3 Video Ampop -Tda6107q

7/25/2019 3 Video Ampop -Tda6107q

1/16

D T SHEET

Product specificationSupersedes data of 1999 Jun 18File under Integrated Circuits, IC02

1999 Oct 26

INTEGRATED CIRCUITS

TDA6107QTriple video output amplifier


2/16

1999 Oct 26 2

Philips Semiconductors Product specification

Triple video output amplifier TDA6107Q

FEATURES

Typical bandwidth of 5.5 MHz for an output signal of60 V (p-p)

High slew rate of 900 V/s

No external components required

Very simple application

Single supply voltage of 200 V

Internal reference voltage of 2.5 V

Fixed gain of 50

Black-Current Stabilization (BCS) circuit

Thermal protection.

GENERAL DESCRIPTION

The TDA6107Q includes three video output amplifiers inoneplastic DIL-bent-SIL9-pin mediumpower (DBS9MPF)package (SOT111-1), using high-voltage DMOStechnology, and is intended to drive the three cathodes ofa colour CRT directly. To obtain maximum performance,the amplifier should be used with black-current control.

ORDERING INFORMATION

BLOCK DIAGRAM

TYPE

NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TDA6107Q DBS9MPF plastic DIL-bent-SIL medium power package with fin; 9 leads SOT111-1

handbook, full pagewidth

MGK278

TDA6107Q

VDD

6

1, 2, 3

4

9, 8, 7Voc(3),Voc(2),Voc(1)

5Io(m)

Rf

MIRROR 5

DIFFERENTIAL

STAGE

VIP

REFERENCE

CURRENT

SOURCE

Ri

Vi(1),

Vi(2),

Vi(3)

Ra

3

3

CASCODE 1

CASCODE 2

MIRROR 2

1

MIRROR 4

MIRROR 3

MIRROR 1

THERMAL

PROTECTION

CIRCUIT

1

Fig.1 Block diagram (one amplifier shown).


3/16

1999 Oct 26 3



PINNING

SYMBOL PIN DESCRIPTION

Vi(1) 1 inverting input 1



GND 4 ground (fin)

Iom 5 black-current measurement output

VDD 6 supply voltage

Voc(3) 7 cathode output 3



handbook, halfpageVi(1)

Vi(2)

Vi(3)

GND

Iom

VDD

Voc(3)

Voc(2)

Voc(1)

1

2

3

4

5

6

7

8

9

TDA6107Q

MGK277

Fig.2 Pin configuration.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); voltages measured with respect to pin 4 (ground);currents as specified in Fig.1; unless otherwise specified.

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it isdesirable to take normal precautions appropriate to handling MOS devices (see Handling MOS Devices).

QUALITY SPECIFICATION

Quality specification SNW-FQ-611 part Dis applicable and can be found in the Quality reference Handbook.The handbook can be ordered using the code 9397 750 00192.

SYMBOL PARAMETER MIN. MAX. UNIT

VDD supply voltage 0 250 V

Vi input voltage at pins 1 to 3 0 12 V

Vo(m) measurement output voltage 0 6 V

Vo(c) cathode output voltage 0 VDD V

Tstg storage temperature 55 +150 C

Tj junction temperature 20 +150 C

Ves electrostatic handling

Human Body Model (HBM) 2000 V

Machine Model (MM) 300 V


4/16

1999 Oct 26 4



THERMAL CHARACTERISTICS

Note

1. An external heatsink is necessary.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient 56 K/W

Rth(j-fin) thermal resistance from junction to fin note 1 11 K/W

Rth(h-a) thermal resistance from heatsink to ambient 18 K/W

Thermal protection

The internal thermal protection circuit gives a decrease of

the slew rate at high temperatures: 10% decrease at130C and 30% decrease at 145C (typical values on thespot of the thermal protection circuit).

handbook, halfpage

40

Ptot

(W)

0

8

6

2

0

4

40 80 160120Tamb(C)

MBH989

(1)

(2)

Fig.3 Power derating curves.

(1) Infinite heatsink.

(2) No heatsink.

handbook, halfpage

MGK279

5 K/W

outputs

fin

thermal protection circuit

6 K/W

Fig.4 Equivalent thermal resistance network.


