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Hoja de datos de algunos diodos
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DIODOSDATASHEET
Universidad Privada TELESUP
Alumno: Juan C. Riva M.
Carrea: Ing. De Sistemas y Computación
Curso: Física Electrónica
Facultad: Ingeniería y Arquitectura
Abril 2014
Diodo Zener – 1N4728A
Diodo Supresor – P6KE10A
Diodo Schottky – 1N5817
DO - 41
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate current by 20%)
RATIN G S
SYMBOL
1N5817
1N5818
1N5819
UNITS
Maximum Repetitive Peak Reverse Voltage VRRM 20 30 40 V Maximum RMS Voltage VRMS 14 21 28 V Maximum DC Blocking Voltage VDC 20 30 40 V Maximum Average Forward Rectified Current
(9.5mm lead length, at T =90oC) L
I
1.0
A
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
I
25
A
Maximum Forward Voltage (at 1.0A DC) VF 0.45 0.55 0.6 V o
Maximum DC Reverse Current Ta=25 C o
(at rated DC blocking voltage) Ta=100 C
IR 1.0
10.0 mA mA
Typical Junction Capacitance (Note 1) CJ 110 pF
Typical Thermal Resistance (Note 2) R(ja) 50 oC/W Storage and Operation Junction Temperature TSTG,TJ -65 to +125 oC Note:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, vertical P.C. board mounted
Diodo Rectificador – 1N4004
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