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doc.: IEEE 802.15-<15-06-0152-00-003c>
Project: IEEE P802.15 Working Group for Wireless Personal Area Networks (WPANs)Project: IEEE P802.15 Working Group for Wireless Personal Area Networks (WPANs)
Submission Title: [Metal-Insulator Electronics for 60 GHz and Beyond]Date Submitted: [7 March, 2006]Source: [Moddel, Garret] Company [Phiar Corp.]Address [2555 55th St., Bldg. D #104, Boulder CO, 80301]Voice:[(303) 443-0373], FAX: [], E-Mail:[[email protected]]
Re: []
Abstract: [Metal-insulator devices have been developed for 60 GHz and beyond. The devices can be integrated into a CMOS process, and provide a low-cost, integratable technology for wireless applications]
Purpose: [Making the TG3c group aware of a non-semiconductor approach to mm-wave PHYs.]
Notice: This document has been prepared to assist the IEEE P802.15. It is offered as a basis for discussion and is not binding on the contributing individual(s) or organization(s). The material in this document is subject to change in form and content after further study. The contributor(s) reserve(s) the right to add, amend or withdraw material contained herein.Release: The contributor acknowledges and accepts that this contribution becomes the property of IEEE and may be made publicly available by P802.15.
2
doc.: IEEE 802.15-<15-06-0152-00-003c>
Metal-Insulator Electronics:Metal-Insulator Electronics:Low Cost, CMOS-Compatible Devices Low Cost, CMOS-Compatible Devices
for 60 GHz and Beyond for 60 GHz and Beyond
IEEE 802.15.TG3c 6th Meeting – March 7, 2006
Garret ModdelChairman & CTO, Phiar Corp.Professor, University of Colorado
3
doc.: IEEE 802.15-<15-06-0152-00-003c>
Metal-Insulator Diode Detector
load
MIM diode
antenna
incident radiation
top metal
base metal
insulator
Top View
a “crystal radio” for ultra-high frequency electromagnetic waves
Side View
4
doc.: IEEE 802.15-<15-06-0152-00-003c>
Outline
• Metal-insulator technology– Diodes– Double-insulator diode– Detectors & modulators– Transistors
• Applications
5
doc.: IEEE 802.15-<15-06-0152-00-003c>
Metal-Insulator-Metal Diode Rectification
9.8
10.3
10.8
11.3
11.8
12.3
12.8
-20 0 20 40Distance ( Å )
Energ
y (
eV
)
Bias Voltage
Metal 1
Metal 2
Electron Tunneling
Insulator
• Carrier signal alternates polarity across diode
• Electrons tunnel preferentially in one direction due to difference in metal barrier heights
• Tunneling is extremely fast (~1 femtosecond) – allows for ultra-high carrier frequencies (> 1 terahertz)
6
doc.: IEEE 802.15-<15-06-0152-00-003c>
Current-Voltage Curves
Nonlinearity(curvature)
Slope determines resistance
Cur
rent
Voltage
Matching antenna
• Diode resistance should match antenna resistance - which is usually low
Sensitivity
• Detector responsivity (sensitivity) increases with nonlinearity
Double-insulator diode
• Large slope - matches antenna
• Large nonlinearity - high responsivity
Large nonlinearity
Large slope (low resistance)
Cur
rent
Voltage
MIM diode
MI-IM diode
7
doc.: IEEE 802.15-<15-06-0152-00-003c>
Double-Insulator Tunneling Diode
cathode anode
M1 M2I1 I2
Zero bias:
e-
cathode anode
Forward bias:
cathode anode
e-
Reverse bias:
Electron Transmission
Ene
rgy
(eV
)
910
11
12
13
14
15
10010-30
Quantumwells
• When Fermi level reaches quantum
well, electrons get a “free ride”
• Result: sharp turn-on
8
doc.: IEEE 802.15-<15-06-0152-00-003c>
Measured Diode I(V) Curves
• Reproducible
• Steep slope
• Sharp “knee”
• Low OFF current
Image Credit: Phiar. Contact pad design: Motorola.
