24
Advancements For Sub 45nm Advancements For Sub 45nm Fixed Abrasive STI CMP John Gagliardi Andre Zagrebeln John Gagliardi, Andrey Zagrebelny, Bill Joseph, Larry Zazzera 3M Company 3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA 3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

zazzera.Larry Zazzera 3M

Embed Size (px)

DESCRIPTION

 

Citation preview

Page 1: zazzera.Larry Zazzera 3M

Advancements For Sub 45nmAdvancements For Sub 45nm Fixed Abrasive STI CMP

John Gagliardi Andre ZagrebelnJohn Gagliardi, Andrey Zagrebelny, Bill Joseph, Larry Zazzera

3M Companyp y

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 2: zazzera.Larry Zazzera 3M

Outline• Background

– Timeline of developments leading to Advancements forTimeline of developments leading to Advancements for Sub 45 nm FA STI CMP

– The FA Process and Outstanding Planarization • Current FA STI CMP Roadmap• Current FA STI CMP Roadmap

– 65 nm, 45 nm and Sub 45 nm• Advancements for 45 nm and sub 45 nm

– Chemistry – Abrasive– CMP process and performanceCMP process and performance

• Summary and Conclusion

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 3: zazzera.Larry Zazzera 3M

Microreplicated Fixed Abrasive

30 µm hexagonal composites of ceria and organic bond

125 µm

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 4: zazzera.Larry Zazzera 3M

3M Laboratory’s Reflexion Web™ CMP Polisher

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 5: zazzera.Larry Zazzera 3M

Development Timelines Leading to advancements for sub 45 nm2001 – Third Generation of FA Development was completed

• Close collaboration with tool builder and semiconductor fabs2002 - AMAT’s Reflexion™ Web Ready

• FA production tool available to Industry Numerous Technical papers published by

• 2-Step process developed• Selective Chemistry with FA

2003 – FA In Production3 F b t k FA i t d ti

industry leaders: UMC, Infineon, IBM, Cypress, Hyundai, AMD, 3M, AMAT, SEMI

• 3 Fabs take FA into production2004/2005 – Expanding Production

• IBM and UMC publish prominent technical papers2006 Sub 45nm FA STI CMP Development begins

Europa, Hyundai, VIT and others

2006 – Sub 45nm FA STI CMP Development begins• New abrasives, chemistry and subpads• Low pressure surfactant process taken into production at 45nm

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 6: zazzera.Larry Zazzera 3M

Process Approach to attain superior planarizationplanarization

3M SWR550 FASelective ChemistryNo Conditioning

BuffNo Conditioning5k-10k wafer Life

DI Water BuffPolitex Pad

P3

Pre-Planarization

Fixed Abrasive

Conventional Pre

P1 P2Web P1 Pre-Planarize

P2 Clear and StopP3 Remove Ceria

FA ProcessConventional Pre-Planarization3M Diamond Conditioner

P3 Remove Ceria

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 7: zazzera.Larry Zazzera 3M

Planarization Comparison• Outstanding Planarization

– Low trench oxide dishing/range; low nitride erosion/range

hing

Reference: B. Reinhold, J. Groschopf, 2006 International Conference on Planarization/CMP Slurry

ized

Dis

h Technology (2006 ICPT), October 12-13, 2006y

OnlySlurry + FA

Nor

mal

i

8X

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 8: zazzera.Larry Zazzera 3M

NU and Process Stability• Exceptional WIWNU

50-150 Å nitride range (<5% on 3mm EE), depends mostly upondepends mostly upon incoming nitride ranges.

• Planarization Efficiency3-10x greater than gconventional pad/slurry processes; maximizes efficient removal of surface “peaks” and minimizes loss on surface “valleys ”loss on surface valleys.

