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Copyright ©2010 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
450 mm Industry Briefing
July 13, 2011SEMICON West
Copyright ©2010 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
Opening Remarks
Richard YoungVice President of Manufacturing Technology
13 July 2011 3
Momentum is Accelerating
• Participation in the 450 mm Program has doubled in last 18 months
• Clear signals are coming from IC device makers
• Equipment supply base community is signaling a willingness to engage and support transition
• Interaction between the 450 mm consortium and industry is intensifying in pace and breadth
• Site expansion at the College of Nanoscale Science and Engineering (CSNE) is in preparation
13 July 2011 4
Supply Chain Alignment
• Silicon supply in good shape
• Test Wafer infrastructure– Cleaner and greater supply from SEMATECH
• 450 mm equipment delivered and capability expanding – New capability coming to CNSE/SEMATECH– New capabilities also expected at supplier sites – Collaborative cost sharing procurement model in pilot– Required capabilities in development now – most from
multiple providers
13 July 2011 5
Consortium Approach
• Key lessons learned from I300I comprehended– Learning is helping to accelerate timeline
• Collaboration will continue to be critical for a cost- effective and timely 450 mm transition
The consortium test bed helps enable a 60% reduction in time to standards versus 300 mm
13 July 2011 6
Consortium Roles Next Steps
• Consortia have been effective by creating a platform for consensus building to leverage experience and expertise of a larger community – 450 mm is an industry-wide transition for which we need all the best ideas
in play• Equipment development and demonstration testing: use lessons learned from
previous transitions and emphasize a balanced set of objectives – Involve supplier community through supplier training– Continuously refine performance metrics factoring emphasis on cost,
productivity, or process capability • Align the technology roadmap: collaboratively work with consortium members
on aligning the technology roadmap requirements for 450 mm introduction.• Publish performance objectives, schedules, and roadmaps providing the
semiconductor original equipment manufacturers (OEMs) the necessary input for collaboration
• Set aggressive but achievable resource conservation targets• SEMATECH will use its cost models with consortium members to evaluate,
validate, and align cost efficiency expectations for the 450 mm transition
Copyright ©2010 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
Briefing Agenda
Tom Jefferson450 mm Program Manager
13 July 2011 8
July 2011 450 mm Briefing Agenda
• 2011 450 mm Program Overview
• 450 mm Process and Metrology Readiness– Silicon and Starting Materials– Test Wafer Operations– Equipment Development– Demonstration Test Methodology
• Summary and Key Messages
• Question and Discussion Session
13 July 2011 999
450 mm Consortium Mission StatementEnable a cost-effective 450 mm transition through coordination and
development of infrastructure, guidance, and industry readiness
450 mm Program Mission and Organization
MaterialsEquipment
Guidelines Testing
450 mm Program Scope
13 July 2011 10
450 mm Timeline - 2006–present
2006 2007 2008 2009 2010
450 mm Program launched
450 mm lot size (25)/carrier (FOUP)
defined
Wafer thickness defined (925 µm)
1st sc-Si wafers
1st sintered wafers
1st metrology tool
1st process tool
450 mm EPMs
2011
450 mm standards: loadport/FOUP/ wafers
NY funds 450 mm Program
1st wafers processed at supplier sites
13 July 2011 11
450 mm Progress - 2010–>2011
Jul-2010 Jul-2011Wafers ~440 wafers loaned to 25
suppliers•~750 wafers loaned to >40 suppliers
Equipment •3 450 mm tools operational or on order for consortium cleanroom•450 mm development underway for
13 July 2011 1212
450 mm Momentum is Accelerating
Record capex leads to 28% fab equipment growth in 2011, says SEMI
March 3, 2011: “…For the first time, SEMI's World Fab Forecast data identify seven facilities in the near future that are candidates for 450 mm readiness …”
Splinter Seeks Consensus on 450-mm TransitionMay 24, 2011: “…Applied will step up its 450-mm-related equipment development … will have its 450-mm tools ready ‘when the customers need them’…”
TSMC KICKS OFF 450 mm WAFER FAB PLANFebruary 11, 2011: “…to invest in 450 mm wafer fab, slated to come on line in 2015 after entering into pilot run in 2013 …”
13 July 2011 13
05
1015202530354045
Dec'09 Jul'10 Dec.10 Jul'11
# CompaniesEngaged with450mm Program
Engaged: Providing equipment, materials, or services to the 450 mm Program
450 mm Momentum is Accelerating
13 July 2011 1414
Recent 450 mm Progress
Q2’11
FOUPs/MACs
450 mm Stocker
13 July 2011 151515
450 mm Program Strategy and Projected Scope
~30 tools for test wafer generation
15–20 test wafer tools mature enough to be demo tools
~80 additional
demo tools
supportsSilicon and Test Wafer Generation
1IDM Equipment Selections for 450 mm Pilot
Lines
4
Equipment Demonstration
2Equipment
Development+ =
3
450 mm Consortium Scope
13 July 2011 16
Expanded Cleanroom Capacity at CNSE
Copyright ©2010 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
Silicon and Starting Materials
Mike Goldstein (Intel)
13 July 2011 18
450 mm Silicon Supply Update
• Silicon suppliers have installed 450 mm dedicated equipment and are manufacturing developmental test wafers in large volume, improving the wafer quality.
