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IGBTLow�VCE(sat)�IGBT�in�TRENCHSTOPTM��5�technology
IGW30N65L5650V�IGBT�Low�VCE(sat)�series�fifth�generation
Data�sheet
Industrial�Power�Control
2
IGW30N65L5Low�VCE(sat)�series�fifth�generation
Rev.�2.1,��2014-12-10
Low�VCE(sat)�IGBT�in�TRENCHSTOPTM��5�technology�Features�and�Benefits:
Low�VCE(sat)�L5�technology�offering•�Very�low�collector-emitter�saturation�voltage�VCEsat•�Best-in-Class�tradeoff�between�conduction�and�switching�losses•�650V�breakdown�voltage•�Low�gate�charge�QG•�Maximum�junction�temperature�175°C•�Qualified�according�to�JEDEC�for�target�applications•�Pb-free�lead�plating•�RoHS�compliant•�Complete�product�spectrum�and�PSpice�models:http://www.infineon.com/igbt/
Applications:
•�Uninterruptible�power�supplies•�Solar�photovoltaic�inverters•�Welding�machines
G
C
E
GC
E
Key�Performance�and�Package�ParametersType VCE IC VCEsat,�Tvj=25°C Tvjmax Marking PackageIGW30N65L5 650V 30A 1.05V 175°C G30EL5 PG-TO247-3
3
IGW30N65L5Low�VCE(sat)�series�fifth�generation
Rev.�2.1,��2014-12-10
Table�of�Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
4
IGW30N65L5Low�VCE(sat)�series�fifth�generation
Rev.�2.1,��2014-12-10
Maximum�RatingsFor�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.
Parameter Symbol Value UnitCollector-emitter�voltage,�Tvj�≥�25°C VCE 650 VDC�collector�current,�limited�by�TvjmaxTC�=�25°C�value�limited�by�bondwireTC�=�100°C
IC 85.062.0
A
Pulsed�collector�current,�tp�limited�by�Tvjmax1) ICpuls 120.0 ATurn off safe operating areaVCE�≤�650V,�Tvj�≤�175°C,�tp�=�1µs1) - 120.0 A
Gate-emitter voltageTransient�Gate-emitter�voltage�(tp�≤�10µs,�D�
5
IGW30N65L5Low�VCE(sat)�series�fifth�generation
Rev.�2.1,��2014-12-10
Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
Dynamic�Characteristic
Input capacitance Cies - 4900 -Output capacitance Coes - 42 -Reverse transfer capacitance Cres - 18 -
VCE�=�25V,�VGE�=�0V,�f�=�1MHz pF
Gate charge QG VCC�=�520V,�IC�=�30.0A,VGE�=�15V - 168.0 - nC
Internal emitter inductancemeasured 5mm (0.197 in.) fromcase
LE - 13.0 - nH
Switching�Characteristic,�Inductive�Load
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBT�Characteristic,�at�Tvj�=�25°CTurn-on delay time td(on) - 33 - nsRise time tr - 11 - nsTurn-off delay time td(off) - 308 - nsFall time tf - 51 - nsTurn-on energy Eon - 0.47 - mJTurn-off energy Eoff - 1.35 - mJTotal switching energy Ets - 1.82 - mJ
Tvj�=�25°C,VCC�=�400V,�IC�=�30.0A,VGE�=�0.0/15.0V,RG(on)�=�10.0Ω,�RG(off)�=�10.0Ω,Lσ�=�60nH,�Cσ�=�30pFLσ,�Cσ�from�Fig.�EEnergy losses include “tail” anddiode reverse recovery. Diode: IDW30E65D1.
Switching�Characteristic,�Inductive�Load
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBT�Characteristic,�at�Tvj�=�150°CTurn-on delay time td(on) - 31 - nsRise time tr - 13 - nsTurn-off delay time td(off) - 370 - nsFall time tf - 150 - nsTurn-on energy Eon - 0.68 - mJTurn-off energy Eoff - 2.18 - mJTotal switching energy Ets - 2.86 - mJ
Tvj�=�150°C,VCC�=�400V,�IC�=�30.0A,VGE�=�0.0/15.0V,RG(on)�=�10.0Ω,�RG(off)�=�10.0Ω,Lσ�=�60nH,�Cσ�=�30pFLσ,�Cσ�from�Fig.�EEnergy losses include “tail” anddiode reverse recovery. Diode: IDW30E65D1.
