2.3.1 Teaching Learning Process

2.3.1 Teaching Learning Process

Contents

1. Course Plan and Lesson Plan

2. Sample copy of mentoring

3. Sample copy of Paper Publications

4. Sample copy of Mini Projects

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PHOTOCATALYTIC DEGRADATION OF E. COLI PRESENT IN DRINKING WATER

USING COMMERCIAL, SYNTHESIZED AND DOPED TI....

Article · December 2017

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Anil Neerukonda Institute of Technology and Sciences

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STUDIES ON PHOTOCATALYTIC DEGRADATION OF E. COLI

PRESENT IN DRINKING WATER USING COMMERCIAL,

SYNTHESIZED AND DOPED TIO2 AS CATALYST

*Shiva Naresh Mulampaka 1 , A. B. Aditya Naga SaiNaidu2 1,2 Department of Chemical Engineering, ANITS, Visakhapatnam, 531162, INDIA 1,2

[email protected]

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Abstract: Photocatalytic degradation employing semiconductors as photocatalyst is a promising and attractive method for

the removal of pollutants in wastewater. TiO2 has been identified as the most effective and useful photocatalyst. However,

the applications of TiO2 has been retarded by fast recombination of electron-hole pairs and their wide band gap which

corresponds to the UV light. Therefore, the study with modifying TiO2 in order to reduce the electron-hole

recombination and sensitization towards visible light is one of the current hotspots in the photocatalyst research.

Photocatalytic degradation experiments were carried out using E. coli, UV light was mainly used as photon source. The

proposed study aims at investigating the above mentioned aspects by conducting an in-depth study of E. coli degradation

using commercially available, sol-gel synthesized and doped TiO2. Experimental runs were carried out with varying

inoculum levels of 1 ml/L, 10 ml/L, 20 ml/L and this was fixed at 20 ml/L and also with varying concentrations of

commercially available TiO2 i.e. 0.05 g/L, 0.1 g/L, 0.5 g/L, 0.7g/L, 1 g/L and 2 g/L in 100 ml and 1L total volume where 0.5

g/L was found to be optimum catalyst concentration for which the time taken was 2 h to degrade. Degradation studies

were also conducted with sol-gel synthesized TiO2 and Ag doped TiO2 which took 9 and 6 min respectively for the

optimum 0.5g/L catalyst concentration. Also Ag doped TiO2 was tested under sunlight for which the degradation time

was 30 min.

Keywords: Photocatalytic degradation, Photocatalyst, sol-gel, Ag doped , E.coli

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I INTRODUCTION

Water pollution is a major problem in the global context,

which is leading to worldwide cause of death and diseases

that account for the death of more than 14,000 people daily

[1,2]. Drinking Water contaminated with chemicals and

pathogens like bacteria, viruses and fungi cause several water

borne diseases like diarrhea, nausea, dysentery. In extreme

cases some pathogens may infect the lungs, skin, eyes,

nervous system, kidneys, or liver and the effects may be more

severe, chronic, or even fatal. Of them diarrhea caused by

E.coli is posing a heavy threat on adults as well as infants. It

produces a toxin that damages the lining of the intestines

resulting in hemorrhagic diseases [3,4]. The World Bank

estimated that 21% of communicable diseases in India are

related to unsafe water and diarrhoea alone causes more than

1,600 deaths daily in India [5]. Nearly 60% of infant

mortality can be linked to a water related infectious disease;

globally, diarrhoea is the third largest cause of morbidity and

the sixth largest cause of mortality, causing up to 2.2 million

deaths per year. Morbidity and mortality are the greatest

amongst children under five years of age [6,7]. Research has

been done extensively to remove harmful disease causing

pathogens and resulted in many conventional methods like

chlorination, filtration, ozonationetc., which can effectively

kill the pathogenic microorganisms, however the formation of

carcinogenic undesirable disinfection by-products (DBPs)

such as trihalomethanes (THMs), haloacetic acids and other

dissolved organic halogens limits their usage [8,9]. Also the

permissible level of E.coli in drinking water is zero colony

forming units per 100ml which may not be achieved by these

techniques.

