4/21

4

FCMN, Albany (NY), USA B. Vilquin, B. GautierMay 13th, 2009

Nano-ferroelectric: still ferroelectric?

Glinchuk M.D., Morozovska A.N., Eliseev E.A., J. Appl. Phys. 99, 114102 (2006)

Triscone's group (Geneva): measurement of ferroelectricity down to 2.4 nm

(PZT film) at room temperature.

Deformation of the film due to mismatch between the parameters of the filmand substrate Um = (b a)/b (a, b are their lattice constants) induce built-inelectric field.

=> This field lead to electret state in thinner film.

0 5 10 15 20 25 30

0

200

400

600

800

1000

Film thickness h (lattice constants)

Temp

eratureT(K)

Electret

Self-polarizedferroelectric phase

0 100 200 300 400 500

1.03

1.04

1.05

1.06

1.07

Film thickness h (A0)

Tetragonality

c/a

Um=0

Um

7/30/2019 Vilquin Gautier

5/21

5

FCMN, Albany (NY), USA B. Vilquin, B. GautierMay 13th, 2009

Recent effort to predict properties of nano-ferroelectricsusing ab initio modelsGroups of Vanderbilt, Resta, Krakauer, etc.

Nano-ferroelectric: new properties

Polarization vortex in ferroelectricABO3

dots by Virtual CrystalApproximation (VCA)Bellaiche, PRL 97 (2006)

However new properties absent in bulk materials appear in nano-ferroelectrics.

Superlattices of SrTiO3

and PbTiO3

=> Unususal polarization behaviour,modification of T

C...

Dawber, PRL 95 (2005)

7/30/2019 Vilquin Gautier

6/21

6

FCMN, Albany (NY), USA B. Vilquin, B. GautierMay 13th, 2009

Ferroelectric Radoom Access Memories: similar to DRAM but with aferroelectric layer instead of a dielectric layer

Non volatile memories: data storage through

the remnant polarization

Commercial production already at 350 nm (Fujitsu)

and 130 nm (Texas Instrument)

Nano-ferro devices: FeRAM

32 Mb SAMSUNG FeRAM

Same functionnality as Flash

Memories but:

Lower power usage

Faster write performance

Greater maximum of cycles

7/30/2019 Vilquin Gautier

7/21

7

FCMN, Albany (NY), USA B. Vilquin, B. GautierMay 13th, 2009

Ferroelectric Field Effect Transistor: similar to MOSFET, the gate oxide is aferroelectric

Depending on remnant polarization, electrons are depleted or accumulated

Non volatile memories

Decrease ofstand-by loss ( vampire power )

Only few perovskite oxides (big class of ferroelectric materials) are suitable forgrowth on silicon

Nano-ferro devices: FeFET

7/30/2019 Vilquin Gautier

8/21

8

FCMN, Albany (NY), USA B. Vilquin, B. GautierMay 13th, 2009

From 2D film to 1D dots:

Focused Ion Beam etching, e-beam lithography, imprint

High-precision positioning

Size control but limited in resolution

Damage the nano-structures (layer ~10 nm)

Time-consuming

Nano-fabrication: Top-down

M. Alexe, Appl. Phys. Lett. 75, 1999

7/30/2019 Vilquin Gautier

9/21

9

FCMN, Albany (NY), USA B. Vilquin, B. GautierMay 13th, 2009

Self-assembled process:

Formation of arrays of ferroelectric nano-crystals on a substrate

As for semi-conductor quantum dots growth, balance between interface,

substrate and film energies

Avoid the processing damage duringFIB patterning

Smaller dimensions structures thanthose obtained with top-down processes

Nano-fabrication: Bottom-up

PbTiO3

grown on SrTiO3

withdifferent crystallineorientationsNomura, Appl. Phys. Lett. 86, 2005

Nano-wires fabrication:

Hydro-thermal decomposition ofbimetallic precursorWell-isolated single-crystalline BaTiO3 rods

with diameters from 5 to 60 nm

and several m-longPark, Adv. Mat. 15, 2003

7/30/2019 Vilquin Gautier

10/21

10

FCMN, Albany (NY), USA B. Vilquin, B. GautierMay 13th, 2009

The AFM as a tool for electric characterization at the nanoscale :