• Hundreds of wafers have been shipped successfully in multi application carriers (MACs).
• Cleaning methodology has been improved. Current 90 nm particle levels are below 200 per wafer. Further improvement is expected after tools enabling detection
13 July 2011 19
Wafer Geometry - Kuroda Precision Industries
SORI 12.1um GBIR 0.686um
ERO - Start -0.108m
Cross PV 0.540um
13 July 2011 20
Wafer Geometry- Kobelco
13 July 2011 21
Improved Mechanical Test Wafers
• NMM has developed an improved mechanical test wafer with a sag similar to single crystal wafers.
21
240°ring support
120°
5Φ450/Φ440
Shape of supporter
Gravitational sag measurement system
13 July 2011 22
450 mm Wafer Bank
• The 450 mm consortium offers wafer loans to suppliers for development of 450 mm equipment and components.
• Initiated in Q1’08, the Wafer Bank has provided a total of 720 wafers to over 40 different organizations.
• The Wafer Bank is currently transitioning from bare wafer loans to processed wafers in support of tool development.
22
13 July 2011 2313 July 2011 23
Quartz Crucibles• Single crystal silicon ingots are pulled out of molten silicon in a quartz
crucible.
• 450 mm crystal growing brings new challenges in size and robustnessfor crucible manufacturers. For the same crystal length as a 300 mm ingot:
– The polysilicon charge required to grow the ingot is ~2.4x larger.– The crystal pull time is almost double.
• Several companies are manufacturing quartz crucibles. I would like to recognize the help of Japan Super Quartz and Heraeus Quarzglas who were supportive of the program from the beginning.
23
13 July 2011 2413 July 2011 24
Quartz Parts • Quartz parts are an essential component of the IC manufacturing cycle.
• There are two aspects in quartz manufacturing:– Raw materials – tubes, rods, clear and opaque solid materials produced from high purity natural
or synthetic quartz– Components fabrication, hot and cold – diffusion tubes and boats, domes, rings, windows…
Components are fabricated according to OEMs’ designs, using lathes, machine center special fixtures, annealing furnaces, and cleaning baths.
• We would like to recognize the support of two companies in the development: Tosoh Quartz and Heraeus Quarzglas:
– Tosoh Quartz has supplied quartzware to the semiconductor industry since the 2” wafer generation and is working with OEMs on 450 mm designs and prototypes. Equipment and facilities are ready to support 450 mm wafers manufacturing and cleaning for install (CFI).
– Heraeus Quarzglas is the largest vertically integrated quartz glass producer in the world for natural and synthetic quartz glass. Currently Heraeus is preparing for 450 mm wafer generation both with raw materials and fabricated parts.
24
13 July 2011 2525
Quartzware Scaling
200 mm 200 mm 300 mm 450 mm300 mm 450 mm
13 July 2011 26
Summary
• We are engaged with materials suppliers to support 450 mm development needs.
• The silicon supply line is in good shape.