Therefore there is an urgent requirement to

investigate innovative processes which can overcome these

e-ISSN: 2582-5208 International Research Journal of Modernization in Engineering Technology and Science

Volume:02/Issue:06/June -2020 www.irjmets.com

www.irjmets.com @International Research Journal of Modernization in Engineering, Technology and Science

[1326]

TCAD SIMULATION OF ALGAN/INALGAN/GAN HEMTS

(HIGH ELECTRON MOBILITY TRANSISTORS)

N. Ramkumar*1, Kotha S V Madhav*2, K. Karthik*3, S. Ruby*4, D. Mahesh*5

*1Assistant Professor, Department of Electronics and Communication Engineering,

Anil Neerukonda Institute of Technology & Sciences, Visakhapatnam, India.

*2,3,4,5 Students, Department of Electronics and Communication Engineering,

Anil Neerukonda Institute of Technology & Sciences, Visakhapatnam, India

ABSTRACT We report microwave and DC performance of a novel 50 nm Quaternary based AlGaN/InAlGaN/GaN (HEMTs) High

Electron Mobility Transistor with Al2O3 passivation and T-gate on SiC substrate. TCAD is used for simulating the

proposed HEMT structure. A peak drain current density(Ids) is shown at the regrown n++ GaN source/drain ohmic

contacts of 2.9 A/mm with low on-resistance 0.49 Ω.mm. A record power gain (fmax) and current gain cut-off

frequencies (ft) obtained are 425GHz and 310GHz respectively. These are achieved by substantial reduction in the

device extrinsic and intrinsic parasitic capacitance and resistances. Here AlGaN is used as back barrier-structure to the

7nm thin In0.13Al0.83Ga0.04N (Quaternary barrier) layer in order to compensate the short channel effects with 38V

improved breakdown voltage. For next generation, the prominent DC characteristic along with microwave characteristic

of proposed HEMT device is appropriate candidate for electronic high power millimeter wave applications.

Keywords: Quaternary barrier; double hetero-junction; millimeter wave; cut-off frequency; breakdown voltage

I. INTRODUCTION

The expedient performance of GaN based HEMTs such as low on resistance, high breakdown field, high current

density; high electron velocity, high power amplification and high thermal stability empowered the progress of high

power and high speed millimeter wave electronics and photonic applications [1-34]. Over the past two decades,

extensive research works has been carried out for significant improvements in operating frequency of the GaN-based

HEMT. Conventional AlGaN/GaN HEMT with 0.25 µm gate length shown its microwave performance f t/fmax of 82/103

GHz [15]. T. Palacio et. al. fabricated 100 nm AlGaN/GaN HEMT with InGaN back-barrier and the device shown

excellent ft/fmax of 153/230 GHz [16]. 150 nm recessed gate InAlN/GaN HEMT recorded ft/fmax of 70/105 GHz with 29

V breakdown voltage [17]. Dong Seup Lee et. al. reported ft/fmax of 245/13 GHz for 30 nm InAlN/GaN HEMT [18].

Fully passivtaed InAlN/GaN HEMT significantly improves the microwave performance ft/fmax of 205/220 GHz [19].

Jinwook W et. al. demonstrated high transconductance results from recessed gate InAlN/GaN with Al2O3 passivation

layer [20]. In spite of short channel effects, 30 nm gate length InAlN/GaN HEMT recorded ft/fmax of 373/28 GHz [21].

Lattice matched In0.17Al0.83N/GaN HEMTs demonstrated excellent high frequency performance than conventional

AlGaN/GaN HEMTs [17-21]. However, due to interface roughness scattering, improvement in 2-D electron gas

mobility in InAlN/GaN based HEMTs remains challenging [30] by immiscibility between AlN and InN. Existence of

narrower immiscibility, Quaternary barrier In0.16Al0.74Ga0.10N has been demonstrated high carrier mobility (μ> 1800

cm2/V · s) and high electron density (ns ~ 1.8 × 1013 cm−2) [22,23,24,25,29,32,33]. In recent years, the effort of nitride

researchers are directed towards lattice matched In0.16Al0.74Ga0.10N/AlN/GaN heterostructures. To obtain high ft/fmax

with simultaneous improvement in breakdown voltage for next generation high power millimeter wave electronics, it is

necessary to optimize the device structure for low gate resistance, parasitic capacitances and minimum gate leakage

current.

