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MAPS for Particles PhysicsChristine Hu-Guo (IPHC)
PHA
SE1
– ST
AR
IPH
C
IPHC christine.hu@ires.in2p3.fr 2October 2010 USTC
Trends for Pixel Sensor Development
CCD (Charge Coupled Device)
Hybrid Pixel Detector
Future subatomic physics experiments need detectors beyond the state of the art
MAPS provide an attractive trade-off between granularity, material budget, readout speed, radiation tolerance and power dissipation
Power consumptionLimited for all experiments
3DIT High resistivity EPI
2D & 3D MAPS
MAPS Developm
ent Trend
3T pixel Analogue RO MAPS
Digital RO MAPS
IPHC christine.hu@ires.in2p3.fr 3October 2010 USTC
Development of MAPS for Charged Particle Tracking
In 1999, the IPHC CMOS sensor group proposed the first CMOS pixel sensor (MAPS) for future vertex detectors (ILC)
Numerous other applications of MAPS have emerged since then ~10-15 HEP groups in the USA & Europe are presently active in MAPS R&D
Original aspect: integrated sensitive volume (EPI layer) and front-end readout electronics on the same substrate
Charge created in EPI, excess carriers propagate thermally, collected by NWELL/PEPI , with help of reflection on boundaries with P-well and substrate (high doping)
Q = 80 e-h / µm signal < 1000 e- Compact, flexible EPI layer ~10–15 µm thick
thinning to ~30–40 µm permitted Standard fabrication technology
Cheap, fast turn-around Room temperature operation
Attractive balance between granularity, material budget, radiation tolerance, read out speed and power dissipation
BUT Very thin sensitive volume impact on signal magnitude (mV!) Sensitive volume almost un-depleted impact on radiation tolerance & speed Commercial fabrication (parameters) impact on sensing performances & radiation tolerance NWELL used for charge collection restricted use of PMOS transistors
IPHC-DUT christine.hu@ires.in2p3.fr 714-18/01/2008
iPHC
Metal layers
Polysilicon
P-Well N-Well P-Well
N+ N+ P+ N+
Dielectric for insulation and passivation
Charged particles
100% efficiency.
Radiation
--
--
--
- ++
+++
++
- +- +- +
P-substrate (~100s m thick)
P-epitaxial layer(up to to 20 m thick)
Potential barriers
epi
sub
N
Nln
q
kTV
R.T.
IPHC christine.hu@ires.in2p3.fr 4October 2010 USTC
Achieved Performances with Analogue Readout MAPS provide excellent tracking performances
Detection efficiency ~100% ENC ~10-15 e- S/N > 20-30 (MPV) at room temperature
Single point resolution ~ µm, a function of pixel pitch ~ 1 µm (10 µm pitch), ~ 3 µm (40 µm pitch)
MAPS: Final chips: MIMOTEL (2006): ~66 mm², 65k pixels, 30 µm pitch
EUDET Beam Telescope (BT) demonstrator MIMOSA18 (2006): ~37 mm², 262k pixels, 10 µm pitch
High resolution EUDET BT demonstrator MIMOSTAR (2006): ~2 cm², 204k pixels, 30 µm pitch
Test sensor for STAR Vx detector upgrade LUSIPHER (2007): ~40 mm², 320k pixels, 10 µm pitch
Electron-Bombarded CMOS for photon and radiation imaging detectors
MIMOSTARChip dimension: ~2 cm²
MIMOTEL
M18
LUSIPHER
IPHC christine.hu@ires.in2p3.fr 5October 2010 USTC
Radiation tolerance (preliminary)
Ionising radiation tolerance: O(1 M Rad) (MIMOSA15, test cond. 5 GeV e-, T = -20°C, tint~180 µs)
tint << 1 ms, crucial at room temperature
Non ionising radiation tolerance: depends on pixel pitch: 20 µm pitch: 2x1012 neq /cm2 , (Mimosa15, tested on DESY e- beams, T = - 20°C, tint ~700 μs)
5.8·1012neq/cm² values derived with standard and with soft cuts
10 µm pitch: 1013 neq /cm2 , (MIMOSA18, tested at CERN-SPS , T = - 20°C, t int ~ 3 ms)
parasitic 1–2 kGy gas N ↑
Further studies needed : Tolerance vs diode size, Readout speed, Digital output, ... , Annealing ??
