SPICE MODEL of TPCP8402 (Professional+BDP Model) in SPICE PARK

All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

- 1 -

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET (Professsional) PART NUMBER: TPCP8402 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode


- 2 -

Circuit Configuration

7

21

8

43

56


- 3 -

MOSFET MODEL

PSpice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Mobility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility


- 4 -

G

+

-

+

-

S1

S

D

Q1

+-

+-

S2S

S

CGD

DGD

R1

10M

R2

10MEG

Equivalent Circuit


- 5 -

0.1

1

10

100

0 0.5 1 1.5 2

DRIAN CURRENT ID (A)

TR

AN

SC

ON

DU

CT

AN

CE

GF

S(s

)

Measurement

Simulation

P-Channel Model Transconductance Characteristic

Circuit Simulation Result

Comparison table

- Id(A) gfs

Error(%) Measurement Simulation

0.2 2.11 2.20 4.51

0.5 3.33 3.45 3.50

1 4.83 4.78 -1.06

2 6.67 6.62 -0.75


- 6 -

open

open

0

open

open

V1

-10Vdc

V3 0Vdc

VGS

0Vdc

U1 TPCP8402

R1

100MEG

0

open

V_VGS

0V -0.5V -1.5V -2.5V -3.5V -4.5V

I(V3)

0A

-1.0A

-2.0A

-3.0A

-4.0A

P-Channel Model

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit


- 7 -

0

1

2

3

4

0 1 2 3 4 5

- Gate - Source Voltage VGS (V)

- D

rain

Cu

rre

nt

ID (

A)

Measurement

Simulation

P-Channel Model Comparison Graph Circuit Simulation Result

Simulation Result

- ID(A) - VGS(V)

Error (%) Measurement Simulation

0 1.8000 1.8000 0.0000

0.1 1.9200 1.9036 -0.8542

0.2 1.9700 1.9580 -0.6091

0.5 2.0500 2.0670 0.8293

1 2.2000 2.1914 -0.3909

2 2.3500 2.3705 0.8723

3 2.5000 2.5104 0.4160

4 2.6300 2.6300 0.0000


- 8 -

V_VDS

0V -20mV -40mV -60mV -80mV -100mV -120mV -140mV -160mV -180mV

I(V3)

0A

-0.5A

-1.0A

-1.5A

-1.7A

P-Channel Model Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=-1.7A, VGS=-10V Measurement Simulation Error (%)

RDS (on) 60 m 60 m 0.000

VGS

-10Vdc

open

0

VDS

0Vdc

open

open

0

R1

100MEG

open

U1 TPCP8402

open

V3

0Vdc


- 9 -

Time*1mA

0 2n 4n 6n 8n 10n 12n 14n 16n

V(W1:4)

0V

-2V

-4V

-6V

-8V

-10V

P-Channel Model Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=-24V,ID=-3.2A Measurement Simulation Error (%)

Qgs 1.400 nC 1.394 nC -0.429

Qgd 2.700 nC 2.701 nC 0.037

Qg 14.000 nC 14.042 nC 0.300

-

+

W1

ION = 0AIOFF = 1mA

WI1

-4Adc

open

open

open

VD-24Vdc

open

0

open

0

I2TD = 0 Dbreak

D1

U1 TPCP8402

Ropen

100MEG


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P-Channel Model Capacitance Characteristic

Simulation Result

- VDS(V) Cbd(pF)


0.5 15.000 15.051 0.340

1 12.000 12.026 0.216

2 10.000 10.187 1.872

5 7.600 7.599 -0.014

10 6.000 6.124 2.070

20 5.000 5.059 1.175

30 4.500 4.566 1.463


- 11 -

Time

0.92us 0.96us 1.00us 1.04us 1.08us 1.12us

V(3)/1.5 V(L3:1)

8V

6V

4V

2V

0V

-2V

-4V

-6V

-8V

-10V

-12V

-14V

-16V

-18V

-20V

P-Channel Model Switching Time Characteristic


Evaluation circuit

Simulation Result

ID= -1.6A, VDD=-15V VGS=0/-10V

Measurement Simulation Error(%)

ton 12.000 ns 11.984 ns -0.133

VGS

ID

VGS

ID

0

V1TD = 1u

TF = 10nPW = 10uPER = 10m

V1 = 0

TR = 10n

V2 = -20

open

RL

8.82

U1 TPCP8402

L3

30nH

open

open

2

R1

4.7

0

open

3

VD-15Vdc

open

Ropen

100MEGR2

4.7

___ VGS ___ VOUT/1.5


- 12 -

0

R1

100MEG

open

U1 TPCP8402

open

V1

-10Vdc

open

open

0

V3 0Vdc

VGS

0Vdc

open

V_V1

0V -1.0V -2.0V -3.0V -4.0V -5.0V

I(V3)

