貢獻於電動車演變的半導體元件 · PDF fileTypical 3-phase inverter circuit GD: Gate Driver Isolator GD GD GD ... Easy design of PCB layout ... Horn Head Lamp Tail / Stop

© 2017 ROHM Co.,Ltd. All Rights Reserved

貢獻於電動車演變的半導體元件

Chris Lin Rohm Semiconductor Taiwan Design Center

April 20, 2017

P. 1 © 2017 ROHM Co.,Ltd. . All Rights Reserved.

Agenda

(1) xEV Trend

(2) Main Appliation for xEV

(3) Electronics for xEV

- 3.1 Main Inverter

- 3.2 DC/DC Converter

- 3.3 On Board Charger

(4) Rohm Activities for Automotive Application


Agenda

(1) xEV Trend

(2) Main Application for xEV


- 3.1 Main Inverter




P. 3 © 2017 ROHM Co.,Ltd.

xEV Application

①On Board Charger ②DCDC Converter ③Main Inverter

HEV Structure Example

⇒ Main Block includes:

Inverters / DCDC

Converters / Electric

compressors /

Battery chargers


Effect on xEV application

Low Ron Resistance

High Frequency Operation

High Temperature Operation

Air Cooling

Coil and Condenser Down Sizing

Simplify Cooling System

Small Size Device / High Efficiency

Water Cooling

1 2

1 10

1 5

0

50

100

150

200

250

0 5 10 15 20

ＶGS ＝１８Ｖ

１６Ｖ

１４Ｖ

１２Ｖ

１０Ｖ

８Ｖ

６Ｖ

４Ｖ

２Ｖ

０Ｖ

200℃ 250℃


Discrete

LSI

Rohm Solution for xEV Application

SiC Device IGBT Si-MOSFET Si-Diode Shunt Resistor

Gate Driver Isolator Temp Monitor BMS IC Power IC IPD Standard LSI


Agenda

(1) xEV Trend



- 3.1 Main Inverter





Main Inverter

• Convert Battery Voltage into 3-Phase AC Voltage to Drive Motor

Block diagram

■Discrete

■LSI

Description

Focused Products

High voltage side Isolated Gate Driver

Isolator

Temperature monitor

High voltage monitor

Power supply

Op-amp comparator

EEPROM

SiC-MOSFET

MOSFET

BipTr

Schottky barrier diode

Fast recovery diode

Anti-surge chip resistor

Wide terminal type chip resistor

Low voltage side

Isolated Gate Driver


DCDC Converter

■Discrete

■LSI

Block diagram

Description

Focused Products


Isolator

Temperature monitor


Power supply

Op-amp comparator

EEPROM

SiC-MOSFET

SiC-SBD

SJ-MOSFET

BipTr


Fast recovery diode

High power Shunt resistor


High voltage side Low voltage side

• Supplying Power Efficiently to the Engine under All Operating Condition for xEV.


Isolated

Feature: ・ Small Area ・ High Reliability and Robustness ・ High Speed

Small-packaged Gate Driver with Integrated Isolators

EV/HEV system example

Battery module Inverter Motor

Motor

Typical 3-phase inverter circuit

GD: Gate Driver

Isolator

GD

GD

GD

GD GD

GD

Integrated

Isolator/gate Driver to be

used for driving High-voltage

MOSFET and IGBT in High

current / High voltage

application units

Isolated Gate Driver Main Technology

P. 10 © 2017 ROHM Co.,Ltd.

Small Area

SSOP-B20W

Cu Island

Coreless Transformer

Low Voltage High Voltage

Cu Coil

Bonding PAD

Details of Isolation Technology

P. 11 © 2017 ROHM Co.,Ltd.

48V Battery System for Mild HEV

Automotive Market Trend：Automotive Battery 48V

Power

Input Output

12V 3.3V

Power 48V 3.3V

Higher

Existing

48V

Power Source Trend

ON DUTY becomes smaller

Input high

電源

電圧変換器

電圧変換器 48V

48VHEV Motor Battery

48V

48V Mild Hybrid EV

250V

250VHEV Motor Battery DC/DC Converter

12V

3.3V

3.3V

3.3V

3.3V

3.3V

3.3V

Power

Power

ECU

ECU

ECU

ECU

ECU

ECU

Existing HEV Syste,

48V Mild HEV with smaller motor

HEV DC12V(Li,Pb)

Better

Efficiency

P. 12 © 2017 ROHM Co.,Ltd.

Direct Step-Down (48V to 3.3V) DC/DC

• Short 20ns pulse width to make stable 3.3V output from 48V for 2.0 MHz operation.

