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/ Slide 1Version 1.0Maarten Hoeks
System integration of Electronics
Ernst Vrolijks
June 2010
/ Slide 2
Agenda
Introduction Semiconductor lithography The challenge for Electronic Development (EDEV)
EDEV technology What do we do
EDEV way of working How do we do it? Summary
/ Slide 3
Moore’s law
In 1965 Gordon Moore predicted that chip capacity would double every 18-24 months. G. Moore, ”Cramming more components onto integrated circuits”, Electronics, Vol. 38, Nb. 8 (1965)
Itanium 2 (9 MB core)
Itanium 2
Pentium 4
Pentium III
Pentium IIPentium
486
386286
8086
808080084004
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1960 1970 1980 1990 2000 2010
year
tran
sist
ors
Over 40 years his prediction has been true.
/ Slide 4
Why Shrinkage
Shrinking minimum feature size offers simultaneous:
smaller chip size => cost reduction
faster transistors => performance enhancement
lower dissipation => performance enhancement
Simultaneous increasing of performance while decreasing of price has fuelled IC industry over last 30 years.
In 1978 a commercial flight between New York and Paris cost ~ 900$ and took seven hours. If Moore’s law would be applied to the aircraft industry this flight would now cost one cent and take less than one second.
/ Slide 5
Shrink drives cost per function and market growth
Source: Gartner Dataquest, iSuppli, ASML
2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010
NAND cost, $ / GB
NAND size, GB
0.01
0.10
1.00
10.0
100
1,000
10,000
Projected cross-over
HDD - NAND, GB
60-80 GB2-16 GB 80-150 GB1 GB 4 GB 8 GB 10-20 GB
/ Slide 6
ASML technology roadmap: photons forever.Required k1 as function of resolution, wavelength, and NA
65 45 32 22 16 11
year 2005 2007 2009 2011 2013 2015l [nm] NA
0.93 0.31
1.20 0.40 0.28
193 1.35 0.31 0.22 0.15
1.55 0.26 0.18
13.5 0.25 0.59 0.41
0.35 0.57 0.41
0.45 0.53 0.37
half pitch
Enable shrink by combination of• Wavelength reduction• NA increase• k1 reduction
/ Slide 7
State-of-art water based immersion l=193nm, NA=1.20
65 45 32 22 16 11
year 2005 2007 2009 2011 2013 2015l [nm] NA
0.93 0.31
1.20 0.40 0.28
193 1.35 0.31 0.22 0.15
1.55 0.26 0.18
13.5 0.25 0.59 0.41
0.35 0.57 0.41
0.45 0.53 0.37
half pitch
45 nm L&S
/ Slide 8
Three options for 32 nm half-pitch
65 45 32 22 16 11
year 2005 2007 2009 2011 2013 2015l [nm] NA
0.93 0.31
1.20 0.40 0.28
193 1.35 0.31 0.22 0.15
1.55 0.26 0.18
13.5 0.25 0.59 0.41
0.35 0.57 0.41
0.45 0.53 0.37
half pitch
Double patterning water immersion
EUV
sngl patterningNon-water
Implication: Complexity increases
/ Slide 9
The EDEV Challenge ...
EDEV's challenge =
Fast & Predictable integration
With increasing system complexity
Multiple parallel developments
/ Slide 10
What do we do?Technology
/ Slide 11
Basic Principle
Reticle
Reticle stage
WaferWafer stage
Projection Lens
/ Slide 12
The ASML Product
Wafer Stage(Expose)
ProjectionOptics
Wafer Stage (Measure)
IlluminationOptics
ReticleHandler
WaferHandler
UserInterface
ReticleStage
MeasurementSystems
/ Slide 13
Deliverables of the Electronic Development (I)
Local electronics
Electronic functions in cabinets
Remote Electronics Cabinets
/ Slide 14
Business Drivers
Source: ICE
Business Drivers
Overlay
Productivity
Time To Market
Critical
Dimension
/ Slide 15
Business Drivers
Business Drivers
Overlay
Productivity
Time To Market
Organization
Process
Predictable&fast
integration
Critical
Dimension
and Electronics Integration
/ Slide 16
How do we do it ?Organization/Process
/ Slide 17
PGP:EDEV Participation
System :
Subsystem:
Module :
Specification Design Test & Int.
Specification Design Test & Int.
Specification Design Test
E-Architect :
E-Designer :
E-Integrator :
PRS, SPS SDS TPS, TAR, ITP
TPS, TAR, ITPEDS, HSIEPS
TPS, TAREDSEPS
V-Model
FeasibilitySystem
DefinitionSubsystem Definiton
Integration ValidationRealization
/ Slide 18
Subsystems Range: upto 50?
Machine
12 NC’s Range: 50.000 – 100.000
System Breakdown, coping with complexity
Issues:•Interfaces not properly defined•Long term ownership not well defined• Commonality not properly managed
/ Slide 19
AT:12X0 bodySplit the machine in building blocks
BB
BB
BB
BB
/ Slide 20
Arrange blocks in logical, functional clustersF
C W
afer
Han
dlin
g
FC
Illu
min
atio
n
/ Slide 21
Functional Cluster ownership
Functional Cluster Owner: Knows what is in FC now Controls what is currently
happening in FC Plans what will happen in
FC in the futureF
C I
llum
inat
ion
/ Slide 22
Subsystems Range: upto 50?Building blocks
Range: 100 - 1000
Machine
Functional Clusters Range: 20-40
12 NC’s Range: 50.000 – 100.000
System Breakdown based on FC’s
/ Slide 23
From platforms to products
Product I.A
Product I.B
Platform I
+
=
=
SelectableBuilding Blocks
Product II.A
Product II.B
Platform II Platform III
+
=
=
Over time building blocks evolve leading to ever increasing platform capabilities.
Products can be realized by changing only selected building blocks within a given platform
/ Slide 24
PGP:EDEV Participation
System :
Subsystem:
Module :
Specification Design Test & Int.
Specification Design Test & Int.
Specification Design Test
E-Architect :
E-Designer :
E-Integrator :
PRS, SPS SDS TPS, TAR, ITP
TPS, TAR, ITPEDS, HSIEPS
TPS, TAREDSEPS
FeasibilitySystem
DefinitionSubsystem Definiton
Integration ValidationRealization
classic V-approach squeezes component level
development
Early start of development at
all levels to meet time to
market Early delivery of 1st unit for
system integration,
parallel maturing for
volume deliveries
/ Slide 25
Summary
Semiconductor industry is characterized by Moore’s law. Lithography is key enabler. Electronic Development plays a key role in realizing ever
increasing system performance. Processes and organization of Electronic Development are
“designed” to support the development of complex (multidisciplinary) products.
It more complicated to have fast & predictable integration
Miscommunication =
# Problems during Integration
/ Slide 26
There is much Moore ...