• Consortium ongoing activities include– Materials to enable process test wafer generation activities– Continued silicon suppliers benchmarking – Supporting suppliers’ quality continuous improvement programs – Working with the SEMI silicon wafer committee to generate
a 450 mm prime wafer spec
26
Copyright ©2010 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
Test Wafer Operations
Sang-dong Kwon (Samsung)
13 July 2011 28
• Current Consortium Cleanroom Operations• Wafer Quality Improvements• Infrastructure Plans• Summary
Overview
13 July 2011 29
Consortium 450 mm Operations
Wafer Sorter
SC1/SC2 cleaning at high particle removal
efficiencies
Enables cleaner silicon shipping
Automated, clean, safe wafer handling and notch
alignment
FOUP WasherWet Clean Tool
13 July 2011 30
Consortium 450 mm Metrology
Enables defect measurements down to 90 nm
Enables thickness measurements for dielectric materials
Defect/Edge Inspection Thin Film Thickness
13 July 2011 31
450 mm Wafer Quality is Improving
2010: >3000 defects/wafer 2011:
13 July 2011 32
450 mm Stocker• Scheduled for installation in consortium
cleanroom in August– Enables tracking of stored in-process WIP
and empty carriers
450 mm PGV Improvements• Ultra-narrow person-guided vehicles
(PGVs) developed and in use in consortium cleanroom– Critical for safe 450 mm operations– Reduces the required loading space– Dual-side operations compatible with
SEMI-compliant FOUPs and MACs
Improved Consortium 450 mm Infrastructure
13 July 2011 33
Summary
• Increased consortium cleanroom operations have resulted in cleaner wafers and better wafer shipping.
• The 450 mm Program is supporting multiple centralized metrology operations.
• Factory infrastructure components to enable safe and secure 450 mm operations are being implemented now.
• Requests for wafer loans are rapidly increasing.
Copyright ©2010 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
450 mm Equipment Development
Tom Abell (Intel)
13 July 2011 35
Test Wafer Infrastructure
• New capabilities coming to CNSE cleanroom.• New cost-sharing procurements have been made
in three significant areas.• Collaborative experiments are expanding with
multiple suppliers for tool development and test wafer processing.
• Requests for Information across the tool set are being sent to understand test wafer and demonstration tool plans.
• Patterning strategy has been defined for early test wafer generation and demonstration paths.
13 July 2011 36
New Capability Coming to CNSE
• 450 mm-capable manual 4-point probe from CDE tested on metal-deposited 450 mm wafers– Shipment expected within weeks
13 July 2011 37
New Cost-Sharing Equipment Coming to CNSE
• LPCVD equipment for poly/nitride deposition from EugeneTech has been selected for cost sharing– Tool under construction for end-of-year qualification
• Advanced defect detection metrology from Hitachi Hi- Tech has been selected for cost sharing– Tool will be capable of
13 July 2011 38
Collaborative Experiments
• Work is continuing with tool types external to the consortium– TOX, wet cleans, wet oxide etch, defect inspection, VPD metals
measurement, ellipsometry, PECVD oxide
• Experiments are underway and results from new tool types being received– Plasma oxide etch, metal deposition, nanoimprint
• New test wafer capabilities have been identified for experiments– Implant for resist damage, post-ash wet clean, wet poly etch
• New capabilities are being actively investigated
13 July 2011 39
Recent Test Wafer Results
notch
SiO2 rate
Plasma etch of blanket PECVD Oxide
Thermal oxide growth
Average: 457.8 nmUniformity: 21.0nm(3), ±3.3%
notch
SiO2 thickness(nm)
2nd run of PECVD OxideOxford Instruments
Wet oxide etch
Artifact from previous film
13 July 2011 40
450 mm Test Wafer Generation - Proof of Concept and Capabilities Sought
