4._11301200_Metal & Equipment for HB LED_Semicon Taiwan 2011

8/3/2019 4._11301200_Metal & Equipment for HB LED_Semicon Taiwan 2011

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Material and Equipment

Technologies for HB-LED

Manufacturing

2011 Brewer Science, Inc.

Ram K. Trichur

Director, Strategic Business Unit

SEMICON West 2011


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Slide 2Brewer Science, Inc., SEMICON Taiwan, 2011

Brewer Science Delivers Solutions

to These Markets


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Brewer Science

In 1981, invented the anti-reflective coatingsmarketplace Maintain market share dominance for BARC 30 years of innovation enabling our customers to

overcome critical industry challenges

Global supply and support network

Corporate Headquarters, Rolla, Missouri Dr. Terry Brewer, President, CEO, Founder


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Brewer ScienceSolutions for Advanced Packaging

Generic LED Fab Process Flow

Backend

ProcessesSubstrate

Growth

MOCVD

Processes

Front-End Chip

Manufacturing

Thin Wafer

Handling

TSV Creation/

Micromachining

Advanced

Interconnects

Surface

Modification

Planarization

Brewer Science offers varioustechnology solutions for advancedpackaging in LED manufacturing


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Brewer ScienceSolutions for Advanced Packaging

Thin WaferHandling

TSV Creation/

Micromachining

Advanced

Interconnects

Surface

Modification

Planarization

Temporary Bonding Materials

Benchtop Wafer Debonding Tools

Adhesion Promoters

Low-Surface-Energy Materials

Self-Leveling Planarization Materials

Contact Planarization

Acid- & Base-Resistant Materials

Scratch-Resistant Materials for DRIE

Carbon NanotubeBased Conductors


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Chemical Release

Technology

Slide Debonding

Technology

ZoneBONDTM

Technology

Brewer ScienceSolutions for Thin Wafer

HandlingHigh-Temperature-CapableTemporary Bonding Technology

Perforated Carrier

Solvent for Chemical Release

Low cost of ownershipand low initial investment Suitable for low-volumeoperations

Commercial technologyusing WaferBOND

CR-200 coating

Slide

Slide

Heat

Wafer sizes up to 300 mm

Automated and semi-automated debondingtools available


HT-10.10 coating

ZB Carrier

Release

Zone

Adhesive on Device

Stiction Zone

Alpha-stage technology

Room temperaturedebonding capability Higher throughput

capability

Compatibility - 100 mm to300 mm wafers possible


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Motivation for Temporary Bonding

Wafer-Level Electrical Redistribution An intermediate 3-D TSV interposer can be

used between the LED component and the

PCB to drive electrical current and heataway from the LED chip

Temporary bonding is widely used in thefabrication of Si-based TSV interposers

AlN

LED chip

Si submountwith Cu TSVsCu-filledTSVs

Layer Transfer or Laser Lift-Off (LLO)Process Temporary bonding demands are increasing with

need for LLO technique - creating need to handlethin wafers using temporary bonding

Carrier

Sapphire

Laser

GaNMirror

Thin Wafer

handling

Courtesy of Shinko


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Layer Transfer ProcessSapphire wafer with

active epi layer

Coat WaferBOND

material and bond totemporary carrier

Growth substrate

separation and n-side processing

Debond chip wafer

from temporary

carrier and cleanWaferBONDmaterial

Material Requirements for Layer Transfer Processes:

Stability during high-temperature processing (~ 250C)Ability to withstand acid or alkaline treatmentsStability during vacuum, CVD processesThin wafer handling capability to support epi and chip carrierSupport high shear stress during backgrinding (if not using LLO process)


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Temporary Wafer Bonding Process

Supports all thin-wafer processes:

Layer transfer processes Grinding and thinning growth

substrates (sapphire or other)

Interposer layer orthrough-viaprocessing

Brewer Science provides complete

solution:

