- a, b, : angles
- 1
Indices of directions : [uvw]
/
b
c
a
1
1
- 2
Hexagonal
’13
(dhkl)
LiAl 0.24
Mn 1.76
O 4
.u .]
n = 2d sin
: X-
n : (1,2,3….)
d :
: Bragg
1+2
LiAl 0.24
Mn 1.76
O 4
.u .]
Perovskite Hexagonal Diamond Cubic
Bragg X-Ray Diffractometer (phase) : ICDD PDF cards
ICDD (International Center for Diffraction Data)
PDF ( Powder Diffraction File)
DAD Rocking Curve - : AlxGa1-xAs/GaAs Epilayer
AlGaAs x = 0.25
Sf cos2
’13
’13
TAD /2 scan and RSM for AlxGa1-xN/GaN
- TAD /2 scan AlGaN (Al )
- TAD /2 scan
-2000 -1000 0 1000 2000
t = 1200 X = 0.12
TAD
DAD
GaN
Al composition (%) Thickness (nm)
RSMs for InxGa1-xN/GaN epilayers
TAD
GaN
In te
1 6 20
2 70 70
C-plane sapphire (substrate)
Semi-Insulating GaN : 2
AlxGa1-xN FWHM (arcsec)
GaN(002) ~ 300
GaN(102) ~ 780
60 mol/min
80 mol/min
100 mol/min
120 mol/min
In te
5.1463 5.1356 5.1249 5.1148
D (=2C13/C33)
AlGaN /
’13
RSM(Reciprocal space map) : GaN(105) TMAl
(μmol/min) 60 80 100 120
5.1512 5.1413 5.1319 5.1230
3.1689 3.1625 3.1565 3.1512
FWHM
(arcsec, ) 450 480 500 500
3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1
0.00
0.05
0.10
0.15
0.20
GaN (eV) 3.42
AlN (eV) 6.30
x (%) 17.7 21.5 25.6 29.1
I(AlGaN)/I(GaN) 1.19 0.44 0.20 0.08
• Bowing parameter (b) : 1.3 eV
GaN GaN
’13
- direction
of the GaN ReLP 1 2 3 4 5 6
0.08
0.09
0.10
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
3.1890
3.1893
3.1896
3.1899
3.1902
3.1905
3.1908
3.1911
W60
W45
o m
The degree of
Barrier thickness : 7.5 nm)
LT - PL
300 350 400 450 500 550 600 650 700 750 800
W60
W45
W30
W15
0.0
0.1
0.2
0.3
0.4
0.5
W60
W45W30W15
a ti o
’13
(Standard Test Method for Determining the Orientation of
a Semiconductive Single Crystal)
d1
: d1 = √d(0) 2 + d(90)
2
- d1 p (/ )
- (bending),
Reference edge
– GaN/Sapphire surface
(100)
x
y
z
(off-cut angle miscut angle)
[1] D. Lu, D.I. Florescu, D. S. Lee, V. Merai, J. C. Ramer, A.
Parekh, and E. A. Armour, J. of Crystal Growth 272, 353
(2004).
[2] A. Nakamura, N. Yanagita, T. Murata, K. Hoshino, and K.
Tadatomo, phys. Stat. sol. (c) 5 (6), 2007 (2008).
’13
6” – Spec.