22
1 New build-up New build-up technique technique with copper bump with copper bump AGP Process

1 New build-up technique with copper bump AGP Process

Embed Size (px)

Citation preview

Page 1: 1 New build-up technique with copper bump AGP Process

1

New build-up techniqueNew build-up techniquewith copper bumpwith copper bump

AGP Process

Page 2: 1 New build-up technique with copper bump AGP Process

2

AGP Build-up PCBAGP Build-up PCB

Page 3: 1 New build-up technique with copper bump AGP Process

AGP Build-upAGP Build-up PCB Section FigurePCB Section Figure Multi-via Structures

Page 4: 1 New build-up technique with copper bump AGP Process

4

Cross sectional view of AGP

Photo. 1+4+1 build-up PWB using AGP

To use copper bump as a connection between layers

Page 5: 1 New build-up technique with copper bump AGP Process

5

Cross sectional view of AGP

Photo. 2+2+2 build-up PWB using AGP

Photo. 3+4+3 build-up PWB using AGP

Copper bump L1 alnd

L2 land

Page 6: 1 New build-up technique with copper bump AGP Process

6

Concepts of developing AGP

1. Possible to reduce land size

2. Possible to stack vias

3. Possible to form bumps of different diameters in a one-step batch process

4. Improvement of reliability of electrical connection

Page 7: 1 New build-up technique with copper bump AGP Process

7

Benefits of AGPBenefits of AGP

1. Possible to reduce diameter of via AGP bump is formed by etching method. It is possible to form micro-bumps with a diameter 50micron.

2. Possible to stack vias easily

AGP enables very flat land surface without via-filling.

It is suitable process for multi-layer build-up structure.

Page 8: 1 New build-up technique with copper bump AGP Process

8

Benefits of AGPBenefits of AGP3. High reliability of connecting Land to via joining is achieved by copper plating. This enables high reliability of electrical connection and high land- pull strength.

4. Possible to form bumps of different diameters By selecting the size of the etching mask, the bump of a different diameter can exist together. Larger bump can be used for the part where high heat conductivity or low electric resistance are necessary.

Page 9: 1 New build-up technique with copper bump AGP Process

9

Benefits of AGPBenefits of AGP

5. Low surface roughness of outer copper

Outer layer is formed by panel-plating. It has sufficient peel strength even if there is no anchor effect. This smooth side contributes to the high frequency characteristic.

Page 10: 1 New build-up technique with copper bump AGP Process

10

Structure that AGP enablesStructure that AGP enables1. Multi build-up structure with stacking via

2. Flip chip pad with micro via connection

High density PWBs can be

achieved by AGP.

It is suitable for MCM.

Page 11: 1 New build-up technique with copper bump AGP Process

11

Structure that AGP enablesStructure that AGP enables

3. Land-less pattern Via and line can be connected directlywithout forming land.It will bring drastic higher wiring density.

Upper view

Because the bump layer is formed by the etching,It is possible to process it to various shape.That enables frame as illustrated, it brings rigidlyImprovement.It is also as possible to build the coaxial cableStructure into.

4. Rigidly improvement by copper frame

3D view

Page 12: 1 New build-up technique with copper bump AGP Process

12

Structure that AGP enablesStructure that AGP enables

5. Heat management by forming thermal via

Improvement of heat dissipation effect

Forming chip size heat sinkBy AGP process Plugged via by using

Conductive paste

BGA/CSP

Page 13: 1 New build-up technique with copper bump AGP Process

13

Schematic illustration of AGP processSchematic illustration of AGP process

Core board

Copper plated on core board

Forming bumps by etching

Forming dielectric layer(Liquid epoxy)

Copper plating as outer layer

Page 14: 1 New build-up technique with copper bump AGP Process

14

AGPAGP Process Process

Inner Layer Pattern

Page 15: 1 New build-up technique with copper bump AGP Process

15

AGPAGP Process Process

Copper Plating

Page 16: 1 New build-up technique with copper bump AGP Process

16

AGPAGP Process Process

Bump Masking

Page 17: 1 New build-up technique with copper bump AGP Process

17

AGPAGP Process Process

Bump Etching

Page 18: 1 New build-up technique with copper bump AGP Process

18

AGPAGP Process Process

Dielectric layer

Page 19: 1 New build-up technique with copper bump AGP Process

19

AGPAGP Process Process

External Layer Pattern

Page 20: 1 New build-up technique with copper bump AGP Process

20

Manufacturing Spec

Minimum land size of outer layer 100m

Minimum size of top of via 50m

Dielectric thickness of AGP layer30~60m

Dielectric consists of epoxy resinNot including glass-cross

Minimum size of bottom of via 75m

Minimum land size of inner layer 150 m

Page 21: 1 New build-up technique with copper bump AGP Process

21

Result of durability testsResult of durability testsTests Conditions Standards Results Judgments

Humidity bias test(Cyclic)

IPC-SM-840CClass T

Insulation resistance 1x108 or morePeel strength of conductive 600g/cm or more

6x1011

1.0kg/cm

OK

OK

Humidity bias test(Steady state)

40℃/90%R.H./50V240hrs

85 ℃/85%R.H./30V100hrs

Insulation resistance 1x108 or more Peel strength of conductive 600g/cm or moreInsulation resistance 1x108 or morePeel strength of conductive 600g/cm or more

2x1011

1.0kg/cm

2x1011

1.0kg/cm

OK

OK

OK

OK

PCT 121 ℃/2atm/100%R.H./96h130℃/2.3atm/85%R.H./5.5V/168h

Insulation resistance1x108 or more

3x1011 OK

Dielectric strength Applying 500V in5sec and keeping1min

No dielectric breakdown 2x1012 OK

Page 22: 1 New build-up technique with copper bump AGP Process

22

Result of durability testsResult of durability tests

Tests Conditions Standards Results Judgments

Thermal shock test(Vapor phase)

-65℃/30min125 ℃/30min1000cycles

Change in resistance10% or less

0.5% OK

Thermal shock test(Hot oil)

260 ℃/5sec20 ℃/15sec 300cycles

Change in resistance10% or less

2.0% OK

Solder bath test 260 ℃/10sec3times

Change in resistance10% or less

1.0% OK

High temperature storage

125 ℃/100hrs

Change in resistance10% or lessInsulation resistance

1x108 or morePeel strength ofConductive 600g/cm or more

0.5%

1x1010

1.0kg/cm

OK

OK

OK