073 MLCC SMD NP0 X7R X5R Y5V - FrelTec · PDF fileFrelTec Capacitor SMD MLCC 6/12/2016 2/36 © FrelTec® GmbH Please read cautions and warnings and important notes at the end of this

6/12/2016 1/36© FrelTec GmbH www.freltec.comPlease read cautions and warnings and important notes at the end of this document.

FrelTec GmbH

Mathildenstr. 10A82319 Starnberg

Germany

Multilayer Ceramic CapacitorsMLCC

SMD

FrelTecCapacitor SMD MLCC

6/12/2016 2/36© FrelTec® GmbH www.freltec.comPlease read cautions and warnings and important notes at the end of this document.

SPECIFICATION

PartNumber

073 05* N* 101* J* 500* T10* _**

Type Size Series Capacitance in pF

Tolerance RatedVoltage[V DC]

Packing Thickness of

chip code**

(optional **)

073 : MultilayerCeramic

Capacitors

02 : 0402 G : C0G(NP0)

_ _ _

First twodigits

indicate

B : ±0,10pF 063:6,3V T10: Reel10kpcs , papertape (7”reel)Size: 0402

A(0,50±0,10mm)

03 : 0603 H : C0GHQ

(NP0)Higher Qand lower

ESR

thesignify-

cant digits

C : ±0,25pF 100:10V T04: Reel4kpcs, papertape (7”reel)Size: 0603,0805, 1206 ( all≤0,85 thickness)

B(0,60±0,10mm)

05 : 0805 X : X7R _ _ _The last

digit is themultiplier

whichdenotes

the

D : ±0,5pF 160:16V E02: Reel2kpcs,embossed tape(7”reel)Size: 0805,1206, 1210 (all>0,85 thickness)

C(0,80±0,10mm)

06 : 1206

F : ±1%

250:25VD

(0,85±0,10mm)

10 : 1210 Y : Y5V number ofzero

followingIf the

capacitance is less

G : ±2%

500:50V E01: Reel1kpcs,embossed tape(7”reel)Size: 1812 (≤2,0

thickness), 2220(≤1,25 thickness)

E(1,0±0,10mm)

08 : 1808 J : ±5% 101:100VF

(1,25±0,20mm)

12 : 1812 R : X5R than10pF,“P” is

designated for a

K : ±10% 201:200V E0S : 700pcs,embossed tape(7”reel)Size: 1812,2220 (all >1,25thickness)

G(2,0±0,20mm)

20 : 2220 M: ±20% 102 :1000V

H(1,6±0,20mm)

22 : 2225 W : X7RSandwich

type

decimalpoint.

Z : + 80%- 20%

202 :2000V

B10: bulkpacking(10kpcs)

M(2,5±0,30mm)302 :

3000V* not all

combination ispossible

**Chip thinks

must not begiven in the

ordering code.

All products according to RoHS (2011/65/EU)

Example capacitance: 102 is 1000pF, 4P7 is 4,7pF, 0P5 is 0,5pF.



