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1
Sponsored byThe Institute of Electrical and Electronics Engineers (IEEE)
Ultrasonics, Ferroelectrics and Frequency Control (UFFC) Society
U
2005-2006 International Distinguished Lecturer Program
Ken-ya HashimotoChiba University
2
Introduction to RF SAW/BAW Filters
Ken-ya HashimotoChiba University
[email protected]://www.em.eng.chiba-u.jp/~ken
3
RF Filter Basics RF SAW and BAW Devices Major Players
ContentsContents
4
RF Filter Basics RF SAW and BAW DevicesRF SAW and BAW DevicesRF SAW and BAW Devices Major PlayersMajor PlayersMajor Players
ContentsContents
5
Mobile Phone market
Source: Prismark report March 2005
6
Evolution of component count in a Mobile Phone
7
Suppression of Spurious in Power Amplifier (PA) Output
RF-BPFPA
Role of Tx FiltersRole of Tx Filters
ωfrequency
Spec
trum
Tx RxInterferer
Output Power Reduction by 20% through Insertion loss IL of 1dB
Current Consumption
Heat Generation
Ultimate IL Reduction Necessary!
8
Role of Rx FiltersRole of Rx FiltersInterferer Suppression in Out-of-Band to Avoid Saturation, Mixing, etc.
RF-BPF LNA
ωfrequency
Spec
trum
ωfrequency
Spec
trum
ωfrequency
Spec
trum
Frontend Stage is Most Important (Low Loss + Low Noise)
9
Typical situation in a phone Strong interference from other phones and
own Tx signal
f[MHz]1850
19101930
19902450
Tx Rx ISM
US-PCS
wantedRx
120 dB lower !signal
level
GPS
10
Highly selective RF-filters needed
f[MHz]1850
19101930
19902450
Tx Rx ISM
US-PCS Rx filterattenuation[dB]
0
10
20
30
40
passband
3
11
Trade-Off Between Temp. Stability & Bandwidth
T driftω
(a) Wider Transition Bandwidth
(b) Narrower Transition Bandwidth
T driftω
Efficient Use of Frequency Resources ⇔ Narrow Transition Bandwidth (Or Improve Production Yield)
12
0.80 0.82 0.84 0.86 0.88 0.90 0.92 0.94-30
-20
-10
0
10
20
LNA + SAW filter
Ideal Case
|S21
| (dB
)
f (GHz)
LNA
When S22 of PA output is NOT Negligible
RF Filter Causes Ripples
13
If Passive Filter is Symmetry and Loss-Less,
S22=S11, S12=S21, |S11|2+|S21|2=1, S11S21*+S11
*S21=0
212
2111 1|| SSjS −±= −
S22 and S11 are closely related!
High Q factor possesses Longer Time Delay.
Good Passive Filters can Generate Large Passband Ripples
14
-6 -5 -4 -3 -2 -1 0 1 2 3
56789
1011121314
Pout
(dB
m)
Pin (dBm)
with filter with S11=0
with filter
without filter
Influence of Filter S11 for Class AB PA
15
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 20123456789
10111213
Pout
(dB
m)
Pin (dBm)
14.7-j10.8
35.9-j5.945.2-j2.3
Influence of Filter Impedance for Class AB PA
16
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5
0.20.3
(1)(2)
PAE
Pin (dBm)-6 -5 -4 -3 -2 -1 0 1 2 3 4
67891011121314
(1)(2)
Pout
(dB
m)
Pin (dBm)0
0.40.50.60.70.8
(1)Capacitive Termination for Harmonics
(2) 50 Ω termination for Harmonics
Influence of Impedance for Harmonics for Class AB PA
17
R0V0
R0
R R0
P1
P
P3
P2
R0
P4 Filter
Filter
S11 Suppressor for RF Filters based on Quadrature Hybrids
