View
214
Download
0
Category
Preview:
Citation preview
PJM3401PSASingle P−Channel Power MOSFET
1 / 6www.pingjingsemi.com Revision:2.0 Aug-2018
Features The PJM3401PSA uses advanced trench
technology and design to provide excellentRDS(ON) with low gate charge.
High density cell design for ultra low RDS(ON)
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
VDSS=-30V
ID=-4.1A
RDS(ON)<6 5 mΩ@ VGS=10V
Applications
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
SOT-23
Absolute Maximum Ratings (TA=25unless otherwise stated)Symbol Parameter Rating Units
VDSS Drain-to-Source Voltage -30 V
ID Continuous Drain Current -4.1 A
VGS Gate-to-Source Voltage ±12 V
PD Power Dissipation 1.2 W
TJ,Tstg Operating Junction and Storage Temperature Range 150,–55 to 150
Symbol Parameter Typ. Units
RθJA Junction-to-Ambient 104 /W
1. Gate 2.Source 3.Drain
G S
D
2
3
1
Mark: R1
PJM3401PSASingle P−Channel Power MOSFET
2 / 6www.pingjingsemi.com Revision:2.0 Aug-2018
Electrical Characteristics (TA=25 unless otherwise specified)
Symbol Parameter Test ConditionsRating
UnitsMin. Typ. Max.
Off CharacteristicsVDSS Drain to Source Breakdown Voltage VGS=0V, ID=-250µA -30 -- -- V
IDSS Drain to Source Leakage Current VDS=-24,VGS=0V,TA=25 -- -- -1.0 µA
IGSS( F) Gate to Source Forward Leakage VGS =+12V -- -- 0.1 µA
IGSS( R) Gate to Source Reverse Leakage VGS =-12V -- -- -0.1 µA
On Characteristics
RDS(ON) Drain-to-Source On-Resistance Note1VGS=-10V,ID=-4.1A -- -- 65 mΩ
VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250µA -0.7 -- -1.3 V
Dynamic Characteristicsgfs Forward Transconductance Note1 VDS=-5V, ID=-5A 7 -- -- S
Ciss Input CapacitanceVGS =0V,VDS=-15V
f=1.0MHz
-- 954 --pFCoss Output Capacitance -- 115 --
Crss Reverse Transfer Capacitance -- 77 --
Resistive Switching Characteristicstd(ON) Turn-on Delay Time VDD = -15V
RG = -3.6Ω
VGS =-10V,
RG = 6.0Ω
-- -- 6.3
nstr Rise Time -- -- 3.2
td(OFF) Turn-Off Delay Time -- -- 38.2
tf Fall Time -- -- 12
Source-Drain Diode CharacteristicsVSD Diode Forward Voltage Note1 IS=-1A,VGS=0V -- -- -1 V
VGS=-4.5V,ID=-2A -- -- 85 mΩ
Note:
1 : Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.Pu
PJM3401PSASingle P−Channel Power MOSFET
3 / 6
Typical Curves
www.pingjingsemi.com Revision:2.0 Aug-2018
-0 -5-0
-5
-10
-15
-20
-25
-0 -100
30
60
90
120
150
180
-0 -2 -6 -80
30
60
90
120
150
180
-0-0.5 -2.5-1.0 -1.5 -2.0 -3.0
-1
-2
-3
-4
-5
-1E-5-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-1E-4
-1E-3
-0.01
-0.1
-1
-10
Ta=25Pulsed
Ta=25Pulsed
VGS=-10VVGS=-4.5V
VGS=-3.0V
VGS=-2.5V
VGS=-2.0V
Output Ch aracteristics
Drain
Current
I D
(A
)
-4-1 -2 -3 Drain to Source Voltage VDS (V)
Ta=25Pulsed
ID=-2A
—— VGSRDS(ON)
On-
Resistance
R
DS
(ON
) (m
Ω)
2- -4 6- 8-Gate to Source Voltage VGS (V)
Ta=25Pulsed
—— IDRDS(ON)
VGS=-10V
VGS=-2.5V
VGS=-4.5V
Ta=25Pulsed
-4
Drain Current ID (A)
On-
Resistance
R
DS
(ON
) (m
Ω)
Transfer C haracteristics
Drain
Current
I D
(A
)
Gate to Source Voltage VGS (V)
VSDSI ——
Sou
rce
Cur
rent
I S
(A
)
Source to Drain Voltage SD (V)
25 125-0.4
-0.6
-0.8
-1.0
-1.2
ID=-250uA
Threshold Voltage
Thr
esho
ld V
olta
ge
VT
H
(V
)
50 75 100
Junction Temperature Tj ()
PJM3401PSASingle P−Channel Power MOSFET
4 / 6
Package Outline
SOT-23(TO-236)
Ordering InformationDevice Package Shipping
PJM3401PSA SOT-23 3000/Reel&Tape(7inch)
1.0
0.8
2.2
1.9
1.0
0.8
SOT-23 (TO-236)
Recommended Soldering Pad
SymbolDimensions in millimeter
Min. Typ. Max.A 0.900 1.025 1.150
A1 0.000 0.050 0.100b 0.300 0.400 0.500c 0.080 0.115 0.150D 2.800 2.900 3.000
E 1.200 1.300 1.400HE 2.250 2.400 2.550e 1.800 1.900 2.000
L
0.550REFL1
0.300 0.500θ 0o 8o
www.pingjingsemi.com Revision:2.0 Aug-2018
PJM3401PSASingle P−Channel Power MOSFET
5 / 6
Conditions of Soldering and Storage
Recommended condition of reflow soldering
Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:
Time length of peak temperature (longer) Time length of soldering (longer) Thickness of solder paste (thicker)
Conditions of hand soldering
Temperature: 370 OC Time: 3s max. Times: one time
Storage conditions
Temperature5 to 40 OC
Humidity30 to 80% RH
Recommended periodOne year after manufacturing
www.pingjingsemi.com Revision:2.0 Aug-2018
PJM3401PSASingle P−Channel Power MOSFET
6 / 6
SOT-23 (TO-236)
30,000 pcs per box10 reels per box
120,000 pcs per carton 4 boxes per carton
3,000 pcs per reel1
2
3
455
240
435
220
217
210
Cover Tape
Carrier Tape
1.The method of packaging and dimension are shown as below figure. (Units:mm)
2.. Tape and reel data (Units:mm)
1Pin N
4.0
4.0
8.0
G
Symbol
B
Ø 54.5±0.2C
12.3±0.3D 9.6+2/-0.3T1 1.0±0.2T2 1.2±0.2N 3.15±0.1G 1.25±0.1
AValue (unit: mm)
EF
Ø 177.8±12.7±0.2
Ø 13.5±0.2 Reel (7'')
Tape (8mm)
A
B
C
E
F
T1
D
T2
www.pingjingsemi.com Revision:2.0 Aug-2018
Recommended