Rated Voltage, Rated Capacitance and available Tolerances

SizeCode

RateVoltage

/UR

Rate Capacitance

C0G (NP0) X7R X5R Y5V

CapacitanceTolerance

ChipThick-ness


ChipThick-ness


ChipThick-ness


ChipThick-ness

0603

50V0,5pF~4,9pF C C

100pF~100nFJ, K,

MC

100pF~100nF

J, K,M

C2,2nF~470n

FM, Z C

5,0pF~9,9pF D C10pF~1,5nF J C

25V 470pF~2,2nF J C 56nF~1µFJ, K,

MC 56nF~1µF

J, K,M

C 68nF~1µF M, Z C

16V 150nF~2,2µFJ, K,

MC 150nF~1µF

J, K,M

C 220nF~1µF M, Z C

10V 150nF~4,7µFJ, K,

MC

150nF~2,2µF

J, K,M

C680nF~2,2μ

FM, Z C

6,3V 470nF~10µFJ+,

K, MC

470nF~10µF

J+,K, M

C 4,7µF~10µF M, Z C

0805

50V

0,5pF~4,9pF C, D B 100pF~200pFJ, K,

MB

100pF~330pF

J, K,M

B10nF~820nF

M, Z D

5,0pF~9,9pF D B 470pF~820nFJ, K,

MD

470pF~820nF

J, K,M

D1µF M, Z F

10pF~2,7nF J B 1µFJ, K,

MF 1μF

J, K,M

F

25V 3,3nF~8,2nF J D 2,2µF~4,7µF K, M F2,2μF~ 4,7μF

K, M F 2,2µF M, Z F

16V 10nF J D 10μF K, M F 10μF K, M F 4,7µF M, Z F

10V 22μF K, M F 10µF M, Z F

6,3V 47μF K, M F 47µF M, Z F

1206

50V

0,5pF~4,9pF C, D D 100pF~330nFJ, K,

MD

100pF~330nF

J+,K, M

D 10nF~330nF

M, Z D5,0pF~9,9pF D D

470nF~2,2μF J+,

K, MF

470nF~2,2μF

J+,K, M

F10pF~5,6nF J D

470nF~2,2μF

M, Z F

25V 10nF J F470nF~2,2µF

J+,K, M

F470nF~2,2µ

FJ+,

K, MF

470nF~2,2μF

M, Z F

4,7µF K, M H 4,7µF K, M H 4,7µF K, M H

16V 10nF J F 4,7μF~10μF K, M H 4,7μF~10μF K, M H4,7μF M, Z H

10μF M, Z F

10V 22μF K, M H 22μF K, M H 22μF M, Z H

6,3V 47µF K, M H47μF~100μ

FK, M H 47μF M, Z H



SizeCode

RateVoltage

/UR

Rate Capacitance

C0G (NP0) X7R X5R Y5V


ChipThick-ness


ChipThick-ness


ChipThick-ness


ChipThick-ness

1210*

50V

1nF~18nF J F 470nF K, M G 470nFJ+,

K, MF 4,7μF M, Z

H,G

22nF~39nF J H1µF, 2,2µF K, M H

1µFJ+,

K, MH

10μF M, Z G47nF J G 2,2µF

J+,K, M

G

25V

1nF~18nF J F4,7µF K, M G 4,7µF

J+,K, M

G

2,2μF~10μF M, Z G22nF~39nF J H

47nF J G10µF K, M M 10µF

J+,K, M

M56nF~68nF J G

16V27nF J F 4,7µF K, M

H,G

4,7µF K, MH,G

22μF M, Z M33nF~68nF J H 10µF K, M G 10µF K, M G82nF~100nF J G 22µF K, M M 22µF~47µF K, M M

10V 22µF M M 47µF M M22μF M, Z M

47μF M, Z M

6,3V 100µF M M 100µF M M 100μF M, Z M

1812*

50V

1nF~10nF J F2,2μF K, M

F,H

2,2μF K, MF,H

10μF M, ZG,M

18n~33nF J H39nF~47nF J H

4,7μF K, M G 4,7μF K, M G56nF~100nF J G

25V1nF~10nF J F 10μF K, M

G,M

10μF K, MG,M

22μF M, Z M18n~47nF J H

22μF K, M M 22μF K, M M56nF~120nF J G

16V 56nF~220nF J G 22μF K, M M 22μF K, M M 47μF M, Z M

10V 100μF M, Z M

2220*

50V 100pF~2,2nF J E 10μF K, M M 10μF K, M M 2,2μF~10µF M, Z G

25V 10μF K, M M 10μF K, M M 22µF~47μF M, Z M

16V 100μF M, Z M

2225*

50V 56nF J E 10μF J+,

K, MM 10μF

J+,K, M

M 22μF M, Z G

25V 10μFJ+,

K, MG 10μF

J+,K, M

G 47μF M, Z G

*Thickness of 1210, 1812 and 2220 parts should be double check before order.+Please check availability with sales. Products have longer lead time.

C0G is below 10pF: 0,5pF, 1,0pF, 2,2pF, 3,6pF, 4,7pF, 5,6pF, 6,8pF, 8,2pF to 10pF

after 10pF is E12 series, additionally: 20pF, 30pF and 200pF

above 1nF: E12

additional cap values upon request

X7R and X5R 1206 and smaller is E12 series

above 1µF is E3 series

1210 and bigger size: E3 series

Y5V E6 and

above 1µF E3 series

for 1206 and bigger already above 470nF E3 series.



Electrical Data

Size 0402, 0603, 0805, 1206, 1210, 1812

Dielectric NP0/COG X7R X5R Y5V

Rated voltage(VDCW)

6.3V,10V,16V, 25V,50V

6,3V, 10V, 16V, 25V, 50V

Q*Cap<30pF:Q≥400 +20Cp Cap≥30pF: Q≥1000

Rated voltage D.F. Rated voltage D.F. Rated voltage D.F.≤10V ≤5.0% ≤10V ≤7.0% ≤10V ≤12.5% max. 16V ≤3.5% 16V ≤6.0% 16V ≤9.0% ≥25V ≤3.5% ≥25V ≤5.0% ≥25V ≤7.0%max.

OperatingTemperature

-55°C to 125°C -55°C to 85°C -30°C to 85°C

TemperatureCoefficient

0±30ppm/°C ±15% ±15% +22%/ -82%

WithstandingVoltage

250% rated voltage 250% rated voltage 300% rated voltage 250% rated voltage

Insulationresistance at Ur**

≥10GΩ or R×C≥500Ω-F Whichever is smaller

Termination Ni/Sn (lead-free termination)

* Measured at the condition of 40~70% related humidity,15~35°C ambient temperature

NP0/COG: Apply 1,0±0,2Vrms, 1,0 MHz±10% for Cap≦1000pF and 1,0±0,2Vrms, 1,0kHz±10% for Cap>1000pF, 25°C ambient temperature

X7R/X5R: Apply 1,0±0,2Vrms, 1,0 kHz±10% Cap≦10uF and 0.5±0,1Vrms, 120Hz±24HzCap>10uF at the condition of 25°C ambient temperature

Y5V: Apply 1,0±0,2Vrms, 1,0 kHz±10% Cap≦10uF and 0.5±0,1Vrms, 120Hz±24HzCap>10uF at the condition of 25°C ambient temperature



Typical Characteristics Curves of normal C0G part



Typical Characteristics Curves of normal X7R part



Typical Characteristics Curves of normal X5R part



Typical Characteristics Curves of normal Y5V part



Special Parts

Sandwich Type with better mechanical strength

1. Sandwich MLCC is quite better in mechanical strength.2. Sandwich MLCC is a little worse in temperature coefficient but it can meet X7R

temperature characteristic and meet the application requirement.3. They are quite similar in other characteristics, refer to below charts.