18
0.80 0.82 0.84 0.86 0.88 0.90 0.92 0.94-60
-50
-40
-30
-20
-10
0S 1
1(d
B)
frequency (GHz)
0.80 0.82 0.84 0.86 0.88 0.90 0.92 0.94-60
-50
-40
-30
-20
-10
0
S 21
(dB
)
frequency (GHz)
Experimental Results
Using Huge Microstrip-Based Hybrids
(10x5 cm2)
19
Experimental Results
Using 1005 SMD-Based Hybrids
0.80 0.82 0.84 0.86 0.88 0.90 0.92 0.94-60
-50
-40
-30
-20
-10
0
frequency (GHz)
0.80 0.82 0.84 0.86 0.88 0.90 0.92 0.94-60
-50
-40
-30
-20
-10
0
frequency (GHz)
S 11
(dB
)
S 21
(dB
)
C12
C12C12
C12 L1
L1L2 L2
20
RF Filter BasicsRF Filter BasicsRF Filter Basics RF SAW & BAW Filters Major PlayersMajor PlayersMajor Players
ContentsContents
21
Surface Acoustic WaveSurface Acoustic WaveBulk Acoustic Wave (BAW):Longitudinal Wave (Primary Wave)
Transverse Wave (Share Wave, Secondary Wave)
Surface Acoustic Wave (SAW):
(Rayleigh SAW)Propagation of
Seismological Waves
22
Surface Acoustic Wave (SAW) Device
Vout
Vin
Piezoelectric substrate
Interdigital Transducers (IDT)
SAW
Mass Production by Photolithography Low loss, Miniature & Low price Operation inVHF-UHF ranges
Line width λ/4=0.5µm (f=2GHz)
23
Impulse Response
Independent Control of Amplitude and Phase Responses
SAW Transversal FiltersSAW Transversal Filters
24
Impulse Response Frequency Response
t f
t
t
∫+∞
∞−
−= dtjftthfH )2exp()()( π∫+∞
∞−
+= dfjftfHth )2exp()()( π
f
f
25
454137 49 53
10 dB/div
FREQUENCY (MHz)43.7541.7539.75 45.7547.75
1 dB/div
50ns/div
FREQUENCY (MHz)
SAW Transversal Filter for CATV
Ref. 15dB
26
8070605040302010
0
67.5 68 68.5 69 69.5 70 70.5 71 71.5 72 72.5Rel
ativ
e In
serti
on L
oss i
n dB
Frequency in MHz
ExperimentSimulation
SAW IF Filter for IS-95
Good Response but Higher Insertion Loss
27
SAW Resonator FilterSAW Resonator Filter
Mass Production by Photolithography High Frequency, Low Loss, High Stability Cheap(?), Small(?)
Interdigital Transducer (IDT)
Reflector (Al)λ
Piezo-Substrate (42oYX-LiTaO3)
28
Piezoelectric Material
+
-
C0 η
Mk-1
V F
i v
C0
L
R
C1
Analogies between V⇔F and I⇔v reduce toM⇔L, η⇔ R, k ⇔ 1/C
(a) Electric + Mechanical Circuit
Application of Electric Field to Piezoelectric Material,
(b) Electrical Equiv. Circuit
∫ ∝=++ VFvdtkvdtdvM η
29
Frequency
Adm
ittan
ce
ωr ωa
B
G
Resonance CharacteristicsResonance Characteristics
Resonance Frequency ωr=1/ C1LAnti-Resonance Frequency ωa=1/ L(C1
-1+C0-1)-1
30
Ladder-Type SAW FilterLadder-Type SAW Filter
Topology
Low Loss High Power Durability Moderate Out-of-Band Rejection
31
Performance of Ladder-Type SAW FilterPerformance of Ladder-Type SAW Filter
W-CDMA-Rx
-50-45-40-35-30-25-20-15-10-50
1900 2000 2100 2200 2300 2400-5
-4
-3
-2
-1
0
Tx Rx
Frequency (MHz)
Fujitsu FAR-F6CP-2G1400-L21M
Scat
terin
g Pa
ram
eter
S21
(dB
)
Scat
terin
g Pa
ram
eter
S21
(dB
)
32
1nH ( ≈ gold wire of 1mm length)
6Ω/mm @ 1GHz
1pF ( ≈ 1mm×1mm pad on LiNbO3 substrate)
150Ω/mm @ 1GHz
Influence of parasitic impedances is significant in GHz range!
