Main Product Characteristics

S1

Schematic Diagram

Features and Benefits

Absolute Maximum Ratings (TC=25°C unless otherwise specified)

Fast switching and reverse body recovery

Advanced MOSFET process te chnology

Ideal for high efficiency switched mode power suppliesLow on-resistance with low gate charge

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DFN3X3Asymmetric

Dual Pin

Description The GSFN9810 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications.

30V Dual N-Channel MOSFETGSFN9810

Q1 Q2

VDSS 30V 30V

RDS(ON)(Max.) 10.5mΩ 10.5mΩ

ID 19.5A 19.5A D1 D1

G2 S2

G1 D1

S2 S2

D1

S2 S2 S2 G2

S1/D2 G1 G2

D1 D2

S2

Parameter Symbol Q1 Q2 Unit

Drain-Source Voltage VDS 30 30 V

Gate-Source Voltage VGS ±20 ±20 V

Drain Current – Continuous (TC=25°C) 19.5 19.5 A

Drain Current – Continuous (TC=100°C) 12.3 12.3 A

Drain Current – Continuous (TA=25°C) 10.8 10.8 A

Drain Current – Continuous (TA=100°C) 6.8 6.8 A

Drain Current – Pulsed1 IDM 78 78 A

Single Pulse Avalanche Energy2 EAS 13 13 mJ

Single Pulse Avalanche Current2 IAS 16 16 A

Power Dissipation (TC=25°C) 27 27 W

Power Dissipation – Derate above 25°C 0.01 0.01 W/°C

Storage Temperature Range TSTG °C

Operating Junction Temperature Range TJ °C

-55 to +150

-55 to +150

ID

PD

D1 D1 D1 G1

Electrical Characteristics (TJ=25°C unless otherwise specified)

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30V Dual N-Channel MOSFETGSFN9810

Parameter Symbol Min. Typ. Max. Unit

Q1 30 --- ---

Q2 30 --- ---

Q1 --- 0.04 ---

Q2 --- 0.04 ---

Q1 --- --- 1

Q2 --- --- 1

Q1 --- --- 10

Q2 --- --- 10

Q1 --- --- ±100

Q2 --- --- ±100

Q1 --- 8.5 10.5

Q2 --- 8.5 10.5

Q1 --- 11 14

Q2 --- 11 14

Q1 1.2 1.6 2.5

Q2 1.2 1.6 2.5

Q1 --- -4 ---

Q2 --- -4 ---

Q1 --- 12 ---

Q2 --- 12 ---

V

IGSS VGS=±20V, VDS=0V

VDS=5V, ID=5A

VGS=10V, ID=10A

VGS=4.5V, ID=5A

mV/°C

Forward Transconductance gfs

△VGS(th)

S

Static Drain-Source On-Resistance3 RDS(ON) mΩ

V/°C

VGS(th) Temperature Coefficient

Gate Threshold Voltage VGS(th) V

VGS=VDS, ID =250uA

IDSS

VDS=30V, VGS=0V, TJ=25°C

VDS=24V, VGS=0V, TJ=125°C

Gate-Source Leakage Current

uA

nA

Conditions

Static State Characteristics

Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA

BVDSS Temperature Coefficient △BVDSS/ △TJ Reference to 25°C, ID=1mA

Drain-Source Leakage Current

Thermal Characteristics

Parameter Typ. Max. UnitQ1 --- 62 °C/WQ2 --- 62 °C/WQ1 --- 4.6 °C/WQ2 --- 4.6 °C/W

Thermal Resistance Junction to Ambient

Thermal Resistance Junction to Case

Symbol

RθJA

RθJC

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30V Dual N-Channel MOSFETGSFN9810