9
doc.: IEEE 802.15-<15-06-0152-00-003c>
• Diode + antenna
Detectors & Modulators
Metal 1
Metal 2
Insulator 2
Insulator 1
Top Contact
BottomContact
ProtectiveInsulator
10
doc.: IEEE 802.15-<15-06-0152-00-003c>
200 GHz Testing
200 GHz Mixing Response*
• Removes effects from other physical mechanisms
• Results assure device truly operating at 200 GHz
* Testing performed at Harvard Smithsonian
-145
-135
-125
-115
-105
-95
-85
-75
-0.25 -0.15 -0.05 0.05 0.15 0.25
bias (V)
dB
m
measureddelta-f outputtheoreticaldelta-f output
11
doc.: IEEE 802.15-<15-06-0152-00-003c>
1 THz Testing
Signal Time SeriesDevice 1007-1-32
-1.0E-02
0.0E+00
1.0E-02
2.0E-02
3.0E-02
4.0E-02
5.0E-02
6.0E-02
-2.E-07 -1.E-07 0.E+00 1.E-07 2.E-07 3.E-07 4.E-07 5.E-07
Time (s)
Sig
nal
Vo
ltag
e (V
)
THz detector1 THz Pulsed Laser Response*
* Testing performed at UCSB
12
doc.: IEEE 802.15-<15-06-0152-00-003c>
Diode: Why It’s So Fast
• Short carrier transit time – because quantum mechanical tunneling
• Low lead parasitic resistance – because all metal & no semiconductor bulk to add high resistance
• Low RC time constanto Low capacitance (C) due to small diode areao Low resistance (R) due to
Double insulator large nonlinearityChoice of materials to produce low barrier
• Note: low resistance also improves impedance match of diode to antenna – improves efficiency
13
doc.: IEEE 802.15-<15-06-0152-00-003c>Antenna Innovation: Edge-Fed Antenna for Ultra-high Frequencies
200 GHz 20 GHz
• Separates carrier and signal frequencies
• Improves antenna efficiency
• Improves matching to diode
• Color code for this simulation: Blue = low poweryellow/green = high power
200 GHz carrier is received by antenna and channeled to diode region, where it is rectified
20 GHz rectified signal is channeled out the leads
14
doc.: IEEE 802.15-<15-06-0152-00-003c>
Traveling Wave Detector
overlap
MIIM waveguide
Vbias
antenna
top metal
bottom metal
tunneljunction plasmon wave
zy
x
Improves:• Efficiency• Impedance matching to antenna• RC time constant
Ex
Ey
Ez
15
doc.: IEEE 802.15-<15-06-0152-00-003c>
Comparison: THz Detectors
• Fast useful for heterodyne & direct detection• Sensitive high responsivity & low noise • Integratable thin film deposited at low temp on virtually
any substrate (plastic, glass, CMOS, GaAs, etc.)
Zero-Bias MIIM Diode
(simulated)
GaAs Schottky Diode
III-Sb Backward Tunnel Diode
Microbolometer
Bias Zero Positive Zero Positive
Responsivity
8-10 A/W 8 A/W 1-2 A/W 1-10 A/W
NEP ~110-12
W/Hz1/2 110-11 W/Hz1/2 N/A>110-12
W/Hz1/2
Bandwidth ~10 THz 25 THz 720 GHz < 1 MHz
16
doc.: IEEE 802.15-<15-06-0152-00-003c>Antenna Transmission & Reflection: Towards Modulation
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
0 1000 2000 3000 4000
Diode Resistance ( ohms )
Reflect
ed
& A
bso
rbed
Pow
er
Zdiode = Zo
reflected power
2
oLOAD
oLOAD
ZZZZ
R
0
0
0
0
0
-1.0 -0.5 0.0 0.5 1.0
Bias Voltage ( V )
Old MIM Technology
(divided by 10 6 )
New MIIM Technology
2
-1
3
1
Dark
Cu
rren
t (
mA
/cm
2 )
absorbed power
17
doc.: IEEE 802.15-<15-06-0152-00-003c>
Modulator Demonstration
0.0E+00
5.0E-06
1.0E-05
1.5E-05
2.0E-05
2.5E-05
3.0E-05
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Modulation Voltage (V)
Mo
du
lati
on
Sig
nal
(V
)
Signal
Noise
Phiar Modulator10 kHz modulation
18
doc.: IEEE 802.15-<15-06-0152-00-003c>
Metal-Insulator Tunneling Transistor
E
C
Bdouble-I emitter oxides
base metal
collector oxide
low substrate