SummarySandwich MLCC has the following advantage:

1. Increase the strength greatly.2. Decrease the reject rate of MLCC break.3. Can be used in critical condition (such as monolithic capacitor production)

SizeCode

RateVoltage

/UR

Rate Capacitance

X7R

CapacitanceToleran

ce

ChipThick-ness

0603

50V 220pF~100nF K C

100V 220pF~18nF K C

200V 220pF~6,8nF K C

250V 220pF~6,8nF K C

0805

50V220pF~100nF K B,D150nF~1uF K D

100V220pF~68nF K D,F

100nF K F

200V220pF~22nF K D,F27nF~47nF K F


500V220pF~1nF K D,F

2.2nF K F

1206

50V 220pF~220nF K D

100V220pF~27nF K D,F

33nF~100nF K F



630V 220pF~22nF K F

1000V220pF~1nF K D,F2.2nF~10nF K F

2000V 220nF~1nF K D,F

Please check with sales if other type are available.



Comparison- flexural strength - Sandwich Type

Body strength

Bend strength

Sandwich’s strength is twice to three times of common product’s



Comparison - Capacitance value distribution - Sandwich Type

Common product

Sandwich product



Comparison-dissipation angle tangent- almost the same - Sandwich Type

Comparison-Insulation resistance – Sandwich is a little higher than common



Comparison-Withstanding voltage- almost the same

Comparison-temperature coefficient-almost the same

Comparison-resistance to soldering heat - Sandwich Type

Resistance to soldering heat - 0805, X7R, 10nF, 50V, 10%

Item Common MLCC Sandwich MLCC△C/C(Average) -1.76% -1.79%DissipationFactor(Maximum)

1.04% 1.04%

InsulationResistance(Minimum)

37.00GΩ 38.53GΩ



Comparison-moisture resistance, steady state - Sandwich Type

Moisture resistance, steady state - 0805, X7R, 10nF, 50V, 10%


1.07% 1.06%


38.62GΩ 40.15GΩ

Comparison- humidity test - Sandwich Type

Humidity test comparison - 0805, X7R, 10nF, 50V, 10%

Item Common MLCC Sandwich MLCC△C/C(Average) 2.63% 2.67%DissipationFactor(Maximum)

0.98% 0.99%


0.61GΩ 0.69GΩ

Comparison-life test - Sandwich Type

Life test comparison - 0805, X7R, 10nF, 50V, 10%


0.96% 0.95%


1.37GΩ 1.50GΩ

Comparison-temperature cycling test - Sandwich Type

Temperature cycling test comparison - 0805, X7R, 10nF, 50V, 10%

Item Common MLCC Sandwich MLCC△C/C(Average) -2.42% -1.93%InsulationResistance(Minimum)

11.40GΩ 13.19GΩ



High Voltage, Rated Voltage, Rated Capacitance and available Tolerances

SizeCode

RateVoltage

/UR

Rate Capacitance

C0G X7R

CapacitanceTolera

nce

ChipThick-ness

CapacitanceTolera

nce

ChipThick-ness

0603

100V0,5pF~4,9pF C C 100pF~18nF J,K C5,0 pF~9,9pF D C10pF~820pF J C

200V0,5pF~4,9pF C C 100pF~6,8nF J,K C5,0 pF~9,9pF D C10pF~470pF J C

250V0,1pF~4,9pF C C 100pF~6,8nF J,K C5,0 pF~9,9pF D C10pF~470pF J C

0805

100V

0,5pF~4,9pF C B 100pF~270pF J,K F5,0 pF~9,9pF D B 330pF~1nF K D,F10pF~330pF J,K B 1,5nF~100nF K F390pF~1,5nF J,K B

200V


250V


500V

0,5pF~4,9pF C B 100pF~270pF J,K F5,0 pF~9,9pF D B 330pF~1nF K D,F10pF~82pF J B

1,5nF~10nF K F100pF~470pF J B,D,F

1206

100V0,5pF~4,9pF C D 100pF~220pF J,K F

5,0 pF~9,9pF D D 270pF~470nF K F10pF~3,3nF J D

200V0,5pF~4,9pF C D 100pF~220pF J,K F5,0 pF~9,9pF D D 270pF~100nF K F

10pF~1nF J D

250V

0,5pF~4,9pF C D 100pF~220pF J,K F

5,0 pF~9,9pF D D 270pF~100nF K F

10pF~1nF J D

500V0,5pF~4,9pF C D 100pF~220pF J,K F5,0 pF~9,9pF D D 270pF ~22nF K F10pF~470pF J D

630V0,5pF~4,9pF C D 100pF~220pF J,K F5,0 pF~9,9pF D D 270pF ~22nF K F10pF~270pF J D

1000V

0,5pF~4,9pF C D 100pF~150pF J,K F

5,0 pF~9,9pF D D 180pF~10nF K F

10pF~20pF J D100pF~150pF J D,E

2000V

0,5pF~4,9pF C D 100pF J,K F5,0 pF~9,9pF D D 120pF~1nF K F10pF~20pF J D22pF~120pF J D,E,F