Integ. Dose Noise S/N (MPV) Detection Efficiency
0 9.0 ± 1.1 27.8 ± 0.5 100 %
1 Mrad 10.7 ± 0.9 19.5 ± 0.2 99.96 % ± 0.04 %
Fluence (1012neq/cm²)
0 0.47 2.1 5.8 (5/2) 5.8 (4/2)
S/N (MPV) 27.8 ± 0.5 21.8 ± 0.5 14.7 ± 0.3 8.7 ± 2. 7.5 ± 2.
Det. Efficiency (%) 100. 99.9 ± 0.1 99.3 ± 0.2 77. ± 2. 84. ± 2.
Fluence (1012neq/cm²)
0 6 10
Q cluster (e-) 1026 680 560
S/N (MPV) 28.5 ± 0.2 20.4 ± 0.2 14.7 ± 0.2
Det. Efficiency (%) 99.93 ± 0.03 99.85 ± 0.05 99.5 ± 0.1
IPHC christine.hu@ires.in2p3.fr 6October 2010 USTC
System integration
Industrial thinning (via STAR collaboration at LBNL) ~50 µm, expected to ~30-40 µm
Ex. MIMOSA18 (5.5×5.5 mm² thinned to 50 μm)
Development of ladder equipped with MIMOSA chips (coll. with LBNL) STAR ladder (~< 0.3 % X0 ) ILC (<0.2 % X0 )
Edgeless dicing / stitching alleviate material budget of flex cableIRFU - IPHC christine.hu@ires.in2p3.fr 718-21/05/2009 FEE09
0.282Total
0.11CF / RVC carrier
0.0143Adhesive
0.090Cable assembly
0.0143Adhesive
0.0534MIMOSA detector
% radiation length
PIXEL Ladder
40 LVDS Sensor output pairs clock, control, JTAG, power,ground.
10 MAPS Detectors
low mass / stiffnesscables
to motherboard
LVDS drivers
Now 0.37 % Xo
IPHC christine.hu@ires.in2p3.fr 7October 2010 USTC
Analogue Readout Sensors Digital Readout Sensors
Analogue readout sensors : excellent performance
BUT: moderate readout speed for larger sensors with smaller pitch!
For many applications: high granularity and fast readout required simultaneously
Integrating signal processing: ADC, Data sparsification, …
Digital Readout Sensors
R&D on high readout speed, low noise, low power dissipation, highly
integrated signal processing architecture with radiation tolerance
IPHC christine.hu@ires.in2p3.fr 8October 2010 USTC
Development of CMOS Pixel Sensors for Charged Particle Tracking
Design according to 3 issues: Increasing S/N at pixel-level A to D Conversion at column-level Zero suppression at chip edge level
Power v.s. speed: Power Readout in a rolling shutter mode
Speed 1 row pixels are read out //
MIMOSA26 is a reticule size MAPS with binary output, 10 k images / s
Pixel array: 1152 x 576, 18.4 µm pitch Hit density: ~ 106 particles/cm²/s Architecture:
Pixel (Amp+CDS) array organised in // columns r.o.in the rolling shutter mode
1152 ADC, a 1-bit ADC (discriminator) / column Integrated zero suppression logic Remote and programmable 21.5 mm
13.7
mm
MIMOSA26Active area: ~10.6 x 21.2 mm2
Pixel Array
Rolling shutter mode
ADC
Zero suppression
IPHC christine.hu@ires.in2p3.fr 9October 2010 USTC
MIMOSA26: 1st MAPS with Integrated Ø
Pixel array: 576 x 1152, pitch: 18.4 µm Active area: ~10.6 x 21.2 mm2
In each pixel: Amplification CDS (Correlated Double Sampling)
1152 column-level discriminators offset compensated high
gain preamplifier followedby latch
Zero suppression logic
Memory management Memory IP blocks
Readout controller JTAG controller
Current Ref. Bias DACs
Row sequencer Width: ~350 µm
I/O PadsPower supply PadsCircuit control PadsLVDS Tx & Rx
CMOS 0.35 µm OPTO technology, Chip size : 13.7 x 21.5 mm2