narrow emitter stripe
19
doc.: IEEE 802.15-<15-06-0152-00-003c>
MIIMIM Tunneling Hot Electron Transistor
hot electron
emitter base collector
Cutoff freq, fT 1.8 THz
Max osc freq, fmax 3.8 THz
Unilateral pwr gain 20 dB
RF output pwr ~1 mW
Power efficiency > 30%
Predicted Performance
~ 10 nm
~ 10 nm
~ 6 nm
emitter metal
base metal
collector metal
collector insulator
emitter insulator (double-I)
20
doc.: IEEE 802.15-<15-06-0152-00-003c>
Energy Spread of Injected Electrons
Solution: MIIM emitter(chart at left)• Narrower hot electron
distribution• Lower energy hot electron
distribution
MIMIM
MIIMIM
J(E)
J(E)
0.0
0.2
0.4
0.0
0.2
En
erg
y (e
V)
0 4 8 12 16 20 Distance (nm)
hot electron current distribution
EF
EF
Problem: Energy spread reduces gain
• Low energy electrons clipped by barrier
• High energy electrons scatter
21
doc.: IEEE 802.15-<15-06-0152-00-003c>
275
300
400
3 THz
410
0 500 1000 1500 2000 2500 3000
GaN HEMTGaAs PHEMTGaAs MHEMT
InP HEMTInP HBT
SiGe HBTPhiar
Exceeding Other Transistor Technologies
Source: The International Technology Roadmap for Semiconductors: 2005; Phiar projections.
Maximum transistor frequencies: fmax (GHz)
Yellow: frequencies where engineering challenges remain
Technologies projected to hit “Brick Wall” by 2010 – further progress not expected.
150
250
22
doc.: IEEE 802.15-<15-06-0152-00-003c>Transistor: Why It’s So Fast
basecollector
emitter
low substrate
emitter oxides
base metal
collector oxide
Advantages over semiconductor transistors: • Transit time• Base & lead resistance• Integratable, etc.
Advantages over semiconductor transistors: • Transit time• Base & lead resistance• Integratable, etc.
23
doc.: IEEE 802.15-<15-06-0152-00-003c>The Basic Building Block: Metal-Insulator High-Frequency Transceiver
• Stand-alone device
or• Integrated onto chip
- - -• Wireline
or• Wireless
Thin film metal-insulatortransmitter and receiver
High speed semiconductor signal conditioning circuitry
Metal-insulator detectors have beendemonstrated on CMOS chips
24
doc.: IEEE 802.15-<15-06-0152-00-003c>Features of Metal-Insulator Technology
• Ultra-high-speed up to THz diodes & transistors• Thin film low-cost, large-area, integratable on
CMOS, plastic, etc.• No exotic materials or processes compatible with
CMOS fab• High efficiency practical• Low voltage compatible with CMOS• Low cost• One technology does it all: diodes, transistors,
antennas, arrays…
25
doc.: IEEE 802.15-<15-06-0152-00-003c>
Outline
• Metal-insulator technology– Diodes– Double-insulator diode– Detectors & modulators– Transistors
• Applications
26
doc.: IEEE 802.15-<15-06-0152-00-003c>Personal Area Networks: the 10 meter opportunity
27
doc.: IEEE 802.15-<15-06-0152-00-003c>Intra-box: the 10 cm opportunity
• Removes slow copper
• Provides design flexibility
GPU
CPU
28
doc.: IEEE 802.15-<15-06-0152-00-003c>
30 Years of Bandwidth
Source: IEEE Spectrum, “Edholm’s Law of Bandwidth: Telecommunications data rates are as predictable as Moore’s Law,” July 2004.
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
1976 1981 1986 1991 1996 2001 2006
Lo
g (
Bit
s p
er S
eco
nd
)
Wireless
10 Mb/s Etherne
t
9600 b/s Modem
1 Gb/s Etherne
t
802.11b
802.11g
GSM
MIMO
Wireline
“Nomadic”
29
doc.: IEEE 802.15-<15-06-0152-00-003c>
7.0
8.0
9.0
10.0
11.0
12.0
2005 2006 2007 2008 2009 2010
Lo
g (
Bit
s p
er
Se
co
nd
)Beyond Copper
Source: IEEE Spectrum, “Edholm’s Law of Bandwidth,” July 2004; Phiar estimates.