0A

-2A

-4A

-6A

-8A

-10A

P- Channel Model Output Characteristic


Evaluation circuit

VGS=-2.3V

-2.5V

-2.6V

-2.7V

-2.8V

-10V

-6.0V

-3.5V

-4.5V


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V_V1

0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V

I(R1)

1.0A

10A

500mA

P-Channel Model Forward Current Characteristic


Evaluation Circuit

V1

0Vdc

Ropen

100MEG

0

open

open 0open

R1

0.01mU1 TPCP8402

openopen


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0.1

1

10

0 0.3 0.6 0.9 1.2 1.5

Drain - Source Voltage VDS (V)

Dra

in r

evers

e C

urr

en

t -

IDR

(A

)

Measurement

Simulation

P-Channel Model Comparison Graph Circuit Simulation Result

Simulation Result

IDR(A)

VSD(V)

%Error Measuremen Simulation

0.5 0.7300 0.7382 1.1214

1 0.7800 0.7830 0.3846

2 0.8350 0.8399 0.5868

5 0.9500 0.9547 0.4947

10 1.108 1.1062 -0.1625


- 15 -

0

V1

TD = 0

TF = 5.7nsPW = 1usPER = 50us

V1 = -9.6V

TR = 10ns

V2 = 10.8V

U2DP8402_P_PRO

R1 50

Time

0.98us 0.99us 1.00us 1.01us 1.02us 1.03us 1.04us 1.05us 1.06us 1.07us

I(R1)

-400mA

0A

400mA

P-Channel Model Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trj 8.600 ns 8.651 ns 0.593

trb 10.200 ns 10.200 ns 0.000

trr 18.800 ns 18.851 ns 0.271


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P-Channel Model Reverse Recovery Characteristic Reference

Trj=8.6 (ns) Trb=10.2 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example


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V_V1

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

I(R1)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

open

0

U1 TPCP8402

Ropen

100MEG

open

open

R1

0.01m

0

openV1

0Vdc

open

open

P-Channel Model ESD PROTECTION DIODE

Zener Voltage Characteristic


Evaluation Circuit


- 18 -

P-Channel Model Zener Voltage Characteristic Reference


- 19 -

S

DGD

G

R2

10MEGR1

10M CGD

+

-

+

-

S1

S

D

Q1

+

-

+

-

S2

S

Equivalent Circuit


- 20 -

0.1

1

10

100

0 0.5 1 1.5 2

DRIAN CURRENT ID (A)

TR

AN

SC

ON

DU

CT

AN

CE

GF

S(s

)

Measurement

Simulation

N-Channel Model Transconductance Characteristic


Comparison table

Id(A) gfs


0.2 2.11 2.13 1.08

0.5 3.33 3.31 -0.66

1 4.65 4.63 -0.46

2 6.67 6.43 -3.59


- 21 -

V_VGS

0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V

I(Vsense)

0A

1.0A

2.0A

3.0A

4.0A

5.0A

6.0A

7.0A

8.0A

N-Channel Model Vgs-Id Characteristic


Evaluation circuit

0

openVGS

0Vdc

U5

TPCP8402

open

R1

100MEG

open

V3

0Vdc

V1

10Vdc

open

0

open


- 22 -

0

2

4

6

8

0 1 2 3 4 5

Gate - Source Voltage VGS (V)

Dra

in C

urr

en

t ID

(A

)

Measurement

Simulation

Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)


0 2.3000 2.3000 0.0000

0.1 2.5200 2.5409 0.8294

0.2 2.6000 2.5971 -0.1115

0.5 2.7000 2.7096 0.3556

1 2.8300 2.8381 0.2862

2 3.0150 3.0227 0.2554

5 3.4000 3.3991 -0.0265

8 3.6800 3.6788 -0.0326


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V_VDS

0V 20mV 40mV 60mV 80mV 100mV 120mV 140mV 160mV 180mV

I(V3)

0A

0.2A

0.4A

0.6A

0.8A

1.0A

1.2A

1.4A

1.6A

1.8A

2.0A

2.2A

2.4A

N-Channel Model Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=2.1A, VGS=10V Measurement Simulation Error (%)

