2. Update for Sales and Profit 3. Investment pointcfs9.blog.daum.net/upload_control/download.blog?fhandle... · 1. Company profile Products Major Competitors 2. Update for Sales and

April, 2 0 0 8

This material contains estimates and projections based on Company's plan and JUSUNG recommends not to place any undue reliance on them.JUSUNG does not undertake to update any of the statements in light of new information or future events. Feb. 2008

World’s B e s t P e op le , World’s B e s t P rodu c t s , World’s B e s t C om p a n y . 2/33

Contents

1. Company profile� Products � Major Competitors

2. Update for Sales and Profit

3. Investment point� Business Perspective � Competitiveness

4. Appendix� SDCVD(ALD) Technology� Solar Cell Technologies



T a r g et I nd u str i es

DiffusionThin Films

Etch Solutions

Semiconductor Equipment

Thin Film Crystalline Si

Solar Cell Equipment

TFT-LCDOLED

Display Equipment

1995~

2006~

2002~

Next Generation Lighting

Drivers for future growth

2008~

Stability, Growth Business Portfolio



LP CVD

HDP CVD

MO CVD

UHV CVD

POLY ETCH

PE CVD (5G~8G)SD CVD(ALD)

BEVEL ETCH

Total Integration

Thin Film

Dry Etch

OLED

TFT LCD

C-Si Solar Cell

Thin Film Solar Cell

Semiconductor FPD Solar Cell

PE CVD (10G)

P r od u c ts

GaN MOCVD(ALE)

OLED

Lighting(2008)

Released Products

Under Development

Hybrid Solar Cell



Solutions of Diffusion & Thin Films for nano-scale devices.

S em i c ond u c tor E q u i p m ent-1

SemiSemi--batch typebatch typeCyclone Cyclone PlusPlusTMTM

SDCVD (ALD / LP-CVD)(World’s first technology)

SingleSingle--wafer typewafer typeEurekaEurekaTMTM

MOCVD

UHVCVD

ALD / CVD Integration



Solutions of plasma applications for nano-scale devices.

Qualified in mass production line in 2007.

S em i c ond u c tor E q u i p m ent-2

D ry E t c h e rD ry E t c h e rT a c h y o nT a c h y o n TMTM

POLY / BEVEL

H D P C V D H D P C V D T ru f ilT ru f ilTMTM



Gen. 5, Gen. 5.5, Gen. 6, Gen. 7, Gen. 8 Systems Ready

Selected as a collaboration partnerfor very large size LCD equipment

by Korean Government.

Delivered>180 Chambers

Supplying to the major LCD manufacturers in Korea, Taiwan and China

TECHNOVATECHNOVATMTM SystemSystem

D i sp l a y E q u i p m ent



Implementation of JUSUNG’s field proven Semiconductor & TFT-LCD technology

Rapidly growing market for 2007 ~ 2010 (CAGR > 65%)

Thin Film Solar Cell Thin Film Solar Cell

S ol a r Cel l E q u i p m ent

InIn--Line System for cLine System for c--Si Solar CellSi Solar Cell

Mono / Multi Crystalline Si

Implementation of JUSUNG’s field proven technologies for RIE, Plasma doping, PECVD

Highest level of efficiency, lowest cost by reducing process steps

End-to-End Solution



OLED Total Integration OLED Total Integration GaN MOCVDGaN MOCVD

Organic Deposition System

Cathode Deposition System

TFE System(Thin Film Encapsulation)

Suitable for Mass-Production ofLow cost – High Quality LED

Advanced Plasma technology

D r i v er s f or f u tu r e g r ow th - N ex t G ener a ti on L i g h ti ng



M a j or Com p eti tor s

--AKTPECVDTFT LCD

Lam ResearchTELApplied MaterialsDry Etch

Turn keysolution for Solar Cell

OLED

Semiconductor

Product Group

--TokkiIntegratedSolution

ULVACApplied MaterialsOerlikonThin Film Si

OTBCentrothermRoth & RauBulk Si

-Novellus SystemApplied MaterialsHDP CVD

ASMI(Dielectric)

Hitachi Kokusai Electric(Dielectric)

TEL(Metal, Dielectric)

SDCVD(ALD)

Competitor-3Competitor-2Competitor-1Application



Contents







F i na nc i a l S u m m a r y ( 20 0 5 ~ 20 0 8 1Q )

��

(4.2)

(31.2)

1Q

2.2(5.6)

1.6

5.8

10.5

12.2

26.8

39.0

2008

11.4(18.8)

(19.3)

11.7

14.9

20.2

(52.7)

31.9

28.7

60.6

1Q

2007

15.1(22.9)

(16.3)

10.7

9.3

17.9

(43.6)

28.7

37.1

65.8

2Q

10.9(20.5)

(14.1)

7.5

7.1

13.7

(39.8)

21.2

32.1

53.3

3Q

2.0(6.2)

(5.5)

1.8

5.4

9.8

(35.9)