33
S1 S2
P1 P3
S3
P2Ci Co
Filter Chip
Influence of Common ImpedanceInfluence of Common Impedance
Equivalent Circuit Origin of Lc
Ce1 Ce2 Ce3
Le1 Le1 Le1
Li Lo
Lc
Ce4
34
M
L2L1
M
L2-ML1-M
Influence of Mutual LInfluence of Mutual L
)()(
)()(
212
22
21
2
211
121
11
IIdtdM
dtdIML
dtdIL
dtdIMV
IIdtdM
dtdIML
dtdIM
dtdILV
++−=+=
++−=+=
35
λ/4
λ/4
TX-port
RX-port
Antenna-port
SAW filter, TX
SAW filter, RXstrip line
strip line
F re q u e n c y [M H z]
Att
enua
tion
[dB]
0
-2 0
-4 0
-6 018 0 0 19 0 0 20 0 0
T x ba n d Rx ban d
F re q u e n c y [M H z]
Att
enua
tion
[dB]
0
-2 0
-4 0
-6 018 0 0 19 0 0 20 0 0
T x ba n d Rx ban d
Antenna Duplexer for US PCS
Rx Band
Tx Band
Courtesy of Fujitsu Labs.
36
J.Tsutsumi, et al., Proc. IEEE Ultrason. Symp. (2004) pp. 954-958
Fujitsu Labs.
Bonding with Small Thermal Expansion Coef.
Temperature Compensation (1)
37
Temperature Compensation (2)
M.Kadota, et al., Proc. IEEE Ultrason. Symp. (2004) pp. 1970-1975 Murata MFG
Depositing SiO2 with Negative Temp. Coef.
38
Good Out-of-Band Rejection
Balun Function Transformer Function Low Loss Lower Power Durability
Symmetrical & Anti-
symmetricalResonances
Double Mode SAW (DMS) Filter
arsωωωω ωωωωr
ωωωω
Inse
rtio
n lo
ss (d
B)
Frequency
Electrically Isolated I/O
39
Structure of PitchPitch--Modulated IDT & ReflectorModulated IDT & ReflectorConventional Structure PitchPitch--Modulated StructureModulated Structure
IDT IDTREFECTOR
ModulatedModulated
ModulatedModulatedGap ControlledGap Controlled
Presented at IEEE 2004 UFFC Conf.
40
-8-7-6-5-4-3-2-10
800 850 900 950 1000 1050-80-70-60-50-40-30-20-10
0
Frequency [MHz]
Scat
terin
g pa
ram
eter
. S21
[dB
]
Scat
terin
g pa
ram
eter
. S21
[dB
]
DMS Filter with Modulated StructureDMS Filter with Modulated Structure
Fujitsu FAR-F5EB-942M50-B28E
41
Integrated RF Circuit Integrated RF Circuit
Current Antenna and RF Stage are Unbalanced
(a) Balanced I/O
(b) Unbalanced I/O
+
-
+-
42
Front-endBPF LNA
Inter-stageBPF IF-BPFMixer
Front-endBPF LNA IF-BPFMixer
Balun IF-Amp
IF-Amp
Discrete SAW Filter & Balun
Inter-stageBPF
SAW Filter with Balun Function
43
Vout+
Vout-
Vin
DMS Filter (Ideally No Common Signal)
Acoustically Coupled but Electrically Isolated
Common Signal Generation by Parasitics
44
Vout+
Vout-
Vin
Vin
Vout+Vout-
Z-conversion by DMS Filter
45
CSP for SAW Chip
By EPCOS
Embedded L
46
M.Goetz, C.Jones, J.Rao, K.Bhattacharjee and J.Flowers: "Advanced SAW Packaging for Modular Integration", Proc. 2nd International Symp. on Acoustic Wave Devices for Future Mobile Communication Systems (2004) pp. 145-150.
Wire-Based Packaging vs. CSP
47
(a) Substrate Etching (Fujitsu Labs.)