SizeCode

RateVoltage

/UR

Rate Capacitance

C0G X7R

CapacitanceTolera

nce

ChipThick-ness

CapacitanceTolera

nce

ChipThick-ness

1210

100V / / /

220pF~100nF K,M F150nF~220nF K, M H330nF~470nF K,M G680nF~1uF K,M H

200V100pF~4,7nF J D

220pF~100nF K,M F150nF K,M H

/ / / 220nF K,M G

250V100pF~4,7nF J D

220pF~100nF K,M F150nF K,M H

/ / / 220nF K,M G

500V100pF~2,2nF J D 220pF~15nF K,M F

2,7nF J F 22nF~33nF K,M H/ / / 47nF K,M G

1000V100pF~470pF J D

220pF~15nF K,M F560pF~1nF J F

2000V10pF~100pF J D

220pF~2,2nF K,M F120pF~220pF J F

1808

200V / / / 220pF~220nF K,M F250V 100pF~5.6nF J F 220pF~220nF K,M F

500V 100pF~4,7nF J F 220pF~47nF K,M F

1000V 100pF~3,3nF J F 220pF~15nF K,M F2000V 100pF~1nF J F 220pF~1nF K,M F

1812

100V 6,8nF~10nF J F 220pF~470nF K,M F680nF~1uF K,M G,H

200V / / / 220pF~220nF K,M F,H330nF~470nF K,M G

250V 100pF~5,6nF J F220pF~220nF K,M F,H330nF~470nF K,M G

500V 100pF~4.7nF J F220pF~220nF K,M F,H330nF~470nF K,M G

100nF K,M G

630V / / /47nF K,M F100nF K,M G

1000V 100pF~1nF J F 220pF~22nF K,M F,H2000V 100pF~1nF J F 220pF~4,7nF K,M F,H

3000V47pF~100pF J E120pF~220pF J H

2220

250V / / /220pF~47nF K,M H56nF~1µF K,M G

470nF~680nF K,M F,H,G

500V / / /220nF~47nF K,M H56nF~330nF K,M G

630V / / / 47nF K,M F,H

1000V 100pF~18nF J F220pF~47nF K,M H

22nF~47nF K,M F,H56nF~100nF K,M G

2000V / / /220pF~820pF K,M H

1nF~10nF K,M F,H

2225250V / / / 1nF~680nF K,M G

400V / / / 1nF~680nF K,M G



C0G is below 10pF: 0,5pF, 1,0pF, 2,2pF, 3,6pF, 4,7pF, 5,6pF, 6,8pF, 8,2pF to10pFafter 10pF is E12 series,

for size 0402 to 1206 additionally: 20pF, 30pF and 200pF and

above 1nF: E12

X7R 1206 and smaller is E12 series

above 1µF E3 series

1210 and bigger size: E3 series

We can offer also customized specification please contact sales.

Electrical Data

Dielectric NP0 X7R

Size 0603,0805,1206,1210,1812,2220 0603,0805,1206,1210,1812,2220

Rated voltage (VDCW) 200V to 2KV

Q*Cap<30pF: Q≥400 +20C Cap≥30pF: Q≥1000

≤2,5%

Temperature Coefficient 0±30ppm°C ±15%

Insulation resistance at Ur**more than 10GΩ or 500ΩF,whichever is smaller

Dielectric Strength

100V≤Vr<500V, 200%Ur 500V≤Vr<1000V, 150%Ur+100V 1000V≤Vr<2000V, 150%Ur Vr≥2000V, 120%Ur


* Measured at the condition of 40~70% related humidity,15~35°C ambient temperature

NP0/COG: Apply 1,0±0,2Vrms, 1,0 MHz±10% for Cap≦1000pF and 1,0±0,2Vrms, 1,0kHz±10% for Cap>1000pF.

X7R: Apply 1,0±0,2Vrms, 1,0 kHz±10% Cap≦10uF and 120± 24Hz Cap>10uF



Typical Characteristics Curves of High voltage big size C0G parts



Typical Characteristics Curves of High voltage big size X7R parts



Special PartsHigh Q and Low ESR Capacitor

Rated Voltage, Rated Capacitance and available Tolerances

SizeCode

RateVoltag

e/UR

Rate Capacitance

C0G

Capacitance Tolerance Chip Thickness

0402 50V

0,2pF~4,9pF B,C A

5,0pF~9,9pF D A

10pF~18pF F,G,J A

0603

50V

0,2pF~4,9pF B,C C

5,0pF~9,9pF D C

10pF~100pF F,G,J C

100V

0,2pF~4,9pF B,C C

5,0pF~9,9pF D C

10pF~100pF F,G,J C

0805

50V

0,2pF~4,9pF B,C B

5,0pF~9,9pF D B

10pF~100pF F,G,J B

100V

0,2pF~4,9pF B,C B

5,0pF~9,9pF D B

10pF~100pF F,G,J B

Below 10pF: 0,2pF, 0,5pF, 1,0pF, 2,2pF, 3,6pF, … 8,2pF 10pF, higher than 10pF: E-12series and 20pF and 30pF.

Comparing with popular C0G capacitor, HQ C0G capacitor take on higher Q-value and lowerESR, are ideally suited for RF and microwave application requiring high Q, low ESR, andhigh resonant frequency.

We can offer also customized specification.



Electrical Data

12

0402 high frequency and high Q-Value MLCC.

