All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

1

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET (Model Parameters) PART NUMBER: 2SJ657 MANUFACTURER: SANYO Body Diode (Model Parameters) / ESD Protection Diode

All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2

MOSFET MODEL

PSpice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Mobility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility

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3

Transconductance Characteristic

Circuit Simulation Result

Comparison table

-Id(A) gfs(S)

Error (%) Measurement Simulation

1 10.850 11.282 3.98

2 14.800 15.243 2.99

5 21.700 22.139 2.02

10 28.250 28.683 1.53

20 35.800 36.253 1.27

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V1

0Vdc

V2

-10

0

V3

0Vdc

U12SJ657

V_V1

0V -1.0V -2.0V -3.0V -4.0V -5.0V

I(V3)

0A

-10A

-20A

-30A

-40A

-50A

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit

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5

Comparison Graph Circuit Simulation Result

Simulation Result

-ID(A) -VGS(V)

Error (%) Measurement Simulation

1 2.600 2.616 0.62

2 2.700 2.691 -0.33

5 2.850 2.851 0.04

10 3.050 3.046 -0.13

20 3.350 3.352 0.06

50 4.100 4.062 -0.93

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6

0

U12SJ657

V3

0Vdc

VDS

0VdcV1

-10

V_VDS

0V -100mV -200mV -300mV -400mV -500mV -600mV

I(V3)

0A

-2A

-4A

-6A

-8A

-10A

-12A

-14A

-16A

Rds(on) Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID= -13A, VGS= -10V Measurement Simulation Error (%)

RDS (on) mΩ 39.000 39.000 0.00

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7

Time*1mA

0 10n 20n 30n 40n 50n 60n 70n 80n 90n 100n

V(W1:4)

0V

-1V

-2V

-3V

-4V

-5V

-6V

-7V

-8V

-9V

-10V

Gate Charge Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

VDD= -50V,ID= -25A ,VGS= -10V

Measurement Simulation Error (%)

Qgs nC 20.000 20.065 0.33

Qgd nC 20.000 20.031 0.15

Qg nC 110.000 82.018 -25.44

VDD

-50

I1TD = 0

TF = 5nPW = 600uPER = 1000u

I1 = 0I2 = 1m

TR = 5n -

+

W1

ION = 0uAIOFF = 1mAW

I225

0

D2Dbreak

U12SJ657

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8

Capacitance Characteristic

Simulation Result

VSD(V) Cbd(pF)

Error(%) Measurement Simulation

0.0 1030.000 1035.000 0.49

1.0 780.000 770.000 -1.28

2.0 615.000 620.000 0.81

5.0 412.000 416.000 0.97

10.0 285.000 287.000 0.70

15.0 220.000 223.000 1.36

20.0 190.000 188.000 -1.05

25.0 165.000 163.000 -1.21

30.0 155.000 152.000 -1.94

Simulation

Measurement

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9

Time

0.6us 0.9us 1.2us 1.5us 1.8us

V(U1:G) V(U1:D)/5

0V

-2V

-4V

-6V

-8V

-10V

-12V

-14V

Switching Time Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID= -13A, VDD= -50V VGS=0/-10V

Measurement Simulation Error(%)

td(on) ns 47.000 47.050 0.11

0

VDD-50Vdc

V2TD = 1u

TF = 5nPW = 10uPER = 20u

V1 = 0

TR = 5n

V2 = 20

U12SJ657

L2

50nH

R2

50

R1

50

L1

30nH

RL

3.85

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10

V2

-5V1

0

0

V3

0Vdc

U12SJ657

V_V2

0V -0.5V -1.5V -2.5V -3.5V -4.5V

I(V3)

0A

-10A

-20A

-30A

-40A

-50A

Output Characteristic

Circuit Simulation result

Evaluation circuit

VGS=-3V

-4 -6

-10

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11

VSDU12SJ657

0

Vsense

0Vdc

V_VSD

0.3V 0.6V 0.9V 1.2V

I(Vsense)

1.0mA

10mA

100mA

1.0A

10A

BODY DIODE SPICE MODEL Forward Current Characteristic

Circuit Simulation Result

Evaluation Circuit

All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

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Comparison Graph Circuit Simulation Result

Simulation Result

IDR(-A) VSD (-V)

%Error Measurement Simulation

0.001 0.492 0.489 -0.61

0.01 0.553 0.554 0.18

0.100 0.617 0.619 0.32

1.000 0.697 0.693 -0.57

2.000 0.723 0.721 -0.28

5.000 0.770 0.772 0.26

10.000 0.825 0.825 0.00

20.000 0.900 0.899 -0.11

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V1TD = 1.05us

TF = 10nsPW = 10usPER = 100us

V1 = -9.4v

TR = 10ns

V2 = 10.6v

R1

50

0

U12SJ657

Time

10.2us 10.6us 11.0us 11.4us 11.8us 12.2us

I(R1)

-400mA

-300mA

-200mA

-100mA

-0mA

100mA

200mA

300mA

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trj ns 53.000 53.358 0.68

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Reverse Recovery Characteristic Reference

Trj= 53.00 (ns) Trb= 84.00 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example

Measurement

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15

R1

0.001m

V1

0Vdc

0

U1

2SJ657

R2

100MEG

V_V1

0V -10V -20V -30V -40V -50V

I(R1)

0A

-2mA

-4mA

-6mA

-8mA

-10mA

ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic

Circuit Simulation Result

Evaluation Circuit

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Zener Voltage Characteristic Reference