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Researchers at the Department of Electrical & Computer Engineering at the National University of Singapore (NUS) Faculty of Engineering have announced that they have developed new Magnetoresistive Random Access Memory (MRAM) technology, which could be used to boost information storage in electronic systems, while also enhancing memory, ensuring that fresh data remains intact. - See more at: http://www.storetec.net/news-blog/new-innovation-by-nus-researchers-breaks-new-ground-in-information-storage
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New innovation by NUS researchers breaks new ground in information storage
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Researchers at the Department of Electrical & Computer Engineering at the National University of Singapore (NUS) Faculty of Engineering have announced that they have developed new Magnetoresistive Random Access Memory (MRAM) technology, which could be used to boost information storage in electronic systems, while also enhancing memory, ensuring that fresh data remains intact.
The sophistication of the new technology means that data is protected even when there is a power failure.
The team, led by Dr Yang Hyunsoo, has confirmed that it has already filed a US provisional patent for the device.
Researchers behind the development claim that it could soon be used in consumer electronics such as laptops and mobile phones, as well as being applied to transportation, military and avionics systems, industrial motor control and robotics, industrial power and energy management.
Dr Yang said: "From the consumer's standpoint, we will no longer need to wait for our computers or laptops to boot up. Storage space will increase, and memory will be so enhanced that there is no need to regularly hit the 'save' button as fresh data will stay intact even in the case of a power failure. Devices and equipment can now have bigger memory with no loss for at least 20 years or probably more. Currently pursued schemes with a very thin magnetic layer can only retain information for about a year."
He added that the chip could soon help to aid our daily lives, which are increasingly relying on mobile phones, with there being a constant need to charge them on an almost daily basis. Yet with the implementation of this new technology, this could soon be undertaken on a weekly basis instead.
It could also change the structure of computers, making them easier to manufacture, while also signalling the end of things such as flash memory, which in turn could bring down costs.
Major players such as Samsung, Intel, Toshiba and IBM are among the firms that have said they intend to intensify research efforts into MRAM.
Storetec News/Blogs “http://www.storetec.net/news-blog/new-innovation-by-nus-researchers-breaks-new-ground-in-information-storage
”. New innovation by NUS researchers breaks new ground in information storage. December 31, 2013. Storetec.