11.6

20.7

32.3

4Q

39.4(18.6)

(14.9)31.7

36.6

61.7

(44.0)93.4

118.6

212.0

Total

- 81.0%16.9

(14.0)5.8

(25.6)3.9

(11.1)4.7

(15.3)2.5

(7.6)4.9

(3.7)Net Profit

(%)

(10.2)(3.5)(13.0)(12.2)(10.0)(6.3)- 86.0%

12.30.84.53.73.38.3Operating Profit(%)

R&D to Sales24.6% �� 14.8%25.86.67.25.46.623.5R&D Expense

SG&A to Sales33.3% �� 27.0%45.411.012.611.210.644.0SG&A

(47.6)(51.5)(49.1)(48.5)(42.5)(39.9)- 21.5%p

57.711.717.214.913.952.3Gross Profit(%)

COGS to Sales47.4% �� 68.8%63.411.017.815.818.878.9COGS

- 35.6%121.122.735.030.732.7131.2Sales

Total4Q3Q2Q1QTotal1Q ��07��1Q ��08

20062005



131.2

32.7 30.7 35.022.7

121.1

60.6 65.853.3

32.3

212.0

39.06.3%

10.0%

12.2% 13.0%

3.5%

10.1%

19.3%

16.3%

5.5%

14.9%

4.2%

14.1%

-

50.0

100.0

150.0

200.0

250.0

'05Total

'061Q

'062Q

'063Q

'064Q

'06Total

'071Q

'072Q

'073Q

'074Q

'07Total

'081Q

0.0%

5.0%

10.0%

15.0%

20.0%

25.0%

Sales Operating Margin

(in Wbn)

S a l es & O p er a ti ng P r of i t( 20 0 5 ~ 20 0 8 1Q )



S a l es B r ea k d ow n( 20 0 5 ~ 20 0 8 1Q )

��

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by Region

��

Revenue(Wbn) : 131.2 121.1 212.0 39.0



S a l es B r ea k d ow n( 20 0 5 ~ 20 0 8 1Q )

��

��

��

��

� � ��

��

��

��

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��

� � � � � � � � � � � � � � � � � � � � � � � � � � � ��

by Products

� � � � � � � � � � � � � � � � � � � � � � � � � � � � � � � � � � � � � � � � � � � � � � ��

Revenue(Wbn) : 131.2 121.1 212.0 39.0



Contents







Product Diversification ;

Dielectric SDCVD(ALD), Metal SDCVD(ALD)

� SDCVD, HDPCVD, Dry Etch, Bevel Etch

Keyword ; Diversification

B u si ness P er sp ec ti v e - S em i c ond u c tor

Customer Diversification ;

DRAM Customers

� DRAM, NAND, Logic Customers

HDPCVDDr y E t c h

B e v e l E t c h(’0 8 ~ )

M e t a l S DCVD(’0 7 ~ )

Di e l e c t r i c S DCVD(’0 6 ~ )

L o g i c(‘0 8 )

DR A M(‘0 7 )

N A N D(‘0 8 )



Keyword : Increased Share of Market

Investment for maximum capacity of 4.5G ~ 7.5G thanks to the market recovery.

Growing demand for 8G.

New development for 10G.

Aggressive marketing for the leading share of market.

B u si ness P er sp ec ti v e – F l a t P a nel D i sp l a y

Max. S o M4 . 5 G ~ 7 . 5 G 8 G 1 0 G

E x t e n d e d M a r k e t i n g & Di v e r s i f i e d Cu s t o m e r s

Products proven in the field

Product ready to serve

Product under development



Booming Market

� ��

��

��

�� ! "�# $ % �$ �

& # " #�' ' � '

C-S i

S o l a r

Lowest $ / W a tt

Keyword ; Minimum COST/Watt

No doubt about the booming demand (T/F and c-Si type).

JUSUNG’s new technologies, ready to provide the world’s lowest $/Watt.

Prompt launching into Europe, India, Taiwan, USA and China through various partnership.

Business for End-to-end solution as well as critical unit application.

B u si ness P er sp ec ti v e – S ol a r Cel l



Ceaselessan d ef f ec t i v ei n v est m en tI n R & D

Cu st o m ero r i en t edo p er at i o nr esp o n se an dr ead i n ess

Cr eat i v e an dI n n o v at i v eT ec h n o lo g i es

H u m anCap i t al w i t hlead i n gex p er t i se

Com p eti ti v eness



Innovative and unique technology based on industry’s highest level of IP.

2003 2004 2005 2006 2007

522573

736840

986

(Unit : Case)

JUSUNG A ** T **

2.25

0.48

0.85

Com p eti ti v eness - H i g h est l ev el of I P



Korea5 Customers

Korea5 Customers

Japan3 Customers

Japan3 Customers

Taiwan7 Customers

Taiwan7 Customers

Singapore1 CustomerSingapore

1 Customer

USA7 Customers

USA7 Customers

Europe5 Customers

Europe5 Customers

China2 Customers

China2 Customers

JUSUNG supplies equipments to 30 customers in the world.