• Process StabilityQuick start-up from tool idle Long consumable life Reference: J Gagliardi 2006 InternationalLong consumable life

5k-10k Wafers

Reference: J. Gagliardi, 2006 International Conference on Planarization/CMP Technology (2006 ICPT), October 12-13, 2006

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 9: zazzera.Larry Zazzera 3M

Electrical Field Oxide ThicknessTraditional Slurry vs Fixed Abrasive STI CMPTraditional Slurry vs Fixed Abrasive STI CMP

1.2

Oxid

e

Traditional Slurry

Ref: “Using Fixed Abrasives in a Production Process for 200 mm STI Polishing,” Huang, C. K., Gagliardi, J. J., Gleason, E., 16th CMP User’s Mtg Proc Munich Apr 7 2006

1.1

rica

l Fi

eld

Slurry User s Mtg. Proc., Munich, Apr. 7, 2006,

0.9

1

zed

Ele

ctr

Fixed Abrasive

0.8

No

rmaliz

1 2 3 4 5 6 7 1 2 3 4 5 6 7 8 9 10 11 12 13

0.70 200 400 600 800 1000

D t P i t

1 2 3 4 5 6 7 1 2 3 4 5 6 7 8 9 10WAFER

11 12 13

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Data Point

Page 10: zazzera.Larry Zazzera 3M

Additional Characteristics• Selectivity

~ 200:1 (topography vs. planarized film)planarized film)

~ 1.2:1.0 (oxide to nitride.)

S f S• Self-StoppingHigh insensitivity to

overpolish yields a o e po s y e ds awide process window.

• Product PerformancePerformanceProduction-Proven

within-roll and roll-to-roll consistency

Reference: Y. Moon, A. Kapur, R. Venigalla, L. Economikos, 2006 International Conference on Planarization/CMP Technology (2006 ICPT) O t b 12 13 2006

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

roll consistency. ICPT), October 12-13, 2006

Page 11: zazzera.Larry Zazzera 3M

FA STI CMP Roadmap 65nm 45nm and Sub 45nm65nm, 45nm and Sub 45nm

2011 20122006

65 nm Manufacturing

2007 2008 2009 2010300 mm

45 nm Manufacturing

45 nm Process Dev.

65 nm Manufacturing

32 D l t 32 P D l t32 nm Development 32 nm Process Development

ChemistrySWR 521 & 542

SWR 548 & 550Subpad Improvements

Nanoceria Abrasives

Advanced FEOL Applications

200 mm

p p

Sub 250 nm Manufacturing

200 mm

R14 FA Rotary Pad

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

2010 2011 20122006 2007 2008 2009

Page 12: zazzera.Larry Zazzera 3M

Advancements for 45nm and sub 45nm

• Chemistry– Surfactant introduced to polishing chemistry

• AbrasiveCurrent work with nano ceria– Current work with nano-ceria

• Size, Shape, Loading– Fixed Abrasive Topography

• Shape Density Size• Shape, Density, Size

• Process Improvements– Reduced Pressure Polishingg– Higher throughput– Lower Increments

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 13: zazzera.Larry Zazzera 3M

Advancements for 45nm and sub 45nmChemistryAbrasive

Surfactant Added Nano Ceria

Abrasive

Standard Polish

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 14: zazzera.Larry Zazzera 3M

Advancements for 45nm and sub 45nmAb iAbrasive

Current work with nano-ceria - Size, Shape, LoadingFixed Abrasive Topography - Shape, Density, Sizep g p y p , y,

548, 550 Ceria, 135 nm521 & 542 Ceria, 150 nm

Multiple samples show acceptable rate

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

p p p

Page 15: zazzera.Larry Zazzera 3M

Advancements for 45nm and sub 45nmProcess

• CMP process and performance improvement

Surfactant Chemistry allows much lower downforceSurfactant Chemistry allows much lower downforce

- Lower downforce reduces defects 50-80% – Yieldallows FA to run at lower increments – Cost

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 16: zazzera.Larry Zazzera 3M

Advancements for 45nm and sub 45nmLow Pressure Reduces Defects

From a

KLA T SP2KLA-Tencor SP2

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 17: zazzera.Larry Zazzera 3M

Advancements for 45nm and sub 45nmLow Pressure Reduces DefectsLow Pressure Reduces Defects