Parameter Symbol Min. Typ. Max. Unit

Q1 --- 15.6 31

Q2 --- 15.6 31

Q1 --- 2.3 5

Q2 --- 2.3 5

Q1 --- 3 6

Q2 --- 3 6

Q1 --- 3.8 7

Q2 --- 3.8 7

Q1 --- 10 19

Q2 --- 10 19

Q1 --- 22 42

Q2 --- 22 42

Q1 --- 6.6 13

Q2 --- 6.6 13

Q1 --- 620 900

Q2 --- 620 900

Q1 --- 85 125

Q2 --- 85 125

Q1 --- 60 90

Q2 --- 60 90

Q1 --- 2.8 5.6

Q2 --- 2.8 5.6

Q1 --- --- 19.5

Q2 --- --- 19.5

Q1 --- --- 39

Q2 --- --- 39

Q1 --- --- 1

Q2 --- --- 1Diode Forward Voltage3 VSD VGS=0V, IS=1A, TJ=25°C V

Drain-Source Diode Characteristics

Continuous Source Current

Pulsed Source Current3

IS

ISM

VG=VD=0V, Force Current A

VDS=25V, VGS=0V, F=1MHz pF

Gate resistance Rg VGS=0V, VDS=0V, F=1MHz Ω

Input Capacitance Ciss

Output Capacitance Coss

Reverse Transfer Capacitance Crss

Turn-Off Delay Time3, 4 Td(off)

Fall Time3, 4 Tf

VDD=15V, VGS=10V, RG=6Ω, ID=1A

nS

VDS=15V, VGS=10V, ID=5A nC

Turn-On Delay Time3, 4 Td(on)

Rise Time3, 4 Tr

Total Gate Charge3, 4 Qg

Gate-Source Charge3, 4 Qgs

Gate-Drain Charge3, 4 Qgd

Dynamic Characteristics

Conditions

Note:

1. Repetitive Rating: Pulsed width limited by maximum junction temperature.

2. VDD=25V, VGS=10V, L=0.1mH, Q1: IAS=16A, Q2: IAS=42A, RG=25, Starting TJ=25°C.3. The data tested by pulsed, pulse width ≦ 300 uS, duty cycle ≦ 2 %.

4. Essentially independent of operating temperature.

Electrical Characteristics (TJ=25°C unless otherwise specified)

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Typical Electrical and Thermal Characteristic Curves

30V Dual N-Channel MOSFETGSFN9810

TC , Case Temperature (°C) Fig.1 Q1 Continuous Drain Current vs. TC

TJ , Junction Temperature (°C) Fig.3 Q1 Normalized Vth vs. TJ

I D ,

Con

tinuo

us D

rain

Cur

rent

(A)

Nor

mal

ized

On

Res

ista

nce

(m

) TJ , Junction Temperature (°C)

Fig.2 Q1 Normalized RDS(ON) vs. TJ

Nor

mal

ized

Gat

e Th

resh

old

Vol

tage

(V)

VG

S , G

ate

to S

ourc

e V

olta

ge (V

)

Qg , Gate Charge (nC) Fig.4 Q1 Gate Char ge Waveform

Nor

mal

ized

The

rmal

Res

pons

e (R

θJC)

I D ,

Con

tinuo

us D

rain

Cur

rent

(A)

VDS , Drain to Source Voltage (V) Fig.6 Q1 Maximum Safe Operation Area

Square Wave Pulse Duration (S) Fig.5 Q1 Normalized Transient Impedance

V DG

D

D

e A

e

Re

e

e e e e

D e e e

RD ( )

e

e e

e

e

e e

e e e V

e e

e

e R

ee

R

D

D

e

A

e e e D I

D D e e

5 8

V DG

D

90

10A

DDD

EA12 L A

2 D

D DD

6 8

30V Dual N-Channel MOSFETGSFN9810

Package Outline Dimensions DFN3X3 Asymmetric Dual Pin

Symbol Dimensions In Millimeters

Min Typ Max A 0.70 0.75 0.80 A1 0.00 0.02 0.05 A3 0.20REF b 0.35 0.40 0.45 D 2.90 3.00 3.10 E 2.90 3.00 3.10

D2 2.20 2.30 2.40 E2 0.40 0.50 0.60 D3 2.20 2.30 2.40 E3 0.85 0.95 1.05 e 0.55 0.65 0.75

K1 0.15 0.25 0.35 K2 0.15 0.25 0.35 L 0.30 0.35 0.40 M 0.25 0.35 0.45 R 0.125REF

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30V Dual N-Channel MOSFETGSFN9810

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