resonator
cavity
resonator
cavity
resonator
(b) Surface Micro-machining (Agilent, Epcos, ST Micro)
(c) Multi-Layer Reflector (Infineon, Philips), SMR (Solidly-Mounted Resonator)
Film Bulk Acoustic Resonator, FBAR
48
overlap Oxidepassivation
AlN
SiO2
SiO2
WSiNx
49R. Ruby, et al., IEEE Microwave Symp. (2004) pp.931-934
Ladder-Type FBAR FilterLadderLadder--Type FBAR FilterType FBAR Filter
By Agilent
50
Transversally Coupled Double-Mode Filter
Si
Electrodes
1:-1Rin C0
a CmLm Rma a
s CmLm Rms s
C0 RoutEin
Equivalent Circuit
1-Port Resonator When Parallel-Connected
Another 1-Port Resonator When Parallel-Connected with Inversion
Symmetrical & Antisymmetrical
Resonances
51
Fundamental Resonator by Quartz
Fundamental Resonator Filter on AT-cut Quartz (TOYOCOM TF2-D0AD6)
Anisotropic Etching of Quartz BulkGood Temperature StabilityUse of Single Crystal = High Q, High Uniformity
52G. G. Fattinger, et al., IEEE Microwave Symp. (2004) pp.927-930
Cascaded Coupled FBAR FilterCascaded Coupled FBAR FilterCascaded Coupled FBAR Filter
Electrically Isolated I/OBy Infineon
53
FBAR with Balun & Transformer Func.
50Ω:50Ω
50Ω:200Ω By Infineon
54M. Franosch, et al., IEEE Microwave Symp. (2004) pp.493-496
CSP for FBARBy Infineon
55
Agilents Latest Product/Technology: High Q Resonators and Filtersmanufactured in an “all-Silicon” package. Size 0.7 X 0.8 X 0.2 mm3
(GSM filter kit shown on a single kernel of short grain rice)
56
0
4.5 5.0 5.5 6.0
-40
-30
-20
-10
-50
Frequency (GHz)
Att
enua
tion
(dB
)
FBAR filter
SAW filter
Filter Response for Wireless LAN
Influence of Electrode Resistance Obvious for SAW at 5 GHz Range
FBAR Beneficial over 2 GHz?
Fujitsu Labs
57
Acoustic MigrationAcoustic MigrationStress-Induced Movement of Grain Boundary ⇒ Electrode Shortage
Electrode Scarcely Deformed in BAW Case
Countermeasure: Development of New Electrode Material System
58
1.3Frequency, f [GHz]
0.7 0.8 0.9 1 1.1
Inse
rtion
loss
[dB
]
0
10
20
30
40 1.2
Low Loss and Wideband SAW Filter Employing Cu-Grating/15oYX-LiNbO3 Substrate Structure
59
(a)Amplitude response (b) Group delay response
Constant-Group-Delay SAW Filter Using RSPUDTs
(a)
460 480 500 520 540 560 580
-70
-60-50
-40
-30
-20
-10
0
Frequency( MHz )
Inse
rtion
Los
s (d
B)
ExpSim
460 480 500 520 540 560 580100
150
200
250
300
350
Frequency (MHz)G
roup
del
ay (n
s)
60
RF Filter BasicsRF Filter BasicsRF Filter Basics RF SAW and BAR DevicesRF SAW and BAR DevicesRF SAW and BAR Devices Major Players
ContentsContents
61
EPCOS, Germany (RF+IF+Dup+FEM) Murata, Japan (RF+IF+Dup+FEM) Fujitsu, Japan (RF+IF+Dup) SEMCO, Korea (RF+Dup+FEM) SAWTEK, USA (RF+IF+Dup+FEM) Matsushita, Japan (Dup) Hitachi, Japan (FEM) Toyocom-Epson, Japan (RF+IF) Kyocera, Japan (RF+IF) NDK, Japan (RF+IF)
SAW Major PlayersSAW Major Players
62
Agilent Technology, USA Infineon Semiconductors, Germany Philips Semiconductors, Nederlands TFR Technologies (SAWTEK), USA Fujitsu, Japan EPCOS, Germany
FBAR Major PlayersFBAR Major Players
63
ST Microelectronics, France Toshiba, Japan Asahi Microsystem, Japan Sony, Japan Samsung, Korea Matsushita, Japan Ube Industries, Japan Asahi Glass, Japan Kinseki, Japan Hitachi, Japan Murata, Japan
FBAR DevelopersFBAR Developers
64
Intel, Israel Freescale, USA Skyworks, USA (?) RF MicroDevices, USA (?) NGK Insulators, Japan? Soshin Electric, Japan? Denso, Japan? Toppan Printing, Japan? Dai Nippon Printing, Japan? Other foundries?
FBAR Developers (continue)FBAR Developers (continue)