Testability: several test points implemented all along readout path
Pixels out (analogue) Discriminators Zero suppression Signal transmission
Reference Voltages Buffering for 1152 discriminators
PLL, 8b/10b optional
Integration time: ~ 100 µs R.O. speed: 10 k frames/s Hit density: ~ 106
particles/cm²/s
IPHC christine.hu@ires.in2p3.fr 10October 2010 USTC
Radiation Tolerance Improvement
Non ionising radiation toleranceHigh resistivity sensitive volume faster charge collection
Exploration of a VDSM technology with depleted (partially ~30 µm) substrate: Project "LePix" driven by CERN for SLHC trackers (attractive for CBM, ILC and CLIC Vx Det.)
Exploration of a technology with high resistivity thin epitaxial layer XFAB 0.6 µm techno: ~15 µm EPI ( ~ O(103).cm), Vdd = 5 V (MIMOSA25)
Benefit from the need of industry for improvement of the photo-sensing elements embedded into CMOS chip
For comparison: standard CMOS technology, low resistivity P-epi
high resistivity P-epi: size of depletion zone size is comparable to the P-epi thickness!
TCAD Simulation15 µm high resistivity (1000 Ω . cm) EPI compared to 15 µm standard EPI (10 Ω . cm)
IPHC christine.hu@ires.in2p3.fr 11October 2010 USTC
Landau MP (in electrons) versus cluster sizeLandau MP (in electrons) versus cluster size0 neq/cm²
0.3 x 1013 neq/cm²
1.3 x 1013 neq/cm²
3 x 1013 neq/cm²
MIMOSA25 in a high resistivity epitaxial layer
20 μm pitch, + 20°C, self-bias diode @ 4.5 V, 160 μs read-out time Fluence ~ (0.3 / 1.3 / 3·)1013 neq/cm2 Tolerance improved by > 2 order of mag. Need to confirm det (uniformity !) with beam tests
16x9
6
Pit
ch 2
0µm
MIMOSA25
To compare: «standard» non-depleted EPI substrate: MIMOSA15 Pitch=20µm, before and after 5.8x1012 neq/cm2
saturation -> >90 % of charge is collected is 3 pixels -> very low charge spread for depleted substrate
EPI: (1000 Ω . Cm)
IPHC christine.hu@ires.in2p3.fr 12October 2010 USTC
MIMOSA26 Test Results
Laboratory tests: ENC ~ 11-13 e-
Signal to noise ratio for the seed pixel before irradiation and after exposure to a fluence of 6 x 1012 neq / cm²
0.64 mV0.31 mV
~ 76 %~ 57 %~ 22 %20 µm
~ 91 %~ 78 %~ 31 %15 µm
~ 95 %~ 85 %~ 36 %10 µm
~ 71 %~ 54 %~21%
3x32x2seedEPI thickness
3x32x2Seed
CCE (55Fe source)
High resistivity (~400 .cm)Standard (~10 .cm) 14 µmEPI layer
(a)
EPI thick
10.7
After 6x1012 neq/cm²Before irradiation
--------
28
22
After 6x1012 neq/cm²Before irradiation
~ 3620 µm
~ 4115 µm
~ 3510 µm~ 20
(230 e-/11.6 e-)
S/N at seed pixel
(106Ru source)
High resistivity (~400 .cm)Standard (~10 .cm) 14 µmEPI layer
(b)
IPHC christine.hu@ires.in2p3.fr 13October 2010 USTC
High-Resistivity CMOS Pixel Sensors Preliminary conclusions:
Detection efficiency ~100% (SNR ~40) for very low fake rate: Plateau until fake rate of few 10-6
Single point resolution <~4 µm Detection efficiency ~100% after exposure to fluence of 1x1013 neq/cm²
Excellent detection performances with high-resistivity epitaxial layer despite moderate resistivity (400 Ω.cm) and poor depletion voltage (<1V)
Tolerance to >~ O(1014) neq/cm² seems within reach (study under way)