(Q Factor) (ESR)

(Capacitance) (IR)

Dielectric NP0

Size 0402,0603,0805

Rated voltage (VDCW) 50V to 100V

Q*Cp≥30pF: Q≥1400 Cp<30pF: Q ＋≥800 20C

Operating Temperature -55°C to 125°C

Insulation resistance at Ur** ≥10GΩ

Dielectric Strength ≥3×VDCW

ESR

0,1pF ：≤C≤1pF below 350mΩ 1pF＜：C≤5pF below 300mΩ 5pF＜C≤10pF: below 250mΩ 10pF＜C≤100pF below 400mΩ




0603 high frequency and high Q-Value MLCC.

(Q Factor) (ESR)

(Capacitance) (IR)

0805 high frequency and high Q-Value MLCC.(Q Factor) (ESR)

(Capacitance) (IR)



Type of DielectricsType of Dielectrics Operating Temperature Range Temperature Coefficient or Characteristic

NP0 (C0G) -55°C~+125℃ C0G: 0±30ppm/°C

X7R -55°C~+125℃ ±15%

X5R -55°C ~+85°C ±15%

Y5V -30°C ~+85°C +22/-82%

Dimensions

Chip Size： 0402, 0603, 0805, 1206, 1210, 1808, 1812 and 2220

Size L(mm)

W(mm)

e(mm)

g min(mm)

T(mm)

0402 1,0±0,05 0,5±0,05 0,15~0,3 0,4

Refer to chipthickness page 2

0603 1,6±0,1 0,8±0,1 0,2~0,5 0,5

0805 2,0±0,1 1,25±0,1 0,2~0,7 0,7

1206 3,2±0,1 1,60±0,1 0,3~0,8 1,6

1210 3,2±0,3 2,5±0,2 0,3~0,8 1,6

1808 4,5±0,3 2,0±0,2 0,3~1,5 2,5

1812 4,5±0,3 3,2±0,3 0,3~1,5 2,5

2220 5,7±0,4 6,4±0,4 0,3~1,1 3,5

2225 5,7±0,4 6,4±0,4 0,3~1,1 3,5

W

T

e g e

L



Dimensions of Carrier Tape:

D0

Paper CarrierSize A B W F E P1 P2 P0 D T1

0402 0,65±0,10 1,15±0,10 8,0±0,3 3,50±0,05 1,75±0,1 2,0±0,05 2,0±0,05 4,0±0,1 1,5+0,1-0,1 0,8max

0603 1,05±0,10 1,85±0,10 8,0±0,3 3,50±0,05 1,75±0,1 4,0±0,10 2,0±0,10 4,0±0,1 1,5+0,1-0,1 1,1max

0805 1,55±0,15 2,3±0,15 8,0±0,3 3,50±0,05 1,75±0,1 4,0±0,10 2,0±0,10 4,0±0,1 1,5+0,1-0,1 1,1max

1206 1,95±0,15 3,5±0,15 8,0±0,3 3,50±0,05 1,75±0,1 4,0±0,10 2,0±0,10 4,0±0,1 1,5+0,1-0,1 1,1max

in mmEmbossed Carrier

Size A B W F E P1 P2 P0 D T1 T2

0805 1,45±0,20 2,25±0,20 8,0 ±0,3 3,50±0,05 1,75 ±0,1 4,0±0,10 2,0±0,05 4,0 ±0,1 1,5+0,1-0,1 2,5max 0,2 ±0,1

1206 1,95±0,20 3,50±0,20 8,0 ±0,3 3,50±0,05 1,75 ±0,1 4,0±0,10 2,0±0,05 4,0 ±0,1 1,5+0,1-0,1 2,5max 0,2 ±0,1

1210 2,90±0,20 3,60±0,20 8,0 ±0,3 3,50±0,05 1,75 ±0,1 4,0±0,10 2,0±0,05 4,0 ±0,1 1,5+0,1-0,1 2,5max 0,2 ±0,1

1808 2,50±0,20 4,90±0,20 12,0 ±0,3 5,60±0,05 1,75 ±0,1 8,0±0,10 2,0±0,05 4,0 ±0,1 1,5+0,1-0,1 3,8max 0,3 ±0,1

1812 3,60±0,20 4,90±0,20 12,0 ±0,3 5,60±0,05 1,75 ±0,1 8,0±0,10 2,0±0,05 4,0 ±0,1 1,5+0,1-0,1 3,8max 0,3 ±0,1

2220 5,40±0,20 6,10±0,20 12,0 ±0,3 5,60±0,05 1,75 ±0,1 8,0±0,10 2,0±0,05 4,0 ±0,1 1,5+0,1-0,1 3,8max 0,3 ±0,1

2225 6,10±0,20 6,80±0,20 12,0 ±0,3 5,60±0,05 1,75 ±0,1 8,0±0,10 2,0±0,05 4,0 ±0,1 1,5+0,1-0,1 3,8max 0,3 ±0,1

P1 A

D

BW

E

F

P2

P0



Dimensions of Reel:

Reel Size C W A B

0402 to 1206 13,0±1,0 10±1,5 178±2,0 50±1,0

1210 to 2225 13,0±1,0 13±1,5 178±2,0 60±1,0

Unit (mm)

Storage:Period of Store:

C0G two years and X7R/X5R/Y5V one year and conditions for all: 5~40°C, Humidity:≤70% RH, without peeling off the reel tape.