WirelineUWB at 0.48
& 1.2 Gb/s
“Pre-N” 802.11
Nomadic
Cellular
MIIM Technolog
y
MIIM Technolog
y
30
doc.: IEEE 802.15-<15-06-0152-00-003c>
RF-on-Flex Applications
• Low-cost radar (e.g., automotive)• Lightweight satellite uplinks/downlinks• Free-space data links, communications• RF ID tags and smart tags• Completely integrated phased arrays on flex• Very large aperture radar
Metal-insulator diodes have been demonstrated on plastic substrates
31
doc.: IEEE 802.15-<15-06-0152-00-003c>
Terahertz Radiation• T-rays (terahertz radiation) technology: One of “10
Emerging Technologies That Will Change Your World” (MIT Technology Review, Feb ‘04)
• Key to commercial success: low-cost T-ray source• Electromagnetic spectrum between high-frequency radio
waves and far infrared light • 0.1-10 THz range 0.03 - 3 mm wavelength• Non-ionizing, causes negligible damage of materials• Many materials transparent, others exhibit unique
absorption signature• Absorbed by water and humidity
– Absorption length 10 cm – 10 km in air, depending on wavelength and humidity
32
doc.: IEEE 802.15-<15-06-0152-00-003c>
ApplicationsNon-Destructive Testing THz Security Scanning
THz Medical ImagingmmW Automotive
Radar
33
doc.: IEEE 802.15-<15-06-0152-00-003c>
Conclusions
• Metal-insulator diodes & detectors have been demonstrated– To 200 GHz and beyond
– On CMOS integrated circuits
– On plastic substrates
• Double-insulator diodes provide enhanced performance• Metal-insulator modulators & transistors are feasible• Advantages include low cost, integratability, ultra-high
speed, compatible with CMOS fabrication• Near-term applications include 60 GHz wireless links• Longer-term applications include terahertz wireless links,
terahertz imaging, and ultra-high speed electronics
34
doc.: IEEE 802.15-<15-06-0152-00-003c>
Extra Slides
35
doc.: IEEE 802.15-<15-06-0152-00-003c>
Classical or Quantum Description?• Incident radiation
oElectromagnetic waves or oQED photons (quanta)
• Antenna signaloCurrent (classical) or oSurface plasmons (quanta)
• Diode tunnelingoRectification (classical) or oHot electrons (quanta) oroQuantum transitions
36
doc.: IEEE 802.15-<15-06-0152-00-003c>
Features of Transistor
• Ultra-fast metal-insulator nanotechnology transistors • Thin film: compatible with silicon ICs• Manufacturable at low cost
E
C
Bdouble-I emitter oxides
base metal
collector oxide
low substrate
narrow emitter stripe
38
doc.: IEEE 802.15-<15-06-0152-00-003c>
Double Insulator
0
0
0
0
0
-1.0 -0.5 0.0 0.5 1.0
Bias Voltage ( V )
Old MIM Technology
(divided by 106)
New MIIM Technology
2
-1
3
1
Dar
k C
urre
nt
(m
A/c
m2)
0
0
0
0
0
-1.0 -0.5 0.0 0.5 1.0
Bias Voltage ( V )
Old MIM Technology
(divided by 106)
New MIIM Technology
2
-1
3
1
Dar
k C
urre
nt
(m
A/c
m2)
39
doc.: IEEE 802.15-<15-06-0152-00-003c>
Comparison: THz Sources
• Efficient up to 35% or higher DC-to-THz• High power mW output for single device• Integrated solid state, thin film
SourceOperating
TemperatureCost
Phiar MIIMIM oscillator room $1 est.
Quantum Cascade Laser requires cooling
$1,000
est.
Microwave Upconverter low-room $100s – $1000sest.
Femtosecond Laser room $50,000+
Gas Laser room $300,000
40
doc.: IEEE 802.15-<15-06-0152-00-003c>
Emerging Market: Terahertz Imaging
• Security– Bombs in packages: mail packages, luggage – Objects detected through-wall and through-clothes– Chemical and biological materials
• Medical imaging– Oncology: imaging soft tissue for cancer– Dental images
• Pharmaceuticals– Drug dosage testing– Drug discovery
• Manufacturing non-destructive diagnostics– Packaged semiconductors– Plastic and foam materials
• Material composition analysis: food, textiles, asbestos• Gas analysis: pollution monitoring, engine exhaust, astronomy• Defense
– Imaging through obscurants (fog, smoke, etc.)– Chem/bio agent & target detection & identification– Free-space communications: high bandwidth & secure