MIMOSA26: design base line for STAR Vx upgrade, CBM MVD. Its performances are close to the ILD vertex detector specifications
IPHC christine.hu@ires.in2p3.fr 14October 2010 USTC
Summary of MIMOSA26 Main Characteristics
More than 80 sensors tested Yield ~90%
(75% fully functional sensors thinned to 120 µm + 15% (showing one bad row or column)
Thinning yield to 50 µm ~90%
Readout time tr.o.~100 µs (10 4 frames/s) suited to > 10 6 particules/cm²/s
Detection efficiency ~100% (S/N ~ 40) for very low fake rate Plateau until fake rate of few 10-6
Single point resolution <~ 4 µm
Detection efficiency still ~100% after exposure to: Fluence of 1x1013 neq / cm²
Tolerance to >~O(1014) neq /cm² seems within reach (study under way)
TID: ~ several 10² KRad at room temperature
Expected to reach ~O(1) MRad tolerance at negative temperature
IPHC christine.hu@ires.in2p3.fr 15October 2010 USTC
STAR Heavy Flavor Tracker (HFT) Upgrade
Physics Goals: Identification of mid rapidity Charm and Beauty mesons and
baryons through direct reconstruction and measurement of the displaced vertex with excellent pointing resolution
TPC – Time Projection Chamber (main detector in STAR)
HFT – Heavy Flavor Tracker
SSD – Silicon Strip Detector
IST – Inner Silicon Tracker
PXL – Pixel Detector (PIXEL)
Goal: Increasing pointing resolution from the outside in
TPC SSD IST PXL~1 mm ~300 µm ~250 µm
vertex<30 µm
co
urt
esy
of
M.
Sze
lezn
iak
/ V
ert
ex-
20
10
IPHC christine.hu@ires.in2p3.fr 16October 2010 USTC
STAR PIXEL Detector
~20 cm
Cantilevere
d support
One of two half c
ylinders
RO buffers
/ driv
ers
Total: 40 laddersLadder = 10 MAPS sensors (~2x2 cm² each)
Detector e
xtractio
n at one end of t
he cone
Sensors Requirements Multiple scattering minimisation:
Sensors thinned to 50 um, mounted on a flex kapton/aluminum cable
X/X0 = 0.37% per layer
Sufficient resolution to resolve the secondary decay vertices from the primary vertex
< 10 um
Luminosity = 8 x 1027 / cm² / s at RHIC_II ~200-300 (600) hits / sensor (~4 cm2) in the
integration time window Shot integration time ~< 200 µs
Low mass in the sensitive area of the detector airflow based system cooling
Work at ambient (~ 35 °C ) temperature Power consumption ~ 100 mW / cm²
Sensors positioned close (2.5 - 8 cm radii) to the interaction region
~ 150 kRad / year few 1012 Neq / cm² / year
2.5 cm Inner layer
8 cm radius Outer layer
End view
Centre of the
beam pipe
courtesy of M. Szelezniak / Vertex-2010
IPHC christine.hu@ires.in2p3.fr 17October 2010 USTC
STAR PIXEL Detector
3 steps evolution: 2007: A MimoSTAR-2 sensors based
telescope has been constructed and performed measurements of the detector environment at STARMimoSTAR-2: sensor with analogue output
2012: The engineering prototype detector with limited coverage (1/3 of the complete detector surface), equipped with PHASE-1 sensors will be installedPHASE-1: sensor with binary output without zero suppression
2013: The pixel detector composed with 2 layers of ULTIMATE sensors will be installedULTIMATE: sensor with binary output and with zero suppression logic
PIXEL detector composed of 2 MAPS layers
