SPICE MODEL of 2SK3301 (Standard+BDS Model) in SPICE PARK

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET PART NUMBER: 2SK3301 MANUFACTURER: TOSHIBA Body Diode (Model Parameter) /ESD Protection Diode


MOSFET MODEL

Pspice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Modility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility


0.00

0.10

0.20

0.30

0.40

0.50

0.00 0.10 0.20 0.30 0.40 0.50 0.60

DRAIN CURRENT ID (A)

GF

S (

s)

Measurement

Simulation

Transconductance Characteristic

Circuit Simulation Result

Comparison table

Id(A) gfs

Error(%) Measurement Simulation

0.050 0.143 0.145 1.469

0.100 0.205 0.205 0.098

0.200 0.286 0.291 1.608

0.500 0.427 0.431 0.937


V_V1

0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V

I(V3)

1.0mA

10mA

100mA

550mA

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit

0

U18

2SK3301

V2

10Vdc

V3

0Vdc

V1

0Vdc


1

10

100

1000

1 10 100

Gate-Source Voltage - Vgs (V)

Measurement

Simulation

Dra

in C

urr

en

t -

Id (

mA

)

Comparison Graph Circuit Simulation Result

Simulation Result

ID(mA) VGS(V)

Error (%) Measurement Simulation

5.000 3.300 3.448 4.488

10.000 3.450 3.541 2.626

20.000 3.640 3.672 0.865

50.000 3.940 3.933 -0.173

100.000 4.190 4.223 0.776

200.000 4.550 4.638 1.941

500.000 5.200 5.454 4.883


V_VDS

0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V

I(V2)

0A

200mA

400mA

500mA

Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID= 0.5A, VGS= 10V Measurement Simulation Error (%)

RDS (on) 15.000 15.000 0.000

VGS

10Vdc

0

VDS

0Vdc

V2

0VdcU22

2SK3301


Time*1mS

0 1n 2n 3n 4n 5n 6n 7n 8n 9n 10n

V(W1:3)

0V

2V

4V

6V

8V

10V

12V

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=100V,ID=45A ,VGS=10V

Measurement Simulation Error (%)

Qgs 1.000 nC 1.411 nC 41.100

Qgd 3.000 nC 2.558 nC -14.733

Qg 7.700 nC 5.570 nC -27.662

I1

TD = 0

TF = 10nPW = 600uPER = 1000u

I1 = 0I2 = 1m

TR = 10n

D1

Dbreak

V2

0Vdc

V1100Vdc

0

-

+W1

ION = 0uAIOFF = 100uA

W

ROFF = 1GRON = 1.0p

U28

2SK3301 I20.4545Adc


Gate Charge Characteristic Reference

0

2

4

6

8

10

12

0 1 2 3 4 5 6 7 8 9 10

GATE CHARGE Qg(nc)

GA

TE

VO

LT

AG

E

Vg

(V

)


Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)

Error(%) Measurement Simulation

0.100 82.197 82.000 -0.240

0.200 72.541 73.000 0.633

0.500 55.139 56.000 1.562

1.000 42.188 41.000 -2.816

2.000 24.628 24.000 -2.550

5.000 12.243 12.000 -1.985

10.000 4.950 5.000 1.010

20.000 2.241 2.200 -1.808

Simulation

Measurement


RL

800

R1

50

3

L1

30nH

2

0

U13

2SK3301

L2

30n

VDD

400Vdc

V2TD = 2u

TF = 7nPW = 10uPER = 20u

V1 = 0

TR = 6n

V2 = 10

Time

1.900us 1.950us 2.000us 2.050us 2.100us 2.150us1.854us

V(2) V(3)/40

0V

1V

2V

3V

4V

5V

6V

7V

8V

9V

10V

11V

12V

13V

14V

15V

Switching Time Characteristic


Evaluation circuit

Simulation Result

ID=0.5A, VDD=400V,VGS=10V Measurement Simulation Error(%)

ton 60.000 ns 59.477 ns -0.872

VGS

ID


0

U24

2SK3301V1

0

V2

0

V3

0Vdc

V_V2

0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V

I(V3)

0A

20mA

40mA

60mA

80mA

100mA

120mA

140mA

160mA

180mA

200mA

Output Characteristic


Evaluation circuit

3.8 V

4.2 V

4.0 V

VGS=3.6V


Output Characteristic Reference


V1(V1)

0V 0.5V 1.0V 1.5V

I(R1)

1.0mA

10mA

100mA

1.0A

BODY DIODE SPICE MODEL Forward Current Characteristic


Evaluation Circuit

V1

0Vdc U162SK3301

R1

0.01m

0


1

10

100

1000

0.00 0.50 1.00 1.50 2.00

Source-Drain Voltage VDS (V)

Dra

in R

evers

e C

urr

en

t I

DR

(m

A)

Measurement

Simulation

Comparison Graph Circuit Simulation Result

Simulation Result

IDR(A) VDS(V)

Measurement VDS(V)

Simulation %Error

1.000 0.516 0.518 0.388

2.000 0.546 0.545 -0.183

5.000 0.584 0.582 -0.342

10.000 0.612 0.610 -0.327

20.000 0.644 0.640 -0.621

50.000 0.688 0.686 -0.291

100.000 0.734 0.730 -0.545

200.000 0.788 0.786 -0.254

500.000 0.896 0.889 -0.781

1000.000 1.006 0.980 -2.584


Time

16us 20us 24us 28us 32us 36us 40us 44us 48us 52us

I(RL21)

-400mA

0A

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trj 0.900 us 0.902 us 0.222

trb 2.800 us 1.049 us -62.536

trr 3.700 us 1.951 us -47.270

U21

2SK3301

0

V21TD = 12.4uTF = 10n

PW = 20uPER = 60u

V1 = -9.38

TR = 10n

V2 = 10.60

RL21

50


Reverse Recovery Characteristic Reference

Trj=0.90(us) Trb=2.8(us) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example


0

R1

0.01mOpen

U19

2SK3301

V1

0Vdc

V_V1

0V 20V 40V 60V 80V 100V 120V 140V 160V 180V

I(R1)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

ESD PROTECTION DIODE SPICE MODEL

Zener Voltage Characteristic


Evaluation Circuit


Zener Voltage Characteristic Reference

Technology

SPICE MODEL of 2SK3301 (Standard+BDS Model) in SPICE PARK