Condition of Store:Keep the storage environment conditions as following:Temperature: 5~40°C

Humidity: ≤70% RH Cautions:- Parts should be used within 3 months after peeling the tape.- The capacitance value of high dielectric constant capacitors (X7R/X5R) will gradually

decrease with time passing, so it should be taken this point into consideration while incircuit design. If such problem occurs, a heat treatment of 150°C for 1 hour will returnthe capacitance to its initial level.

- Period of store on NP0/C0G part can last for two years while with better storecondition(Temperature: 5~40°C ,Humidity: ≤70% RH, without peeling off the reel tape), but X7R/X5R parts should take a heat treatment of 150°C for 1 hour before using if thestore period last for 2 years.

Cover Tape Peel off StrengthSpecifications: 0402 - 2220: 0,1~0,6N



Electrical Parameters:

Specifications and Test Methods of MLCC Electrical Parameter

Test Method Dielectrics Specification Testing Condition

Appearance

(According todifferent

Specifications)

C0G/X7R/X5R/Y5V

No defects or abnormalities Visual inspection.

Dimensions

(EIA-198Method 595)

C0G/X7R/X5R/Y5V

Within the specified dimensions Using calipers on micrometer

Capacitance

(EIA-198

Method 101)

C0GWithin the specified tolerance

B:±0,1pF; C:±0,25pF; D:±0,5pF;J: ±5%

1,0±0,2Vrms, 1MHz±10%

(C>1000 pF, 1,0±0,2Vrms, 1KHz±10%,) 25°C

X7R/X5R

Within the specified tolerance

J: ±5%； K: ±10%； M: ±20%

1.0±0,2Vrms, 1KHz±10%

（ Cp＞10uF,0,5±0,1Vrms,120±24Hz）

at 25°C, 48hrs after annealing

Y5V

Within the specified tolerance

M: ±20%; Z: -20%, +80%

1,0±0,2Vrms, 1KHz±10%

（ Cp＞10uF, 0,5±0,1Vrms,120±24Hz）

at 25°C, 48hrs after annealing

Dissipation Factor(EIA-198

Method 101&102)

C0GCp<30pF, Q≥400+20Cp; Cp≥30pF, Q≥1000

1,0±0,2Vrms, 1MHz±10%, 25°C(Cp>1000pF, 1,0±0,2Vrms,1KHz±10%)

X7R

UR≥100V，DF≤2,5%

25V≤UR≤50V, DF≤3,5%

DF≤5,0% (0402≥0,033μF,

0603≥0,15μF,0805≥0,68μF,

1206≥2,2μF, 1210≥6,8μF)

UR≤16V, DF≤5,0%

DF≤7,0% (0402≥0,056μF,

0603≥0,56μF,0805≥1μF, 1206≥4,7μF,

1210≥10μF)

UR =6,3V, DF≤7,0%

DF≤10,0% (0402≥0,33μF,

0603≥1μF,0805≥10μF, 1206≥22μF,

1210≥47μF)

1,0±0,2Vrms, 1KHz±10%,(Cp＞10uF 0,005±0,1Vrms,120±24Hz)at 25°C,48hrs after annealing

X5R

UR≥25V, DF ≤5,0%

UR=16V, DF≤6,0%

UR≤10V, DF ≤7,0%

Y5V

UR≥50V, DF≤7,0%

UR=25V, DF≤7,0% (0402≥0,047μF,

0603≥0,1μF,

0805≥0,33μF,1206≥0,68μF,

1210≥1μF)

DF ≤9,0% (0402≥0,068μF,

0603≥0,47μF,0805≥1μF, 1206≥4,7μF,

1210≥10μF)

UR=16V, DF ≤9,0%

UR=10V, DF ≤12,5%

UR=6,3V, DF ≤15,0%

1,0±0,2Vrms, 1KHz±10%,(Cp＞10uF, 0,5±0,1Vrms,120±24Hz)at 25°C,48hrs after annealing



Test Method Dielectrics Specification Testing ConditionInsulation

Resistance(EIA-198

Method 104)

C0G/X7R/X5R/Y5V

More than 10 GΩ or 500Ω·F, whichever is smaller.

UR≤400V U=UR ；UR＞400V U=400V；Charge Time: 60±5secTemperature: 25°C

Dielectric

Strength

(EIA-198

Method 103)

Standard Part

Withstanding

Voltage

C0G/X7R/X5

R/Y5V

No defects or abnormalities. Failure shall be observed when 300% (C0G);

250%(X7R/ X5R/Y5V)of the rated voltage is

applied between the terminations for 1 to 5

seconds, provided the charge /discharge

current is less than 50mA

DielectricStrength(EIA-198

Method 103)High Voltage Part

WithstandingVoltage

C0G/X7R/X5R/Y5V

100V≤Vr＜500V Applying 200% Rated voltage for 5second.Max..current should not exceed 50 mA.

500V≤Vr＜1000V Applying 150%+100V Rated voltage for5second. Max..current should not exceed 50mA.

1000V≤Vr＜2000V Applying 150%Rated voltage for 5second.Max..current should not exceed 50 mA.

Vr≥2000V Applying 120%Rated voltage for 5second. Max..current should not exceed 1 mA.