• Integrating high voltage MOSFET to expand the input voltage from 12V to 65V.

P. 13 © 2017 ROHM Co.,Ltd.

On-Board Charger

■Discrete

■LSI

Description

Focused Products


Isolator

Temperature monitor


Power supply

Op-amp comparator

EEPROM

SiC-MOSFET

SiC-SBD

SJ-MOSFET


Fast recovery diode

Shunt resistor


Block diagram

High voltage side Low voltage side

• Converting Household AC Supply to DC for High Voltage Battery Charging.

P. 14 © 2017 ROHM Co.,Ltd.

Superior Material Properties of SiC

Compound semiconductor which has 1 x 1 covalent bond of Si and C

Extremely hard material

new mohs hardness ：13 ・・・ Diamond (15)

SiC Wafer

Electric Breakdown Field (V/cm)

Electron Saturation Velocity (x107cm/s)

Bandgap (eV) Thermal Conductivity (W/cm・℃)

Lower Loss：x1/10 Higher Voltage：x10

Higher Temp Operation： x3

Higher Temp Endurance：x3

Cooling： x3

Higher Frequency ：x10

２４

１Ｋ

３Ｋ

１

3

3

１１05

１06

Si

GaN

Using SiC for Device Manufacturing beyond Si

SiC

SiC

Melting Point (℃)

P. 15 © 2017 ROHM Co.,Ltd.

Diode Transistor Note

Si

Bipolar

device

PND

(FRD)

IGBT ○Low Ron by hole injection (conductivity modulation)

× Slow reverse recovery (FRD)

× Tail current (IGBT)

Si

Unipolar

device

SBD MOSFET

SJ-MOSFET

○Fast SW speed

× High RonA at HV

× SJ-MOS 900V

× Terrible body diode recovery

SiC

Unipolar

device

SBD MOSFET ◎Very low RonA

○Fast SW speed

◎Ultra fast recovery (SBD/ body-

diode of MOS)

◎Operate at 200℃~

Comparison Between Si and SiC Devices

P. 16 © 2017 ROHM Co.,Ltd.

SiC for xEV Application

■ Market Trend Estimation

① On-Board Charger

➁ DCDC Converter

➂ Main Inverter

SiC-SBD + Si-MOSFET SiC-SBD + SiC-MOSFET

Si-MOSFET SiC-MOSFET

Si-IGBT + Si-FRD SiC-MOSFET

2016 2019 2017 2018 2020 2021 2022

①On Board Charger ②DCDC Converter ③Main Inverter

P. 17 © 2017 ROHM Co.,Ltd.

Rohm Status for SiC Power Devices

■ Production Status

2010/4

SiC-SBD MP start

2010/12

World 1st SiC-DMOS MP start

2012/5

World 1st Full SiC module MP start

2015/6

World 1st SiC Trench MOS MP start

P. 18 © 2017 ROHM Co.,Ltd.

SiC for On-Board Charger

Fast charging for EV/HEV

SiC SBD, SiC MOSFET, Gate Driver

P. 19 © 2017 ROHM Co.,Ltd.

SiC-SBD for Automotive On-Board Charger

Automotive Grade SiC SBD line-up is available.

Design-in or under production at many WW automotive customers.

Japan

Asia Europe North

America

In mass production

Design-in

■ WW Design-in Cases

10A 20A 30A 40A

SMD 650V

Insertion type

650V

1200V

■ Automotive SiC-SBD Line-up

6A to 20A SCS2□□AJHR

TO-263AB

TO-220AC

TO-247

6A to 20A SCS2□□AGHR

20A to 40A SCS2□□AE2HR

10A to 40A SCS2□□KE2HR/ SCS2□□KE2AHR

5A to 20A SCS2□□KGHR

P. 20 © 2017 ROHM Co.,Ltd.

Rohm Next Generation SiC-MOSFET

2G SiC-MOSFET

Using Trench Gate

Realize Lower On-Resistance

World 1st

Next Generation (3G) SiC-MOSFET

＜Conventional Single-Trench＞ Electric Field

under Gate Trench

Bottom portion

＜Rohm Double-Trench＞ Electric Field

Decentralized

under Gate Trench

Bottom portion

Source Trench in addition to Gate Trench

High

Low

High

Low

P. 21 © 2017 ROHM Co.,Ltd.

Next Generation SiC-MOSFET

0

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

0 20 40 60 80 100 120 140 160

Cis

s (p

F)