Prototype detector composed of 3 sectors with PHASE-1 sensors
3 plans telescope with MImoSATR-2 sensors
IPHC christine.hu@ires.in2p3.fr 18October 2010 USTC
ULTIMATE: Extension of MIMOSA26
Optimisation
20240 µm
2271
0 µ
m
3280
µm
21560 µm
1378
0 µ
m MIMOSA26 ULTIMATE
Reduction of power dissipation
Pixel adjustment & optimisation for a 20.7 µm pixel pitch
Discriminator timing diagram optimisation
Integration of on-chip voltage regulators
Zero Suppression circuit (SuZe) adapted to STAR condition
Minimisation of digital to analogue coupling
Enhance testability
In future chip :Latch up free memory may be integrated
ULTIMATE sensors are planned to be delivered to LBL in Q1 2011
IPHC christine.hu@ires.in2p3.fr 19October 2010 USTC
Direct Applications of MIMOSA26
(DUT)
Pixel Sensor
FP6 project EUDET: Provide to the scientific community an infrastructure aiming to support the detector R&D for the ILC
JRA1: High resolution pixel beam telescope Two arms each equipped with 3 MIMOSA26 (50 µm) DUT between these arms and moveable via X-Y table
Telescope features: High extrapolated resolution < 2 µm Large sensor area ~ 2 cm2
High read-out speed ~ 10 k frame/s
EUDET telescope is available to use it for tests at test beams, mainly at DESY or CERN
Spin-offs Several BT copies: foreseen for detector R&D BT for channelling studies, mass spectroscopy, etc CBM (FAIR): demonstrator for CBM-MVD
CBM (Compressed Baryonic Matter)
FIRST (GSI): VD for hadrontherapy measurements FIRST (Fragmentation of Ions Relevant for Space and
Therapy)
IPHC christine.hu@ires.in2p3.fr 20October 2010 USTC
Extension of MIMOSA26 to Other Projects
STAR HFT (Heavy Flavour Tracker) - PIXEL sensor : (see following slides)
Micro Vertex Detector (MVD) of the CBM : 2 double-sided stations equipped with MIMOSA sensors 0.3-0.5% Xo per station ~< 5 µm single point resolution Several MRad & > 1013neq /cm²/s
Sensor with double-sided read-out r.o. speed ! Start of physics >~ 2016
Vertex detector of the ILC: Geometry: 3 double-sided or 5 single sided layers ~0.2% Xo total material budget per layer 2 μm (4-bit ADC ) < sp < 3 μm (discri.) (~16 µm pitch)
tint. ~ 25 μs (innermost layer) double-sided readout
tint. ~ 100 μs (outer layer) Single-sided readout
Pdiss < (0.1–1 W/cm²)× 1/50 duty cycle
Candidate for other experiments: (VD) EIC, (ITS upgrade, FOCAL) ALICE, (SVT) SuperB, (VD) CLIC …
IPHC christine.hu@ires.in2p3.fr 21October 2010 USTC
R&D Directions: Sensor Integration in Ultra Light Devices
PLUME (Pixelated Ladder with Ultra-low Material Embedding) Project Study a double-sided detector ladder
motivated by the R&D for ILD VD Targeted material budget: <~0.3%XO
Correlated hits reconstruct minivector Better resolution / easier alignment
Sensors with different functionalities on each side Square pixels for single point resolution Elongated pixels for time resolution
SERWIETE (SEnsor Raw Wrapped In an Extra Thin Envelope) Project Motivated by HadronPhysics2, FP7 30 µm thin sensors mounted on a thin flex cable and
wrapped in polymerised film Expected material budget <~ 0.15 % Xo Unsupported & flexible detector layer ?