Capabilities Tested and Proven:>90 nm defect detection – at CNSESC1/SC2 wet cleans – at CNSEAdvanced particle wet clean – at supplierAdvanced wet oxide etch – at supplierManual ellipsometer – at ISMI and at supplierManual 4-point probe metrology – to ship to CNSEThermal oxide – at supplierPECVD oxide – at supplierOxide etch – at supplierVPD metals measurement – at labAdvanced defect detection – at supplierTi metallization – at supplierCoater – at supplierNIL – at supplierDielectric dry etch – at supplier
Capabilities ready to be tested:Implant for photoresist damage – at supplierPost-ash wet clean – at supplier
Capabilities to be Built and Shipped to Consortium:60% capabilities shown, ready to test or being built
13 July 2011 41
Cost-Sharing Overview
• The consortium recognizes that the historical financial risk model for funding a wafer size transition is no longer relevant
• Risk sharing with tool suppliers is expected to realize the 450 mm transition– Cost sharing is the planned mechanism to lower the financial risk– Realistic cost for building tools is expected
• Request for Information (RFI) is the first step towards cost sharing– Initial discussion format to cover entire development scope through
demonstration tools – Preparation for cost-sharing selection process
13 July 2011 42
RFI Progress• 13 RFIs sent to suppliers to cover 15 capabilities:
– TOX, PVD Ti/TiN, wet particle cleans, wet oxide etch, wet post-ash clean, dielectric etch, ash, dielectric CMP, track, CD SEM, nanoimprint, automated dielectric film metrology, HE implant, MC implant, HC implant
• 5 RFI’s in review to be sent soon:– Solvent cleans, backside cleans, TXRF, Cu barrier/seed, Cu plating
• 10 RFI’s planned for the near future:– Standard lithography, defect review SEM, metal film thickness (pump-
probe), coater for nanoimprint, optical CD, implant metrology, automated 4- point probe, stress/bow, metals CMP, PVD Ni, W dep
Sample of returned timelines for test wafer and demonstration toolsCapability Now Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4
Wet CleansThermal Oxide
PVDAshCMP
ETCHCD SEM
NanoimprintDiel. Flm Thk.
Test Wafer Tool Demostration Tool
Availability --> 2011 2012 2013
13 July 2011 43
Consortium Patterning Strategy
• Nanoimprint technology (NIL) for test wafer generation with demonstration roadmaps–
13 July 2011 44
EVG Step and Repeat Imprint Approach
450 mm S&R Imprint Flow
EVG 770 Gen II NIL Stepper
Step and RepeatUV NIL (hard and soft stamps)
EVG101
Resist ProcessingCoatResist Stripping
Imprint die x on wafer
Cure imprint polymer and de- emboss template
Move to next die and
imprint again
13 July 2011 45
EVG770 Gen II NIL Stepper 450 mm Wafer Processing
450 mm wafer loaded on the EVG770 wafer stage.
Imprint die x on wafer
Cure imprint polymer and de- emboss template
Move to next die and imprint
again
13 July 2011 46
World‘s First 450 mm Step and Repeat Imprinted Wafer with 35 nm Features
450 mm wafer with 12 imprinted die next to a 300 mm ruler. The replicated structures are 35 nm half-pitch line and space structures 50 nm deep using EVG’s proprietary high resolution hybrid stamp
technology.
High resolution replica of the circular hybrid stamp. The 4 boxes contain the 35 nm high
resolution features
Close up of a 35 nm line and space box with 10x magnification
13 July 2011 47
Metrology of Imprinted Features
Copyright ©2010 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
450 mm Demonstration Test Methodology
Yi-Lang Wu (tsmc)
13 July 2011 49
Purpose and Benefits of the 450 mm DTM
• Purpose– Enables data-based device maker equipment selection for
450 mm pilot lines
• Benefits– Clear and consistent procedures
• testing methodology• data collection tools• reporting
– Tests items scaled up for wafer size transition with focus on the functionality required for demonstration
– Test methodology for supplier self-assessment before an EMA
13 July 2011 50
A.24. Manf. Goals
A.22. FIMA
EMA Appendix 1 Characteristic
Checklists
A.1 Design SpecPassive Data Coll.