TemperatureCoefficient ofCapacitance

(EIA-198Method 105)

C0G

Temperature coefficient within±30ppm/°C

Cp drift within ±0,2% or ±0,05pF

Measure capacitance under follow table list

temperature:

Ste

p

C0G, X7R X5R Y5V

1 25 ±2 25 ±2 25 ±2

2 -55±3 -55±3 -30±3

X7R/X5R

Capacitance change within ±15% 3

4

5

25 ±2

125±3

25 ±2

25 ±2

85±3

25 ±2

25 ±2

85±3

25 ±2

Y5V

Capacitance change within +22%, -

82%

1) C0GThe capacitance drift is calculated by dividingthe differences between the maximum andminimum measured values in the step 1,3 and5.The temperature coefficient is determinedusing the Capacitance measured in step 3 as areference.

2) X7R ,X5R and Y5V

The ranges of capacitance change compared

within the above 25°C value over the

temperature ranges shall be within the

specified ranges.




Adhesion

C0G

X7R/X5R

Y5V

No removal of the terminations or otherdefect shall occur.

The pressurizing force shall be 6N (=600g*f)

and the duration of application shall be 10

±1sec.

hip

cross-section

board

hooked jig

r=0.5

Solderability(EIA-198

Method 301)

C0GX7R/X5R

Y5V

95% min. coverage of both terminal

electrodes and less than 5% have pin

holes or rough spots.

Solder temperature: 245±5°CDipping time: 2±1 seconds.

Completely soak both terminal electrodes in

solder

Leach(EIA-198

Method 307)

C0GX7R/X5R

Y5V

95% min. coverage of both terminal

electrodes and less than 5% have pin

holes or rough spots.

No remarkable visual damage.

Solder temperature: 270±5°CDipping time: 10±1 seconds.

Completely soak both terminal electrodes in

solder

Deflection(EIA-198

Method 303)

C0GNo remarkable visual damage

Cp change ≤ ±5% or ≤ 0,5 pF

Solder the capacitor on testing substrate andput it on testing stand. The middle part ofsubstrate shall successively be pressurized bypressuring rod at a rated of about 1,0mm/sec.Until the deflection become means of the1,0mm.

X7R/X5RNo remarkable visual damage

Cp change ≤ ±12,5%

Y5V

No remarkable visual damage

Cp change ≤ ±30%

capacitance meter

50 pressurizingspeeding:1.0mm/sec.pressurize




Resistance to

Soldering Heat

(EIA-198

Method 302)

C0G

No remarkable visual damageCp change within ±2,5% or ±0,25pF,whichever is larger.DF meets initial standard value.

IR meets initial standard value.

Soldering temperature: 270±5°C

Preheating: 120~150°C 60sec.

Dipping time: 10±1 seconds.

Measurement to be made after being kept at

room temperature for 24±2 (C0G) or 48±4(X7R

,X5R, Y5V) hours.

Recovery for the following period under the

standard condition after test.

*Initial measurement for high dielectric

constant type

Perform a heat treatment at 140~150°C for 1hr

and let sit for 48±4hrs at room temperature.

Perform the initial measurement.

X7R/X5R

No remarkable visual damageCp change within ±7,5%DF meets initial standard value.IR meets initial standard value.

Y5V

No remarkable visual damageCp change within ±20%DF meets initial standard value.

IR meets initial standard value.

Temperature

Cycle

C0G

No remarkable visual damageCp change within ±2,5% or ±0,25pF,whichever is larger.

To perform 5 cycles of the stated environment

Step Temperature Time

1 Min. operatingTemp.+0/-3°C

30min

2 25°C 2~3 min

3 Max. operatingTemp.+0/-3°C

30 min

X7R/X5R

No remarkable visual damageCp change within ±7,5%

4 25°C 2~3 min

Measurement to be made after being kept atroom temperature for 24±2hrs (C0G) or48±4hrs (X7R, X5R, Y5V) at roomtemperature, then measure.*Initial measurement for high dielectricconstant typePerform a heat treatment at 140~150°C for 1hrand let sit for 48±4hrs at room temperature.


MoistureResistance,steady state

(EIA-198Method 206)

C0G

No remarkable visual damageCp change within ±5% or ±0,5pF,whichever is larger.Cp<10pF, Q≥200+10Cp; 10≤Cp<30pF, Q≥275+2,5Cp Cp≥30pF, Q≥350

R*C≥1000MΩ or 50Ω·F, whichever is

smaller

Test temperature: 40±2°CHumidity: 90~95% RHTesting time: 500 ±12hrs

Measurement to be made after being kept atroom temperature for 24±2hrs (C0G) or48±4hrs (X7R, X5R, Y5V)

*Initial measurement for high dielectricconstant typePerform a heat treatment at 140~150°C for 1hrand let sit for 48±4hrs at room temperature.


X7R/X5R

Cp change within ±12,5%DF: Not more than 2 times of initialvalue


smaller

Y5V

No remarkable visual damageCp change within ±30%

DF:Not more than 1,5 times of initial

value


smaller




Damp heat withload

(MIL-STD-55681PARA. 4.8.15)

C0G


Cp change≤±7,5% or ±0,75pF,

whichever is larger.

Cp<30pF, Q≥100+10/3*Cp

Cp≥30pF, Q≥200


smaller

Test temperature: 40±2°CHumidity: 90~95% RHVoltage: 100% of the rated voltageTesting time: 500 ±12hrs

Measurement to be made after being kept atroom temperature for 24±2hrs (C0G) or48±4hrs (X7R, X5R, Y5V)

*Apply the rated DC voltage for 1 hour at40±2°C.Remove and let sit for 48±4hrs at roomtemperature.