RDS (on) 38.000 m 38.000 m 0.000

V30Vdc

VDS

0Vdc

openVGS

10Vdc

0

R1

100MEG

open

open

open

0

U2

TPCP8402

open


- 24 -

-

+W1

ION = 0AIOFF = 1mA

W

0

open

open

U1

TPCP8402

open

VD24Vdc

Ropen

100MEG

open

I2TD = 0

I1

4AdcDbreakD1

Vsense

0

open

Time*1mA

0 4n 8n 12n 16n

V(W1:3)

0V

5V

10V

15V

N-Channel Model Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=24V,ID=4.0A Measurement Simulation Error (%)

Qgs 1.700 nC 1.698 nC -0.118

Qgd 2.400 nC 2.413 nC 0.554

Qg 14.000 nC 13.972 nC -0.200


- 25 -

N-Channel Model

Capacitance Characteristic

Simulation Result

VDS(V)

Cbd(pF)


0.1 140.0000 141.0000 0.7143

0.2 108.0000 107.5000 -0.4630

0.5 70.0000 69.5000 -0.7143

1 50.0000 49.8875 -0.2250

2 35.0000 34.6560 -0.9829

5 21.0000 20.9978 -0.0105

10 14.0000 14.5679 4.0563

20 9.5000 9.6499 1.5774

30 7.5000 7.3527 -1.9642

Simulation

Measurement


- 26 -

openopenRopen

100MEG

R1

4.7

R2

4.7 VD15Vdc

open

3

open2

open

RL

7.5

0

V1TD = 1u

TF = 10nPW = 10uPER = 10m

V1 = 0

TR = 10n

V2 = 20

0

L3

30nH

Time


V(2) V(3)/1.5

-8V

-6V

-4V

-2V

0V

2V

4V

6V

8V

10V

12V

14V

16V

18V

20V

N-Channel Model

Switching Time Characteristic


Evaluation circuit

Simulation Result

ID= 2.1A, VDD=15V VGS=0/10V

Measurement Simulation Error(%)

ton 8.300 ns 8.3031 ns 0.037

VGS

ID

___ VGS ___ VOUT/1.5


- 27 -

V_VDS

0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V 1.0V

I(Vsense)

0A

0.5A

1.0A

1.5A

2.0A

2.5A

3.0A

3.5A

4.0A

4.5A

5.0A

N-Channel Model

Output Characteristic Circuit Simulation result

Evaluation circuit

VGS= 2.8V

3.0V

3.2 V

3.5V 3.8V 4.0V 10V

8.0V 6.0V

0

U2

TPCP8402

V30Vdc

0

open

R1

100MEGVGS

0Vdc

openopen

open

V1

10Vdc

open


- 28 -

V_V1

0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V

I(R1)

100mA

1.0A

10A

R1

0.01mopen

open

0

open

0

V1

0Vdc

open

open

Ropen

100MEG

U1TPCP8402

N-Channel Model BODY DIODE Forward Current Characteristic


Evaluation Circuit


- 29 -

0.1

1

10

0 0.3 0.6 0.9 1.2 1.5

Drain - Source Voltage VDS (V)

Dra

in r

evers

e C

urr

en

t -

IDR

(A

)

Measurement

Simulation

N-Channel Model

Comparison Graph Circuit Simulation Result

Simulation Result

IDR(A) VSD(V)

%Error Measurement Simulation

0.1 0.7000 0.6998 -0.0286

0.2 0.7200 0.7190 -0.1389

0.5 0.7500 0.7492 -0.1067

1 0.7800 0.7793 -0.0897

2 0.8200 0.8213 0.1585

5 0.9100 0.9089 -0.1209

10 1.02 1.0204 0.0392


- 30 -

Time


I(R1)

-400mA

0A

400mA

R1 50

0

V1

TD = 0

TF = 5.7nsPW = 1usPER = 50us

V1 = -9.6V

TR = 10ns

V2 = 10.8V

N-Channel Model Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trj 8.600 ns 8.651 ns 0.593

trb 10.200 ns 10.200 ns 0.000

trr 18.800 ns 18.851 ns 0.271


- 31 -

N-Channel Model

Reverse Recovery Characteristic Reference

Trj=8.6(ns) Trb=10.2(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example


- 32 -

V_V1

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

I(R1)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

open

0

U1 TPCP8402

Ropen

100MEG

open

open

R1

0.01m

0

openV1

0Vdc

open

open

N-Channel Model ESD PROTECTION DIODE Zener Voltage Characteristic


Evaluation Circuit


- 33 -

N-Channel Model Zener Voltage Characteristic Reference

Technology

SPICE MODEL of TPCP8402 (Professional+BDP Model) in SPICE PARK