Mech. Dry Cycle
Gauges Studies
Test Planning
Marathon Tests
Sensitivity (DOE)
Demonstration Test Method (DTM)
Equipment Maturity Assessment (EMA)
Baseline Characterization
Demonstration Testing
1 2 3
DTM Scope
Results of an EMA will define the appropriate level of testing
13 July 2011 51
ReportedResults
DTM
ReportsResultsChecklists
Checklists
Checklists
Data Collection
Assessments
Tests
Evaluations
Foundations
Foun
dation
s
DTM/EMA
Feedback
What’s Important
User, Working, &Advisory Groups
Supplier Input
Known orExisting Data
DTM – Demonstration Test Method
1. Performance2. Standards3. Guidelines
Expected Results
Planning
Method/Approach
Equipment Demonstration - Process Overview
13 July 2011 52
450 mm DTM Supplier Training• Oct 17, 2011– EMA/DTM training for suppliers at ISMI
Manufacturing Week, Austin, TX
• Dec (date TBD) – EMA/DTM training for industry and suppliers at SEMICON Japan, Makuhari Messe
• Supplier participants will learn the demonstration testing process in detail through interactive training:
– Supplier responsibilities– Consortium responsibilities– Test goals and procedures– Test reports and documentation
Copyright ©2010 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
Closing Remarks and Key Messages
13 July 2011 54
The Case for Collaboration
Success of the 450 mm transition depends on comprehensive industry-wide collaboration
Consortia and related groups have historically been effectiveCollaboration
- Is a cost-effective approach for pre-competitive development- Leverages the expertise and experience of the larger community
- Aligns participants on common goals and timelines
Governments Suppliers
IC Makers Universities
13 July 2011 55
Materials and Contact Information
• Materials from today’s meeting can be found at the following URL: http://ismi.sematech.org/meetings/archives/450 mm
– Document should be posted by end of July 13.
• To obtain further information or to engage in opportunities with the 450 mm Program:
Tom Jefferson450 mm Program [email protected]
13 July 2011 5656
Key Messages
• 450 mm Readiness is increasing in all areas of the supply chain and progress is accelerating rapidly
• Solutions for many of the capabilities required to enable the transition are now in development – most from multiple providers
• Collaboration will continue to be critical for a cost effective and timely 450 mm transition
13 July 2011 57
450 mm Forecast is Positive
Key Messages, cont.
13 July 2011 5858
Closing Thoughts
“Don’t be encumbered by history. Go off and do something wonderful.”
- Robert Noyce
“Coming together is a beginning; keeping together is progress; working together is success.”
- Henry Ford
19 July 2011 59
13 July 2011 60
Questions and Discussion
450 mm Industry BriefingOpening RemarksMomentum is AcceleratingSupply Chain AlignmentConsortium ApproachConsortium Roles�Next Steps Briefing Agenda�July 2011 450 mm Briefing AgendaSlide Number 9450 mm Timeline - 2006–present450 mm Progress - 2010–>2011450 mm Momentum is AcceleratingSlide Number 13Recent 450 mm Progress450 mm Program Strategy and Projected ScopeExpanded Cleanroom Capacity at CNSESilicon and Starting Materials450 mm Silicon Supply UpdateWafer Geometry �- Kuroda Precision IndustriesSlide Number 20Improved Mechanical Test Wafers450 mm Wafer BankQuartz CruciblesQuartz Parts Slide Number 25SummaryTest Wafer OperationsSlide Number 28Slide Number 29Consortium 450 mm Metrology450 mm Wafer Quality is ImprovingSlide Number 32Summary450 mm Equipment DevelopmentTest Wafer InfrastructureNew Capability Coming to CNSENew Cost-Sharing Equipment Coming to CNSECollaborative ExperimentsRecent Test Wafer Results450 mm Test Wafer Generation�- Proof of Concept and Capabilities SoughtCost-Sharing OverviewRFI ProgressConsortium Patterning StrategyEVG Step and Repeat Imprint ApproachEVG770 Gen II NIL Stepper 450 mm Wafer ProcessingWorld‘s First 450 mm Step and Repeat Imprinted Wafer with 35 nm FeaturesMetrology of Imprinted Features450 mm Demonstration Test MethodologyPurpose and Benefits of the �450 mm DTMDTM ScopeSlide Number 51450 mm DTM Supplier TrainingClosing Remarks and Key MessagesThe Case for CollaborationMaterials and Contact InformationKey MessagesSlide Number 57Closing ThoughtsSlide Number 59Questions and Discussion