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FSI
International, Inc.Vice President of
Marketing
Scott Becker
International Technolo-
gy Roadmap for SemiconductorsITRS
200365nm
high-k
BEOLBack End of
LineCuLow-k
FSI International
ZETAR
ANTARESR CX
MAGELLANR
SymFlowTM
MAGEL-
LANR
130nm
4
65nm3
2
2
HF
SymFlowTM
HF
31
NIKKEI MICRODEVICES65nm100nm65nm
13SymFlowTM
slot 1 slot 25 slot 52 slot 1 slot 25 slot 522 4 6 8
oxide etched
oxide etched
Standard Single-TankDilute HF with in-situ Rinse
FSI MAGELLANR System 65nm BKM ProcessDilute HF with FSI SymFlowTM Technology
FSI MAGELLANR System65nm BKM DIO3 process
Typical 130nm DIO3 process
range
oxide thickness
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
6
5
4
3
2
1
0
2 3
high-k
SiO2
SiO2
SiO2high-k
EOTSiO2
2SiO2
high-k
EOT
65nm
51
Becker
1
FSI International
7SiO2
SiO25
1
SiO2
SiO2
MAGELLANR
1
SiSiO2
65nm
0.4
Becker
SPMAPM
SFA
SPMAPM
dHF
AMPH2O2
SFA0.5
65nm
Becker
ANTARESR CX
ArN2
Culow-k
BEOL
k
Cu
Cu
k2.22.5low-k
k
164-00121-32-2 22TEL.03-5309-8400FAX.03-5309-8401
701-12215311 TEL.086-286-9300 FAX.086-286-9400
oxide etched 4
3210-1-2-3-4
No Damage poly gate
No Damage low-k
No Charging
hydrophilicsurface
hydrophobicsurface
Conventional
Aerosol
ConventionalAerosol
No Watermarks
11 3401
25 25
W a t e r Mark
3
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