X7R/X5R


Cp change≤±12,5%

DF:Not more than 2 times of initial

value R*C≥500MΩ or 25Ω·F,

whichever is smaller

Y5V


Cp change≤±30%


value


smaller

Life Test(EIA-198

Method 201)

C0G


Cp change≤±3% or ±0,3pF, whichever

is larger.

Q≥350 (Cp≥30 PF)

Q≥275+(2,5* Cp) (10 pF≤Cp<30 PF)

Q≥200+10*Cp (Cp<10 PF)

R*C≥1000MΩ or 50Ω·F, whichever is smaller

Test temperature:Max. Operating Temp. ±3°C

Voltage:UR＜100V 200% of the rated voltage

100V≤UR＜500V 150% of the rated voltage500V≤UR＜1000V 120% of the rated voltage1000V≤UR 100% of the rated voltageTesting time: 1000 hrs

Measurement to be made after being kept atroom temperature for 24±2hrs (C0G) or48±4hrs (X7R, X5R,Y5V)

*Initial measurement for high dielectricconstant typeApply 200% of the rated DC voltage for onehour at the maximum operating temperature±3°C.Remove and let sit for 48±4hrs at roomtemperature.Perform the initial measurement

X7R/X5R


Cp change≤±12,5%

DF:Not more than 2 times of initialvalueR*C≥1000MΩ or 50Ω·F, whichever is smaller

Y5V


Cp change≤±30%


valueR*C≥1000MΩ or 50Ω·F, whichever is smaller



Recommended Pb-Free soldering profile

Reflow soldering

Wave solder profile

Hand soldering

Caution

1. Use a 20w soldering iron with a maximum tip diameter of 1,0mm.

2. The soldering iron should not directly touch the capacitor.



Construction

Recommended Land Pattern Design:

Recommended land dimensions for wave-soldering (unit: mm)

SIZE 0603 0805 1206 1210 1812 2220 2225

A 0,8~1,0 1,0~1,4 1,8~2,5 1,8~2,5 1,8~2,5 2,5~3,4 4,0~4,6

B 0,5~0,8 0,8~1,5 0,8~1,7 0,8~1,7 0,8~1,7 1,8~2,0 2,0~2,2

C 0,6~0,8 0,9~1,2 1,2~1,6 1,8~2,5 1,2~1,6 2,3~3,5 5,0~6,2

Recommended land dimensions for reflow-soldering (unit: mm)

SIZE 0402 0603 0805 1206 1210 1812 2220 2225

A 0,35~0,45 0,6~0,8 0,8~1,2 1,8~2,5 1,8~2,5 2,5~3,4 4,0~4,6 4,0~4,6

B 0,40~0,50 0,6~0,8 0,8~1,2 1,0~1,5 1,0~1,5 1,8~2,0 2,0~2,2 2,0~2,2

C 0,45~0,55 0,60~0,8 0,9~1,6 1,2~2,0 1,6~3,2 2,3~3,5 3,5~4,8 3,5~4,8



Examples of good and bad solder applicationThe most preferred size is E, then D, but sizes of C, B, A are not good.

slit

magnitude of stress A>B=C>D>E

perforation

**When breaking PC boards along their perforations, the amount if mechanical stress on

the capacitors can vary according to the method used. The following methods are listed in

order from least stressful to most stressful: push-back, silt, -grooving, and perforation.

Thus, any ideal SMD capacitor layout must also consider the PCB splitting procedure.

The good solder should be:a) The chip should be far away from the split line edge, to minimize the mechanical stress

from bending or twisting to the board;b) The chip should be soldered parallel to the split line edge, so as to avoid the magnitude

stressc) Board splitting should not be done manually, but by using the appropriate devices.

Otherwise, chip will be easily cracked by mechanical stress and magnitude stress.

Considerations for automatic placement

Adjustment of mounting machine

1. Excessive impact load should not be imposed on the capacitors when mounting the PC

boards.

2. The maintenance and inspection of the mounters should be conducted periodically.

Not recommended Recommended

Single-sidedmounting

crack

supporting pin

Double-sidedmounting

crack

solder peeling cracksupporting pin



C0G： The capacitor with COG dielectric material is considered as Class I capacitor,including popular capacitor and high frequency C0G capacitor. The electrical properties ofC0G capacitor are the most stable one and have little change with temperature, voltage andtime. They are suited for applications where low-losses and high-stability are required, suchas filters, oscillators, and timing circuits.X7R, X5R：The capacitor with X7R and X5R dielectric material have high dielectricconstant. They are considered as Class II capacitor which capacitance is higher than classI capacitor. These capacitors are classified as having a semi-stable temperaturecharacteristic and used over a wide temperature range, such in these kinds of circuits, DC-blocking, decoupling, bypassing, frequency discriminating etc.Y5V：The capacitor made of Y5Vmaterial is the highest dielectric constant of all ceramiccapacitors. They are used over a moderate temperature range in application where highcapacitance is required because of its unstable temperature coefficient, but where moderatelosses and capacitance changes can be tolerated. Its capacitance and dissipation factorsare sensible to measuring conditions, such as temperature and voltage, etc



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2016 FrelTec® GmbH. All Rights Reserved.

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Documents

073 MLCC SMD NP0 X7R X5R Y5V - FrelTec · PDF fileFrelTec Capacitor SMD MLCC 6/12/2016 2/36 © FrelTec® GmbH Please read cautions and warnings and important notes at the end of this