A conductive tip can => a nanometric electrode

Piezoelectric motion controller => positioning with a nanometric resolution

Examples : Electric Force Microscopy (EFM : electric field)

Kelvin Force Microscopy (KFM : potential)

Nanoscale characterization: AFM

Characterization of the electrical properties of thedielectrics and ferroelectrics:

Current measurements

Capacitive measurements

Piezoelectric measurements

7/30/2019 Vilquin Gautier

11/21

11

FCMN, Albany (NY), USA B. Vilquin, B. GautierMay 13th, 2009

Piezoresponse Force Microscopy

The reduction of the size of devices

using ferroelectric layers is achallenging problem forcharacterization

Characterization provides crucial feed

back to growers

Numerous size effects are expected in ferroelectrics materials :

Coercive voltages

Remnant polarisation

Dielectric constant

Smallest domain size ?

Smallest thickness allowing ferroelectricity ?

Piezoelectric constants

Ferroelectric

polarisation

Ferroelectricmemory

gate

Must be measured at the nanoscale

P

x

y

z

7/30/2019 Vilquin Gautier

12/21

12

FCMN, Albany (NY), USA B. Vilquin, B. GautierMay 13th, 2009

PFM: principle

Thin ferroelectric film

Bottom electrode

Substrate

PhotodiodeLaser

Lock in amplifier

REF

AMPLITUDE x PHASE

180 0

f

P

P

Antiparallel domains vibrate with an opposite phase

Inverse piezoelectric effect => vibration of the surface due to the application of analternating voltage.

All ferroelectrics are piezoelectric

Topography + verticalpiezoelectric vibration (very

weak compared to topography)

7/30/2019 Vilquin Gautier

13/21

13

FCMN, Albany (NY), USA B. Vilquin, B. GautierMay 13th, 2009

Quasi 3-D mapping of domains

Mapping of ferroelectric domains(component perpendicular to thesurface) in LiNbO3. The spatialresolution is nanometric.

B. Gautier, V. Bornand, Thin Solid Films 515(4-

5):1592, 2006

P

zx

y

z

Pin-plane

out of-plane The in-plane

component in the y-direction is alsoaccessible

The in-plane componentparallel to the cantilever (xdirection) remains inaccessible

7/30/2019 Vilquin Gautier

14/21

14

FCMN, Albany (NY), USA B. Vilquin, B. GautierMay 13th, 2009

Quasi 3-D mapping of domains

Mapping of ferroelectric domains(component perpendicular to thesurface) in LiNbO3. The spatialresolution is nanometric.

in-plane

out of-plane The in-plane

component in the y-direction is alsoaccessible

z

P P

P

zx

y

The in-plane componentparallel to the cantilever (xdirection) remains inaccessible

7/30/2019 Vilquin Gautier

15/21

15

FCMN, Albany (NY), USA B. Vilquin, B. GautierMay 13th, 2009

Creation of domains

Creation of any polarisation patternApplications for the Surface Acoustic Waves Devices (SAW)

=> replacement of the top electrodes

f ~VR

T

=> 20 GhzT= 200 nm

C. Thiebaud, D. Charraut, B. Gautier, J.C.Labrune, Ann. Chim. ScL Mat, 26:145 (2001)

Local switchingof the polarisation by applying asufficient voltage between thetip and the sample (here 10 V)

S. Ballandras, B. Gautier, D. Hauden and J.-C. Labrune.Patent USA Canada - Europe 0009246, 2001.

7/30/2019 Vilquin Gautier

16/21

16

FCMN, Albany (NY), USA B. Vilquin, B. GautierMay 13th, 2009

Applications for ferroelectric memories

Evolution of the domain size with the durationof the voltage pulse

B. Gautier, C. Soyer, E. Cattan, D. Remiens and J.-C. LabruneIntegrated Ferroelectrics 269:219, 2002

P. Paruch et al. Appl. Phys. Lett., Vol.

79, No. 4, 23 (2001)

Microstructure of the film, voltage amplitude,duration, geometry... influence the final size of thedomain => density of integration