Generally to levels equal to HSS slurryFABA 12 months in production HARP STI 45 nmA 12 months in production, HARP STI, 45 nmB Tested at 65 nm HDP STI and found

65% reduction in defects on product wafersReduction of IncrementHigher Rate (throughput)

C Tested at 45 nm HARP STI and found80% reduction in defects on product wafersReduction of IncrementHigher Rate (throughput)

D Tested at 65 nm HDP STI and found “ i ifi t” d ti i d f t d t f“significant” reduction in defects on product wafers

E Tested at 65 nm HDP STI and found 80% reduction in defects on product wafers

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 18: zazzera.Larry Zazzera 3M

Advancements for 45nm and sub 45nmAdvancements for 45nm and sub 45nmProcess

• CMP process and performance improvement

Lower pressures reduce subpad deflection

S f b i f t b d f d- Some fabs experience a fast-band near wafer edge known to be the result of the subpad deflection

Reference: Fixed Abrasive Direct STI CMP Allows Elimination of the Conventional Subpad Compromise for WIW and WID Ranges, J. J. Gagliardi, Abs. 915, 204th Elec. Chem. Soc., Oct. 12-17, 2003

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 19: zazzera.Larry Zazzera 3M

Advancements for 45nm and sub 45nmProcess

4000Edge Profiles vs. Process

3000

3500

4000 (

Å)

1500

2000

2500

nin

g O

xid

e

500

1000

1500

Rem

ain

3.5 psi - No Surfactant

1 5 psi + Surfactant0

80 85 90 95 100 Wafer Edge - mm

1.5 psi + Surfactant

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 20: zazzera.Larry Zazzera 3M

Advancements for 45nm and sub 45nmAdvancements for 45nm and sub 45nmProcess Summary

Benefit ImpactHi h R t Th h tHigher Rates ThroughputLower Defects YieldImproved Fastband YieldLower Increment CoCLower Increment CoC

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 21: zazzera.Larry Zazzera 3M

Summary and ConclusionSummary and Conclusion

• Advances in Chemistry and Abrasive have improved the performance of the FA approach to STI CMP, enabling 45 nm.

• A path to achieve key performance needs – lower defects – for sub-45 nm processlower defects for sub 45 nm process has been identified.

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 22: zazzera.Larry Zazzera 3M

OutlineBackground

Timeline of developments leading to Advancements for Sub 45nm p gFA STI CMPTwo Step “hybrid” FA Process and Outstanding Planarization

Current FA STI CMP RoadmapCurrent FA STI CMP Roadmap 65nm, 45nm and Sub 45nm

Advancements for 45nm and sub 45nmChemistryChemistry AbrasiveCMP Process and performance

S d C l iSummary and Conclusion

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA3 NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 23: zazzera.Larry Zazzera 3M

Future Venues for 3M CMP Updates

• August 2007, Clarkson University CAMP CMP Conference1. “ADVANCEMENTS IN PAD CONDITIONING FOR TUNGSTEN

CHEMICAL MECHANICAL PLANARIZATION”2. “RECENT ADVANCEMENTS IN FIXED ABRASIVE STI CMP”

• September 2007, Semicon Taiwan, Taipei, Taiwan1. “Mineral, Chemistry and Process Advancements to take Fixed Abrasive

STI CMP to sub 45 nm”

• October 2007, ICPT Conference, Dresden, Germany1. “Defectivity Improvement for Fixed Abrasive Based STI CMP in Advanced

Logic Technology ”Logic Technology 2. “Laser Scattering Technique for Characterizing Defects and Surface

Morphology in the Fixed Abrasive CMP ”

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA3 NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA

Page 24: zazzera.Larry Zazzera 3M

Advancements For Sub 45nmAdvancements For Sub 45nm Fixed Abrasive STI CMP

John Gagliardi Andre ZagrebelnJohn Gagliardi, Andrey Zagrebelny, Bill Joseph, Larry Zazzera

3M Companyp y

3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA3 NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA