Memory and Programmable Logic

Memory and Programmable Logic

Chapter 7

2Digital Circuits

7-1 Introduction

Memory information storage a collection of cells store binary information

RAM – Random-Access Memory read operation write operation

ROM – Read-Only Memory read operation only a programmable logic device

3Digital Circuits

Programmable Logic Device (PLD) ROM PLA – programmable logic array PAL – programmable array logic FPGA – field-programmable gate array

programmable logic blocks programmable interconnects

Fig. 7.1Conventional and array logic diagrams for OR gates

4Digital Circuits

7-2 Random-Access Memory

A memory unit stores binary information in groups of bits (words) 8 bits (a byte), 2 bytes, 4 bytes

Block diagram

Fig. 7.2Block diagrams of a memory unit

5Digital Circuits

A 1024 16 Memory

Fig. 7.3Contents of a 1024 16 memory

6Digital Circuits

Write and Read Operations Write operation

• Apply the binary address to the address lines• Apply the data bits to the data input lines• Activate the write input

Read operation• Apply the binary address to the address lines• Activate the read input

7Digital Circuits

Memory Description in HDL

Examples

8Digital Circuits

HDL Example 7.1

9Digital Circuits

Timing Waveforms

The operation of the memory unit is controlled by an external device

The access time the time required to select a word and read it

The cycle time the time required to complete a write operation

Read and write operations must synchronized with an external clock

10Digital Circuits

CPU clock – 50 MHz The access/cycle time < 50 ns A write cycle

Fig. 7.4Memory cycle timing waveforms

11Digital Circuits

A read cycle

Fig. 7.4Memory cycle timing waveforms (cont.)

12Digital Circuits

Types of Memories

Static Information are stored in latches remains valid as long as power is applied short read/write cycle

Dynamic Information are stored in the form of charges on

capacitors the stored charge tends to discharge with time need to be refreshed (read and write back) reduced power consumption Larger memory capacity

13Digital Circuits

Volatile lose stored information when power is turned off SRAM, DRAM

Non-volatile Retains its stored information after the removal of

power ROM EPROM, EEPROM Flash memory

14Digital Circuits

7-3 Memory Decoding A memory unit

the storage components the decoding circuits to select the memory word

A memory cell

Fig. 7.5Memory cell

15Digital Circuits

Internal Construction

A RAM of m words and n bits per word m*n binary storage cells Decoding circuits to select individual words

k-to-2k decoder

16Digital Circuits

A 4 4 RAM

Fig. 7.6Diagram of a 4 4 RAM

17Digital Circuits

Coincident Decoding A two-dimensional selection scheme

reduce the complexity of the decoding circuits

Fig. 7.7Two-dimensional decoding structure for a 1K-word memory

18Digital Circuits

A 10-to-1024 decoder 1024 AND gates with 10 inputs per gates

Two 5-to-32 decoders 2 * (32 AND gates with 5 inputs per gates)

Reduce the circuit complexity and the cycle time

19Digital Circuits

Address Multiplexing

To reduce the number of pins in the IC package consider a 64M1 DRAM

26-bit address lines Multiplex the address lines in one set of address

input pins

20Digital Circuits

An examples RAS – row address strobe CAS – column address strobe

Fig. 7.8Address multiplexing for a 64K DRAM

21Digital Circuits

Random Access MemoryRAS, CAS Addressing

Separate addressing into two cycles: Row Address, Column Address Saves on package pins, speeds RAM access for sequential bits!

Address RAS CAS Dout Valid

Col AddressRow Address

Read Cycle

Read RowRow Address Latched

Read Bit Within RowColumn Address Latched

Tri-stateOutputs

第三版內容，參考用 !

22Digital Circuits

Random Access Memory

Address RAS CAS WE Din Valid

Col AddressRow Address

(1) Latch Row Address Read Row

(2) WE low

(3) CAS low: replace data bit

(4) RAS high: write back the modified row

(5) CAS high to complete the memory cycle

Write Cycle Timing

第三版內容，參考用 !

23Digital Circuits

7-4 Error Detection And Correction

Improve the reliability of a memory unit A simple error detection scheme

a parity bit (Sec. 3-9) a single bit error can be detected, but cannot be

corrected An error-correction code

generates multiple parity check bits the check bits generate a unique pattern, called a

syndrome the specific bit in error can be identified

24Digital Circuits

Hamming Code

k parity bits are added to an n-bit data word (2k –1 n + k) The bit positions are numbered in sequence from

1 to n + k Those positions numbered as a power of 2 are

reserved for the parity bits The remaining bits are the data bits

25Digital Circuits

Example: 8-bit data word 11000100 Include 4 parity bits and the 8-bit word 12 bits

2k –1 n + k, n = 8 k = 4Bit position: 1 2 3 4 5 6 7 8 9 10 11 12

P1 P2 1 P4 1 0 0 P8 0 1 0 0 Calculate the parity bits: even parity assumption

P1 = XOR of bits (3, 5, 7, 9, 11) = 1 1 0 0 0 = 0

P2 = XOR of bits (3, 6, 7, 10, 11) = 1 0 0 1 0 = 0

P4 = XOR of bits (5, 6, 7, 12) = 1 0 0 0 = 1

P8 = XOR of bits (9, 10, 11, 12) = 0 1 0 0 = 1 Store the 12-bit composite word in memory.

Bit position: 1 2 3 4 5 6 7 8 9 10 11 120 0 1 1 1 0 0 1 0 1 0 0

26Digital Circuits

When the 12 bits are read from the memory Check bits are calculated

C1 = XOR of bits (1, 3, 5, 7, 9, 11)

C2 = XOR of bits (2, 3, 6, 7, 10, 11)

C4 = XOR of bits (4, 5, 6, 7, 12)

C8 = XOR of bits (8, 9, 10, 11, 12)

If no error has occurredBit position: 1 2 3 4 5 6 7 8 9 10 1112

0 0 1 1 1 0 0 1 0 1 0 0

C = C8C4C2C1 = 0000

27Digital Circuits

One-bit error error in bit 1

C1 = XOR of bits (1, 3, 5, 7, 9, 11) = 1

C2 = XOR of bits (2, 3, 6, 7, 10, 11) = 0

C4 = XOR of bits (4, 5, 6, 7, 12) = 0

C8 = XOR of bits (8, 9, 10, 11, 12) = 0

C8C4C2C1 = 0001

error in bit 5 C8C4C2C1 = 0101

Two-bit error errors in bits 1 and 5

C8C4C2C1 = 0100

28Digital Circuits

The Hamming code can be used for data of nay length k check bits 2k –1 n + k

29Digital Circuits

Single-Error Correction, Double-Error Detection Hamming code

Can detect and correct only a single error Multiple errors may not be detected.

Hamming code + a parity bit Can detect double errors and correct a single

error. The additional parity bit is the XOR of all the other

bits. E.g.: the previous 12-bit coded word

0 0 1 1 1 0 0 1 0 1 0 0 P13 0 0 1 1 1 0 0 1 0 1 0 0 1 (even parity).

30Digital Circuits

When the word is read from memory If P = 0 (XOR of all bits includes parity bits), the parity is

correct; P = 1, incorrect Four cases

1. If C = 0, P = 0, no error

2. If C 0, P = 1, a single error that can be corrected

3. If C 0, P = 0, a double error that is detected but cannot be corrected

4. If C = 0, P = 1, an error occurred in the P13 bit

31Digital Circuits

7-5 Read-Only Memory

Store permanent binary information 2k x n ROM

k address input lines enable input(s) three-state outputs

Fig. 7.9ROM block diagram

32Digital Circuits

32 x 8 ROM 5-to-32 decoder 8 OR gates

each has 32 inputs 32x8 internal programmable connections

Fig. 7.10Internal logic of a 32 8 ROM

33Digital Circuits

programmable interconnections close (two lines are connected) or open A fuse that can be blown by applying a high voltage pulse

Fig. 7.11Programming the ROM according to Table 7.3

34Digital Circuits

ROM truth table (partial) an example

35Digital Circuits

Combinational Circuit Implementation

ROM: a decoder + OR gates sum of minterms a Boolean function = sum of minterms For an n-input, m-output combinational ckt

2n m ROM Design procedure:

1. Determine the size of ROM

2. Obtain the programming truth table of the ROM

3. The truth table = the fuse pattern

36Digital Circuits

Example 7-1

3 inputs, 6 outputs B1=0

B0=A0

8x4 ROM

37Digital Circuits

ROM implementation Truth table

Fig. 7.12ROM implementation of Example 7.1

38Digital Circuits

Types of ROM

Types of ROM mask programming ROM

IC manufacturers is economical only if large quantities

PROM: Programmable ROM fuses universal programmer

EPROM: erasable PROM floating gate ultraviolet light erasable

EEPROM: electrically erasable PROM longer time is needed to write flash ROM limited times of write operations

39Digital Circuits

Combinational PLDs Programmable two-level logic

an AND array and an OR array

Fig. 7.13Basic configuration of three PLDs

40Digital Circuits

7.6 Programmable Logic Array

PLA an array of programmable AND gates

can generate any product terms of the inputs an array of programmable OR gates

can generate the sums of the products more flexible than ROM use less circuits than ROM

only the needed product terms are generated

41Digital Circuits

An exampleF1 = AB + AC + ABCF2 = (AC + BC)XOR gatescan invert the outputs

Fig. 7.14PLA with three inputs, four product terms, and two outputs

42Digital Circuits

PLA programming table specify the fuse map

43Digital Circuits

The size of a PLA The number of inputs The number of product terms (AND gates) The number of outputs (OR gates)

When implementing with a PLA reduce the number of distinct product terms the number of terms in a product is not important

44Digital Circuits

Examples 7-2 F1(A, B, C) = (0, 1, 2, 4); F2(A, B, C) = (0, 5, 6, 7) both the true value and the complement of the function

should be simplified to check

Fig. 7.15Solution to Example 7.2

45Digital Circuits

F1 = (AB + AC + BC) F2 = AB + AC + ABC

Fig. 7.14PLA with three inputs, four product terms, and two outputs

46Digital Circuits

7-7 Programmable Array Logic

a programmable AND array and a fixed OR array The PAL is easier to program, but is not as flexible

as the PLA

第三版圖片，參考用 !

47Digital Circuits

An example PAL product terms

cannot be shared

Fig. 7.16PAL with four inputs, four outputs, and a three-wide AND-OR structure

48Digital Circuits

An example implementation

w(A,B,C,D) = (2,12,13)

x(A,B,C,D) = (7,8,9,10,11,12,13,14)

y(A,B,C,D) = (0,2,3,4,5,6,7,8,10,11,15)

z(A,B,C,D) = (1,2,8,12,13) Simplify the functions

w = ABC + ABCDx = A + BCD

y = AB + CD + BDz = ABC + ABCD + ACD + ABCD = w + ACD + ABCD

49Digital Circuits

PAL programming table

50Digital Circuits

w = ABC + ABCDx = A + BCD

y = AB + CD + BDz = w + ACD + ABCD

Fig. 7.17Fuse map for PAL as specified in Table 7.6

51Digital Circuits

7-8 Sequential Programmable Devices

Sequential programmable logic device SPLD PLD + filp-flops

Fig. 7.18Sequential programmable logic device

52Digital Circuits

Macrocell

A typical SPLD contains 8-10 macrocells

Fig. 7.19Basic macrocell logic

53Digital Circuits

Programming features: AND array use or bypass the flip-flop select clock edge polarity preset or clear for the register complement an output programmable input/output pins

54Digital Circuits

Altera macrocell

Clk MUX

Output MUXQ

F/B MUX

Invert Control

AND ARRAY

CLK

pad

8 Product TermAND-OR Array

+Programmable

MUX's

Programmable polarity

I/O Pin

Seq. LogicBlock

Programmable feedback

第三版內容，參考用 !

55Digital Circuits

Complex PLD Put a lot of PLDS on a chip Add wires between them whose connections can

be programmed Use fuse/EEPROM technology

Fig. 7.20General CPLD configuration

56Digital Circuits

Field-Programmable Gate Array Emulate gate array technology Hence Field Programmable Gate Array You need:

A way to implement logic gates A way to connect them together

PALs, PLAs = 10 - 100 Gate Equivalents Field Programmable Gate Arrays = FPGAs

100 - 1000(s) of Gate Equivalents

57Digital Circuits

Logic blocks To implement combinational

and sequential logic Interconnect

Wires to connect inputs andoutputs to logic blocks

I/O blocks Special logic blocks at

periphery of device forexternal connections

Key questions: How to make logic blocks programmable? How to connect the wires? After the chip has been fabbed

Field-Programmable Gate Arrays

第三版內容，參考用 !

58Digital Circuits

Basic Xilinx Architecture

Fig. 7.21Basic architecture of Xilinx Spartan and predecessor devices

59Digital Circuits

Configurable Logic Block (CLB)

Fig. 7.22CLB architecture

60Digital Circuits

Interconnect Resources

Fig. 7.23RAM cell controlling a PIP transition gate

61Digital Circuits

Programmable Interconnect Point (PIP)

Fig. 7.24Circuit for a programmable PIP

62Digital Circuits

I/O Block (IOB)

Fig. 7.25XC4000 series IOB

63Digital Circuits

Enhancements

Fig. 7.26Distributed RAM cell formed from a lookup table

64Digital Circuits

Xilinx Spartan XL FPGAs

Fig. 7.27Spartan dual-port RAM

65Digital Circuits

Xilinx Spartan XL FPGAs

66Digital Circuits

Xilinx Spartan II FPGAs

67Digital Circuits

Xilinx Spartan II FPGAs

68Digital Circuits

Xilinx Spartan II FPGAs

Fig. 7.28Spartan II architecture

69Digital Circuits

Xilinx Spartan II FPGAs

Fig. 7.29Spartan II CLB slice

70Digital Circuits

Xilinx Spartan II FPGAs

Fig. 7.30Spartan II IOB

71Digital Circuits

Xilinx Virtex FPGAs

Fig. 7.31Virtex II overall architecture

72Digital Circuits

Xilinx Virtex FPGAs

Fig. 7.32Virtex IOB block