6
IGW30N65L5Low�VCE(sat)�series�fifth�generation
Rev.�2.1,��2014-12-10
Figure 1. Forward�bias�safe�operating�area(D=0,�TC=25°C,�Tvj≤175°C,�VGE=15V,�tp=1µs,ICmax�defined�by�design�-�not�subject�toproduction test)
VCE,�COLLECTOR-EMITTER�VOLTAGE�[V]
IC,�C
OLLECTO
R�CURRENT�[A]
1 10 100 10000.1
1
10
100
not for linear use
Figure 2. Power�dissipation�as�a�function�of�casetemperature(Tvj≤175°C)
TC,�CASE�TEMPERATURE�[°C]
Ptot ,�POWER�DISSIPATION�[W
]
25 50 75 100 125 150 1750
25
50
75
100
125
150
175
200
225
250
Figure 3. Collector�current�as�a�function�of�casetemperature(VGE≥15V,�Tvj≤175°C)
TC,�CASE�TEMPERATURE�[°C]
IC,�C
OLLECTO
R�CURRENT�[A]
25 50 75 100 125 150 1750
10
20
30
40
50
60
70
80
90
Figure 4. Typical�output�characteristic(Tvj=25°C)
VCE,�COLLECTOR-EMITTER�VOLTAGE�[V]
IC,�C
OLLECTO
R�CURRENT�[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.00
10
20
30
40
50
60
70
80
90VGE = 20V
18V
15V
12V
10V
8V
7V
6V
7
IGW30N65L5Low�VCE(sat)�series�fifth�generation
Rev.�2.1,��2014-12-10
Figure 5. Typical�output�characteristic(Tvj=175°C)
VCE,�COLLECTOR-EMITTER�VOLTAGE�[V]
IC,�C
OLLECTO
R�CURRENT�[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.00
10
20
30
40
50
60
70
80
90VGE = 20V
18V
15V
12V
10V
8V
7V
6V
5V
Figure 6. Typical�transfer�characteristic(VCE=20V)
VGE,�GATE-EMITTER�VOLTAGE�[V]
IC,�C
OLLECTO
R�CURRENT�[A]
2 3 4 5 6 7 8 90
10
20
30
40
50
60
70
80
90Tvj�=�25°CTvj�=�150°C
Figure 7. Typical�collector-emitter�saturation�voltage�asa�function�of�junction�temperature(VGE=15V)
Tvj,�JUNCTION�TEMPERATURE�[°C]
VCEsat ,�COLLECTO
R-EMITTE
R�SATU
RATION�[V
]
25 50 75 100 125 150 1750.500
0.625
0.750
0.875
1.000
1.125
1.250IC�=�7.5AIC�=�15AIC�=�30A
Figure 8. Typical�switching�times�as�a�function�ofcollector�current(inductive�load,�Tvj=150°C,�VCE=400V,VGE=0/15V,�RG(on)=10Ω,�RG(off)=10Ω,�dynamictest circuit in Figure E)
IC,�COLLECTOR�CURRENT�[A]
t,�SWITCHING�TIMES�[ns]
0 10 20 30 40 50 60 70 80 901
10
100
1000
td(off)tftd(on)tr
8
IGW30N65L5Low�VCE(sat)�series�fifth�generation
Rev.�2.1,��2014-12-10
Figure 9. Typical�switching�times�as�a�function�of�gateresistance(inductive�load,�Tvj=150°C,�VCE=400V,VGE=0/15V,�IC=30A,�dynamic�test�circuit�inFigure E)
RG,�GATE�RESISTANCE�[Ω]
t,�SWITCHING�TIMES�[ns]
0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.01
10
100
1000
td(off)tftd(on)tr
Figure 10. Typical�switching�times�as�a�function�ofjunction�temperature(inductive�load,�VCE=400V,�VGE=0/15V,IC=30A,�RG(on)=10Ω,�RG(off)=10Ω,�dynamictest circuit in Figure E)
Tvj,�JUNCTION�TEMPERATURE�[°C]
t,�SWITCHING�TIMES�[ns]
25 50 75 100 125 150 1751
10
100
1000td(off)tftd(on)tr
Figure 11. Gate-emitter�threshold�voltage�as�a�functionof�junction�temperature(IC=0.4mA)
Tvj,�JUNCTION�TEMPERATURE�[°C]
VGE(th
) ,�GATE
-EMITTE
R�THRESHOLD
�VOLT
AGE�[V
]
25 50 75 100 125 150 1751
2
3
4
5
6
7typ.min.max.
