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    Journal of Magnetism and Magnetic Materials 310 (2007) e735e737

    Magnetic behaviour of CoAlN thin films with various Co

    concentrations

    Takanobu Sato, Yasushi Endo, Yu Shiratsuchi, Masahiko Yamamoto

    Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

    Available online 27 November 2006

    Abstract

    We have investigated the magnetic behaviour of CoAlN (Al1xCoxN) thin films with various Co concentrations (x) of 0.060.25. Forall Co concentrations, the hysteresis are not observed in any magnetization curves at the temperatures of 10300K. For the Co

    concentration x below 0.10, the magnetization is almost zero at the temperature above 50 K and increases slightly with decreasing

    temperature below 50 K. In contrasts, for the Co concentrationx above 0.17, the peak temperature in zero-field-cooled magnetization

    can be observed and its value increases from around 5 to 10 K with increasing Co concentration. On the basis of these results, it is found

    that the room-temperature ferromagnetism is not observed at any Co concentrations. It is suggested that the magnetic behaviour at the

    temperature more than 10 K changes from paramagnetism or spin-glass state to superparamagnetism or spin-glass state with increasing

    Co concentration.

    r 2006 Elsevier B.V. All rights reserved.

    PACS: 75.50.Pp; 75.70.i

    Keywords: Diluted magnetic semiconductor; AlN; Magnetic behaviour; FCZFC magnetization

    Diluted magnetic semiconductors (DMSs) have attracted

    much attention as materials with potential for application

    in spin-dependent electronic devices. In particular, DMSs

    with the high Curie temperature above room temperature

    (RT) have been of much interest in the viewpoint of

    fundamental physical topics as well as useful potential

    applications. Recently, on the basis of theoretical predica-

    tions[1], it is reported that several oxides and nitrides with

    the magnetic element, such as CoZnO [2], CoTiO2 [3],

    MnGaN [4] and CrAlN [5], have the high Curie

    temperature greater than RT. Among them, CrAlN

    shows the highest Curie temperature, and thus AlN mightbe the useful host semiconductor material for the room-

    temperature ferromagnetic DMSs [5]. However, in

    TMAlN (TM V, Co, Fe, Ni or Mn), their magnetic

    properties have been scarcely reported, and it is still unclear

    whether ferromagnetism can be observed at 300 K or not.

    In this paper, we choose Co as a magnetic element, because

    ferromagnetism has been observed at the temperature

    above 300 K in the CoZnO[2] or CoTiO2[3]. In order to

    clarify the magnetic behaviour of CoAlN (Al1xCoxN)

    thin films with various Co concentrations (x) of 0.060.25,

    we have investigated the temperature dependence of

    magnetic properties in these films.

    The 250-nm-thick Al1xCoxN thin films were fabricated

    at RT onto the thermally oxidized Si (0 0 1) substrates by

    reactive DC magnetron sputtering. The composition of

    Al1xCoxN films was evaluated using X-ray photoelectron

    spectroscopy (XPS). The details of the fabrication condi-

    tion were described in Ref. [6]. The magnetic properties

    were measured in the temperature range of 4300 K bymeans of SQUID magnetometer with a maximum field of

    50 kOe. The film structure was characterized by X-ray

    diffraction (XRD).

    The magnetization curves at various temperatures of

    Al1xCoxN films are shown in Fig. 1. For all Co

    concentrations, no hysteresis can be observed in any

    magnetization curves at the temperatures of 10300 K:

    both remanent magnetization and coercivity are zero at all

    temperatures. From these results, it is found that any

    Al1xCoxN films with the Co concentration of 0.060.25

    ARTICLE IN PRESS

    www.elsevier.com/locate/jmmm

    0304-8853/$ - see front matterr 2006 Elsevier B.V. All rights reserved.

    doi:10.1016/j.jmmm.2006.11.038

    Corresponding author. Tel.: +81 6 68797488; fax: +81 6 68797522.

    E-mail address: [email protected] (T. Sato).

    http://www.elsevier.com/locate/jmmmhttp://localhost/var/www/apps/conversion/tmp/scratch_1/dx.doi.org/10.1016/j.jmmm.2006.11.038mailto:[email protected]:[email protected]://localhost/var/www/apps/conversion/tmp/scratch_1/dx.doi.org/10.1016/j.jmmm.2006.11.038http://www.elsevier.com/locate/jmmm
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    do not exhibit ferromagnetism in the temperature range of

    10300 K. However, the shape of the magnetization curve

    at each temperature depends markedly on the Co

    concentration. Namely, when the Co concentration x is

    below 0.10, the shape becomes linear in the range of

    magnetic field up to 750 kOe at all temperatures. These

    curves reveal that the magnetic behaviour is paramagnet-

    ism or spin-glass state. In contrast, when the Co

    concentration x is above 0.17, the shape remarkably

    deviates from the linear shape in the low-temperature

    region. These curves suggest that the magnetic behaviour is

    superparamagnetism or spin-glass state. From these

    results, it is considered that the magnetic behaviour

    changes from paramagnetism or spin-glass state to super-paramagnetism or spin-glass state with increasing Co

    concentration.