Ron@25℃ (mΩ)

2nd Gene. SiC-MOSFET

80mΩ 1200V

40mΩ 1200V

3rd Gene. SiC-MOSFET

Ron ▲50% Ciss ▲35%

Same Chip Size Comparison with 2nd Generation

SiC-MOSFET

On-Resistance (Ron) vs. Input Capacitance (Ciss)

P. 22 © 2017 ROHM Co.,Ltd.

Exploring the Possibilities of SiC

ROHM SiC power devices adopted in inverters for the world’s premiere race

class for electric-powered cars: Formula E Venturi Team

2kg lower

Decreases inverter size and weight

Inverter Utilizing SiC

SBDs

Conventional Inverter

30％ smaller size of

cooling system

1.7% higher

Mounted in the inverter used for machine drive

Efficiency

Season 3 begins in October 2016 at the Hong Kong Grand Prix

Weight

Volume


What’s the IPD (Intelligent Power Device)

Protected Functions + Power MOSFET

◇IPD Feature

Rich Protection(UVLO , THD , OCP , etc)

Reduction of mounting area (Compare with Discrete)

Easy design of PCB layout

Intelligent Power Device

Sometimes IPD is called IPS, Smart SW or Protected FET


Door Lock

Door Mirror

Power Window

Sun Roof

Starter

Wiper

Washer

Rear defogger

Horn

Head Lamp

Tail / Stop Lamp

Fog Lamp

Indicator

Back Lamp

Room Lamp

Entrance Lamp

Grove box, Ash tray

Various Indicator

Ignition Coil

Fuel Injector

Bulb Timing Solenoid

Flow Control Solenoid

Oil Cooler

ABS Solenoid

Actuator Relay

Motor Relay

Shift Solenoid

Shift Lock

Key Lock

Lock Up Solenoid

AT Control

Engine

Control

Lighting

Lamp

Oil Suspension

Control

ABS Control

Body

Electronics

Automotive IPD Application

P. 25 © 2017 ROHM Co.,Ltd.

Agenda

(1) xEV Trend



- 3.1 Main Inverter




P. 26 © 2017 ROHM Co., Ltd.

Rohm Corporate Data

900E02A

Date Established

Paid-in Capital

President

Net Sales

Number of Employees

ROHM Group Companies

September 17,1958

￥86,969 million as of March 31, 2016

Satoshi Sawamura

￥352,397 million for the year ending March 31, 2016

21,171 as of March 31, 2016

Japan: 12 Global: 34

ICs

47%

36%

Others

7%

Modules

10％

Quality is our top priority at all times.

Our objective is to contribute to the advancement and progress of our culture

through a consistent supply, under all circumstances, of high quality

products in large volumes to the global market.

Sales by Product Category

(Consolidated)

COMPANY MISSION

Discrete

Semiconductor

Devices


To Smart Car / Future Car

• Electric Power

• More Electronic Devices

• Evolution of Artificial Intelligence Source: Ericsson

Source: Rohm Website


Electric Power with More Electronic Devices

Source: Rohm Website


Rohm at Japan Ceatec 2016 & CES 2017

Hi-Res Audio Audio IC

Smart Entry Auto Tilt Steering Motor Driver

Ignition, etc. – various Switch Touch Switch Conditoon check

Pulse Sensor Hi-Res LCD Panel PMIC TCON Source Dr. / Gate Dr. LVDS

Smart Entry Touch Switch Bluetooth Module

Hi-Mirror Less Video IC

Back Monitor Info Display Sensor, Video IC

Smart Phone Holder Wireless Charger

Driver Detection IR Image Sensor

LED Lamp ADB

Sequential Turn LED Matrix Driver

LED Lamp Diagnosis System Color Sensor

© 2017 ROHM Co.,Ltd.

Documents

貢獻於電動車演變的半導體元件 · PDF fileTypical 3-phase inverter circuit GD: Gate Driver Isolator GD GD GD ... Easy design of PCB layout ... Horn Head Lamp Tail / Stop