Established 3 subsidiaries and 16 Offices for global support and marketing.

JUSUNG Europe

JUSUNG Asia PacificJUSUNG America

HeadquarterSubsidiaryLocal Office

HQ

Customer diversity and global support network



Contents







� ��

� ��

A p p end i x



M2

M1

p-well n-well

• Capacitor dielectric: CVD: TaO, BST SDCVD(ALD): Al2O3, HfO2, ZrO2

• Electrode: SDCVD(ALD):TiN CVD: Ru, HSG,PH3/N

• Barrier: SDCVD(ALD) TiN• Capping layer: SDCVD(ALD) Al2O3

• Capacitor dielectric: CVD: TaO, BST SDCVD(ALD): Al2O3, HfO2, ZrO2

• Electrode: SDCVD(ALD):TiN CVD: Ru, HSG,PH3/N

• Barrier: SDCVD(ALD) TiN• Capping layer: SDCVD(ALD) Al2O3

• Gate electrode: Si-Ge• Gate dielectric:SDCVD Al2O3, HfO2• Gate Nitridation• Gate Spacer : SDCVD SiO2/Si3N4• Gate Etch

• Gate electrode: Si-Ge• Gate dielectric:SDCVD Al2O3, HfO2• Gate Nitridation• Gate Spacer : SDCVD SiO2/Si3N4• Gate Etch

• Contact barrier:SDCVD TiN

• S/D: SEG w/ in-situ clean• STI: HDP CVD

• Contact barrier:SDCVD TiN

• S/D: SEG w/ in-situ clean• STI: HDP CVD

• IMD: HDP CVD• Barrier Metal : SDCVD(ALD) TiN• Cu Seed: SDCVD(ALD) Cu• Cu Barrier : TaN

• IMD: HDP CVD• Barrier Metal : SDCVD(ALD) TiN• Cu Seed: SDCVD(ALD) Cu• Cu Barrier : TaN

J U S U N G ’s T ec h nol og y i n S em i c ond u c tor D ev i c e



CVD(Chemical Vapor Deposition) SDCVD(Space Divided CVD )

By the Topology Aspect

Topology

Aspect

Electrical

Performance

Process

Temperature

Thin Film

Controllability

M oti v a ti on of S D CV D ( A L D )



CVD Mode ALD Mode

Gas A Gas B

AB

wafer

1. Gas A 2. Purge / Pump down

3. Gas B 4. Purge / Pump down

JUSUNG’s SDCVD technology dramatically enhances the speed limit of ALD by adopting a rotating injector and planar semi batch configuration.

JUSUNG’s SDCVD technology dramatically enhances the speed limit of ALD by adopting a rotating injector and planar semi batch configuration.

CV D v s. A L D



��

Device Node

Target Film

0.1um & above 0.1um~ 80nm 80nm~50nm 50nm ~ beyond

SiO,TaO(CVD) AlO(SDCVD/ALD) HfO, ZrO w/ AlO(SDCVD/ALD)

TiO, STO(?)(SDCVD/ALD)

Batch Type Working Partly Working Not Properly Working

Single Type Not Necessary Working with limited productivity

Semi Batch Type

Jusung Not Necessary Working

S D CV D ( A L D ) T ec h nol og y v s. T y p e of E q u i p m ent



TCO(Transparent Conductive Oxide)SnO2:F or ZnO:Al Metalization

Front TCO Laser Scribing A-Si:H To p-cell depositionP,i,n-layer by PECVD

Laser Scribing Back Electrode SnO2:For ZnO:Al Metalization

Anti-Reflection Film Al or Ag Metalization

Back Electrode Laser Scribing

T h i n F i l m S ol a r Cel l S ta nd a r d P r oc ess







5G(1,100x1,300) ~ 8.5G(2,200x2,500) 125x125 or 156x156 mmStandard Size (�� Productivity)

Power Plant, Roof Top, BIPV, Flexible

(Building Integrated Photovoltaic)Power Plant, Roof Top, AerospaceDemand Driver

* TF on Glass, Commercial

* Multi c-Si, Commercial

2010

Now

Low Cost, High ProductivityHigh EfficiencyAdvantage

7% (a-Si single jct.)14%Efficiency

(Electricity Conversion)

2010

2007

80%

90%

23%

Critical

High

Low

c-Si Solar Cell

Market Share

Substrate Shortage Issue

Manufacturing Cost (�� $/Watt)

Initial Investment

Item

11%

10%

No

20%

Low

High (3x)

TF Solar Cell

S ol a r Cel l M a i nstr ea m s Com p a r i son



Innovation b e y ond th e l im it.

Documents

2. Update for Sales and Profit 3. Investment pointcfs9.blog.daum.net/upload_control/download.blog?fhandle... · 1. Company profile Products Major Competitors 2. Update for Sales and