Uses standard bonding tools Brewer Science provides bonding

materials and process support

Brewer Science suppliesdebonding equipment


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Slide 10

Chemical Resistance of

WaferBONDHT-10.10 Material

15-m film on 4-inch Si wafer hot plate baked at 100C for 2 min

followed by a hot plate bake at 160C for 2 min

*HMDS pretreatment must be used for TMAH processing stability

Chemistry BathTemperature

Time Results

Acetone 25C 25 min film unchanged

0.26N TMAH* 60C 30 min film unchanged

6N HCL 60C 30 min film unchanged

15% H2O2 60C 40 min film unchanged

30% NH4OH 25C 30 min film unchanged10% KI in H2O 25C 20 min film unchanged

EtOH 25C 5 min film unchanged

MeOH 25C 5 min film unchanged

IPA 25C 5 min film unchanged

Cyclohexanone 25C 5 min film unchanged

Ethyl Lactate 25C 5 min film unchanged

PGMEA 25C 5 min film unchanged

PGME 25C 5 min film unchanged

30% HCL 25C 90 min film unchanged

70% HNO3 25C 1 hr film unchanged

30% KOH 85C 1 hr film intact, but peeling atedges

WaferBONDHT-10.10 bonding material has been shown to be stable through a widevariety of wet chemical processes used during TSV creation

I will insert 2 images


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Slide 11

WaferBONDTechnology in TSV Application

WaferBONDHT-10.10material coated on

device wafer

Bonded tocarrier

Thinneddevice wafer

TSV creation

Debonded

TSV wafer

70-m thick wafer, 1:1

aspect ratio vias, copper

redistribution layer

Silicon interposer, RDL - Fuji

All processing, including via etching, passivation, and

metallization, is completed at wafer level


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Chemical Release

Technology

Slide Debonding

Technology

ZoneBONDTM

Technology

Brewer ScienceSolutions for Thin Wafer

HandlingHigh-Temperature-CapableTemporary Bonding Technology

Perforated Carrier

Solvent for Chemical Release

Low cost of ownershipand low initial investment

Suitable for low-volumeoperations


CR-200 coating

Slide

Slide

Heat

Wafer sizes up to 300 mm

Automated and semi-automated debondingtools available


HT-10.10 coating

ZB Carrier

Release

Zone

Adhesive on Device

Stiction Zone


Room temperaturedebonding capability Higher throughput

capability

Compatibility - 100 mm to300 mm wafers possible


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Debonding Process Chemical Release

Slide 13

Thinned device

substrate

Perforated wafer

as carrier

Features Spin-applied thermoplastic bonding material - WaferBOND CR-200

material

Debonded and released in a solvent low-stress process Compatible with most wafer sizes Low equipment cost for demounting Suitable for low-volume applications


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Debonding Process Chemical Release

Slide 14

SeparationJig

Removal Solvent Perforated Carrier

Low-stress solvent bath demounting from carrier

Separated Device Wafer


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Debonding Process - Slide Debonding

Slide

Slide

Heat

Spin rinse with

solvent & spin dry

Thinned device

substrate

Reuse carrier

Thinned device

carrier

Enabled by

WaferBOND family of temporary bonding materials Cee 1300DB thermal slide-off debonding tool

Features

Semi-automated or automated debonding process Compatible with wafer sizes up to 300 mm Suitable for R&D to high-volume applications


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Cee1300DB Slide Debonding Tool

Proven on:

Sapphire Silicon Silicon carbide GaAs, InP Multiple diameters

(3, 4, 6, 8, and 12 in)

Semiautomatic, tabletop thermal slide-off debonding tool for use

with WaferBONDtemporary bonding material.


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Room Temperature Separation ZoneBOND

System

Basic Process Flow:

1. Coat polymer adhesive on device

2. Create carrier: Release zone & stiction zone

3. Bond face to face

4. User processes: Thin, pattern, etc.

5. Remove stiction zone adhesive

6. Mount device side on film frame

7. Separate carrier from adhesive

8. Clean adhesive from device

Device

Carrier

Stiction ZoneRelease ZoneZB Carrier

Adhesive on Device

1

2

Device

Carrier

Polymer Adhesive3

4

Thin Device

7

8

5 6&



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Room Temperature Separation ZoneBOND

System

Slide 18

Features Low mechanical & thermal stress on

device wafer

Separate carrier away from adhesive,not device

Room temperature debonding Enables the use of adhesives that are

tolerant of higher temperatures

Eliminates the conflict of adhesivetemperature capability versustemperature requirements fordebonding

Designed for higher debondingthroughput

Compatible with wafer sizes 100 mm to300 mm


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Summary

Brewer Science is an established technologypartner in the microelectronics industry with

strong expertise in IC, MEMS, optoelectronics,

nanotechnology, and compound

semiconductors

We provide strong expertise in thin waferhandling and advanced packaging with material

and equipment technologies for LED

manufacturing

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4._11301200_Metal & Equipment for HB LED_Semicon Taiwan 2011