Figure 12. Typical�switching�energy�losses�as�afunction�of�collector�current(inductive�load,�Tvj=150°C,�VCE=400V,VGE=0/15V,�RG(on)=10Ω,�RG(off)=10Ω,dynamic test circuit in Figure E)
IC,�COLLECTOR�CURRENT�[A]
E,�S
WITCHING�ENERGY�LOSSES�[m
J]
0 10 20 30 40 50 60 70 80 900
1
2
3
4
5
6
7EoffEonEts
9
IGW30N65L5Low�VCE(sat)�series�fifth�generation
Rev.�2.1,��2014-12-10
Figure 13. Typical�switching�energy�losses�as�afunction�of�gate�resistance(inductive�load,�Tvj=150°C,�VCE=400V,VGE=0/15V,�IC=30A,�dynamic�test�circuit�inFigure E)
RG,�GATE�RESISTANCE�[Ω]
E,�S
WITCHING�ENERGY�LOSSES�[m
J]
0 10 20 30 40 50 60 700.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5EoffEonEts
Figure 14. Typical�switching�energy�losses�as�afunction�of�junction�temperature(inductive�load,�VCE=400V,�VGE=0/15V,IC=30A,�RG(on)=10Ω,�RG(off)=10Ω,�dynamictest circuit in Figure E)
Tvj,�JUNCTION�TEMPERATURE�[°C]
E,�S
WITCHING�ENERGY�LOSSES�[m
J]
25 50 75 100 125 150 1750.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5EoffEonEts
Figure 15. Typical�switching�energy�losses�as�afunction�of�collector�emitter�voltage(inductive�load,�Tvj=150°C,�VGE=0/15V,IC=30A,�RG(on)=10Ω,�RG(off)=10Ω,�dynamictest circuit in Figure E)
VCE,�COLLECTOR-EMITTER�VOLTAGE�[V]
E,�S
WITCHING�ENERGY�LOSSES�[m
J]
200 250 300 350 400 450 5000.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6EoffEonEts
Figure 16. Typical�gate�charge(IC=30A)
QG,�GATE�CHARGE�[nC]
VGE,�G
ATE
-EMITTE
R�VOLT
AGE�[V
]
0 20 40 60 80 100 120 140 160 1800
2
4
6
8
10
12
14
16VCC�=�130VVCC�=�520V
10
IGW30N65L5Low�VCE(sat)�series�fifth�generation
Rev.�2.1,��2014-12-10
Figure 17. Typical�capacitance�as�a�function�ofcollector-emitter�voltage(VGE=0V,�f=1MHz)
VCE,�COLLECTOR-EMITTER�VOLTAGE�[V]
C,�C
APACITANCE�[pF]
0 5 10 15 20 25 3010
100
1000
1E+4CiesCoesCres
Figure 18. IGBT�transient�thermal�impedance(D=tp/T)
tp,�PULSE�WIDTH�[s]
Zth(j -c
) ,�TR
ANSIENT�TH
ERMAL�IMPEDANCE�[K
/W]
1E-6 1E-5 1E-4 0.001 0.01 0.10.01
0.1
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
10.0107022.0E-5
20.1550562.2E-4
30.1729372.0E-3
40.2901730.011473
50.0271360.092564
62.2E-31.827121
11
IGW30N65L5Low�VCE(sat)�series�fifth�generation
Rev.�2.1,��2014-12-10
PG-TO247-3
12
IGW30N65L5Low�VCE(sat)�series�fifth�generation
Rev.�2.1,��2014-12-10
t
a b
td(off)
tf trtd(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE
(t)
t
t
tt1 t4
2% IC
10% VGE
2% VCE
t2 t3
E
t
t
V I toff
= x x d
1
2
CE C E
t
t
V I ton
= x x d
3
4
CE C
CC
dI /dtF
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switchingcharacteristics
Figure E. Dynamic test circuit
Figure D.
I (t)C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Qrr a b
rr a b
= +
= +
Qa Qb
V (t)CE
VGE
(t)
I (t)C
V (t)CE
13
IGW30N65L5
Low VCE(sat) series fifth generation
Rev. 2.1, 2014-12-10
Revision History
IGW30N65L5
Revision: 2014-12-10, Rev. 2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2014-12-10 Final data sheet
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Published byInfineon Technologies AG81726 Munich, Germany81726 München, Germany© 2014 Infineon Technologies AGAll Rights Reserved.
Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding theapplication of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,including without limitation, warranties of non-infringement of intellectual property rights of any third party.
InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest InfineonTechnologies Office (www.infineon.com).
WarningsDue to technical requirements, components may contain dangerous substances. For information on the types inquestion, please contact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systemsand/or automotive, aviation and aerospace applications or systems only with the express written approval of InfineonTechnologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Lifesupport devices or systems are intended to be implanted in the human body or to support and/or maintain and sustainand/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may beendangered.
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Table of ContentsMaximum RatingsThermal ResistanceElectrical Characteristics (Static)Electrical Characteristics (Dynamic)Switching Characteristic, Inductive Load, at Tj lowDiode Characteristic, at Tj lowSwitching Characteristic, Inductive Load, at Tj highDiode Characteristic, at Tj highChartsChartsChartsChartsChartsPackage DrawingTesting ConditionsRevision HistoryDisclaimer
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