to evaluate the possibility of mounting a supportless ladder on a cylindrical surface like a beam pipe (used as mechanical support). Proof of principle expected in 2012
Collaboration with IMEC Fully functional microprocessor chip in flexible
plastic envelope. Courtesy of Piet De Moor,
IMEC company, Belgium
IPHC christine.hu@ires.in2p3.fr 2218-20/10/2010 ATHIC 2010
Time resolution
Spatial resolution
IPHC christine.hu@ires.in2p3.fr 22October 2010 USTC
R&D Directions: Large Area Sensors (LAS)
768x768Pitch ~16 µm
768x768Pitch ~16 µm
768x768Pitch ~16 µm
768x768Pitch ~16 µm
768x768Pitch ~16 µm
768x768Pitch ~16 µm
768x768Pitch ~16 µm
768x768Pitch ~16 µm
768x768Pitch ~16 µm
768x768Pitch ~16 µm
768x768Pitch ~16 µm
768x768Pitch ~16 µm
768x768Pitch ~16 µm
768x768Pitch ~16 µm
768x768Pitch ~16 µm
768x768Pitch ~16 µm
768x768Pitch ~16 µm
BOTTOM
TOP
1 2 3 41 2 3 4
4
3
2
1
TOP
BOTTOM BOTTOM BOTTOM BOTTOM
TOP TOP TOP
4
3
2
1
1 4
2 3
Reticule 2 x 2 cm²
~ 5 cm
~ 5
cm
Large surface detector minimize dead zone AIDA, CBM, EIC, biomedical imaging: sensor well beyond the reticle size
Maximum size of a CMOS chip in modern deep submicron technology is limited by its reticle size (2x2 cm²)
Reticle size is a maximum size that can be realised in a single lithography step
Fabrication using stitching technique
Stitching technique: Large CMOS sensor is divided into smaller
sub-blocks These blocks have to be small enough that
they all fit into the limited reticle space The complete sensor chips
are being stitched together from the building blocks in the reticle.
IPHC christine.hu@ires.in2p3.fr 23October 2010 USTC
R&D Directions: Using 3DIT to Achieve Ultimate MAPS Performances
3DIT: stack thin (~10 µm) IC chips (wafers), inter-connections between chips by TSV
3DIT are expected to be particularly beneficial for MAPS Combine different fabrication processes Resorb most limitations specific to 2D MAPS
Split signal collection and processing functionalities, use best suited technology for each Tier :
Tier-1: charge collection system Epitaxy (depleted or not), deep N-well ? ultra thin layer X0 Tier-2: analogue signal processing analogue, low Ileak, process (number of metal layers)
Tier-3: mixed and digital signal processing Tier-4: data formatting (electro-optical conversion ?)
digital process (number of metal layers)feature size fast laser driver, etc.
Analog Readout Circuit
Diode
Pixel Controller,
A/D conversion
Pix
el C
on
tro
ller
, C
DS
Digital
Analog
Sensor
~ 50 µm
Analog Readout Circuit
Diode
~ 20 µm
Analog Readout Circuit
Diode
Analog Readout Circuit
Diode
TSV
Through Silicon Vias
2D - MAPS 3D - MAPS
RTI internationalInfrared Imager
The First 3D Multiproject Run for HEP
International Collaboration
USA, France, Italy, Germany, …
IPHC christine.hu@ires.in2p3.fr 24October 2010 USTC
IPHC 3D MAPS: Self Triggering Pixel Strip-like Tracker (STriPSeT)
Combination of 2 processes: Tezzaron/Chartered 2-tiers with a high resistivity EPI tier
Tier-1: Thin, depleted (high resistivity EPI) detection tier ultra thin sensor!!! Fully depleted Fast charge collection (~5ns) should be radiation tolerant For small pitch, charge contained in less than two pixels Sufficient (rather good) S/N ratio defined by the first stage “charge amplification” ( >x10) by capacitive coupling to the second stage
Tier-2: Shaperless front-end: Single stage, high gain, folded cascode based charge amplifier, with a current source in the feedback loop
Shaping time of ~200 ns very convenient: good time resolution Low offset, continuous discriminator
Tier-3: Digital: Data driven (self-triggering), sparsified binary readout, X and Y projection of hit pixels pattern
Matrix 256x256 2 µs readout time
Tier-1 Tier-2 Tier-3
Cd~10fF
G~1
Cc=100fF
Cf~10fF off <10 mV
Digital RD
Vth
Ziptronix (Direct Bond Interconnect, DBI®*)
Tezzaron (metal-metal (Cu)
thermocompression) DBI® – Direct Bond Interconnect, low temperature CMOS compatible direct oxide bonding with scalable interconnect for highest density 3D interconnections (< 1 µm Pitch, > 108/cm /cm² Possible)
IPHC christine.hu@ires.in2p3.fr 25October 2010 USTC
IPHC 3D MAPS: Fast 3D Sensor with Power Reduction
MAPS with fast pipeline digital readout aiming to minimise power consumption (R&D in progress)
Subdivide sensitive area in ”small” matrices running individually in rolling shutter mode
Adapt the number of raws to required frame readout time
few µs r.o. time may be reached
Design in 20 µm²: Tier 1: Sensor & preamplifier (G ~ 500 µV/e-) Tier 2: 4-bit pixel-level ADC with offset cancellation circuitry (LSB ~ N) Tier 3: Fast pipeline readout with data sparsification
sp ~ 2 μmTint. < 10 µs
~18-20 µm
Detection diode& Amplifier
4-bit ADC
RO
Sparsification
IPHC christine.hu@ires.in2p3.fr 26October 2010 USTC
Conclusion After 10 year, 2D-MAPS R&D reaches its maturity for real scale applications
EUDET, STAR (PIXEL), FIRST (VD), …
R&D continues: new performance scale accessible with emergent CMOS fabrication technology allowing to fully exploit the potential of MAPS approach
CBM, ALICE/LHC, EIC, CLIC, SuperB, …
System integration (PLUME , SERWIETE) + Intelligent data processing + data transmission
Mediate & long term objective: 3D sensors mainly motivated by RO < few µs Ultimately: expect to become the best performing pixel technology ever …?
IPHC christine.hu@ires.in2p3.fr 27October 2010 USTC
Back up
IPHC christine.hu@ires.in2p3.fr 28October 2010 USTC
Application of CMOS Sensors to CBM Experiment
IPHC christine.hu@ires.in2p3.fr 29October 2010 USTC
Direct Applications of EUDET Sensor
IPHC christine.hu@ires.in2p3.fr 30October 2010 USTC
MIMOSA26 Test
Standard EPI layer (fab. end 2008) v.s. high resistivity EPI layer (fab. end 2009) Charge collection & S/N (Analogue output, Freq. 20 MHz)
EPI layer Standard (~10 .cm) 14 µm High resistivity (~400 .cm)
Charge Collection (55Fe source)
Seed 2x2 3x3 EPI seed 2x2 3x3
~21% ~ 54 % ~ 71 %
10 µm ~ 36 % ~ 85 % ~ 95 %
15 µm ~ 31 % ~ 78 % ~ 91 %
20 µm ~ 22 % ~ 57 % ~ 76 %
S/N at seed pixel
(106Ru source)~ 20 (230 e-/11.6 e-)
10 µm ~ 35
15 µm ~ 41
20 µm ~ 36
0.64 mV 0.31 mV
ENC ~ 13-14 e-
Recommended