    In order to clarify the change of the magnetic behaviour

    in Al1xCoxN films, we investigated the temperature

    dependence of the magnetization in these films. As shown

    in Fig. 2, for the Co concentration x below 0.10, the

    magnetizations are almost zero at the temperature above

    50 K, and increase slightly with decreasing temperature in

    the range below 50K. These can be explained by the

    magnetic behaviour being paramagnetism or spin-glass

    state. In contrast, for the Co concentration x above 0.17,

    the magnetizations increase with decreasing temperature in

    the range of 10300 K. These are not due to paramagnet-

    ism. Thus, these results are consistent with the change of

    the magnetization curve (Fig. 1).

    In order to more precisely explore the magnetic

    behaviour of Al1xCoxN films with Co concentration

    above 0.17, we investigated the temperature dependence of

    magnetization showing the field-cooled (FC) and zero-

    field-cooled (ZFC) magnetization in these films. The peak

    in ZFC magnetization is observed in Fig. 3. The peak

    temperatures increase from 5 K to around 10K with

    increasing Co concentration. From these results, it is

    considered that the magnetic behaviour is superparamag-

    netism at the temperature more than 10 K. However, the

    behaviour shown here is also observed in the spin-glass.

    Thus, the possibility of the spin-glass state cannot be

    excluded completely.

    In order to verify the origin of the change of the

    magnetic behaviour, the film structure of Al1xCoxN films

    was investigated. These films seem to have the Wurtzite-

    type AlN single phase at all Co concentrations from XRD

    profiles. However, the other investigations using transmis-

    sion electron microscopy (TEM) imply that the structuraltransition, which can cause the change of the magnetic

    behaviour, is observed. More detailed investigation of the

    film structure is in progress now.

    In summary, it is concluded that the room-temperature

    ferromagnetism is not observed at any Co concentrations.

    It is suggested that the magnetic behaviour changes from

    paramagnetism or spin-glass state to superparamagnetism

    or spin-glass state with increasing Co concentration at the

    temperature more than 10 K.

    This work was partly supported by a Grant-in-Aid for

    Scientific Research (S), Encouragement of Young Scientists

    ARTICLE IN PRESS

    -50 -25 0 25 50

    -80

    -40

    0

    40

    80

    Magnetic Field, H / kOe

    dx = 0.2510 K

    50 K

    300 K

    300 K

    -50 -25 0 25 50

    -40

    -20

    0

    20

    40

    Magnetization,

    M/

    G

    c x = 0.17 10 K50 K

    -20

    -10

    0

    10

    20bx = 0.10 10 K

    50 K

    300 K

    -20

    -10

    0

    10

    20a x = 0.06 10 K

    50 K

    300 K

    Fig. 1. Magnetization curves at various temperatures of Al1xCoxN films

    with the Co concentration (x) of (a) x 0.06, (b) x 0.10, (c) x 0.17

    and (d) x 0.25. The magnetic field is applied in the film plane.

    0 100 200 3000

    10

    20

    30

    40

    50

    60

    Temperature, T / K

    Magnetiza

    tion,

    M/

    G

    : x = 0.06

    : x = 0.10

    : x = 0.17

    : x = 0.25

    Fig. 2. Magnetization as a function of temperature in the Al1xCoxN

    films with the Co concentration (x) of 0.060.25. The magnetic field is

    applied in the film plane and its value is fixed at 10 kOe.

    0 50 1006

    8

    10

    12 x = 0.25

    0 50 1006

    7

    8

    9

    Magnetization,

    M/

    G x = 0.17

    Temperature, T / K

    200 300 200 3000 50 1006

    8

    10

    12

    0 50 1006

    7

    8

    9

    Magnetization,

    M/

    G

    200 300 200 300

    a b

    Fig. 3. Field-cooled (closed circles) and zero-field-cooled (opened circles)

    magnetization as a function of temperature in Al1xCoxN films with the

    Co concentration (x) of (a) x 0.17 and (b) x 0.25. The magnetic fieldis applied in the film plane and its value is fixed at 0.1kOe.

    T. Sato et al. / Journal of Magnetism and Magnetic Materials 310 (2007) e735e737e736

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    (B) and Priority Assistance of the Formation of World-

    wide Renowned Centers of ResearchThe 21st Century

    COE Program (Project: Center of Excellence for Advanced

    Structural and Functional Materials Design) from the

    Japanese Ministry of Education, Culture, Sports, Science

    and Technology.

    References

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    [4] M.L. Reed, N.A. El-Masry, H.H. Stadekmaier, M.K. Ritums,

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    [6] Y. Endo, T. Sato, A. Takita, Y. Kawamura, M. Yamamoto, IEEE

    Trans. Magn. 41 (2005) 2718.

    ARTICLE IN PRESS

    T. Sato et al. / Journal of Magnetism and Magnetic Materials 310 (2007) e735e737 e737