Film Deposition Part II: Si Oxidation...Xing Sheng, EE@Tsinghua 1 Xing Sheng盛兴 Department of...

Xing Sheng, EE@Tsinghua

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Xing Sheng盛兴

Department of Electronic EngineeringTsinghua University

xingsheng@tsinghua.edu.cn

Film DepositionPart II: Si Oxidation

Principles of Micro- and Nanofabrication for Electronic and Photonic Devices

Xing Sheng, EE@Tsinghua

CMOS Transistors

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Xing Sheng, EE@Tsinghua

Very stable for Ge, GeO2 is soluble in water, and decompose at 450 oC

for GaAs, GaOx and AsOx have many defects

Easily etched wet etch (HF solution) or dry etch (F based plasma)

Good diffusion barrier (low dopant diffusivity Dox << DSi )

High quality insulator band gap ~ 8 eV, resistivity > 1016 *cm

High dielectric strength (> 500 V/m)

Low interface state / defect density (< 1010 cm-2)

Properties of SiO2

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Xing Sheng, EE@Tsinghua

Properties of SiO2

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Xing Sheng, EE@Tsinghua

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Native Oxide

Si forms native oxide in the air (1~2 nm, a few hours)Q: amorphous or crystalline SiO2 ?

SiO2

Si

clean Si (oxide removed by HF)hydrophobic

Si with native oxidehydrophilic

Xing Sheng, EE@Tsinghua

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Thermal Oxide Growth

dry oxidation Si (s) + O2 (g) = SiO2 (s)wet oxidation Si (s) + H2O (g) = SiO2 (s) + H2 (g)

Video

Xing Sheng, EE@Tsinghua

The Deal-Grove (D-G) Model

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Xing Sheng, EE@Tsinghua

The Deal-Grove (D-G) Model

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(reaction limited)

A related to reactionB related to diffusion initial native oxide

Xing Sheng, EE@Tsinghua

Thermal Oxidation

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Process Parameters Time

Temperature

Gas type (O2, H2O, ...)

Gas pressure

Crystal orientation

Dopant (B, P, As, ...)

Control Parameters Oxide thickness

Film quality (defects, dielectric strength, ...)

Xing Sheng, EE@Tsinghua

Dry vs. Wet Oxidation

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wet oxidation is 10~100 times faster than dry oxidationbecause H2O has higher solubility/diffusivity in SiO2

Video

Xing Sheng, EE@Tsinghua

Crystal Orientation

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Si (111) has smaller A, but same B with Si (100)

higher growth rate at initial stage

why ??

Xing Sheng, EE@Tsinghua

Crystal Orientation

12similar rates at long time oxidation (diffusion limited)

Si (100) Si (111)

Xing Sheng, EE@Tsinghua

Thermal Oxidation - Simulation

13https://cleanroom.byu.edu/processes#Microfab_OxideGrowth

Xing Sheng, EE@Tsinghua

SiO2 Film Thickness Measurement

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color difference

Xing Sheng, EE@Tsinghua

SiO2 Film Thickness Measurement

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Spectroscopic Ellipsometer

Xing Sheng, EE@Tsinghua

SiO2 in CMOS

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gate oxide for transistors

2

)( 2

,thG

SatD

VVC

L

WI

Xing Sheng, EE@Tsinghua

SiO2 in CMOS

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Local Oxidation of Si (LOCOS)

For isolation

transistor region

Xing Sheng, EE@Tsinghua

SiO2 in CMOS

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temperature

other methods to deposit SiO2

Q: why?

Xing Sheng, EE@Tsinghua

SiO2 in CMOS

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high dielectric for gate oxide

2

)( 2

,thG

SatD

VVC

L

WI

t

AC 0

low dielectric for insulating

reduce RC delay

Xing Sheng, EE@Tsinghua

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thickness t is already ~ nmhigh -> large C -> large ID

t

AC

VVC

L

WI thG

SatD

0

2

,2

)(

Oxide for High Dielectric

Xing Sheng, EE@Tsinghua

Porous SiO2 for Low Dielectric

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SiO2

= 3.9air

= 1.0

Xing Sheng, EE@Tsinghua

SiO2 in Biointegrated Devices

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Thermal oxide is an ideal moisture barrier

H. Fang, et al., Proc. Natl. Acad. Sci. 113, 11682 (2016)

At room temperature, it will take > 100 years to dissolve 1 m thermal SiO2 in water

useful for implantable devices