5/16

1999 Oct 26 5



CHARACTERISTICS

Operating range: Tj =20 to +150C; VDD = 180 to 210 V. Test conditions: Tamb = 25C; VDD = 200 V;

Vo(c1) = Vo(c2) = Vo(c3) = 12VDD; CL = 10 pF (CLconsists of parasitic and cathode capacitance); Rth(h-a) = 18 K/W(measured in test circuit of Fig.8); unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Iq quiescent supply current 5.9 6.9 7.9 mA

Vref(int) internal reference voltage(input stage)

2.5 V

Ri input resistance 3.6 k

G gain of amplifier 47.5 51.0 55.0

G gain difference 2.5 0 +2.5

VO(c) nominal output voltage atpins 7, 8 and 9 (DC value)

Ii = 0A 116 129 142 V

VO(c)(offset) differential nominal outputoffset voltage betweenpins 7 and 8, 8 and 9 and9 and 7 (DC value)

Ii = 0A 0 5 V

Vo(c)(T) output voltage temperaturedrift at pins 7, 8 and 9

10 mV/K

Vo(c)(T)(offset) differential output offsetvoltage temperature driftbetween pins 7 and 8,8 and 9 and 7 and 9

0 mV/K

Io(m)(offset) offset current of measurementoutput

Io(c) = 0A;1 . 5 V < Vi < 5.5 V;3 V < Vo(m) < 6 V

50 +50 A

Io(m)/Io(c) linearity of current transfer 100A < Io(c) < 100A;1 . 5 V < Vi < 5.5 V;3 V < Vo(m) < 6 V

0.9 1.0 1.1

at CRT discharge;Io(c) =1mA;1 . 5 V < Vi < 5.5 V;3 V < Vo(m)


6/16


7/16

1999 Oct 26 7



handbook, halfpage

0

Vo(c)

(V)

2 2.5 4 6Vi(V)

200

0

160

120129

80

40

MBH988

Fig.5 Typical DC-to-DC transfer of VI to VO(c).


8/16

1999 Oct 26 8



150140

100

6050

151

149

tst

Ov(in %)

t

t

3.08

4.04

2.12

to(r)

tPco

Vo(c)(V)

Vi(V)

MGK280

Fig.6 Output voltage (pins 7, 8 and 9) rising edge as a function of the AC input signal.


9/16

1999 Oct 26 9



51

49

Ov(in %)

t

t

MGK281

150140

100

6050

3.08

4.04

2.12

Vo(c)(V)

Vi(V)

tst

to(f)

tPco

Fig.7 Output voltage (pins 7, 8 and 9) falling edge as a function of the AC input signal.


10/16

1999 Oct 26 10



External flashover protection

For sufficient flashover protection it is necessary to applyan external diode and 100resistor for each channel.See application note Application and Product descriptionof TDA6107Q/N1(report number AN96072).

To limit the diode current an external 1 kcarbonhigh-voltage resistor in series with the external diode anda 2 kV spark gap are needed (for this resistor value, theCRT has to be connected to the main PCB).

VDDmust be decoupled to GND:

1. With a capacitor >20 nF with good HF behaviour

(e.g. foil); this capacitor must be placed as close aspossible to pins 6 and 4, but definitely within 5 mm.

2. With a capacitor >3.3F on the picture tube baseprint.

Switch-off behaviour

The switch-off behaviour of the TDA6107Q is controllable.This is due to the fact that the output pins of theTDA6107Q are still under control of the input pins for lowpower supply voltages (approximately 30 V and higher).

Bandwidth

The addition of the flash resistor produces a decreasedbandwidth and increases rise and fall times.

Dissipation

Regarding dissipation, distinction must first be madebetween static dissipation (independent of frequency) anddynamic dissipation (proportional to frequency).

The static dissipation of the TDA6107Q is due to voltagesupply currents and load currents in the feedback networkand CRT.

The static dissipation Pstatequals:

Where:

VDD = supply voltageIDD = supply current

VO(c) = DC value of cathode voltage

IO(c) = DC value of cathode current.

The dynamic dissipation Pdynequals:

Where:

CL = load capacitance

Cint = internal load capacitance (4 pF)

fi = input frequency

Vo(c)(p-p) = output voltage (peak-to-peak value)

= non-blanking duty cycle.

The IC must be mounted on the picture tube base print tominimize the load capacitance CL.

