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DB3 BIDIRECTIONAL TRIGGER DIODE Features V BO : 32V Breakover voltage range : 28 to 36V Applications Functioning as a trigger diode with a fixed voltage reference, the DB3 can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts. All Dimensions in mm DO-35 Absolute Maximum Ratings (Limiting values) Parameter Symbol Value Unit Repetitive peak on-state current (tp=20μ s F=120 Hz) I TRM 2 A Operating junction temperature range T j -40 ~ +125 Storage temperature range T stg -40 ~ +125 Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. Electrical Characteristics (T j =25unless otherwise specified) Parameter Symbol Test Conditions Value Unit MIN. 28 TYP. 32 Breakover voltage* V BO C=22nF** MAX. 36 V Breakover voltage symmetry |V BO1 -V BO2 | C=22nF** MAX. ±3 V Dynamic breakover voltage* V V BO and V F at 10mA MIN. 5 V Output voltage* V O see diagram 2(R=20Ω ) MIN. 5 V Breakover current* I BO C=22nF** MAX. 50 μ A Rise time* tr see diagram 3 MAX. 2 μ s Leakage current* I R V R =0.5V BO max MAX. 10 μ A *Applicable to both forward and reverse directions. **Connected in parallel to the device. 0.079(2.0) MAX 0.020(0.52) TYP 0.165 (4.2) MAX 1.0 2(26.0) MIN. 1.0 2(26.0) MIN.

DB3kdiode.com/admin/diotech_file/DB3.pdf · 2010. 5. 12. · DB3 RATINGS AND CHARACTERISTIC CURVES Figure 1. Relative variation of VBO versus junction temperature (typical values)

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  • DB3BIDIRECTIONAL TRIGGER DIODE

    FeaturesVBO : 32V

    Breakover voltage range : 28 to 36V

    ApplicationsFunctioning as a trigger diode with a fixed voltage reference, the DB3 can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts. All Dimensions in mm

    DO-35

    Absolute Maximum Ratings (Limiting values)

    Parameter Symbol Value UnitRepetitive peak on-state current (tp=20μ s F=120 Hz) ITRM 2 A Operating junction temperature range Tj -40 ~ +125 ℃Storage temperature range Tstg -40 ~ +125 ℃

    Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability.

    Electrical Characteristics (Tj=25℃ unless otherwise specified)

    Parameter Symbol Test Conditions Value UnitMIN. 28 TYP. 32

    Breakover voltage* VBO C=22nF**

    MAX. 36

    V

    Breakover voltage symmetry |VBO1-VBO2| C=22nF** MAX. ±3 VDynamic breakover voltage* △V VBO and VF at 10mA MIN. 5 V Output voltage* VO see diagram 2(R=20Ω ) MIN. 5 V Breakover current* IBO C=22nF** MAX. 50 μ ARise time* tr see diagram 3 MAX. 2 μ sLeakage current* IR VR=0.5VBO max MAX. 10 μ A

    *Applicable to both forward and reverse directions. **Connected in parallel to the device.

    0.079(2.0)MAX

    0.020(0.52)TYP

    0.165 (4.2)MAX

    1.0 2(26.0)MIN.

    1.0 2(26.0)MIN.

  • DB3RATINGS AND CHARACTERISTIC CURVES

    Diagram 2. Test circuit

    Diagram 1. Voltage – current characteristic curve Diagram 3. Rise time measurement

  • DB3

    RATINGS AND CHARACTERISTIC CURVES

    Figure 1. Relative variation of VBO versus junction temperature (typical values)

    Figure 2. Repetitive peak pulse current versus Pulse duration (maximum values)

    Figure 3. Time duration while current pulse is higher 50 mA versus C and Rs (typical values)