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JFET SwitchingNChannel Depletion
MAXIMUM RATINGS
Rating Symbol Value Unit
DrainSource Voltage VDS 25 Vdc
DrainGate Voltage VDG 25 Vdc
GateSource Voltage VGS 25 Vdc
Forward Gate Current IGF 10 mAdc
Total Device Dissipation @ TC = 25C
Derate above 25C
PD 350
2.8
mW
mW/C
Junction Temperature Range TJ 65 to +150 C
Storage Temperature Range Tstg 65 to +150 C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 10 Adc, VDS = 0) V(BR)GSS 25
Vdc
Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IGSS 1.0 nAdc
Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V)
Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V, TA = 100C)
ID(off)
10
2.0
nAdc
Adc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0)
IDSS 15 mAdc
GateSource Forward Voltage(IG(f) = 1.0 mAdc, VDS = 0)
VGS(f) 1.0 Vdc
DrainSource OnVoltage
(ID = 7.0 mAdc, VGS = 0)
VDS(on) 1.5 Vdc
Static DrainSource On Resistance
(ID = 0.1 mAdc, VGS = 0)
rDS(on) 150 Ohms
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 3.0%.
SMALLSIGNAL CHARACTERISTICS
SmallSignal DrainSource ON Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
rds(on) 150 Ohms
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss 5.0 pF
Reverse Transfer Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
Crss 1.2 pF
SWITCHING CHARACTERISTICS
TurnOn Delay Time (VDD = 10 Vdc, ID(on) = 7.0 mAdc, td(on) 5.0
ns
Rise TimeVGS(on) = 0, VGS(off) = 10 Vdc) (See Figure 1) tr 5.0
ns
TurnOff Delay Time (VDD = 10 Vdc, ID(on) = 7.0 mAdc, td(off) 15
ns
Fall TimeVGS(on) = 0, VGS(off) = 10 Vdc) (See Figure 1) tf 10
ns
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
November, 2001 Rev. 31 Publication Order Number:
2N5555/D
CASE 2911, STYLE 5TO92 (TO226AA)
12
3
2N5555
1 DRAIN
2 SOURCE
3GATE
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Figure 6. S11s Figure 7. S12s
0 350 340 330102030
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1.0
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900900
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800700
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ID = 0.25 IDSS
ID = IDSS
100
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600700
800
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500
ID = IDSS, 0.25 IDSS
900
500
800
700
600
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400
300 200
100
ID = 0.25 IDSS
ID = IDSS 100200
300
400
900
600
700
800
900
800
600
400300200
200
100ID = 0.25 IDSS
ID = IDSS
900
100500
700300400
500600700800
Figure 8. S21s Figure 9. S22s
COMMON SOURCE CHARACTERISTICSSPARAMETERS
(VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
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f, FREQUENCY (MHz)
10
gig @ IDSS
f, FREQUENCY (MHz)
0.5
Figure 10. Input Admittance (yig) Figure 11. Reverse Transfer
Admittance (yrg)
COMMON GATE CHARACTERISTICSADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25C)
f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 12. Forward Transfer Admittance (yfg) Figure 13. Output
Admittance (yog)
gig,INPUTCONDUCTANCE(mmhos)
20
10
0.3
0.50.7
1.0
2.0
3.05.0
7.0
20 30 50 70 100 200 300 500 700 1000
big,INPUTSUSCEPTANCE(mmhos)
gfg,F
ORWARDTRANSCONDUCTANCE(mmhos)
b
fg,FORWARDSUSCEPTANCE(mmhos)
grg,REVERSETRANSADMITT
ANCE(mmhos)
brg,REVERSESUSCEPTAN
CE(mmhos)
0.2
0.3
0.50.7
1.0
2.0
3.0
5.07.0
10
gog,OUTPUTADMITTANCE(mmhos)
bog,OUTPUTSUSCEPTANCE(mmhos)
0.3
0.01
0.1
0.2
10 20 30 50 70 100 200 300 500 700 1000
10 20 30 50 70 100 200 300 500 700 10000.01
0.02
0.03
0.3
10 20 30 50 70 100 200 300 500 700 1000
big @ 0.25 IDSS
big @ IDSS
grg @ 0.25 IDSS
gfg @ IDSS
gfg @ 0.25 IDSS
brg @ 0.25 IDSS
bog @ IDSS, 0.25 IDSS
gog @ IDSS
gog @ 0.25 IDSS
0.2 0.0050.007
0.02
0.03
0.05
0.07
0.1
0.050.07
0.1
0.2
0.50.71.0
brg @ IDSS
0.25 IDSS
gig @ IDSS, 0.25 IDSS
bfg @ IDSS
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0 350 340 330102030
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Figure 14. S11g Figure 15. S12g
Figure 16. S21 Figure 17. S22
0.7
0.6
0.5
0.4
0.3
0.04
0.5
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.03
0.02
0.01
0.0
0.01
0.02
0.03
0.04
0.1
900
900
800
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100800
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400300
200100
ID = 0.25 IDSS
ID = IDSS
100 200300
400
500600
700
800
900
900
600
700
800
ID = 0.25 IDSSID = IDSS
100
900
100
900
ID = 0.25 IDSS
ID = IDSS
1.5
100
400
500
600
700
800 900
ID = IDSS, 0.25 IDSS
COMMON GATE CHARACTERISTICSSPARAMETERS
(VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
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PACKAGE DIMENSIONS
CASE 2911ISSUE AL
TO92 (TO226AA)
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.3. CONTOUR OF
PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
CV
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.175 0.205 4.45 5.20B 0.170 0.210 4.32 5.33C 0.125 0.165 3.18
4.19D 0.016 0.021 0.407 0.533G 0.045 0.055 1.15 1.39H 0.095 0.105
2.42 2.66J 0.015 0.020 0.39 0.50K 0.500 --- 12.70 ---L 0.250 ---
6.35 ---N 0.080 0.105 2.04 2.66P --- 0.100 --- 2.54R 0.115 --- 2.93
---V 0.135 --- 3.43 ---
1
STYLE 5:PIN 1. DRAIN
2. SOUR CE3. GATE
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Notes
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ON Semiconductor and are trademarks of Semiconductor Components
Industries, LLC (SCILLC). SCILLC reserves the right to make
changeswithout further notice to any products herein. SCILLC makes
no warranty, representation or guarantee regarding the suitability
of its products for any particularpurpose, nor does SCILLC assume
any liability arising out of the application or use of any product
or circuit, and specifically disclaims any and all
liability,including without limitation special, consequential or
incidental damages. Typical parameters which may be provided in
SCILLC data sheets and/orspecifications can and do vary in
different applications and actual performance may vary over time.
All operating parameters, including Typicals must bevalidated for
each customer application by customers technical experts. SCILLC
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