Pstat VDD IDD 3 VO(c) IO(c)+=

Pdyn 3 VDD CL Cint+( ) fi Vo(c)(p-p) =


11/16

1999 Oct 26 11



TEST AND APPLICATION INFORMATION


MGK282

2 M

C1

19

1

J1

22 F

22 nF

C2

4

probe 1

R1

100 k

R2

6.8 pFC10

20 nFC7

10 FC8

3.2 pFC9

136 pFC11

VIP

REFERENCE

Vi(1) Vof

Iom

Voc(1)

VDD

Ri

Rf

Ra

2 M

C3

2

6

82

J2

22 F

22 nF

C4

probe 2

R3

100 k

R4

6.8 pFC13

3.2 pFC12

136 pFC14

Vi(2)Vof

Iom

Voc(2)

Ri

Rf

Ra

2 M

C5

TDA6107Q

37

5

3

J3

22 F

22 nF

C6

probe 3

R5

100 k

R6

4 V

6.8 pFC16

3.2 pFC15

136 pFC17

Vi(3)Vof

Iom

Vo(m)

Voc(3)

Ri

Rf

Ra

Fig.8 Test circuit.

Current sources J1, J2 and J3 are to be tuned so that Vo(c)of pins 9, 8 and 7 is set to 100 V.


12/16

1999 Oct 26 12



INTERNAL CIRCUITRY


7, 8, 9

MGK283

esd

6.8 Vesd

esd

GND VDD

esd

frominputcircuit

frominputcircuit

fromcontrolcircuit

from blackcurrentmeasurementcircuit

fromcontrolcircuit

to black currentmeasurement circuitto black current

measurement circuit

to black currentmeasurement circuit

to black currentmeasurement circuit

esd

TDA6107Q

(1)

esd

flash

to cascodestage

1, 2, 3

4 6

5

Vbias

(1) All pins have an energy protection for positive or negative overstress situations.

Fig.9 Internal pin configuration.


13/16

1999 Oct 26 13



PACKAGE OUTLINE

UNIT A A3 b1 D1 2b2b c D(1) E(1) Z

(1)e L P P1 q1 q2q

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION

ISSUE DATEIEC JEDEC EIAJ

mm18.517.8

8.78.0

A4

15.515.1

1.401.14

0.670.50

1.401.14

0.480.38

21.821.4

21.420.7

6.486.20

3.43.2

2.54

e

2.54 1.06555

5.95.7

4.44.2

3.93.4

15.114.9

Q

1.751.55

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

2.752.50

SOT111-192-11-17

95-03-11

0 5 10 mm

scale

0.25

w

D

E

A

A

c

A2

3

A4

q 1

q 2

L

e2

Q

w M

b

b1b2

D1

P

q

1

Z e

1 9

P

seatin

g

plane

pin 1 index

o

o

DBS9MPF: plastic DIL-bent-SIL medium power package with fin; 9 leads SOT111-1

Amax. max.

2

3.7


14/16

1999 Oct 26 14



SOLDERING

Introduction to soldering through-hole mount

packages

This text gives a brief insight to wave, dip and manualsoldering. A more in-depth account of soldering ICscanbefound in our Data Handbook IC26; Integrated CircuitPackages(document order number 9398 652 90011).

Wave soldering is the preferred method for mounting ofthrough-hole mount IC packages on a printed-circuitboard.

Soldering by dipping or by solder wave

The maximum permissible temperature of the solder is260C; solder at this temperature must not be in contactwith the joints for more than 5 seconds.

Thetotal contact time of successive solderwaves must notexceed 5 seconds.

The device may be mounted up to the seating plane, butthe temperature of the plastic body must not exceed thespecified maximum storage temperature (Tstg(max)). If theprinted-circuit board has been pre-heated, forced coolingmay be necessary immediately after soldering to keep thetemperature within the permissible limit.

Manual soldering

Apply the soldering iron (24 V or less) to the lead(s) of thepackage, either below the seating plane or not more than

2 mm above it. If the temperature of the soldering iron bitis less than 300C it may remain in contact for up to10 seconds. If the bit temperature is between300 and 400C, contact may be up to 5 seconds.

Suitability of through-hole mount IC packages for dipping and wave soldering methods

Note

1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from suchimproper use or sale.

PACKAGESOLDERING METHOD

DIPPING WAVE

DBS, DIP, HDIP, SDIP, SIL suitable suitable(1)

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one ormore of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the specificationis not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.


15/16

1999 Oct 26 15



NOTES


16/16

Philips Electronics N.V. SCA

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changedwithout notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any licenseunder patent- or other industrial or intellectual property rights.

