All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

COMPONENTS: TRANSISTOR

PART NUMBER: 2SC5201

MANUFACTURER: TOSHIBA

Device Modeling Report

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

TRANSISTOR MODEL

PSpice model

parameter Model description

IS Saturation Current

BF Ideal Maximum Forward Beta

NF Forward Current Emission Coefficient

VAF Forward Early Voltage

IKF Forward Beta Roll-off Knee Current

ISE Non-ideal Base-Emitter Diode Saturation Current

NE Non-ideal Base-Emitter Diode Emission Coefficient

BR Ideal Maximum Reverse Beta

NR Reverse Emission Coefficient

VAR Reverse Early Voltage

IKR Reverse Beta Roll-off Knee Current

ISC Non-ideal Base-Collector Diode Saturation Current

NC Non-ideal Base-Collector Diode Emission Coefficient

NK Forward Beta Roll-off Slope Exponent

RE Emitter Resistance

RB Base Resistance

RC Series Collector Resistance

CJE Zero-bias Emitter-Base Junction Capacitance

VJE Emitter-Base Junction Potential

MJE Emitter-Base Junction Grading Coefficient

CJC Zero-bias Collector-Base Junction Capacitance

VJC Collector-base Junction Potential

MJC Collector-base Junction Grading Coefficient

FC Coefficient for Onset of Forward-bias Depletion Capacitance

TF Forward Transit Time

XTF Coefficient for TF Dependency on Vce

VTF Voltage for TF Dependency on Vce

ITF Current for TF Dependency on Ic

PTF Excess Phase at f=1/2pi*TF

TR Reverse Transit Time

EG Activation Energy

XTB Forward Beta Temperature Coefficient

XTI Temperature Coefficient for IS

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Ic

Vce

VAR

(X1,Y1)

(X2,Y2)

Y=aX+b

Reverse Early Voltage Characteristic

Reverse

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Reverse DC Beta Characteristic (Ie vs. hFE)

Measurement

Simulation

Emitter Current

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Ic

VceVAF

(X1,Y1)

(X2,Y2)

Y=aX+b

Forward Early Voltage Characteristic

Forward

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C-B Capacitance Characteristics E-B Capacitance Characteristics

Measurement

Simulation

Measurement

Simulation

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I1

0Adc

V1

6Vdc

v sence

0Vdc

Q1

Q2SC5201

0

I(vsence)

100uA 1.0mA 10mA 100mA

I(vsence)/ IB(Q1)

1.0

10

100

1.0K

Transistor hFE-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

1

10

100

1000

0.0001 0.001 0.01 0.1

IC(A)

hF

E

Measurement

Simulation

Comparison Graph

Ic(A) hFE

Error(%) Measurement Simulation

0.0001 115 113.234 -1.536

0.0002 125 125.846 0.677

0.0005 140 142.85 2.036

0.001 155 155.427 0.275

0.002 170 166.758 -1.907

0.005 180 177.506 -1.386

0.01 182 178.079 -2.154

0.02 172 164.595 -4.305

Circuit Simulation Result

Simulation Result

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

0

Q1

Q2SC5201

I1

0Adc

VC

F1

F5

IC(Q1)

100uA 1.0mA 10mA 100mA

V(Q1:c)

10mV

100mV

1.0V

10V

50V

VCE(Sat)-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 IC(A)

VC

E(S

AT

) (V

)

Measurement

Simulation

Comparison Graph

IC(A) VCE(sat)(V)

Error(%) Measurement Simulation

0.0001 0.081 0.082 1.235

0.0005 0.072 0.070 -2.778

0.001 0.070 0.067 -4.286

0.005 0.068 0.065 -4.412

0.01 0.070 0.070 0.000

0.05 0.130 0.136 4.615

Circuit Simulation Result

Simulation Result

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

0

F1

F5

VC

I1

0Adc

Q1

Q2SC5201

IC(Q1)

100uA 1.0mA 10mA 100mA

V(Q1:b)

10mV

100mV

1.0V

10V

VBE(Sat)-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

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0.01

0.1

1

10

0.0001 0.001 0.01 0.1

IC(A)

VB

E(S

AT

) (V

)

Measurement

Simulation

Comparison Graph

IC(A) VBE(sat)(V)

Error(%) Measurement Simulation

0.0001 0.520 0.537 3.269

0.0005 0.580 0.581 0.172

0.001 0.600 0.600 0.000

0.005 0.650 0.641 -1.385

0.01 0.690 0.665 -3.623

0.05 0.760 0.741 -2.500

Circuit Simulation Result

Simulation Result

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Time

16us 18us 20us 22us 24us 26us 28us 30us 32us 34us

IC(Q1) IB(Q1)

-200mA

-150mA

-100mA

-50mA

-0mA

50mA

100mA

150mA

200mA

Switching Characteristics Circuit simulation result

Evaluation circuit

Simulation result

Measurement Simulation %Error

tstg (us) 4.000 4.094 2.350

tf (us) 0.480 0.482 0.417

R3

5k

L1

50nH

L2

50nH

Q1

Q2SC5201

V2

250

R2

110.5

R1

100

0

V1

TD = 1.6us

TF = 50nsPW = 20usPER = 50us

V1 = -5

TR = 50ns

V2 = 6

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Switching Characteristics Reference

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I1

0Adc

0

Q1

Q2SC5201V1

10Vdc

V_V1

0V 2V 4V 6V 8V 10V

IC(Q1)

0A

20mA

40mA

60mA

80mA

100mA

Output Characteristics

Circuit Simulation Result

Evaluation Circuit

IB=0.1mA

0.2

0.5

2

1

3

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Output Characteristics Reference