In this research work, a novel 50 nm T-gate lattice matched quaternary barrier In0.16Al0.74Ga0.10N/GaN HEMT is studied

and it’s DC and microwave characteristics are presented. Lg 50 nm InAlGaN/GaN HEMTs on SiC substrate is

exhibited a record ft/fmax of 310/425 GHz with simultaneous high output current density of (Ids) of 2.9 A/mm and

breakdown voltage of 48 V. AlGaN back barrier-structure along with a very thin 7nm InAlGaN barrier effectively

mitigates the short channel effect (DIBL= 80 mV/V) with improved breakdown voltage of 48 V

II. DEVICE STRUCTURE AND BANDGAP DIAGRAM In0.16Al0.74Ga0.10N/AlN/GaN/AlGaN double heterostructures on SiC schematic diagram is displayed in Fig.1 (a). The

proposed device made up of 7 nm In0.16Al0.74Ga0.10N quaternary barrier material, 1 nm wide bandgap AlN spacer layer

(6.02 eV), GaN channel and Al0.08Ga0.92N back-barrier. The drain and source regions are formed by Si doped n++ GaN

International Journal of Management, Technology And Engineering ISSN NO : 2249-7455

CODE.IO

M. Swathi, K. Bala Gupta, 's. Navya, "D. Ranjith, °P. Gopi Krishna

'Assistant Professor, 2.3,4. Sudent,

Department of Information Technology, Anil Neerukonda Institute of Technology and Sciences, Visakhapatnam, India

[email protected], kolluriu [email protected] sabbavarapu, 16,[email protected], "[email protected]. in,

patcha. 16.it(@anits.edu. in

Abstract

CODE.IO is an application which is used for providing grade for student's code. The

examiner can generate a custom input format depending on problem statement. Those

generated inputs are given to the code (uploaded by examiner) and corresponding outputs

are used to evaluate the code written by the Student. This helps the examiner to validate

the code easily and provide the grades based on the test cases passed. These testcases

check whether your solution addresses the problem including its various constraints, but

do not display the expected output of the testcase. For instance, the hidden testcases may

be defined to validate your coding logic against boundar)y values, error handling

scenarios, elc, Based on the number of testcases matched, the grade for each student is

provided and a report is generated.

Key Words: Constraints, Custom input, Python, Django, Automated Grading

1. Introduction The system Code.io is mainly developed to improve coding skill for students. Coding

is a life-long skill. It is a basic literacy in the digital age, and it is important for students to

understand and be able to work with and use the technology around them. For high level

information- oriented society, computer programming education is very important. In any

programming language, the coding progress can be measured by it's effectiveness and

efficiency of the logic used but not by the number of lines that the code has been written.

Generally, a code is defined as set of instructions executed by a machine according to the

user's input. A test case is an input given to a program and the output obtained from a

program. An Input/Output together known as testcase. In other words, a test case is a set

of conditions or variables under which a tester will determine whether a code under test

satisfies requirements or works correctly. The process of developing testcases can also

help find problems in the requirements or improve the algorithm of the code.

The testcase mainly consists of three parts. They are: (i) Input: These are the values

injected to the code for some processing according to the problem statement. (ii) Actual

Outpul: This is the output generated by your code. It may be correct or wrong. (ii)

Expected Output: This is the correct output which is expected by the machine to evaluate

your code. And the main feature of this system is providing an automatic grading facility

so that, it could reduce the work to the faculty from validating each and every student

code at the time of lab assessnments. Therefore, this system helps the students to inmprove

their coding skills and assess the students' performance and help them to learn

programming languages effectively and efticiently.

M &oa k)

Cuide M.RertSuJ)

rcat Co o.didn

Prof. P.PADMAJA Departrife i

Volume X, Issue I1, MARCH/2020

ad drzePepartment head ANITS. Visaks

OVER SPEED AND ALCOHOL DETECTION

SMS ALERT SYSTEM

ABSTRACT

With rising technologies and developed automobiles with high end motor vehicles with

increase horse power and accessible speed, it is easier than ever to come in contact with

accidents. People are able to drive recklessly, affecting the safety of common people.

Although speed limits and other prevention laws were implemented, road accidents

continue to happen every day. Some of the main contributing factors leading to motor

vehicle accidents are over speeding, rash driving and drunk driving.

The proposed work is to develop a device which controls accidents due to over speed, drunk

driving, rash driving on motor vehicles. This device will be able to detect over speed and

programmed to alert with a SMS. The device also includes an application which disables the

starting of the vehicle engine when alcohol consumption is detected. The device model is

designed using Arduino MEGA, Global system for Mobile communication(GSM), Global

positioning system(GPS), alcohol sensors.

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2.3.1 Teaching Learning Process