Internet:http://www.semiconductors.philips.com

1999 68

Philips Semiconductors a worldwide company

For all other countries apply to:Philips Semiconductors,International Marketing & Sales Communications, Building BE-p, P.O. Box 218,5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

Argentina:see South America

Australia:3 Figtree Drive, HOMEBUSH, NSW 2140,Tel. +61 2 9704 8141, Fax. +61 2 9704 8139

Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210Belarus:Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773

Belgium:see The Netherlands

Brazil: see South America

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,51 James Bourchier Blvd., 1407 SOFIA,Tel. +359 2 68 9211, Fax. +359 2 68 9102

Canada:PHILIPS SEMICONDUCTORS/COMPONENTS,Tel. +1 800 234 7381, Fax. +1 800 943 0087

China/Hong Kong:501 Hong Kong Industrial Technology Centre,72 Tat Chee Avenue, Kowloon Tong, HONG KONG,Tel. +852 2319 7888, Fax. +852 2319 7700

Colombia:see South America

Czech Republic:see Austria

Denmark:Sydhavnsgade 23, 1780 COPENHAGEN V,Tel. +45 33 29 3333, Fax. +45 33 29 3905

Finland:Sinikalliontie 3, FIN-02630 ESPOO,Tel. +358 9 615 800, Fax. +358 9 6158 0920

France:51 Rue Carnot, BP317, 92156 SURESNES Cedex,Tel. +33 1 4099 6161, Fax. +33 1 4099 6427

Germany:Hammerbrookstrae 69, D-20097 HAMBURG,Tel. +49 40 2353 60, Fax. +49 40 2353 6300

Hungary: see Austria

India:Philips INDIA Ltd, Band Box Building, 2nd floor,254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,Tel. +91 22 493 8541, Fax. +91 22 493 0966

Indonesia: PT Philips Development Corporation, Semiconductors Division,Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080

Ireland:Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200Israel:RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),Tel. +39 039 203 6838, Fax +39 039 203 6800

Japan:Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057

Korea:Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,Tel. +82 2 709 1412, Fax. +82 2 709 1415

Malaysia:No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,Tel. +60 3 750 5214, Fax. +60 3 757 4880

Mexico:5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087

Middle East:see Italy

Netherlands:Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,Tel. +31 40 27 82785, Fax. +31 40 27 88399

New Zealand:2 Wagener Place, C.P.O. Box 1041, AUCKLAND,Tel. +64 9 849 4160, Fax. +64 9 849 7811

Norway:Box 1, Manglerud 0612, OSLO,Tel. +47 22 74 8000, Fax. +47 22 74 8341

Pakistan:see Singapore

Philippines:Philips Semiconductors Philippines Inc.,106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,Tel. +48 22 5710 000, Fax. +48 22 5710 001

Portugal:see Spain

Romania:see Italy

Russia:Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,Tel. +7 095 755 6918, Fax. +7 095 755 6919

Singapore:Lorong 1, Toa Payoh, SINGAPORE 319762,Tel. +65 350 2538, Fax. +65 251 6500

Slovakia:see Austria

Slovenia:see ItalySouth Africa:S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,Tel. +27 11 471 5401, Fax. +27 11 471 5398

South America:Al. Vicente Pinzon, 173, 6th floor,04547-130 SO PAULO, SP, Brazil,Tel. +55 11 821 2333, Fax. +55 11 821 2382

Spain:Balmes 22, 08007 BARCELONA,Tel. +34 93 301 6312, Fax. +34 93 301 4107

Sweden:Kottbygatan 7, Akalla, S-16485 STOCKHOLM,Tel. +46 8 5985 2000, Fax. +46 8 5985 2745

Switzerland:Allmendstrasse 140, CH-8027 ZRICH,Tel.+411 488 2741Fax. +41 1 488 3263

Taiwan:Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874

Thailand:PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,Tel. +66 2 745 4090, Fax. +66 2 398 0793

Turkey:Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

United Kingdom:Philips Semiconductors Ltd., 276 Bath Road, Hayes,MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421

United States:811 East Arques Avenue, SUNNYVALE, CA 94088-3409,Tel. +1 800 234 7381, Fax. +1 800 943 0087

Uruguay:see South America

Vietnam:see Singapore

Yugoslavia:PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,Tel. +381 11 62 5344, Fax.+381 11 63 5777

Printed in The Netherlands 545004/200/04/pp16 Date of release: 1999 Oct 26 Document order number: 9397 750 06485

Documents

3 Video Ampop -Tda6107q